KR102097177B1 - 파워 모듈용 기판, 히트싱크가 부착된 파워 모듈용 기판 및 파워 모듈 - Google Patents

파워 모듈용 기판, 히트싱크가 부착된 파워 모듈용 기판 및 파워 모듈 Download PDF

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KR102097177B1
KR102097177B1 KR1020147026866A KR20147026866A KR102097177B1 KR 102097177 B1 KR102097177 B1 KR 102097177B1 KR 1020147026866 A KR1020147026866 A KR 1020147026866A KR 20147026866 A KR20147026866 A KR 20147026866A KR 102097177 B1 KR102097177 B1 KR 102097177B1
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power module
metal layer
insulating substrate
heat sink
substrate
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KR20140147090A (ko
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요시유키 나가토모
노부유키 데라사키
요시로우 구로미츠
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미쓰비시 마테리알 가부시키가이샤
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
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    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
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    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
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    • H05K1/02—Details
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    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
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    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
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    • B23K2103/00—Materials to be soldered, welded or cut
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Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5672324B2 (ja) 2013-03-18 2015-02-18 三菱マテリアル株式会社 接合体の製造方法及びパワーモジュール用基板の製造方法
JP6111764B2 (ja) * 2013-03-18 2017-04-12 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
US9969654B2 (en) 2014-01-24 2018-05-15 United Technologies Corporation Method of bonding a metallic component to a non-metallic component using a compliant material
JP6384112B2 (ja) 2014-04-25 2018-09-05 三菱マテリアル株式会社 パワーモジュール用基板及びヒートシンク付パワーモジュール用基板
JP6299442B2 (ja) * 2014-06-03 2018-03-28 三菱マテリアル株式会社 パワーモジュール
DE102014211562A1 (de) * 2014-06-17 2015-12-17 Robert Bosch Gmbh Halbleiteranordnung mit einer Wärmesenke
JP5954371B2 (ja) 2014-08-05 2016-07-20 三菱マテリアル株式会社 パワーモジュール用基板及びその製造方法
JP6459427B2 (ja) * 2014-11-20 2019-01-30 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板の製造方法、及び、接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク
CN104456247B (zh) * 2014-11-28 2017-09-05 宁波市柯玛士太阳能科技有限公司 一种条形灯
WO2016121159A1 (ja) * 2015-01-26 2016-08-04 三菱電機株式会社 半導体装置および半導体装置の製造方法
US10109555B2 (en) 2015-02-02 2018-10-23 Kabushiki Kaisha Toshiba Silicon nitride circuit board and electronic component module using the same
WO2016158020A1 (ja) * 2015-04-01 2016-10-06 富士電機株式会社 半導体モジュール
JP2017063127A (ja) * 2015-09-25 2017-03-30 三菱マテリアル株式会社 発光モジュール用基板、発光モジュール、冷却器付き発光モジュール用基板、および発光モジュール用基板の製造方法
CN205491580U (zh) * 2015-11-30 2016-08-17 比亚迪股份有限公司 Igbt散热模组以及具有其的igbt模组
CN115172290B (zh) * 2016-07-14 2024-12-13 株式会社东芝 陶瓷电路基板及半导体模块
JP6776953B2 (ja) * 2017-03-07 2020-10-28 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板
US11735434B2 (en) 2017-03-29 2023-08-22 Mitsubishi Materials Corporation Method for producing insulating circuit substrate with heat sink
US11167363B2 (en) * 2017-05-10 2021-11-09 Board Of Trustees Of Michigan State University Brazing methods using porous interlayers and related articles
CN107819066B (zh) * 2017-10-26 2018-10-16 成都万士达瓷业有限公司 一种低氧铜烧结dbc半导体热电基片的生产方法
DE112018006382B4 (de) * 2017-12-13 2025-01-09 Mitsubishi Electric Corporation Halbleitereinheit und Verfahren zur Herstellung einer Halbleitereinheit
JP6911805B2 (ja) * 2018-03-27 2021-07-28 三菱マテリアル株式会社 ヒートシンク付き絶縁回路基板の製造方法
US11297745B2 (en) * 2018-03-28 2022-04-05 The Board Of Trustees Of The University Of Illinois Active thermal management system for electronic devices and method of achieving device-to-device isothermalization
JP7143659B2 (ja) * 2018-07-18 2022-09-29 三菱マテリアル株式会社 金属ベース基板
JP7167642B2 (ja) * 2018-11-08 2022-11-09 三菱マテリアル株式会社 接合体、ヒートシンク付絶縁回路基板、及び、ヒートシンク
WO2020111107A1 (ja) * 2018-11-28 2020-06-04 三菱マテリアル株式会社 接合体、ヒートシンク付絶縁回路基板、及び、ヒートシンク
JP7363613B2 (ja) * 2020-03-13 2023-10-18 三菱マテリアル株式会社 ヒートシンク一体型絶縁回路基板
EP4123697A4 (en) * 2020-03-18 2024-04-24 Mitsubishi Materials Corporation INSULATED CIRCUIT BOARD
CN111755413A (zh) * 2020-07-07 2020-10-09 深圳基本半导体有限公司 一种高导热率碳化硅器件封装结构及方法
JP2023070910A (ja) * 2021-11-10 2023-05-22 株式会社レゾナック 半導体装置、半導体装置の製造方法
CN114918572B (zh) * 2022-07-19 2022-11-04 北京理工大学 一种铝-铝的瞬态液相连接方法
EP4371691A4 (en) * 2022-09-27 2024-10-16 Jiangsu Contemporary Amperex Technology Limited WELDING BASE, WELDING UNIT, AND ULTRASONIC WELDING MACHINE

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221547A (ja) * 2002-12-27 2004-08-05 Mitsubishi Materials Corp 熱伝導性複層基板及びパワーモジュール用基板
JP2007081202A (ja) 2005-09-15 2007-03-29 Mitsubishi Materials Corp 絶縁回路基板および冷却シンク部付き絶縁回路基板
JP2008227336A (ja) 2007-03-15 2008-09-25 Hitachi Metals Ltd 半導体モジュール、これに用いられる回路基板
JP2010238932A (ja) 2009-03-31 2010-10-21 Mitsubishi Materials Corp パワーモジュール用基板、ヒートシンク付パワーモジュール用基板及びパワーモジュールの製造方法
JP2012023404A (ja) * 2011-10-28 2012-02-02 Hitachi Metals Ltd 回路基板およびこれを用いた半導体モジュール
JP2012064801A (ja) * 2010-09-16 2012-03-29 Mitsubishi Materials Corp ヒートシンク付パワーモジュール用基板、パワーモジュール及びヒートシンク付パワーモジュール用基板の製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04162756A (ja) 1990-10-26 1992-06-08 Toshiba Corp 半導体モジュール
JP3171234B2 (ja) 1997-03-26 2001-05-28 三菱マテリアル株式会社 ヒートシンク付セラミック回路基板
JP4756200B2 (ja) 2000-09-04 2011-08-24 Ｄｏｗａメタルテック株式会社 金属セラミックス回路基板
JP2002203942A (ja) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
JP3676268B2 (ja) 2001-08-01 2005-07-27 株式会社日立製作所 伝熱構造体及び半導体装置
JP2003197826A (ja) 2001-12-26 2003-07-11 Toshiba Corp セラミックス回路基板およびそれを用いた半導体モジュール
JP4496404B2 (ja) * 2003-10-10 2010-07-07 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
JP4918856B2 (ja) * 2004-04-05 2012-04-18 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
JP2006253183A (ja) * 2005-03-08 2006-09-21 Hitachi Ltd 半導体パワーモジュール
JP4617209B2 (ja) * 2005-07-07 2011-01-19 株式会社豊田自動織機 放熱装置
JP2007081200A (ja) * 2005-09-15 2007-03-29 Mitsubishi Materials Corp 冷却シンク部付き絶縁回路基板
JP2007180457A (ja) * 2005-12-28 2007-07-12 Toyota Industries Corp 半田付け方法及び半導体モジュールの製造方法並びに半田付け装置
CN101401197B (zh) * 2006-03-08 2011-05-18 株式会社东芝 电子元器件模块
JP4893096B2 (ja) 2006-05-01 2012-03-07 日立金属株式会社 回路基板およびこれを用いた半導体モジュール
JP4629016B2 (ja) * 2006-10-27 2011-02-09 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板およびヒートシンク付パワーモジュール用基板の製造方法並びにパワーモジュール
JP4978221B2 (ja) 2007-02-05 2012-07-18 三菱マテリアル株式会社 回路基板の製造装置及び製造方法、その製造方法に用いられるクッションシート
CN101971329B (zh) 2008-03-17 2012-11-21 三菱综合材料株式会社 带散热片的功率模块用基板及其制造方法、以及带散热片的功率模块、功率模块用基板
DE102008000825A1 (de) * 2008-03-26 2009-10-01 Robert Bosch Gmbh Keramik-Metall-Verbundsubstrat
JP4807378B2 (ja) 2008-05-16 2011-11-02 三菱マテリアル株式会社 パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
JP4567773B2 (ja) 2008-07-18 2010-10-20 三菱電機株式会社 電力用半導体装置
JP2010129867A (ja) * 2008-11-28 2010-06-10 Mitsubishi Electric Corp 電力用半導体装置
EP2315242A1 (en) * 2009-10-23 2011-04-27 ABB Technology AG Circuit arrangement and manufacturing method thereof
JP3171234U (ja) 2011-08-09 2011-10-20 正宜 田辺 簡易温室

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221547A (ja) * 2002-12-27 2004-08-05 Mitsubishi Materials Corp 熱伝導性複層基板及びパワーモジュール用基板
JP2007081202A (ja) 2005-09-15 2007-03-29 Mitsubishi Materials Corp 絶縁回路基板および冷却シンク部付き絶縁回路基板
JP2008227336A (ja) 2007-03-15 2008-09-25 Hitachi Metals Ltd 半導体モジュール、これに用いられる回路基板
JP2010238932A (ja) 2009-03-31 2010-10-21 Mitsubishi Materials Corp パワーモジュール用基板、ヒートシンク付パワーモジュール用基板及びパワーモジュールの製造方法
JP2012064801A (ja) * 2010-09-16 2012-03-29 Mitsubishi Materials Corp ヒートシンク付パワーモジュール用基板、パワーモジュール及びヒートシンク付パワーモジュール用基板の製造方法
JP2012023404A (ja) * 2011-10-28 2012-02-02 Hitachi Metals Ltd 回路基板およびこれを用いた半導体モジュール

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