KR102083688B1 - Ｓｏｉ 웨이퍼를 인시츄로 패시베이션하기 위한 방법 - Google Patents

Ｓｏｉ 웨이퍼를 인시츄로 패시베이션하기 위한 방법 Download PDF

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KR102083688B1
KR102083688B1 KR1020137002599A KR20137002599A KR102083688B1 KR 102083688 B1 KR102083688 B1 KR 102083688B1 KR 1020137002599 A KR1020137002599 A KR 1020137002599A KR 20137002599 A KR20137002599 A KR 20137002599A KR 102083688 B1 KR102083688 B1 KR 102083688B1
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wafer
chamber
cleaved
cleaved surface
soi wafer
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KR20130129897A (ko
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마이클 제이. 리스
데일 에이. 위틀
안카 스테파네스쿠
앤드류 엠. 존스
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글로벌웨이퍼스 씨오., 엘티디.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
KR1020137002599A 2010-06-30 2011-06-30 Ｓｏｉ 웨이퍼를 인시츄로 패시베이션하기 위한 방법 Active KR102083688B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35999810P 2010-06-30 2010-06-30
US61/359,998 2010-06-30
PCT/IB2011/052903 WO2012001659A2 (en) 2010-06-30 2011-06-30 Methods for in-situ passivation of silicon-on-insulator wafers

Related Child Applications (1)

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KR1020187009456A Division KR20180037326A (ko) 2010-06-30 2011-06-30 Ｓｏｉ 웨이퍼를 인시츄로 패시베이션하기 위한 방법

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KR20130129897A KR20130129897A (ko) 2013-11-29
KR102083688B1 true KR102083688B1 (ko) 2020-03-02

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KR1020137002599A Active KR102083688B1 (ko) 2010-06-30 2011-06-30 Ｓｏｉ 웨이퍼를 인시츄로 패시베이션하기 위한 방법
KR1020197020821A Ceased KR20190087668A (ko) 2010-06-30 2011-06-30 Ｓｏｉ 웨이퍼를 인시츄로 패시베이션하기 위한 방법
KR1020187009456A Ceased KR20180037326A (ko) 2010-06-30 2011-06-30 Ｓｏｉ 웨이퍼를 인시츄로 패시베이션하기 위한 방법

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KR1020187009456A Ceased KR20180037326A (ko) 2010-06-30 2011-06-30 Ｓｏｉ 웨이퍼를 인시츄로 패시베이션하기 위한 방법

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Country Link
US (1) US8859393B2 (https=)
EP (1) EP2589075A2 (https=)
JP (1) JP5989642B2 (https=)
KR (3) KR102083688B1 (https=)
CN (1) CN102959697A (https=)
SG (1) SG186853A1 (https=)
TW (1) TW201216414A (https=)
WO (1) WO2012001659A2 (https=)

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JP6726180B2 (ja) 2014-11-18 2020-07-22 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 高抵抗率半導体・オン・インシュレータウエハおよび製造方法
EP4120320A1 (en) 2015-03-03 2023-01-18 GlobalWafers Co., Ltd. Charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
CN107408532A (zh) 2015-03-17 2017-11-28 太阳能爱迪生半导体有限公司 用于绝缘体上半导体结构的制造的热稳定电荷捕获层
US9881832B2 (en) 2015-03-17 2018-01-30 Sunedison Semiconductor Limited (Uen201334164H) Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof
CN107873106B (zh) 2015-06-01 2022-03-18 环球晶圆股份有限公司 制造绝缘体上硅锗的方法
WO2016196060A1 (en) 2015-06-01 2016-12-08 Sunedison Semiconductor Limited A method of manufacturing semiconductor-on-insulator
JP6749394B2 (ja) 2015-11-20 2020-09-02 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 滑らかな半導体表面の製造方法
US10468294B2 (en) 2016-02-19 2019-11-05 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface
US10622247B2 (en) 2016-02-19 2020-04-14 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a buried high resistivity layer
US9831115B2 (en) 2016-02-19 2017-11-28 Sunedison Semiconductor Limited (Uen201334164H) Process flow for manufacturing semiconductor on insulator structures in parallel
EP3758050A1 (en) 2016-03-07 2020-12-30 GlobalWafers Co., Ltd. Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof
WO2017155804A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment
US11114332B2 (en) 2016-03-07 2021-09-07 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
WO2017155806A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
CN111201341B (zh) 2016-06-08 2023-04-04 环球晶圆股份有限公司 具有经改进的机械强度的高电阻率单晶硅锭及晶片
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
EP4723861A2 (en) 2016-10-26 2026-04-08 GlobalWafers Co., Ltd. High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
CN115714130A (zh) 2016-12-05 2023-02-24 环球晶圆股份有限公司 高电阻率绝缘体上硅结构及其制造方法
CN114093764B (zh) 2016-12-28 2025-07-22 太阳能爱迪生半导体有限公司 单晶硅晶片
FR3061988B1 (fr) * 2017-01-13 2019-11-01 Soitec Procede de lissage de surface d'un substrat semiconducteur sur isolant
SG11201913769RA (en) 2017-07-14 2020-01-30 Sunedison Semiconductor Ltd Method of manufacture of a semiconductor on insulator structure
US10916416B2 (en) 2017-11-14 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with modified surface and fabrication method thereof
JP7160943B2 (ja) 2018-04-27 2022-10-25 グローバルウェーハズ カンパニー リミテッド 半導体ドナー基板からの層移転を容易にする光アシスト板状体形成
EP4210092A1 (en) 2018-06-08 2023-07-12 GlobalWafers Co., Ltd. Method for transfer of a thin layer of silicon
US11296277B2 (en) 2018-10-16 2022-04-05 Samsung Electronics Co., Ltd. Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same

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Publication number Publication date
SG186853A1 (en) 2013-02-28
JP5989642B2 (ja) 2016-09-07
WO2012001659A2 (en) 2012-01-05
TW201216414A (en) 2012-04-16
KR20180037326A (ko) 2018-04-11
JP2013534731A (ja) 2013-09-05
EP2589075A2 (en) 2013-05-08
US8859393B2 (en) 2014-10-14
KR20130129897A (ko) 2013-11-29
US20120003814A1 (en) 2012-01-05
CN102959697A (zh) 2013-03-06
KR20190087668A (ko) 2019-07-24
WO2012001659A3 (en) 2012-03-01

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