CN104350586B - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN104350586B
CN104350586B CN201380029681.8A CN201380029681A CN104350586B CN 104350586 B CN104350586 B CN 104350586B CN 201380029681 A CN201380029681 A CN 201380029681A CN 104350586 B CN104350586 B CN 104350586B
Authority
CN
China
Prior art keywords
metal film
opening
pad
insulating film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380029681.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN104350586A (zh
Inventor
理崎智光
中西章滋
樱井仁美
岛崎洸
岛崎洸一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN104350586A publication Critical patent/CN104350586A/zh
Application granted granted Critical
Publication of CN104350586B publication Critical patent/CN104350586B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
CN201380029681.8A 2012-06-15 2013-05-21 半导体装置 Active CN104350586B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012136288A JP6008603B2 (ja) 2012-06-15 2012-06-15 半導体装置
JP2012-136288 2012-06-15
PCT/JP2013/063999 WO2013187187A1 (ja) 2012-06-15 2013-05-21 半導体装置

Publications (2)

Publication Number Publication Date
CN104350586A CN104350586A (zh) 2015-02-11
CN104350586B true CN104350586B (zh) 2017-05-31

Family

ID=49758019

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380029681.8A Active CN104350586B (zh) 2012-06-15 2013-05-21 半导体装置

Country Status (7)

Country Link
US (2) US20150162296A1 (https=)
EP (1) EP2863419B1 (https=)
JP (1) JP6008603B2 (https=)
KR (1) KR102010224B1 (https=)
CN (1) CN104350586B (https=)
TW (1) TWI588959B (https=)
WO (1) WO2013187187A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6215755B2 (ja) 2014-04-14 2017-10-18 ルネサスエレクトロニクス株式会社 半導体装置
JP2017045910A (ja) * 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
CN211788920U (zh) * 2017-07-24 2020-10-27 株式会社村田制作所 半导体装置
WO2020103875A1 (en) 2018-11-21 2020-05-28 Changxin Memory Technologies, Inc. Distribution layer structure and manufacturing method thereof, and bond pad structure
JP2021072341A (ja) 2019-10-30 2021-05-06 キオクシア株式会社 半導体装置
KR102807817B1 (ko) 2020-01-15 2025-05-14 삼성전자주식회사 반도체 소자들
US11887949B2 (en) * 2021-08-18 2024-01-30 Macronix International Co., Ltd. Bond pad layout including floating conductive sections
US12009327B2 (en) * 2021-08-30 2024-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5884835A (en) * 1995-07-26 1999-03-23 Hitachi, Ltd. Ultrasonic bonding method and ultrasonic bonding apparatus
US6313537B1 (en) * 1997-12-09 2001-11-06 Samsung Electronics Co., Ltd. Semiconductor device having multi-layered pad and a manufacturing method thereof
CN1519924A (zh) * 2003-02-03 2004-08-11 �����ɷ� 半导体器件及其制造方法
US20090102059A1 (en) * 2007-10-22 2009-04-23 Renesas Technology Corp. Semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0469942A (ja) 1990-07-11 1992-03-05 Hitachi Ltd キャピラリー及び半導体装置及びワイヤーボンディング方法
JP3482779B2 (ja) * 1996-08-20 2004-01-06 セイコーエプソン株式会社 半導体装置およびその製造方法
TW430935B (en) * 1999-03-19 2001-04-21 Ind Tech Res Inst Frame type bonding pad structure having a low parasitic capacitance
JP2005005565A (ja) * 2003-06-13 2005-01-06 Matsushita Electric Ind Co Ltd 半導体装置
JP2005019493A (ja) * 2003-06-24 2005-01-20 Renesas Technology Corp 半導体装置
US7115985B2 (en) * 2004-09-30 2006-10-03 Agere Systems, Inc. Reinforced bond pad for a semiconductor device
JP4517843B2 (ja) * 2004-12-10 2010-08-04 エルピーダメモリ株式会社 半導体装置
US7646087B2 (en) * 2005-04-18 2010-01-12 Mediatek Inc. Multiple-dies semiconductor device with redistributed layer pads
US7385297B1 (en) * 2005-11-14 2008-06-10 National Semiconductor Corporation Under-bond pad structures for integrated circuit devices
US7253531B1 (en) * 2006-05-12 2007-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor bonding pad structure
DE102006046182B4 (de) * 2006-09-29 2010-11-11 Infineon Technologies Ag Halbleiterelement mit einer Stützstruktur sowie Herstellungsverfahren
US8148797B2 (en) * 2008-06-26 2012-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Chip pad resistant to antenna effect and method
US8138616B2 (en) * 2008-07-07 2012-03-20 Mediatek Inc. Bond pad structure
US8183663B2 (en) * 2008-12-18 2012-05-22 Samsung Electronics Co., Ltd. Crack resistant circuit under pad structure and method of manufacturing the same
JP5250018B2 (ja) 2010-12-13 2013-07-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5884835A (en) * 1995-07-26 1999-03-23 Hitachi, Ltd. Ultrasonic bonding method and ultrasonic bonding apparatus
US6313537B1 (en) * 1997-12-09 2001-11-06 Samsung Electronics Co., Ltd. Semiconductor device having multi-layered pad and a manufacturing method thereof
CN1519924A (zh) * 2003-02-03 2004-08-11 �����ɷ� 半导体器件及其制造方法
US20090102059A1 (en) * 2007-10-22 2009-04-23 Renesas Technology Corp. Semiconductor device

Also Published As

Publication number Publication date
EP2863419A4 (en) 2016-11-23
JP6008603B2 (ja) 2016-10-19
US20180294243A1 (en) 2018-10-11
TWI588959B (zh) 2017-06-21
KR20150020313A (ko) 2015-02-25
US20150162296A1 (en) 2015-06-11
KR102010224B1 (ko) 2019-08-13
TW201411795A (zh) 2014-03-16
CN104350586A (zh) 2015-02-11
WO2013187187A1 (ja) 2013-12-19
JP2014003097A (ja) 2014-01-09
EP2863419A1 (en) 2015-04-22
US10497662B2 (en) 2019-12-03
EP2863419B1 (en) 2022-05-11

Similar Documents

Publication Publication Date Title
CN104350586B (zh) 半导体装置
JP5342154B2 (ja) 半導体装置の製造方法
CN1208820C (zh) 半导体晶片、半导体装置及其制造方法
CN102804507B (zh) 电缆连接构造
CN105814687A (zh) 半导体封装及其安装结构
TW200529384A (en) Semiconductor device and method of manufacturing the same
CN104600043A (zh) 半导体器件和用于制造半导体器件的方法
CN101383333A (zh) 半导体封装
JP3898350B2 (ja) 半導体装置
CN100587947C (zh) 半导体元件及其制造方法
CN105895614A (zh) 半导体装置及其制造方法
JP2010206021A (ja) 電子部品実装構造体、およびその製造方法
CN101192581B (zh) 半导体装置及半导体封装体
WO2021187187A1 (ja) 半導体装置、半導体装置の製造方法、及び電子機器
JP2007049045A (ja) 半導体発光素子およびこれを備えた半導体装置
US7479706B2 (en) Chip package structure
CN1332440C (zh) 半导体器件
CN101604673B (zh) 焊垫结构
CN1905180B (zh) 半导体器件
US20050161792A1 (en) Junction member and multichip package using same
JP4221019B2 (ja) 半導体装置
US10910330B2 (en) Pad structure and integrated circuit die using the same
CN100508179C (zh) 内连线结构
TW200812027A (en) Flip-chip attach structure and method
CN100550373C (zh) 多芯片封装结构及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20160304

Address after: Chiba County, Japan

Applicant after: DynaFine Semiconductor Co.,Ltd.

Address before: Chiba, Chiba, Japan

Applicant before: Seiko Instruments Inc.

GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: ABLIC Inc.

Address before: Chiba County, Japan

Patentee before: DynaFine Semiconductor Co.,Ltd.

CP01 Change in the name or title of a patent holder
CP02 Change in the address of a patent holder

Address after: Nagano

Patentee after: ABLIC Inc.

Address before: Chiba County, Japan

Patentee before: ABLIC Inc.

CP02 Change in the address of a patent holder