KR102001356B1 - 비트 불량 및 가상 검사를 이용한 웨이퍼 검사 공정의 생성 - Google Patents

비트 불량 및 가상 검사를 이용한 웨이퍼 검사 공정의 생성 Download PDF

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KR102001356B1
KR102001356B1 KR1020187022407A KR20187022407A KR102001356B1 KR 102001356 B1 KR102001356 B1 KR 102001356B1 KR 1020187022407 A KR1020187022407 A KR 1020187022407A KR 20187022407 A KR20187022407 A KR 20187022407A KR 102001356 B1 KR102001356 B1 KR 102001356B1
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wafer
defects
physical locations
inspection
defect detection
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KR20180093090A (ko
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포 분 용
조지 시몬
위에종 두
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케이엘에이-텐코 코포레이션
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    • H01L22/20
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • H01L22/12
    • H01L22/14
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00Television systems
    • H04N7/18Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020187022407A 2012-01-18 2013-01-17 비트 불량 및 가상 검사를 이용한 웨이퍼 검사 공정의 생성 Active KR102001356B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261587911P 2012-01-18 2012-01-18
US61/587,911 2012-01-18
US13/743,074 US9277186B2 (en) 2012-01-18 2013-01-16 Generating a wafer inspection process using bit failures and virtual inspection
US13/743,074 2013-01-16
PCT/US2013/021880 WO2013109714A1 (en) 2012-01-18 2013-01-17 Generating a wafer inspection process using bit failures and virtual inspection

Related Parent Applications (1)

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KR1020147022835A Division KR101886853B1 (ko) 2012-01-18 2013-01-17 비트 불량 및 가상 검사를 이용한 웨이퍼 검사 공정의 생성

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KR20180093090A KR20180093090A (ko) 2018-08-20
KR102001356B1 true KR102001356B1 (ko) 2019-07-17

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KR1020147022835A Active KR101886853B1 (ko) 2012-01-18 2013-01-17 비트 불량 및 가상 검사를 이용한 웨이퍼 검사 공정의 생성

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US (2) US9277186B2 (https=)
JP (2) JP6180435B2 (https=)
KR (2) KR102001356B1 (https=)
CN (2) CN108062558B (https=)
TW (1) TWI625803B (https=)
WO (1) WO2013109714A1 (https=)

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US10127653B2 (en) * 2014-07-22 2018-11-13 Kla-Tencor Corp. Determining coordinates for an area of interest on a specimen
US9816939B2 (en) 2014-07-22 2017-11-14 Kla-Tencor Corp. Virtual inspection systems with multiple modes
US10133263B1 (en) 2014-08-18 2018-11-20 Kla-Tencor Corporation Process condition based dynamic defect inspection
US10267746B2 (en) 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation
US9830421B2 (en) * 2014-12-31 2017-11-28 Kla-Tencor Corp. Alignment of inspection to design using built in targets
US10012599B2 (en) * 2015-04-03 2018-07-03 Kla-Tencor Corp. Optical die to database inspection
US10018571B2 (en) * 2015-05-28 2018-07-10 Kla-Tencor Corporation System and method for dynamic care area generation on an inspection tool
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WO2018134287A1 (en) * 2017-01-18 2018-07-26 Asml Netherlands B.V. Cascade defect inspection
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JP7404009B2 (ja) * 2019-09-19 2023-12-25 キオクシア株式会社 加工情報管理システム及び加工情報管理方法
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JP3556509B2 (ja) * 1999-03-16 2004-08-18 株式会社東芝 欠陥解析システムおよびその方法
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JP6185693B2 (ja) * 2008-06-11 2017-08-23 ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の1つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法
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Publication number Publication date
US20160163606A1 (en) 2016-06-09
CN108062558A (zh) 2018-05-22
CN104137120A (zh) 2014-11-05
KR20140124778A (ko) 2014-10-27
KR101886853B1 (ko) 2018-08-09
KR20180093090A (ko) 2018-08-20
TWI625803B (zh) 2018-06-01
JP2015509196A (ja) 2015-03-26
TW201344822A (zh) 2013-11-01
CN108062558B (zh) 2022-10-11
JP6180435B2 (ja) 2017-08-16
WO2013109714A1 (en) 2013-07-25
JP2017216466A (ja) 2017-12-07
US9277186B2 (en) 2016-03-01
US20130182101A1 (en) 2013-07-18
US10014229B2 (en) 2018-07-03
CN104137120B (zh) 2018-01-02
JP6342046B2 (ja) 2018-06-13

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