KR101979944B1 - 발광소자 - Google Patents

발광소자 Download PDF

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Publication number
KR101979944B1
KR101979944B1 KR1020120115802A KR20120115802A KR101979944B1 KR 101979944 B1 KR101979944 B1 KR 101979944B1 KR 1020120115802 A KR1020120115802 A KR 1020120115802A KR 20120115802 A KR20120115802 A KR 20120115802A KR 101979944 B1 KR101979944 B1 KR 101979944B1
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KR
South Korea
Prior art keywords
electrode
light emitting
emitting device
semiconductor layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020120115802A
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English (en)
Korean (ko)
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KR20140049689A (ko
Inventor
임동욱
Original Assignee
엘지이노텍 주식회사
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Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120115802A priority Critical patent/KR101979944B1/ko
Priority to US14/056,211 priority patent/US9660160B2/en
Priority to EP13189140.0A priority patent/EP2722899B1/en
Priority to JP2013217084A priority patent/JP2014086728A/ja
Priority to CN201310491634.7A priority patent/CN103779471B/zh
Publication of KR20140049689A publication Critical patent/KR20140049689A/ko
Application granted granted Critical
Publication of KR101979944B1 publication Critical patent/KR101979944B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020120115802A 2012-10-18 2012-10-18 발광소자 Expired - Fee Related KR101979944B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020120115802A KR101979944B1 (ko) 2012-10-18 2012-10-18 발광소자
US14/056,211 US9660160B2 (en) 2012-10-18 2013-10-17 Light emitting device
EP13189140.0A EP2722899B1 (en) 2012-10-18 2013-10-17 Light emitting device
JP2013217084A JP2014086728A (ja) 2012-10-18 2013-10-18 発光素子
CN201310491634.7A CN103779471B (zh) 2012-10-18 2013-10-18 发光器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120115802A KR101979944B1 (ko) 2012-10-18 2012-10-18 발광소자

Publications (2)

Publication Number Publication Date
KR20140049689A KR20140049689A (ko) 2014-04-28
KR101979944B1 true KR101979944B1 (ko) 2019-05-17

Family

ID=49378167

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120115802A Expired - Fee Related KR101979944B1 (ko) 2012-10-18 2012-10-18 발광소자

Country Status (5)

Country Link
US (1) US9660160B2 (https=)
EP (1) EP2722899B1 (https=)
JP (1) JP2014086728A (https=)
KR (1) KR101979944B1 (https=)
CN (1) CN103779471B (https=)

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* Cited by examiner, † Cited by third party
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CN104576862B (zh) * 2014-12-24 2017-08-25 江苏巨晶新材料科技有限公司 一种基于铜衬底的氮化物led垂直芯片及其制备方法
KR102419272B1 (ko) * 2017-12-19 2022-07-11 엘지디스플레이 주식회사 발광 사운드 소자, 사운드 출력 장치 및 디스플레이 장치
CN108281540B (zh) * 2018-01-26 2020-05-22 扬州乾照光电有限公司 一种热电分流垂直结构led芯片及其制作方法
US11658460B2 (en) * 2018-03-26 2023-05-23 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser
KR102097865B1 (ko) * 2018-05-04 2020-05-27 고려대학교 산학협력단 발광소자
EP3748701A4 (en) * 2018-07-09 2022-03-02 Seoul Viosys Co., Ltd LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURE THEREOF
JPWO2020100293A1 (ja) * 2018-11-16 2021-09-24 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020100295A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020100292A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020115851A1 (ja) * 2018-12-06 2020-06-11 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
CN110265520A (zh) * 2019-07-02 2019-09-20 华南理工大学 优化电流分布的嵌入式电极结构led芯片及其制备方法
KR102174004B1 (ko) * 2020-03-31 2020-11-04 고려대학교 산학협력단 발광소자
CN113363365B (zh) * 2021-08-09 2021-11-05 南昌凯捷半导体科技有限公司 一种多电流通道倒装AlGaInPmini-LED芯片及其制备方法
CN116314508A (zh) * 2023-05-22 2023-06-23 江西兆驰半导体有限公司 一种高光效led外延片及其制备方法、led芯片

Citations (2)

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KR100706887B1 (ko) * 2005-10-07 2007-04-12 포모사 에피택시 인코포레이션 발광 다이오드 칩
JP2011060996A (ja) * 2009-09-10 2011-03-24 Napura:Kk 発光ダイオード、発光装置、照明装置、ディスプレイ及び信号灯

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JPH10270802A (ja) * 1997-03-25 1998-10-09 Sharp Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法
JPH11246289A (ja) * 1998-03-02 1999-09-14 Tokuyama Corp メタライズされた窒化アルミニウム基板の製造方法
JP2001176967A (ja) * 1999-12-21 2001-06-29 Nec Corp 半導体装置及びその製造方法
TW439304B (en) * 2000-01-05 2001-06-07 Ind Tech Res Inst GaN series III-V compound semiconductor devices
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6560006B2 (en) * 2001-04-30 2003-05-06 Agilent Technologies, Inc. Two-dimensional photonic crystal slab waveguide
EP2005488B1 (en) * 2005-12-16 2013-07-31 Samsung Display Co., Ltd. Optical device and method of fabricating the same
CN100446288C (zh) * 2006-08-01 2008-12-24 金芃 通孔垂直结构的半导体芯片及其制造方法
JP5324076B2 (ja) * 2007-11-21 2013-10-23 シャープ株式会社 窒化物半導体用ショットキー電極および窒化物半導体装置
KR101145299B1 (ko) * 2008-12-22 2012-05-14 한국과학기술원 질화물／텅스텐 나노복합분말의 제조방법 및 그 방법에 의해 제조된 질화물／텅스텐 나노복합분말
KR101020910B1 (ko) * 2008-12-24 2011-03-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20110008550A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 발광 소자 및 그 제조 방법
JP2011029548A (ja) * 2009-07-29 2011-02-10 Mitsubishi Electric Corp 電磁波透過性加飾部品
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KR101028327B1 (ko) 2010-04-15 2011-04-12 엘지이노텍 주식회사 발광소자, 발광소자 제조방법 및 발광소자 패키지
US20120241718A1 (en) 2011-03-21 2012-09-27 Walsin Lihwa Corporation High performance light emitting diode
US8344392B2 (en) * 2011-05-12 2013-01-01 Epistar Corporation Light-emitting element and the manufacturing method thereof

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KR100706887B1 (ko) * 2005-10-07 2007-04-12 포모사 에피택시 인코포레이션 발광 다이오드 칩
JP2011060996A (ja) * 2009-09-10 2011-03-24 Napura:Kk 発光ダイオード、発光装置、照明装置、ディスプレイ及び信号灯

Also Published As

Publication number Publication date
US20140110742A1 (en) 2014-04-24
EP2722899B1 (en) 2018-07-25
EP2722899A3 (en) 2015-11-18
CN103779471A (zh) 2014-05-07
EP2722899A2 (en) 2014-04-23
US9660160B2 (en) 2017-05-23
KR20140049689A (ko) 2014-04-28
CN103779471B (zh) 2017-03-01
JP2014086728A (ja) 2014-05-12

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