KR102010224B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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KR102010224B1
KR102010224B1 KR1020147035015A KR20147035015A KR102010224B1 KR 102010224 B1 KR102010224 B1 KR 102010224B1 KR 1020147035015 A KR1020147035015 A KR 1020147035015A KR 20147035015 A KR20147035015 A KR 20147035015A KR 102010224 B1 KR102010224 B1 KR 102010224B1
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South Korea
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metal film
insulating film
film formed
opening
pad
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KR1020147035015A
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Korean (ko)
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KR20150020313A (ko
Inventor
도모미츠 리사키
쇼지 나카니시
히토미 사쿠라이
고이치 시마자키
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에이블릭 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
KR1020147035015A 2012-06-15 2013-05-21 반도체 장치 Active KR102010224B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-136288 2012-06-15
JP2012136288A JP6008603B2 (ja) 2012-06-15 2012-06-15 半導体装置
PCT/JP2013/063999 WO2013187187A1 (ja) 2012-06-15 2013-05-21 半導体装置

Publications (2)

Publication Number Publication Date
KR20150020313A KR20150020313A (ko) 2015-02-25
KR102010224B1 true KR102010224B1 (ko) 2019-08-13

Family

ID=49758019

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147035015A Active KR102010224B1 (ko) 2012-06-15 2013-05-21 반도체 장치

Country Status (7)

Country Link
US (2) US20150162296A1 (https=)
EP (1) EP2863419B1 (https=)
JP (1) JP6008603B2 (https=)
KR (1) KR102010224B1 (https=)
CN (1) CN104350586B (https=)
TW (1) TWI588959B (https=)
WO (1) WO2013187187A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11355467B2 (en) 2020-01-15 2022-06-07 Samsung Electronics Co., Ltd. Semiconductor devices including thick pad

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6215755B2 (ja) 2014-04-14 2017-10-18 ルネサスエレクトロニクス株式会社 半導体装置
JP2017045910A (ja) * 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
CN211788920U (zh) * 2017-07-24 2020-10-27 株式会社村田制作所 半导体装置
WO2020103875A1 (en) 2018-11-21 2020-05-28 Changxin Memory Technologies, Inc. Distribution layer structure and manufacturing method thereof, and bond pad structure
JP2021072341A (ja) 2019-10-30 2021-05-06 キオクシア株式会社 半導体装置
US11887949B2 (en) * 2021-08-18 2024-01-30 Macronix International Co., Ltd. Bond pad layout including floating conductive sections
US12009327B2 (en) * 2021-08-30 2024-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267105B1 (ko) * 1997-12-09 2000-11-01 윤종용 다층패드를구비한반도체소자및그제조방법
JP2005019493A (ja) * 2003-06-24 2005-01-20 Renesas Technology Corp 半導体装置
US20080001296A1 (en) 2005-04-18 2008-01-03 Chao-Chun Tu Bond pad structures and semiconductor devices using the same

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JPH0469942A (ja) 1990-07-11 1992-03-05 Hitachi Ltd キャピラリー及び半導体装置及びワイヤーボンディング方法
JP3086158B2 (ja) * 1995-07-26 2000-09-11 株式会社日立製作所 超音波ボンディング方法
JP3482779B2 (ja) * 1996-08-20 2004-01-06 セイコーエプソン株式会社 半導体装置およびその製造方法
TW430935B (en) * 1999-03-19 2001-04-21 Ind Tech Res Inst Frame type bonding pad structure having a low parasitic capacitance
JP4502173B2 (ja) * 2003-02-03 2010-07-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP2005005565A (ja) * 2003-06-13 2005-01-06 Matsushita Electric Ind Co Ltd 半導体装置
US7115985B2 (en) * 2004-09-30 2006-10-03 Agere Systems, Inc. Reinforced bond pad for a semiconductor device
JP4517843B2 (ja) * 2004-12-10 2010-08-04 エルピーダメモリ株式会社 半導体装置
US7385297B1 (en) * 2005-11-14 2008-06-10 National Semiconductor Corporation Under-bond pad structures for integrated circuit devices
US7253531B1 (en) * 2006-05-12 2007-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor bonding pad structure
DE102006046182B4 (de) * 2006-09-29 2010-11-11 Infineon Technologies Ag Halbleiterelement mit einer Stützstruktur sowie Herstellungsverfahren
JP5329068B2 (ja) * 2007-10-22 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置
US8148797B2 (en) * 2008-06-26 2012-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Chip pad resistant to antenna effect and method
US8138616B2 (en) * 2008-07-07 2012-03-20 Mediatek Inc. Bond pad structure
US8183663B2 (en) * 2008-12-18 2012-05-22 Samsung Electronics Co., Ltd. Crack resistant circuit under pad structure and method of manufacturing the same
JP5250018B2 (ja) 2010-12-13 2013-07-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267105B1 (ko) * 1997-12-09 2000-11-01 윤종용 다층패드를구비한반도체소자및그제조방법
JP2005019493A (ja) * 2003-06-24 2005-01-20 Renesas Technology Corp 半導体装置
US20080001296A1 (en) 2005-04-18 2008-01-03 Chao-Chun Tu Bond pad structures and semiconductor devices using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11355467B2 (en) 2020-01-15 2022-06-07 Samsung Electronics Co., Ltd. Semiconductor devices including thick pad
US11652076B2 (en) 2020-01-15 2023-05-16 Samsung Electronics Co., Ltd. Semiconductor devices including thick pad

Also Published As

Publication number Publication date
EP2863419A4 (en) 2016-11-23
JP6008603B2 (ja) 2016-10-19
US20180294243A1 (en) 2018-10-11
TWI588959B (zh) 2017-06-21
KR20150020313A (ko) 2015-02-25
US20150162296A1 (en) 2015-06-11
CN104350586B (zh) 2017-05-31
TW201411795A (zh) 2014-03-16
CN104350586A (zh) 2015-02-11
WO2013187187A1 (ja) 2013-12-19
JP2014003097A (ja) 2014-01-09
EP2863419A1 (en) 2015-04-22
US10497662B2 (en) 2019-12-03
EP2863419B1 (en) 2022-05-11

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