KR102098795B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102098795B1
KR102098795B1 KR1020157032280A KR20157032280A KR102098795B1 KR 102098795 B1 KR102098795 B1 KR 102098795B1 KR 1020157032280 A KR1020157032280 A KR 1020157032280A KR 20157032280 A KR20157032280 A KR 20157032280A KR 102098795 B1 KR102098795 B1 KR 102098795B1
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South Korea
Prior art keywords
layer
oxide semiconductor
oxide
transistor
semiconductor layer
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Expired - Fee Related
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KR1020157032280A
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Korean (ko)
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KR20160009552A (ko
Inventor
슌페이 야마자키
？페이 야마자키
히데오미 스자와
유타카 오카자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H01L29/78606—
    • H01L29/66969—
    • H01L29/78648—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13069—Thin film transistor [TFT]

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020157032280A 2013-05-20 2014-05-01 반도체 장치 Expired - Fee Related KR102098795B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013106331 2013-05-20
JPJP-P-2013-106331 2013-05-20
PCT/JP2014/062541 WO2014188893A1 (en) 2013-05-20 2014-05-01 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207009631A Division KR20200038333A (ko) 2013-05-20 2014-05-01 반도체 장치

Publications (2)

Publication Number Publication Date
KR20160009552A KR20160009552A (ko) 2016-01-26
KR102098795B1 true KR102098795B1 (ko) 2020-04-08

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020217008768A Active KR102376226B1 (ko) 2013-05-20 2014-05-01 반도체 장치
KR1020207009631A Ceased KR20200038333A (ko) 2013-05-20 2014-05-01 반도체 장치
KR1020157032280A Expired - Fee Related KR102098795B1 (ko) 2013-05-20 2014-05-01 반도체 장치

Family Applications Before (2)

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KR1020217008768A Active KR102376226B1 (ko) 2013-05-20 2014-05-01 반도체 장치
KR1020207009631A Ceased KR20200038333A (ko) 2013-05-20 2014-05-01 반도체 장치

Country Status (8)

Country Link
US (3) US9209307B2 (enExample)
JP (1) JP6314034B2 (enExample)
KR (3) KR102376226B1 (enExample)
CN (3) CN109860278A (enExample)
DE (1) DE112014002485T5 (enExample)
SG (2) SG10201707381WA (enExample)
TW (3) TWI611583B (enExample)
WO (1) WO2014188893A1 (enExample)

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JP2015053477A (ja) 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
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TWI646690B (zh) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
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JP6444714B2 (ja) 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
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KR102799986B1 (ko) 2014-11-28 2025-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
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CN107408579B (zh) * 2015-03-03 2021-04-02 株式会社半导体能源研究所 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置
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US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
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