TWI632151B - 第iiia族金屬的三烷基化合物之製法 - Google Patents

第iiia族金屬的三烷基化合物之製法 Download PDF

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Publication number
TWI632151B
TWI632151B TW106104275A TW106104275A TWI632151B TW I632151 B TWI632151 B TW I632151B TW 106104275 A TW106104275 A TW 106104275A TW 106104275 A TW106104275 A TW 106104275A TW I632151 B TWI632151 B TW I632151B
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TW
Taiwan
Prior art keywords
metal
reaction mixture
separator
patent application
item
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TW106104275A
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English (en)
Chinese (zh)
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TW201720834A (zh
Inventor
羅夫 卡期
安德烈斯 瑞法斯納斯
安尼卡 佛瑞
托比斯 伯克特
伊琳 沃納
安吉利諾 多普
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烏明克股份有限兩合公司
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Priority claimed from DE201210013941 external-priority patent/DE102012013941A1/de
Application filed by 烏明克股份有限兩合公司 filed Critical 烏明克股份有限兩合公司
Publication of TW201720834A publication Critical patent/TW201720834A/zh
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/582—Recycling of unreacted starting or intermediate materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
TW106104275A 2011-11-28 2012-11-27 第iiia族金屬的三烷基化合物之製法 TWI632151B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102011119487 2011-11-28
??102011119487.1 2011-11-28
DE201210013941 DE102012013941A1 (de) 2012-07-16 2012-07-16 Verfahren zur Herstellung von Galliumtrialkylverbindungen
??102012013941.1 2012-07-16

Publications (2)

Publication Number Publication Date
TW201720834A TW201720834A (zh) 2017-06-16
TWI632151B true TWI632151B (zh) 2018-08-11

Family

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TW106104275A TWI632151B (zh) 2011-11-28 2012-11-27 第iiia族金屬的三烷基化合物之製法
TW101144306A TWI632149B (zh) 2011-11-28 2012-11-27 第iii a族金屬的三烷基化合物之製法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW101144306A TWI632149B (zh) 2011-11-28 2012-11-27 第iii a族金屬的三烷基化合物之製法

Country Status (9)

Country Link
US (2) US9695201B2 (enExample)
EP (2) EP2785725B1 (enExample)
JP (6) JP6165159B2 (enExample)
KR (3) KR102109904B1 (enExample)
CN (5) CN103958529A (enExample)
IN (1) IN2014CN02940A (enExample)
RU (2) RU2014126212A (enExample)
TW (2) TWI632151B (enExample)
WO (2) WO2013083449A1 (enExample)

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TWI632151B (zh) * 2011-11-28 2018-08-11 烏明克股份有限兩合公司 第iiia族金屬的三烷基化合物之製法
US8513447B1 (en) * 2012-02-01 2013-08-20 Chemtura Corporation Preparation of tri-alkyl gallium or tri-alkyl indium compounds
RU2016110114A (ru) 2013-08-22 2018-11-23 Умикоре Аг Унд Ко. Кг Способ получения алкилиндиевых соединений и их применение
CN105473599B (zh) * 2013-08-22 2018-08-28 优美科股份公司及两合公司 用于生产烷基铟化合物的方法及其用途
JP6413801B2 (ja) * 2014-02-07 2018-10-31 宇部興産株式会社 トリアルキルガリウムの製造方法
RU2016140388A (ru) 2014-03-14 2018-04-17 Умикоре Аг Унд Ко. Кг Способ получения триалкилгаллиевых соединений и их применение
EP3409676B1 (de) * 2017-05-29 2020-10-14 Umicore Ag & Co. Kg Herstellung von trialkylindiumverbindungen in gegenwart von carboxylaten
WO2019086336A1 (en) * 2017-10-31 2019-05-09 Akzo Nobel Chemicals International B.V. Method for storing and/or transporting gallium chloride
WO2019115377A1 (en) 2017-12-13 2019-06-20 Akzo Nobel Chemicals International B.V. Process for purification of dimethyl aluminium chloride

Citations (1)

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US5043462A (en) * 1989-04-28 1991-08-27 Messer Greisheim Process for the production of gallium-alkyl compounds

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DE4005726A1 (de) * 1989-04-28 1990-10-31 Messer Griesheim Gmbh Verfahren zur herstellung von galliumalkylverbindungen
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Non-Patent Citations (1)

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Starowieyski, KB ET AL., " Synthesis and purification of trimethylgallium for MOCVD: molecular structure of (KF)(4)center dot 4(Me3Ga)", APPLIED ORGANOMETALLIC CHEMISTRY,卷: 14 ,期: 10, 頁碼: 616-622,出版日期: OCT 2000 *

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Publication number Publication date
KR20140099862A (ko) 2014-08-13
WO2013083449A1 (en) 2013-06-13
JP2017132788A (ja) 2017-08-03
US20140287141A1 (en) 2014-09-25
KR20140099863A (ko) 2014-08-13
CN108341834A (zh) 2018-07-31
JP6983851B2 (ja) 2021-12-17
EP2785724A1 (en) 2014-10-08
CN107021973A (zh) 2017-08-08
CN108341834B (zh) 2021-05-25
RU2014126213A (ru) 2016-01-27
JP6644726B2 (ja) 2020-02-12
JP2020019825A (ja) 2020-02-06
KR102109904B1 (ko) 2020-05-12
TW201720834A (zh) 2017-06-16
US20140256974A1 (en) 2014-09-11
RU2014126212A (ru) 2016-01-27
JP6165160B2 (ja) 2017-07-19
JP6679527B2 (ja) 2020-04-15
KR102231740B1 (ko) 2021-03-23
JP6165159B2 (ja) 2017-07-19
KR20200053625A (ko) 2020-05-18
US9695201B2 (en) 2017-07-04
EP2785725A1 (en) 2014-10-08
IN2014CN02940A (enExample) 2015-07-03
WO2013083450A1 (en) 2013-06-13
US9108985B2 (en) 2015-08-18
JP2014534256A (ja) 2014-12-18
KR102071084B1 (ko) 2020-01-29
JP2015504439A (ja) 2015-02-12
CN109456345A (zh) 2019-03-12
CN103958529A (zh) 2014-07-30
CN103958528A (zh) 2014-07-30
TWI632149B (zh) 2018-08-11
JP2017105848A (ja) 2017-06-15
EP2785725B1 (en) 2017-10-11
EP2785724B1 (en) 2016-09-14
JP2021169529A (ja) 2021-10-28
TW201329091A (zh) 2013-07-16

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