KR102109904B1 - 트리알킬갈륨 화합물의 제조 방법 - Google Patents

트리알킬갈륨 화합물의 제조 방법 Download PDF

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KR102109904B1
KR102109904B1 KR1020147011622A KR20147011622A KR102109904B1 KR 102109904 B1 KR102109904 B1 KR 102109904B1 KR 1020147011622 A KR1020147011622 A KR 1020147011622A KR 20147011622 A KR20147011622 A KR 20147011622A KR 102109904 B1 KR102109904 B1 KR 102109904B1
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South Korea
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compound
gacl
reaction mixture
trialkylgallium
temperature
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Korean (ko)
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KR20140099862A (ko
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랄프 카르흐
안드레아 리바스-나스
애니카 프레이
토비아스 버커트
에일린 뵈르너
안젤리노 도피유
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우미코레 아게 운트 코 카게
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Priority claimed from DE201210013941 external-priority patent/DE102012013941A1/de
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Publication of KR20140099862A publication Critical patent/KR20140099862A/ko
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/582—Recycling of unreacted starting or intermediate materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
KR1020147011622A 2011-11-28 2012-11-28 트리알킬갈륨 화합물의 제조 방법 Expired - Fee Related KR102109904B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102011119487 2011-11-28
DE102011119487.1 2011-11-28
DE102012013941.1 2012-07-16
DE201210013941 DE102012013941A1 (de) 2012-07-16 2012-07-16 Verfahren zur Herstellung von Galliumtrialkylverbindungen
PCT/EP2012/073772 WO2013083450A1 (en) 2011-11-28 2012-11-28 Process for preparing trialkylgallium compounds

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207012873A Division KR102231740B1 (ko) 2011-11-28 2012-11-28 트리알킬갈륨 화합물의 제조 방법

Publications (2)

Publication Number Publication Date
KR20140099862A KR20140099862A (ko) 2014-08-13
KR102109904B1 true KR102109904B1 (ko) 2020-05-12

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KR1020147011622A Expired - Fee Related KR102109904B1 (ko) 2011-11-28 2012-11-28 트리알킬갈륨 화합물의 제조 방법
KR1020147011627A Expired - Fee Related KR102071084B1 (ko) 2011-11-28 2012-11-28 Ｉｉｉａ족 금속의 트리알킬 화합물의 제조 방법
KR1020207012873A Active KR102231740B1 (ko) 2011-11-28 2012-11-28 트리알킬갈륨 화합물의 제조 방법

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KR1020147011627A Expired - Fee Related KR102071084B1 (ko) 2011-11-28 2012-11-28 Ｉｉｉａ족 금속의 트리알킬 화합물의 제조 방법
KR1020207012873A Active KR102231740B1 (ko) 2011-11-28 2012-11-28 트리알킬갈륨 화합물의 제조 방법

Country Status (9)

Country Link
US (2) US9695201B2 (enExample)
EP (2) EP2785725B1 (enExample)
JP (6) JP6165159B2 (enExample)
KR (3) KR102109904B1 (enExample)
CN (5) CN103958529A (enExample)
IN (1) IN2014CN02940A (enExample)
RU (2) RU2014126212A (enExample)
TW (2) TWI632151B (enExample)
WO (2) WO2013083449A1 (enExample)

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TWI632151B (zh) * 2011-11-28 2018-08-11 烏明克股份有限兩合公司 第iiia族金屬的三烷基化合物之製法
US8513447B1 (en) * 2012-02-01 2013-08-20 Chemtura Corporation Preparation of tri-alkyl gallium or tri-alkyl indium compounds
RU2016110114A (ru) 2013-08-22 2018-11-23 Умикоре Аг Унд Ко. Кг Способ получения алкилиндиевых соединений и их применение
CN105473599B (zh) * 2013-08-22 2018-08-28 优美科股份公司及两合公司 用于生产烷基铟化合物的方法及其用途
JP6413801B2 (ja) * 2014-02-07 2018-10-31 宇部興産株式会社 トリアルキルガリウムの製造方法
RU2016140388A (ru) 2014-03-14 2018-04-17 Умикоре Аг Унд Ко. Кг Способ получения триалкилгаллиевых соединений и их применение
EP3409676B1 (de) * 2017-05-29 2020-10-14 Umicore Ag & Co. Kg Herstellung von trialkylindiumverbindungen in gegenwart von carboxylaten
WO2019086336A1 (en) * 2017-10-31 2019-05-09 Akzo Nobel Chemicals International B.V. Method for storing and/or transporting gallium chloride
WO2019115377A1 (en) 2017-12-13 2019-06-20 Akzo Nobel Chemicals International B.V. Process for purification of dimethyl aluminium chloride

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2002533348A (ja) * 1998-12-19 2002-10-08 エピケム リミテッド 有機金属化合物の製造のための改良された方法および装置

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US5043462A (en) * 1989-04-28 1991-08-27 Messer Greisheim Process for the production of gallium-alkyl compounds
DE4005726A1 (de) * 1989-04-28 1990-10-31 Messer Griesheim Gmbh Verfahren zur herstellung von galliumalkylverbindungen
US5473090A (en) 1992-07-02 1995-12-05 Air Products And Chemicals, Inc. Process for the preparation of trialkyl compounds of group 3a metals
US5350869A (en) 1993-07-27 1994-09-27 Cvd, Incorporated Purification of trialkylgallium, synthesis of trialkylgallium
US5756786A (en) 1997-06-25 1998-05-26 Morton International, Inc. High purity trimethylindium, method of synthesis
JP2000005503A (ja) 1998-06-24 2000-01-11 Nippon Shokubai Co Ltd 反応蒸留装置および反応蒸留方法
GB0017968D0 (en) 2000-07-22 2000-09-13 Epichem Ltd An improved process and apparatus for the isolation of pure,or substantially pure,organometallic compounds
KR100852361B1 (ko) * 2001-04-06 2008-08-14 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 트리알킬 ｖａ족 금속 화합물
US6770769B2 (en) 2002-04-06 2004-08-03 Shipley Company, L.L.C. Trialkylindium preparation
JP4054997B2 (ja) 2003-06-19 2008-03-05 信越化学工業株式会社 高純度アルキルガリウムの製造方法
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Publication number Publication date
KR20140099862A (ko) 2014-08-13
WO2013083449A1 (en) 2013-06-13
JP2017132788A (ja) 2017-08-03
US20140287141A1 (en) 2014-09-25
KR20140099863A (ko) 2014-08-13
CN108341834A (zh) 2018-07-31
JP6983851B2 (ja) 2021-12-17
EP2785724A1 (en) 2014-10-08
CN107021973A (zh) 2017-08-08
CN108341834B (zh) 2021-05-25
RU2014126213A (ru) 2016-01-27
JP6644726B2 (ja) 2020-02-12
JP2020019825A (ja) 2020-02-06
TW201720834A (zh) 2017-06-16
US20140256974A1 (en) 2014-09-11
RU2014126212A (ru) 2016-01-27
JP6165160B2 (ja) 2017-07-19
JP6679527B2 (ja) 2020-04-15
KR102231740B1 (ko) 2021-03-23
JP6165159B2 (ja) 2017-07-19
TWI632151B (zh) 2018-08-11
KR20200053625A (ko) 2020-05-18
US9695201B2 (en) 2017-07-04
EP2785725A1 (en) 2014-10-08
IN2014CN02940A (enExample) 2015-07-03
WO2013083450A1 (en) 2013-06-13
US9108985B2 (en) 2015-08-18
JP2014534256A (ja) 2014-12-18
KR102071084B1 (ko) 2020-01-29
JP2015504439A (ja) 2015-02-12
CN109456345A (zh) 2019-03-12
CN103958529A (zh) 2014-07-30
CN103958528A (zh) 2014-07-30
TWI632149B (zh) 2018-08-11
JP2017105848A (ja) 2017-06-15
EP2785725B1 (en) 2017-10-11
EP2785724B1 (en) 2016-09-14
JP2021169529A (ja) 2021-10-28
TW201329091A (zh) 2013-07-16

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