CN103779471B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN103779471B
CN103779471B CN201310491634.7A CN201310491634A CN103779471B CN 103779471 B CN103779471 B CN 103779471B CN 201310491634 A CN201310491634 A CN 201310491634A CN 103779471 B CN103779471 B CN 103779471B
Authority
CN
China
Prior art keywords
electrode
light emitting
semiconductor layer
conductive semiconductor
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310491634.7A
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English (en)
Chinese (zh)
Other versions
CN103779471A (zh
Inventor
林东旭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103779471A publication Critical patent/CN103779471A/zh
Application granted granted Critical
Publication of CN103779471B publication Critical patent/CN103779471B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201310491634.7A 2012-10-18 2013-10-18 发光器件 Expired - Fee Related CN103779471B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120115802A KR101979944B1 (ko) 2012-10-18 2012-10-18 발광소자
KR10-2012-0115802 2012-10-18

Publications (2)

Publication Number Publication Date
CN103779471A CN103779471A (zh) 2014-05-07
CN103779471B true CN103779471B (zh) 2017-03-01

Family

ID=49378167

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310491634.7A Expired - Fee Related CN103779471B (zh) 2012-10-18 2013-10-18 发光器件

Country Status (5)

Country Link
US (1) US9660160B2 (https=)
EP (1) EP2722899B1 (https=)
JP (1) JP2014086728A (https=)
KR (1) KR101979944B1 (https=)
CN (1) CN103779471B (https=)

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CN104576862B (zh) * 2014-12-24 2017-08-25 江苏巨晶新材料科技有限公司 一种基于铜衬底的氮化物led垂直芯片及其制备方法
KR102419272B1 (ko) * 2017-12-19 2022-07-11 엘지디스플레이 주식회사 발광 사운드 소자, 사운드 출력 장치 및 디스플레이 장치
CN108281540B (zh) * 2018-01-26 2020-05-22 扬州乾照光电有限公司 一种热电分流垂直结构led芯片及其制作方法
US11658460B2 (en) * 2018-03-26 2023-05-23 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser
KR102097865B1 (ko) * 2018-05-04 2020-05-27 고려대학교 산학협력단 발광소자
EP3748701A4 (en) * 2018-07-09 2022-03-02 Seoul Viosys Co., Ltd LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURE THEREOF
JPWO2020100293A1 (ja) * 2018-11-16 2021-09-24 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020100295A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020100292A1 (ja) * 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
WO2020115851A1 (ja) * 2018-12-06 2020-06-11 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
CN110265520A (zh) * 2019-07-02 2019-09-20 华南理工大学 优化电流分布的嵌入式电极结构led芯片及其制备方法
KR102174004B1 (ko) * 2020-03-31 2020-11-04 고려대학교 산학협력단 발광소자
CN113363365B (zh) * 2021-08-09 2021-11-05 南昌凯捷半导体科技有限公司 一种多电流通道倒装AlGaInPmini-LED芯片及其制备方法
CN116314508A (zh) * 2023-05-22 2023-06-23 江西兆驰半导体有限公司 一种高光效led外延片及其制备方法、led芯片

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US6201265B1 (en) * 1997-03-25 2001-03-13 Sharp Kabushiki Kaisha Group III-V type nitride compound semiconductor device and method of manufacturing the same
CN102024890A (zh) * 2009-09-10 2011-04-20 纳普拉有限公司 发光二极管、发光装置、照明装置、显示器及信号灯

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JPH11246289A (ja) * 1998-03-02 1999-09-14 Tokuyama Corp メタライズされた窒化アルミニウム基板の製造方法
JP2001176967A (ja) * 1999-12-21 2001-06-29 Nec Corp 半導体装置及びその製造方法
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US6560006B2 (en) * 2001-04-30 2003-05-06 Agilent Technologies, Inc. Two-dimensional photonic crystal slab waveguide
TWI270222B (en) * 2005-10-07 2007-01-01 Formosa Epitaxy Inc Light emitting diode chip
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JP5324076B2 (ja) * 2007-11-21 2013-10-23 シャープ株式会社 窒化物半導体用ショットキー電極および窒化物半導体装置
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KR20110008550A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 발광 소자 및 그 제조 방법
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KR101028327B1 (ko) 2010-04-15 2011-04-12 엘지이노텍 주식회사 발광소자, 발광소자 제조방법 및 발광소자 패키지
US20120241718A1 (en) 2011-03-21 2012-09-27 Walsin Lihwa Corporation High performance light emitting diode
US8344392B2 (en) * 2011-05-12 2013-01-01 Epistar Corporation Light-emitting element and the manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6201265B1 (en) * 1997-03-25 2001-03-13 Sharp Kabushiki Kaisha Group III-V type nitride compound semiconductor device and method of manufacturing the same
CN102024890A (zh) * 2009-09-10 2011-04-20 纳普拉有限公司 发光二极管、发光装置、照明装置、显示器及信号灯

Also Published As

Publication number Publication date
US20140110742A1 (en) 2014-04-24
EP2722899B1 (en) 2018-07-25
KR101979944B1 (ko) 2019-05-17
EP2722899A3 (en) 2015-11-18
CN103779471A (zh) 2014-05-07
EP2722899A2 (en) 2014-04-23
US9660160B2 (en) 2017-05-23
KR20140049689A (ko) 2014-04-28
JP2014086728A (ja) 2014-05-12

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C06 Publication
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GR01 Patent grant
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TR01 Transfer of patent right

Effective date of registration: 20210820

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170301