KR101954410B1 - 플라즈마 에칭을 이용한 반사방지 표면의 제조방법 및 반사방지 표면이 형성된 기판 - Google Patents
플라즈마 에칭을 이용한 반사방지 표면의 제조방법 및 반사방지 표면이 형성된 기판 Download PDFInfo
- Publication number
- KR101954410B1 KR101954410B1 KR1020160106210A KR20160106210A KR101954410B1 KR 101954410 B1 KR101954410 B1 KR 101954410B1 KR 1020160106210 A KR1020160106210 A KR 1020160106210A KR 20160106210 A KR20160106210 A KR 20160106210A KR 101954410 B1 KR101954410 B1 KR 101954410B1
- Authority
- KR
- South Korea
- Prior art keywords
- antireflection
- substrate
- base substrate
- dry etching
- plasma
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims description 52
- 238000001020 plasma etching Methods 0.000 title claims description 20
- 238000001312 dry etching Methods 0.000 claims abstract description 33
- 239000011147 inorganic material Substances 0.000 claims abstract description 23
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 47
- 230000003667 anti-reflective effect Effects 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 13
- 239000010954 inorganic particle Substances 0.000 claims description 12
- -1 polyethylene naphthalate Polymers 0.000 claims description 11
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 6
- 239000004697 Polyetherimide Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229920002530 polyetherether ketone Polymers 0.000 claims description 6
- 229920001601 polyetherimide Polymers 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004417 polycarbonate Substances 0.000 claims description 5
- 229920000515 polycarbonate Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 150000002222 fluorine compounds Chemical class 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- 239000004695 Polyether sulfone Substances 0.000 claims 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims 2
- 229920006393 polyether sulfone Polymers 0.000 claims 2
- 229910052789 astatine Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000003252 repetitive effect Effects 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 13
- 229920000642 polymer Polymers 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000003014 reinforcing effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 229920001774 Perfluoroether Polymers 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- DAWJJMYZJQJLPZ-UHFFFAOYSA-N 2-sulfanylprop-2-enoic acid Chemical compound OC(=O)C(S)=C DAWJJMYZJQJLPZ-UHFFFAOYSA-N 0.000 description 1
- RWHRFHQRVDUPIK-UHFFFAOYSA-N 50867-57-7 Chemical class CC(=C)C(O)=O.CC(=C)C(O)=O RWHRFHQRVDUPIK-UHFFFAOYSA-N 0.000 description 1
- NQGNXHPPPKEBKL-UHFFFAOYSA-N ClC(=C(F)F)F.C=C.ClC(=C(F)F)F.C=C Chemical group ClC(=C(F)F)F.C=C.ClC(=C(F)F)F.C=C NQGNXHPPPKEBKL-UHFFFAOYSA-N 0.000 description 1
- 229920007925 Ethylene chlorotrifluoroethylene (ECTFE) Polymers 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Sustainable Energy (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20150117742 | 2015-08-21 | ||
KR1020150117742 | 2015-08-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20170023396A KR20170023396A (ko) | 2017-03-03 |
KR101954410B1 true KR101954410B1 (ko) | 2019-03-06 |
Family
ID=58100469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160106210A KR101954410B1 (ko) | 2015-08-21 | 2016-08-22 | 플라즈마 에칭을 이용한 반사방지 표면의 제조방법 및 반사방지 표면이 형성된 기판 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6770576B2 (ja) |
KR (1) | KR101954410B1 (ja) |
CN (1) | CN107949901B (ja) |
WO (1) | WO2017034262A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101965343B1 (ko) * | 2017-11-28 | 2019-04-03 | 와이아이테크(주) | 결정질 태양전지용 플라즈마 텍스처링 방법 |
DE102018109884B4 (de) * | 2018-04-24 | 2023-07-27 | Webasto SE | Sensoranordnung mit Blendenelement und Verfahren zur Herstellung des Blendenelements |
JP2020184002A (ja) * | 2019-05-07 | 2020-11-12 | キヤノン株式会社 | 光学素子の製造方法、光学素子、撮像装置、および光学機器 |
CN112531124B (zh) * | 2019-09-19 | 2024-07-16 | 北京小米移动软件有限公司 | 显示屏和终端 |
CN115806775A (zh) * | 2022-11-16 | 2023-03-17 | 武汉光鹿科技发展有限公司 | 镜片用有色保护膜及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006503332A (ja) | 2002-10-14 | 2006-01-26 | スリーエム イノベイティブ プロパティズ カンパニー | ディスプレイに使用するための反射防止フィルム |
JP2012048239A (ja) * | 2011-08-23 | 2012-03-08 | Dainippon Printing Co Ltd | 反射防止フィルムの製造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0644561B2 (ja) * | 1985-01-29 | 1994-06-08 | 日本電気株式会社 | 微細パタ−ン形成方法 |
JPH11172448A (ja) * | 1997-12-12 | 1999-06-29 | Tadahiro Omi | 光学部品の製造法 |
KR100624308B1 (ko) * | 2004-10-11 | 2006-09-19 | 제일모직주식회사 | 반사방지 필름의 고굴절층 코팅용 조성물 |
US8771532B2 (en) * | 2009-03-31 | 2014-07-08 | Corning Incorporated | Glass having anti-glare surface and method of making |
KR101081499B1 (ko) * | 2009-08-19 | 2011-11-08 | 광주과학기술원 | 무반사 나노구조의 제조방법 |
JP2011150154A (ja) * | 2010-01-22 | 2011-08-04 | Showa Shinku:Kk | 薄膜、及び、薄膜の形成方法 |
ITMI20101529A1 (it) * | 2010-08-09 | 2012-02-10 | Consiglio Nazionale Ricerche | Elementi ottici plastici con caratteristiche antiappannanti e metodo per la loro realizzazione |
KR101235834B1 (ko) * | 2010-12-08 | 2013-02-21 | 한국기계연구원 | 폴리머층을 식각 보호층으로 이용한 돌기 패턴의 형성 방법 |
JP5810577B2 (ja) * | 2011-03-25 | 2015-11-11 | 凸版印刷株式会社 | 低反射構造を成型するための原版の製造方法 |
KR20120114975A (ko) * | 2011-04-08 | 2012-10-17 | 주식회사 엘지화학 | 반사방지 필름 제조용 주형의 제조방법, 및 그 주형을 이용한 반사방지 필름의 제조방법 |
JP5840448B2 (ja) * | 2011-10-12 | 2016-01-06 | 株式会社タムロン | 反射防止膜及び反射防止膜の製造方法 |
KR101244889B1 (ko) * | 2012-03-19 | 2013-03-18 | 한국기계연구원 | 보호층이 구비된 반사 방지 기판 및 그 제조 방법 |
KR101205006B1 (ko) * | 2012-05-03 | 2012-11-27 | 한국기계연구원 | 투명전도성 기판 및 그 제조 방법 |
KR101205004B1 (ko) * | 2012-05-03 | 2012-11-27 | 한국기계연구원 | 투명전도성 기판 및 그 제조 방법 |
US10371416B2 (en) * | 2012-05-04 | 2019-08-06 | The Regents Of The University Of California | Spectrally selective coatings for optical surfaces |
JP6516972B2 (ja) * | 2013-03-29 | 2019-05-22 | 王子ホールディングス株式会社 | 光学部材用の凹凸パターン形成シートの製造方法 |
JP6160186B2 (ja) * | 2013-04-05 | 2017-07-12 | 三菱ケミカル株式会社 | 微細凹凸構造体、加飾シート、および加飾樹脂成形体、並びに微細凹凸構造体、および加飾樹脂成形体の製造方法 |
JP5468167B1 (ja) * | 2013-05-20 | 2014-04-09 | 尾池工業株式会社 | 積層体 |
DE102013106392B4 (de) * | 2013-06-19 | 2017-06-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Entspiegelungsschicht |
KR20140074874A (ko) * | 2014-05-07 | 2014-06-18 | (주)에스이피 | 광투과성 및 내구성이 향상된 반사방지 표면의 제조방법 및 반사방지 표면이 형성된 기판 |
CN104386645B (zh) * | 2014-10-16 | 2017-05-03 | 中国工程物理研究院激光聚变研究中心 | 自掩膜制备随机亚波长宽带减反射微结构的方法 |
-
2016
- 2016-08-22 CN CN201680047856.1A patent/CN107949901B/zh active Active
- 2016-08-22 KR KR1020160106210A patent/KR101954410B1/ko active IP Right Grant
- 2016-08-22 JP JP2018528929A patent/JP6770576B2/ja active Active
- 2016-08-22 WO PCT/KR2016/009245 patent/WO2017034262A1/ko active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006503332A (ja) | 2002-10-14 | 2006-01-26 | スリーエム イノベイティブ プロパティズ カンパニー | ディスプレイに使用するための反射防止フィルム |
JP2012048239A (ja) * | 2011-08-23 | 2012-03-08 | Dainippon Printing Co Ltd | 反射防止フィルムの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20170023396A (ko) | 2017-03-03 |
JP2018525688A (ja) | 2018-09-06 |
CN107949901B (zh) | 2021-08-31 |
WO2017034262A1 (ko) | 2017-03-02 |
CN107949901A (zh) | 2018-04-20 |
JP6770576B2 (ja) | 2020-10-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101954410B1 (ko) | 플라즈마 에칭을 이용한 반사방지 표면의 제조방법 및 반사방지 표면이 형성된 기판 | |
JP6505693B2 (ja) | ナノ構造及びナノ構造化物品の作製方法 | |
Kim et al. | Antireflective, self-cleaning and protective film by continuous sputtering of a plasma polymer on inorganic multilayer for perovskite solar cells application | |
US9459379B2 (en) | Optical member and method for producing same | |
JP6415549B2 (ja) | 反射防止層の製造法 | |
JP2018511943A (ja) | フッ化アニールした膜でコーティングした物品 | |
JP5245094B2 (ja) | ガスバリアフィルム | |
KR101316734B1 (ko) | 소수성 반사방지 기판 및 그 제조방법, 그를 포함하는 태양전지 모듈 | |
JP2011032159A (ja) | 機能性表面の製造方法 | |
US20120097239A1 (en) | Method for roughening substrate surface, method for manufacturing photovoltaic device, and photovoltaic device | |
TW201736292A (zh) | 玻璃片之大量退火 | |
KR20150103244A (ko) | 증기서림 방지 나노구조의 표면 및 이를 함유하는 물품 | |
KR20150043412A (ko) | 배리어 조립체의 제조방법 | |
EP2720285B1 (en) | Method of fabricating patterned substrate | |
WO2018089580A1 (en) | Coated glass articles and processes for producing the same | |
US20230365457A1 (en) | High transparency, high haze nanostructured structures | |
KR101805692B1 (ko) | 초발수 초발유 표면 형성 방법 및 그 제조 물체 | |
TW202028150A (zh) | 抗反射玻璃 | |
Park et al. | Three-dimensional antireflective hemispherical lens covered by nanoholes for enhancement of light transmission | |
KR102297890B1 (ko) | 플라즈마 기반 나노구조물 형성방법 | |
KR101589348B1 (ko) | 나노 패턴 구조체의 제조방법 및 이를 이용한 반사 방지 필름의 제조방법과 제조장치 | |
US11294102B2 (en) | Broadband and omnidirectional polymer antireflection coatings | |
CN117999869A (zh) | 透明导电压电膜、器件以及透明导电压电膜的制造方法 | |
US20140272290A1 (en) | Polymer Anti-glare Coatings and Methods for Forming the Same | |
Chen | Antireflection nanostructures at material interfaces for enhancement of optical properties |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |