KR102006115B1 - 캐비티 구조를 이용한 웨이퍼 레벨 패키지 (wlp) 볼 지지체를 갖는 직접 회로 디바이스 - Google Patents

캐비티 구조를 이용한 웨이퍼 레벨 패키지 (wlp) 볼 지지체를 갖는 직접 회로 디바이스 Download PDF

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KR102006115B1
KR102006115B1 KR1020187010749A KR20187010749A KR102006115B1 KR 102006115 B1 KR102006115 B1 KR 102006115B1 KR 1020187010749 A KR1020187010749 A KR 1020187010749A KR 20187010749 A KR20187010749 A KR 20187010749A KR 102006115 B1 KR102006115 B1 KR 102006115B1
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South Korea
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conductive pads
dielectric layer
cavities
conductors
package
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Korean (ko)
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KR20180056686A (ko
Inventor
마리오 프란시스코 벨레즈
데이비드 프랜시스 버디
창한 호비 윤
종해 김
청제 줘
대익 다니엘 김
제-슝 제프리 란
니란잔 수닐 무다카테
로버트 폴 미쿨카
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퀄컴 인코포레이티드
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    • H01L23/49816—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H01L23/13—
    • H01L24/03—
    • H01L24/09—
    • H01L24/11—
    • H01L24/17—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/936—Multiple bond pads having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H10W80/732—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having shape changed during the connecting

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
KR1020187010749A 2015-09-20 2016-09-20 캐비티 구조를 이용한 웨이퍼 레벨 패키지 (wlp) 볼 지지체를 갖는 직접 회로 디바이스 Active KR102006115B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/859,323 US10074625B2 (en) 2015-09-20 2015-09-20 Wafer level package (WLP) ball support using cavity structure
US14/859,323 2015-09-20
PCT/US2016/052631 WO2017049324A1 (en) 2015-09-20 2016-09-20 Wafer level package (wlp) ball support using cavity structure

Publications (2)

Publication Number Publication Date
KR20180056686A KR20180056686A (ko) 2018-05-29
KR102006115B1 true KR102006115B1 (ko) 2019-07-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187010749A Active KR102006115B1 (ko) 2015-09-20 2016-09-20 캐비티 구조를 이용한 웨이퍼 레벨 패키지 (wlp) 볼 지지체를 갖는 직접 회로 디바이스

Country Status (8)

Country Link
US (1) US10074625B2 (https=)
EP (1) EP3350831A1 (https=)
JP (1) JP6549790B2 (https=)
KR (1) KR102006115B1 (https=)
CN (1) CN108028243B (https=)
BR (1) BR112018005532B1 (https=)
CA (1) CA2995621A1 (https=)
WO (1) WO2017049324A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240057513A (ko) 2022-10-24 2024-05-03 삼성전자주식회사 반도체 패키지

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020121692A1 (en) * 2001-03-05 2002-09-05 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
US20100319974A1 (en) * 2008-02-19 2010-12-23 Naomi Ishizuka Printed wiring board, electronic device, and method for manufacturing electronic device

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3070514B2 (ja) * 1997-04-28 2000-07-31 日本電気株式会社 突起電極を有する半導体装置、半導体装置の実装方法およびその実装構造
JP3019851B1 (ja) * 1998-12-22 2000-03-13 日本電気株式会社 半導体装置実装構造
GB2389460A (en) 1998-12-22 2003-12-10 Nec Corp Mounting semiconductor packages on substrates
JP3446825B2 (ja) * 1999-04-06 2003-09-16 沖電気工業株式会社 半導体装置およびその製造方法
JP2002050716A (ja) * 2000-08-02 2002-02-15 Dainippon Printing Co Ltd 半導体装置及びその作製方法
JP3842548B2 (ja) * 2000-12-12 2006-11-08 富士通株式会社 半導体装置の製造方法及び半導体装置
JP2003198068A (ja) 2001-12-27 2003-07-11 Nec Corp プリント基板、半導体装置、およびプリント基板と部品との電気的接続構造
US6854633B1 (en) * 2002-02-05 2005-02-15 Micron Technology, Inc. System with polymer masking flux for fabricating external contacts on semiconductor components
JP2004103928A (ja) * 2002-09-11 2004-04-02 Fujitsu Ltd 基板及びハンダボールの形成方法及びその実装構造
US7043830B2 (en) 2003-02-20 2006-05-16 Micron Technology, Inc. Method of forming conductive bumps
US8193092B2 (en) * 2007-07-31 2012-06-05 Micron Technology, Inc. Semiconductor devices including a through-substrate conductive member with an exposed end and methods of manufacturing such semiconductor devices
JP2012221998A (ja) * 2011-04-04 2012-11-12 Toshiba Corp 半導体装置ならびにその製造方法
JP5682496B2 (ja) * 2011-07-28 2015-03-11 富士通セミコンダクター株式会社 半導体装置、マルチチップ半導体装置、デバイス、及び半導体装置の製造方法
KR101840447B1 (ko) * 2011-08-09 2018-03-20 에스케이하이닉스 주식회사 반도체 패키지 및 이를 갖는 적층 반도체 패키지
JP2013074054A (ja) * 2011-09-27 2013-04-22 Renesas Electronics Corp 電子装置、配線基板、及び、電子装置の製造方法
JP2013080805A (ja) * 2011-10-03 2013-05-02 Sumitomo Bakelite Co Ltd 補強部材の製造方法
US9129973B2 (en) * 2011-12-07 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit probing structures and methods for probing the same
US20130154112A1 (en) * 2011-12-16 2013-06-20 Katholieke Universiteit Leuven, K.U. Leuven R&D Method for Forming Isolation Trenches in Micro-Bump Interconnect Structures and Devices Obtained Thereof
US8963336B2 (en) * 2012-08-03 2015-02-24 Samsung Electronics Co., Ltd. Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same
US8963335B2 (en) 2012-09-13 2015-02-24 Invensas Corporation Tunable composite interposer
US9343419B2 (en) * 2012-12-14 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structures for semiconductor package
EP2747132B1 (en) * 2012-12-18 2018-11-21 IMEC vzw A method for transferring a graphene sheet to metal contact bumps of a substrate for use in semiconductor device package
US10163828B2 (en) * 2013-11-18 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and fabricating method thereof
US9484318B2 (en) * 2014-02-17 2016-11-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
US20150237732A1 (en) 2014-02-18 2015-08-20 Qualcomm Incorporated Low-profile package with passive device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020121692A1 (en) * 2001-03-05 2002-09-05 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
US20100319974A1 (en) * 2008-02-19 2010-12-23 Naomi Ishizuka Printed wiring board, electronic device, and method for manufacturing electronic device

Also Published As

Publication number Publication date
EP3350831A1 (en) 2018-07-25
JP6549790B2 (ja) 2019-07-24
JP2018527754A (ja) 2018-09-20
WO2017049324A1 (en) 2017-03-23
CN108028243A (zh) 2018-05-11
CN108028243B (zh) 2021-05-14
CA2995621A1 (en) 2017-03-23
US20170084565A1 (en) 2017-03-23
US10074625B2 (en) 2018-09-11
BR112018005532B1 (pt) 2023-03-07
BR112018005532A2 (https=) 2018-10-02
KR20180056686A (ko) 2018-05-29

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