JP2017216466A - ビット不良および仮想検査を用いたウェハ検査プロセスの生成 - Google Patents
ビット不良および仮想検査を用いたウェハ検査プロセスの生成 Download PDFInfo
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- JP2017216466A JP2017216466A JP2017138801A JP2017138801A JP2017216466A JP 2017216466 A JP2017216466 A JP 2017216466A JP 2017138801 A JP2017138801 A JP 2017138801A JP 2017138801 A JP2017138801 A JP 2017138801A JP 2017216466 A JP2017216466 A JP 2017216466A
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- 238000007689 inspection Methods 0.000 title claims abstract description 159
- 238000000034 method Methods 0.000 title claims abstract description 136
- 230000008569 process Effects 0.000 title claims abstract description 58
- 230000007547 defect Effects 0.000 claims abstract description 238
- 238000001514 detection method Methods 0.000 claims abstract description 79
- 238000012360 testing method Methods 0.000 claims abstract description 14
- 235000012431 wafers Nutrition 0.000 description 146
- 238000003860 storage Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 8
- 238000000926 separation method Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000011990 functional testing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N7/00—Television systems
- H04N7/18—Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
Claims (1)
- ウェハ検査プロセスを生成するためのコンピュータで実行される方法であって:
ウェハを検査システムでスキャニングして、ウェハ上の欠陥を検出し;
スキャニング中の検査システムの1以上の検出器の出力を、出力がウェハ上で検出される欠陥に対応するか否かに関係なく保存し;
ウェハの試験によって検出されたビット不良に対応するウェハ上の物理的な位置を、欠陥が検出されなかった物理的な位置の第1部分と欠陥が検出された物理的な位置の第2部分とに分離し;
1以上の欠陥検出方法を、物理的な位置の第1部分に対応する保存された出力に適用して、物理的な位置の第1部分での欠陥を検出するものであり、前記適用は、物理的な位置の第1部分に対応する前記保存された出力に1以上の欠陥検出方法を繰り返し適用し、物理的な位置の第1部分で検出された欠陥をビット不良と比較し、物理的な位置の第1部分で欠陥が検出されるまで1以上の欠陥検出方法の1以上のパラメータを変更することを含み、;
物理的な位置の第1部分で1以上の欠陥検出方法によって検出される欠陥に基づいてウェハ検査プロセスを生成することを含み、前記保存、分離、適用、および生成がコンピュータシステムで実施される、方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261587911P | 2012-01-18 | 2012-01-18 | |
US61/587,911 | 2012-01-18 | ||
US13/743,074 | 2013-01-16 | ||
US13/743,074 US9277186B2 (en) | 2012-01-18 | 2013-01-16 | Generating a wafer inspection process using bit failures and virtual inspection |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014553401A Division JP6180435B2 (ja) | 2012-01-18 | 2013-01-17 | ビット不良および仮想検査を用いたウェハ検査プロセスの生成 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017216466A true JP2017216466A (ja) | 2017-12-07 |
JP6342046B2 JP6342046B2 (ja) | 2018-06-13 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2014553401A Active JP6180435B2 (ja) | 2012-01-18 | 2013-01-17 | ビット不良および仮想検査を用いたウェハ検査プロセスの生成 |
JP2017138801A Active JP6342046B2 (ja) | 2012-01-18 | 2017-07-18 | ビット不良および仮想検査を用いたウェハ検査プロセスの生成 |
Family Applications Before (1)
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JP2014553401A Active JP6180435B2 (ja) | 2012-01-18 | 2013-01-17 | ビット不良および仮想検査を用いたウェハ検査プロセスの生成 |
Country Status (6)
Country | Link |
---|---|
US (2) | US9277186B2 (ja) |
JP (2) | JP6180435B2 (ja) |
KR (2) | KR102001356B1 (ja) |
CN (2) | CN108062558B (ja) |
TW (1) | TWI625803B (ja) |
WO (1) | WO2013109714A1 (ja) |
Families Citing this family (20)
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US9277186B2 (en) * | 2012-01-18 | 2016-03-01 | Kla-Tencor Corp. | Generating a wafer inspection process using bit failures and virtual inspection |
US20140245066A1 (en) * | 2013-02-27 | 2014-08-28 | Lionel J. Riviere-Cazaux | Scan diagnosis analysis using callout clustering |
US20140282327A1 (en) * | 2013-03-14 | 2014-09-18 | Nvidia Corporation | Cutter in diagnosis (cid) a method to improve the throughput of the yield ramp up process |
US9338134B2 (en) | 2013-03-27 | 2016-05-10 | Fortinet, Inc. | Firewall policy management |
US9355208B2 (en) * | 2013-07-08 | 2016-05-31 | Kla-Tencor Corp. | Detecting defects on a wafer |
US9470743B2 (en) * | 2014-03-04 | 2016-10-18 | Nvidia Corporation | Dynamic yield prediction |
TWI548013B (zh) * | 2014-03-04 | 2016-09-01 | 旺宏電子股份有限公司 | 結合實體座標之位元失效偵測方法 |
US9816939B2 (en) | 2014-07-22 | 2017-11-14 | Kla-Tencor Corp. | Virtual inspection systems with multiple modes |
US10127653B2 (en) * | 2014-07-22 | 2018-11-13 | Kla-Tencor Corp. | Determining coordinates for an area of interest on a specimen |
US10133263B1 (en) | 2014-08-18 | 2018-11-20 | Kla-Tencor Corporation | Process condition based dynamic defect inspection |
US10267746B2 (en) | 2014-10-22 | 2019-04-23 | Kla-Tencor Corp. | Automated pattern fidelity measurement plan generation |
US9830421B2 (en) * | 2014-12-31 | 2017-11-28 | Kla-Tencor Corp. | Alignment of inspection to design using built in targets |
US10012599B2 (en) * | 2015-04-03 | 2018-07-03 | Kla-Tencor Corp. | Optical die to database inspection |
US10018571B2 (en) * | 2015-05-28 | 2018-07-10 | Kla-Tencor Corporation | System and method for dynamic care area generation on an inspection tool |
US9916965B2 (en) * | 2015-12-31 | 2018-03-13 | Kla-Tencor Corp. | Hybrid inspectors |
US10002447B1 (en) | 2016-05-20 | 2018-06-19 | Shanghai United Imaging Healthcare Co., Ltd. | System and method for computed tomography |
CN110709887B (zh) * | 2017-01-18 | 2023-10-24 | Asml荷兰有限公司 | 级联缺陷检查 |
JP7209513B2 (ja) * | 2018-11-21 | 2023-01-20 | 三菱電機株式会社 | 半導体チップの製造方法および半導体ウェハ |
JP7404009B2 (ja) * | 2019-09-19 | 2023-12-25 | キオクシア株式会社 | 加工情報管理システム及び加工情報管理方法 |
KR102459337B1 (ko) * | 2020-12-21 | 2022-10-28 | 주식회사 에타맥스 | 실리콘 카바이드 웨이퍼의 결함을 회피하는 다이 구획방법 및 검사장치 |
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2013
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- 2013-01-17 CN CN201711205806.4A patent/CN108062558B/zh active Active
- 2013-01-17 CN CN201380009561.1A patent/CN104137120B/zh active Active
- 2013-01-17 KR KR1020187022407A patent/KR102001356B1/ko active IP Right Grant
- 2013-01-17 WO PCT/US2013/021880 patent/WO2013109714A1/en active Application Filing
- 2013-01-17 JP JP2014553401A patent/JP6180435B2/ja active Active
- 2013-01-17 KR KR1020147022835A patent/KR101886853B1/ko active IP Right Grant
- 2013-01-18 TW TW102102110A patent/TWI625803B/zh active
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Also Published As
Publication number | Publication date |
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CN104137120A (zh) | 2014-11-05 |
JP6342046B2 (ja) | 2018-06-13 |
CN104137120B (zh) | 2018-01-02 |
KR20180093090A (ko) | 2018-08-20 |
JP6180435B2 (ja) | 2017-08-16 |
WO2013109714A1 (en) | 2013-07-25 |
KR102001356B1 (ko) | 2019-07-17 |
TWI625803B (zh) | 2018-06-01 |
CN108062558A (zh) | 2018-05-22 |
US9277186B2 (en) | 2016-03-01 |
KR20140124778A (ko) | 2014-10-27 |
US20130182101A1 (en) | 2013-07-18 |
CN108062558B (zh) | 2022-10-11 |
US10014229B2 (en) | 2018-07-03 |
JP2015509196A (ja) | 2015-03-26 |
TW201344822A (zh) | 2013-11-01 |
US20160163606A1 (en) | 2016-06-09 |
KR101886853B1 (ko) | 2018-08-09 |
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