JP7407574B2 - 基板処理装置、及び基板処理方法 - Google Patents
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- 238000012545 processing Methods 0.000 title claims description 27
- 238000003672 processing method Methods 0.000 title claims description 10
- 239000007788 liquid Substances 0.000 claims description 198
- 238000001035 drying Methods 0.000 claims description 100
- 239000012530 fluid Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 25
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
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- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- KFUSEUYYWQURPO-OWOJBTEDSA-N trans-1,2-dichloroethene Chemical group Cl\C=C\Cl KFUSEUYYWQURPO-OWOJBTEDSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/28—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with integral means for shielding the discharged liquid or other fluent material, e.g. to limit area of spray; with integral means for catching drips or collecting surplus liquid or other fluent material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/02—Drying solid materials or objects by processes involving the application of heat by convection, i.e. heat being conveyed from a heat source to the materials or objects to be dried by a gas or vapour, e.g. air
- F26B3/06—Drying solid materials or objects by processes involving the application of heat by convection, i.e. heat being conveyed from a heat source to the materials or objects to be dried by a gas or vapour, e.g. air the gas or vapour flowing through the materials or objects to be dried
- F26B3/08—Drying solid materials or objects by processes involving the application of heat by convection, i.e. heat being conveyed from a heat source to the materials or objects to be dried by a gas or vapour, e.g. air the gas or vapour flowing through the materials or objects to be dried so as to loosen them, e.g. to form a fluidised bed
- F26B3/082—Drying solid materials or objects by processes involving the application of heat by convection, i.e. heat being conveyed from a heat source to the materials or objects to be dried by a gas or vapour, e.g. air the gas or vapour flowing through the materials or objects to be dried so as to loosen them, e.g. to form a fluidised bed arrangements of devices for distributing fluidising gas, e.g. grids, nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microbiology (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
2 保持部
3 基板回転部
5 ノズル
51 第1ノズル部
52 第2ノズル部
6 供給部
62 第1流量制御器
64 第2流量制御器
Claims (12)
- 基板を水平に保持する保持部と、
前記保持部と共に前記基板を鉛直な回転軸の周りに回転させる基板回転部と、
前記保持部で保持された前記基板の上面に流体を供給するノズルと、
前記ノズルに前記流体を供給する供給部と、
前記ノズルを前記基板の径方向に移動させる移動部と、
を備え、
前記ノズルは、前記流体を吐出する第1ノズル部と、前記第1ノズル部とは異なる方向に前記流体を吐出する第2ノズル部とを有し、
前記第1ノズル部の射線と、前記第2ノズル部の射線とは、交差点で交差しており、
前記供給部は、前記第1ノズル部の吐出量を制御する第1流量制御器と、前記第2ノズル部の吐出量を前記第1ノズル部の吐出量とは独立して制御する第2流量制御器とを有し、
前記ノズルは、前記第1ノズル部の射線を中心に、前記第2ノズル部を回転させる回転部を更に含む、基板処理装置。 - 前記第2ノズル部は、前記第1ノズル部の射線の周りに等間隔で4つ以上配置される、請求項1に記載の基板処理装置。
- 前記第1ノズル部は、真下の前記交差点に向けて前記流体を吐出する吐出口を含み、
前記第2ノズル部は、斜め下の前記交差点に向けて前記流体を吐出する吐出口を含む、請求項1又は2に記載の基板処理装置。 - 前記第1ノズル部の吐出口の面積は、前記第2ノズル部の吐出口の面積以上である、請求項1~3のいずれか1項に記載の基板処理装置。
- 前記流体は、前記基板の上面全体を覆った後で前記基板の中心から周縁に向けて前記基板を徐々に露出させる乾燥液、又は前記乾燥液の開口縁を押さえる乾燥ガスである、請求項1~4のいずれか1項に記載の基板処理装置。
- 前記基板の上面における前記流体の衝突角を検出する検出部と、
前記検出部の検出値と設定値の偏差が小さくなるように前記第1流量制御器及び前記第2流量制御器を制御する制御部と、
を備える、請求項1~5のいずれか1項に記載の基板処理装置。 - 基板を水平に保持すると共に前記基板を鉛直な回転軸の周りに回転した状態で、前記基板の上面に流体を供給するノズルを、前記基板の径方向に移動させることを有し、
前記ノズルは、前記流体を吐出する第1ノズル部と、前記第1ノズル部とは異なる方向に前記流体を吐出する第2ノズル部とを有し、
前記第1ノズル部の射線と、前記第2ノズル部の射線とは、交差点で交差しており、
前記基板の径方向に前記ノズルを移動させる途中で、前記第1ノズル部の吐出量、及び前記第2ノズル部の吐出量の少なくとも1つを変更することと、前記第1ノズル部の射線を中心に前記第2ノズル部を回転させることと、を有する、基板処理方法。 - 前記第1ノズル部は、真下の前記交差点に向けて前記流体を吐出し、
前記第2ノズル部は、斜め下の前記交差点に向けて前記流体を吐出する、請求項7に記載の基板処理方法。 - 前記ノズルを前記基板の径方向内側から径方向外側に移動させる過程で、第1衝突角を連続的又は段階的に小さくすることを含み、
前記第1衝突角は、前記基板の上面における前記流体の衝突点と前記基板の上面の中心点とを結ぶ直線方向から見て、前記交差点と前記衝突点とを結ぶ直線と前記基板の上面とのなす角であり、
前記基板の上面における前記交差点の真下の直下点よりも、前記衝突点が前記基板の回転方向前方にずれるほど、前記第1衝突角が小さくなる、請求項7又は8に記載の基板処理方法。 - 前記ノズルを前記基板の径方向内側から径方向外側に移動させる過程で、第2衝突角を連続的又は段階的に大きくすることを含み、
前記第2衝突角は、前記基板の上面における前記交差点の真下の直下点と前記基板の上面における前記流体の衝突点とを結ぶ直線と、前記基板の上面の中心点を中心とする円の前記衝突点での接線とのなす角であり、
前記衝突点が前記直下点よりも前記基板の径方向外方にずれるほど、前記第2衝突角が大きくなる、請求項7~9のいずれか1項に記載の基板処理方法。 - 前記ノズルを前記基板の径方向内側から径方向外側に移動させる過程で、第3衝突角を連続的又は段階的に小さくすることを含み、
前記第3衝突角は、前記基板の上面の中心点を中心とする円の、前記基板の上面における前記流体の衝突点での接線方向から見て、前記交差点と前記衝突点とを結ぶ直線と前記基板の上面とのなす角であり、
前記基板の上面における前記交差点の真下の直下点よりも、前記衝突点が前記基板の径方向外方にずれるほど、前記第3衝突角が小さくなる、請求項7~10のいずれか1項に記載の基板処理方法。 - 前記流体は、前記基板の上面全体を覆った後で前記基板の中心から周縁に向けて前記基板を徐々に露出させる乾燥液、又は前記乾燥液の開口縁を押さえる乾燥ガスである、請求項7~11のいずれか1項に記載の基板処理方法。
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JP2019217116A JP7407574B2 (ja) | 2019-11-29 | 2019-11-29 | 基板処理装置、及び基板処理方法 |
CN202011299955.3A CN112885739A (zh) | 2019-11-29 | 2020-11-19 | 基片处理装置和基片处理方法 |
KR1020200156712A KR20210067893A (ko) | 2019-11-29 | 2020-11-20 | 기판 처리 장치 및 기판 처리 방법 |
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JP2003273070A (ja) | 2002-03-19 | 2003-09-26 | Shibaura Mechatronics Corp | 基板処理装置及び基板処理方法 |
JP2011054819A (ja) | 2009-09-03 | 2011-03-17 | Shibaura Mechatronics Corp | 基板処理装置および基板処理方法 |
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JP3277404B2 (ja) * | 1993-03-31 | 2002-04-22 | ソニー株式会社 | 基板洗浄方法及び基板洗浄装置 |
JP6016330B2 (ja) | 2011-03-28 | 2016-10-26 | 株式会社Screenホールディングス | 基板処理装置 |
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JP2003273070A (ja) | 2002-03-19 | 2003-09-26 | Shibaura Mechatronics Corp | 基板処理装置及び基板処理方法 |
JP2011054819A (ja) | 2009-09-03 | 2011-03-17 | Shibaura Mechatronics Corp | 基板処理装置および基板処理方法 |
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