JP2014130884A - 基板洗浄装置 - Google Patents
基板洗浄装置 Download PDFInfo
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- JP2014130884A JP2014130884A JP2012287122A JP2012287122A JP2014130884A JP 2014130884 A JP2014130884 A JP 2014130884A JP 2012287122 A JP2012287122 A JP 2012287122A JP 2012287122 A JP2012287122 A JP 2012287122A JP 2014130884 A JP2014130884 A JP 2014130884A
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- 239000000758 substrate Substances 0.000 title claims abstract description 226
- 238000004140 cleaning Methods 0.000 title claims abstract description 119
- 239000012530 fluid Substances 0.000 claims abstract description 143
- 230000007246 mechanism Effects 0.000 claims abstract description 34
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 230000002265 prevention Effects 0.000 claims description 14
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 230000003749 cleanliness Effects 0.000 abstract 1
- 238000005498 polishing Methods 0.000 description 18
- 239000002245 particle Substances 0.000 description 17
- 239000003595 mist Substances 0.000 description 16
- 238000001035 drying Methods 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005661 hydrophobic surface Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000008531 maintenance mechanism Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】表面を上向きにして基板Wを保持し回転させる基板保持機構40と、気体と液体との2流体ジェット流を基板保持機構40で保持された基板Wの表面に向けて下向きに噴射する2流体ノズル46と、2流体ノズル46を基板保持機構40で保持された基板の中心部から外方に向けて一方向に移動させる移動機構48とを有し、2流体ノズルから噴射される2流体ジェット流が、該2流体ジェット流の噴射中心線O2と鉛直線Vとの間に所定の傾斜角αをもって、2流体ノズル46の進行方向Mに沿った前方で基板Wの表面と衝突するように構成されている。
【選択図】図6
Description
これにより、2流体ノズルから噴射される2流体ジェット流が基板の表面に衝突するときの両者の相対速度を高め、2流体ジェット流の基板の表面への衝撃力を高めて、より高い洗浄特性を得ることができる。
これにより、基板の表面に衝突して跳ね返り、2流体ノズルの進行方向に沿った基板の外方に向かって流れる2流体ジェット流を、集中通気口を通して、飛散防止カップの内部に速やかに回収することができる。
これにより、集中排気口を通して、より大量の2流体ジェット流を専用排気ダクトから外部に排気することができる。
14a〜14d 研磨ユニット
16 第1洗浄ユニット(基板洗浄装置)
18 第2洗浄ユニット
20 乾燥ユニット
24 搬送ユニット
40 基板保持機構
42 支持軸
44 揺動アーム
46,80,82,84 2流体ノズル
46a,80a,82a,84a 噴射口
48 移動機構
50 チャック
52 アーム
54 回転軸
60 飛散防止カップ
60a 集中排気口
62 排気ダクト
64 専用排気ダクト
70 パーティクル
Claims (7)
- 表面を上向きにして基板を保持し回転させる基板保持機構と、
気体と液体との2流体ジェット流を前記基板保持機構で保持された基板の表面に向けて下向きに噴射する2流体ノズルと、
前記2流体ノズルを前記基板保持機構で保持された基板の中心部から外方に向けて一方向に移動させる移動機構とを有し、
前記2流体ノズルから噴射される2流体ジェット流が、該2流体ジェット流の噴射中心線と鉛直線との間に所定の傾斜角をもって、前記2流体ノズルの進行方向に沿った前方で基板の表面と衝突するように構成されていることを特徴とする基板洗浄装置。 - 前記傾斜角θは、0°を超え45°以下であることを特徴とする請求項1に記載の基板洗浄装置。
- 前記2流体ノズルから噴射される2流体ジェット流が、該2流体ジェット流の噴射中心線と2流体ノズルの進行方向に沿った直線との間に平面上の所定の捻れ角をもって、基板の回転方向の上流側で基板の表面と衝突するように構成されていることを特徴とする請求項1または2に記載の基板洗浄装置。
- 前記捻れ角は、0°を超え30°以下であることを特徴とする請求項3に記載の基板洗浄装置。
- 前記2流体噴射ノズルの噴射口は、長方形状の細長い形状を有していることを特徴とする請求項1乃至4のいずれかに記載の基板洗浄装置。
- 前記基板保持部で保持した基板の周囲を囲繞する飛散防止カップを有し、前記飛散防止カップの前記2流体ノズルの進行方向に沿った前方位置には、開口部を拡げた集中排気口が設けられていることを特徴とする請求項1乃至5のいずれかに記載の基板洗浄装置。
- 前記集中排気口は、専用の排気ダクトに連通していることを特徴とする請求項6に記載の基板洗浄装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012287122A JP6093569B2 (ja) | 2012-12-28 | 2012-12-28 | 基板洗浄装置 |
KR1020130157711A KR102103356B1 (ko) | 2012-12-28 | 2013-12-18 | 기판 세정 장치 |
US14/139,685 US10737301B2 (en) | 2012-12-28 | 2013-12-23 | Substrate cleaning apparatus |
TW102147711A TWI586488B (zh) | 2012-12-28 | 2013-12-23 | 基板洗淨裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012287122A JP6093569B2 (ja) | 2012-12-28 | 2012-12-28 | 基板洗浄装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014130884A true JP2014130884A (ja) | 2014-07-10 |
JP2014130884A5 JP2014130884A5 (ja) | 2015-08-27 |
JP6093569B2 JP6093569B2 (ja) | 2017-03-08 |
Family
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Family Applications (1)
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---|---|---|---|
JP2012287122A Active JP6093569B2 (ja) | 2012-12-28 | 2012-12-28 | 基板洗浄装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10737301B2 (ja) |
JP (1) | JP6093569B2 (ja) |
KR (1) | KR102103356B1 (ja) |
TW (1) | TWI586488B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016198854A (ja) * | 2015-04-10 | 2016-12-01 | 株式会社東芝 | 処理装置 |
KR20160138769A (ko) * | 2015-05-26 | 2016-12-06 | 주식회사 케이씨텍 | 고속 유체 분사 노즐 및 이를 이용한 기판 처리 장치 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104971916B (zh) * | 2014-04-01 | 2020-07-07 | 株式会社荏原制作所 | 清洗装置及清洗方法 |
JP6600470B2 (ja) | 2014-04-01 | 2019-10-30 | 株式会社荏原製作所 | 洗浄装置及び洗浄方法 |
KR20160065226A (ko) * | 2014-11-07 | 2016-06-09 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN108369905B (zh) * | 2015-12-07 | 2022-08-23 | 东京毅力科创株式会社 | 基板清洗装置 |
US20170178918A1 (en) * | 2015-12-18 | 2017-06-22 | Globalfoundries Inc. | Post-polish wafer cleaning |
US11355366B2 (en) * | 2018-08-30 | 2022-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for shuttered wafer cleaning |
US11791173B2 (en) * | 2019-03-21 | 2023-10-17 | Samsung Electronics Co., Ltd. | Substrate cleaning equipment, substrate treatment system including the same, and method of fabricating semiconductor device using the substrate cleaning equipment |
TWI765192B (zh) * | 2019-11-19 | 2022-05-21 | 大量科技股份有限公司 | 化學機械研磨裝置之研磨墊檢測方法與研磨墊檢測裝置 |
CN112122197A (zh) * | 2020-09-11 | 2020-12-25 | 鹤壁市人民医院 | 一种医疗用重症监护护理消毒装置 |
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2012
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-
2013
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- 2013-12-23 US US14/139,685 patent/US10737301B2/en active Active
- 2013-12-23 TW TW102147711A patent/TWI586488B/zh active
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2016198854A (ja) * | 2015-04-10 | 2016-12-01 | 株式会社東芝 | 処理装置 |
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Also Published As
Publication number | Publication date |
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TWI586488B (zh) | 2017-06-11 |
US20140182634A1 (en) | 2014-07-03 |
JP6093569B2 (ja) | 2017-03-08 |
TW201424936A (zh) | 2014-07-01 |
US10737301B2 (en) | 2020-08-11 |
KR20140086840A (ko) | 2014-07-08 |
KR102103356B1 (ko) | 2020-04-22 |
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