KR102103356B1 - 기판 세정 장치 - Google Patents
기판 세정 장치 Download PDFInfo
- Publication number
- KR102103356B1 KR102103356B1 KR1020130157711A KR20130157711A KR102103356B1 KR 102103356 B1 KR102103356 B1 KR 102103356B1 KR 1020130157711 A KR1020130157711 A KR 1020130157711A KR 20130157711 A KR20130157711 A KR 20130157711A KR 102103356 B1 KR102103356 B1 KR 102103356B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- fluid
- fluid nozzle
- cleaning
- holding mechanism
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 245
- 238000004140 cleaning Methods 0.000 title claims abstract description 117
- 239000012530 fluid Substances 0.000 claims abstract description 179
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims description 19
- 239000007924 injection Substances 0.000 claims description 19
- 238000011144 upstream manufacturing Methods 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 3
- 230000002265 prevention Effects 0.000 claims description 3
- 238000005507 spraying Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 19
- 238000005498 polishing Methods 0.000 description 17
- 239000003595 mist Substances 0.000 description 15
- 238000001035 drying Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 238000011086 high cleaning Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005661 hydrophobic surface Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- IERHLVCPSMICTF-XVFCMESISA-N CMP group Chemical group P(=O)(O)(O)OC[C@@H]1[C@H]([C@H]([C@@H](O1)N1C(=O)N=C(N)C=C1)O)O IERHLVCPSMICTF-XVFCMESISA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000013317 conjugated microporous polymer Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 210000003643 myeloid progenitor cell Anatomy 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2012-287122 | 2012-12-28 | ||
| JP2012287122A JP6093569B2 (ja) | 2012-12-28 | 2012-12-28 | 基板洗浄装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140086840A KR20140086840A (ko) | 2014-07-08 |
| KR102103356B1 true KR102103356B1 (ko) | 2020-04-22 |
Family
ID=51015751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020130157711A Active KR102103356B1 (ko) | 2012-12-28 | 2013-12-18 | 기판 세정 장치 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10737301B2 (enExample) |
| JP (1) | JP6093569B2 (enExample) |
| KR (1) | KR102103356B1 (enExample) |
| TW (1) | TWI586488B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6600470B2 (ja) | 2014-04-01 | 2019-10-30 | 株式会社荏原製作所 | 洗浄装置及び洗浄方法 |
| CN104971916B (zh) * | 2014-04-01 | 2020-07-07 | 株式会社荏原制作所 | 清洗装置及清洗方法 |
| KR20160065226A (ko) * | 2014-11-07 | 2016-06-09 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| JP6797526B2 (ja) * | 2014-11-11 | 2020-12-09 | 株式会社荏原製作所 | 基板洗浄装置 |
| JP6545511B2 (ja) | 2015-04-10 | 2019-07-17 | 株式会社東芝 | 処理装置 |
| KR101704494B1 (ko) * | 2015-05-26 | 2017-02-09 | 주식회사 케이씨텍 | 고속 유체 분사 노즐 및 이를 이용한 기판 처리 장치 |
| CN108369905B (zh) * | 2015-12-07 | 2022-08-23 | 东京毅力科创株式会社 | 基板清洗装置 |
| US20170178918A1 (en) * | 2015-12-18 | 2017-06-22 | Globalfoundries Inc. | Post-polish wafer cleaning |
| US11355366B2 (en) | 2018-08-30 | 2022-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for shuttered wafer cleaning |
| US11791173B2 (en) * | 2019-03-21 | 2023-10-17 | Samsung Electronics Co., Ltd. | Substrate cleaning equipment, substrate treatment system including the same, and method of fabricating semiconductor device using the substrate cleaning equipment |
| TWI765192B (zh) * | 2019-11-19 | 2022-05-21 | 大量科技股份有限公司 | 化學機械研磨裝置之研磨墊檢測方法與研磨墊檢測裝置 |
| JP7407574B2 (ja) * | 2019-11-29 | 2024-01-04 | 東京エレクトロン株式会社 | 基板処理装置、及び基板処理方法 |
| CN112122197A (zh) * | 2020-09-11 | 2020-12-25 | 鹤壁市人民医院 | 一种医疗用重症监护护理消毒装置 |
| JP7584965B2 (ja) * | 2020-09-24 | 2024-11-18 | 芝浦メカトロニクス株式会社 | 洗浄装置 |
| US12198944B2 (en) | 2020-11-11 | 2025-01-14 | Applied Materials, Inc. | Substrate handling in a modular polishing system with single substrate cleaning chambers |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020148916A1 (en) | 1999-07-01 | 2002-10-17 | Lam Research Corporation | Spin, rinse, and dry station with adjustable nozzle assembly for semiconductor wafer backside rinsing |
| JP2004079767A (ja) | 2002-08-19 | 2004-03-11 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置および基板洗浄方法 |
| US20040200513A1 (en) | 2000-09-22 | 2004-10-14 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| JP2005353739A (ja) | 2004-06-09 | 2005-12-22 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置 |
| US20060068093A1 (en) | 2002-12-26 | 2006-03-30 | Hideo Shite | Coating device and coating film forming method |
| US20070006904A1 (en) | 2005-06-27 | 2007-01-11 | Spc Electronics Corporation | Substrate cleaning system and substrate cleaning method |
| US20070044823A1 (en) | 2005-08-30 | 2007-03-01 | Tokyo Electron Limited | Substrate cleaning device and substrate cleaning method |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS549178B2 (enExample) | 1973-05-19 | 1979-04-21 | ||
| US5372652A (en) * | 1993-06-14 | 1994-12-13 | International Business Machines Corporation | Aerosol cleaning method |
| JP3504023B2 (ja) * | 1995-05-26 | 2004-03-08 | 株式会社ルネサステクノロジ | 洗浄装置および洗浄方法 |
| JP3286539B2 (ja) * | 1996-10-30 | 2002-05-27 | 信越半導体株式会社 | 洗浄装置および洗浄方法 |
| JPH10308374A (ja) | 1997-03-06 | 1998-11-17 | Ebara Corp | 洗浄方法及び洗浄装置 |
| US6491764B2 (en) * | 1997-09-24 | 2002-12-10 | Interuniversitair Microelektronics Centrum (Imec) | Method and apparatus for removing a liquid from a surface of a rotating substrate |
| US7527698B2 (en) * | 1998-09-23 | 2009-05-05 | Interuniversitair Microelektronica Centrum (Imec, Vzw) | Method and apparatus for removing a liquid from a surface of a substrate |
| KR100726015B1 (ko) * | 1999-10-06 | 2007-06-08 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판세정방법 및 그 장치 |
| JP3865602B2 (ja) * | 2001-06-18 | 2007-01-10 | 大日本スクリーン製造株式会社 | 基板洗浄装置 |
| TW561516B (en) * | 2001-11-01 | 2003-11-11 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
| KR100871343B1 (ko) * | 2002-03-29 | 2008-12-01 | 주식회사 케이씨텍 | 2유체 혼합물에 의한 기판 세정용 노즐 |
| US7387455B2 (en) * | 2002-06-07 | 2008-06-17 | Tokyo Electron Limited | Substrate processing device, substrate processing method, and developing device |
| US6770424B2 (en) * | 2002-12-16 | 2004-08-03 | Asml Holding N.V. | Wafer track apparatus and methods for dispensing fluids with rotatable dispense arms |
| JP2004335671A (ja) * | 2003-05-07 | 2004-11-25 | Renesas Technology Corp | 枚葉式2流体洗浄装置及び半導体装置の洗浄方法 |
| KR100758220B1 (ko) * | 2005-10-20 | 2007-09-17 | 주식회사 케이씨텍 | 다중 슬릿형 노즐을 가지는 기판 세정 장치 및 이를 이용한세정 방법 |
| JP4547016B2 (ja) * | 2008-04-04 | 2010-09-22 | 東京エレクトロン株式会社 | 半導体製造装置、半導体製造方法 |
| KR101041872B1 (ko) * | 2008-11-26 | 2011-06-16 | 세메스 주식회사 | 노즐 및 이를 이용한 기판 처리 장치 및 방법 |
| JP5294944B2 (ja) | 2009-03-31 | 2013-09-18 | 株式会社荏原製作所 | 基板の洗浄方法 |
| US20110289795A1 (en) * | 2010-02-16 | 2011-12-01 | Tomoatsu Ishibashi | Substrate drying apparatus, substrate drying method and control program |
| JP2012174933A (ja) * | 2011-02-22 | 2012-09-10 | Toppan Printing Co Ltd | 基板処理装置及び基板処理方法 |
| JP5789400B2 (ja) * | 2011-04-12 | 2015-10-07 | 東京エレクトロン株式会社 | 液処理方法及び液処理装置 |
| TWI548483B (zh) * | 2011-07-19 | 2016-09-11 | 荏原製作所股份有限公司 | 研磨裝置及方法 |
| JP2013089797A (ja) | 2011-10-19 | 2013-05-13 | Ebara Corp | 基板洗浄方法及び基板洗浄装置 |
| JP5528486B2 (ja) * | 2012-02-07 | 2014-06-25 | 東京エレクトロン株式会社 | 基板処理装置、これを備える塗布現像装置、及び基板処理方法 |
| JP5779168B2 (ja) * | 2012-12-04 | 2015-09-16 | 東京エレクトロン株式会社 | 周縁部塗布装置、周縁部塗布方法及び周縁部塗布用記録媒体 |
-
2012
- 2012-12-28 JP JP2012287122A patent/JP6093569B2/ja active Active
-
2013
- 2013-12-18 KR KR1020130157711A patent/KR102103356B1/ko active Active
- 2013-12-23 US US14/139,685 patent/US10737301B2/en active Active
- 2013-12-23 TW TW102147711A patent/TWI586488B/zh active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020148916A1 (en) | 1999-07-01 | 2002-10-17 | Lam Research Corporation | Spin, rinse, and dry station with adjustable nozzle assembly for semiconductor wafer backside rinsing |
| US20040200513A1 (en) | 2000-09-22 | 2004-10-14 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| JP2004079767A (ja) | 2002-08-19 | 2004-03-11 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置および基板洗浄方法 |
| US20060068093A1 (en) | 2002-12-26 | 2006-03-30 | Hideo Shite | Coating device and coating film forming method |
| JP2005353739A (ja) | 2004-06-09 | 2005-12-22 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置 |
| US20070006904A1 (en) | 2005-06-27 | 2007-01-11 | Spc Electronics Corporation | Substrate cleaning system and substrate cleaning method |
| US20070044823A1 (en) | 2005-08-30 | 2007-03-01 | Tokyo Electron Limited | Substrate cleaning device and substrate cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140086840A (ko) | 2014-07-08 |
| US10737301B2 (en) | 2020-08-11 |
| TW201424936A (zh) | 2014-07-01 |
| US20140182634A1 (en) | 2014-07-03 |
| JP2014130884A (ja) | 2014-07-10 |
| TWI586488B (zh) | 2017-06-11 |
| JP6093569B2 (ja) | 2017-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20131218 |
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| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20180813 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20131218 Comment text: Patent Application |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20191118 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20200320 |
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| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20200416 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20200417 End annual number: 3 Start annual number: 1 |
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