CN107949901B - 利用等离子体蚀刻的防反射表面的制造方法及形成防反射表面的基板 - Google Patents

利用等离子体蚀刻的防反射表面的制造方法及形成防反射表面的基板 Download PDF

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CN107949901B
CN107949901B CN201680047856.1A CN201680047856A CN107949901B CN 107949901 B CN107949901 B CN 107949901B CN 201680047856 A CN201680047856 A CN 201680047856A CN 107949901 B CN107949901 B CN 107949901B
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manufacturing
antireflection
plasma etching
substrate
plasma
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CN107949901A (zh
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金炫中
金洪徹
金正来
崔炳景
王弘来
权雅贤
申东贤
李圣徒
罗钟周
权正大
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CEKO Corp Ltd
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Ceko Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Sustainable Energy (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Laminated Bodies (AREA)
  • Drying Of Semiconductors (AREA)
CN201680047856.1A 2015-08-21 2016-08-22 利用等离子体蚀刻的防反射表面的制造方法及形成防反射表面的基板 Active CN107949901B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20150117742 2015-08-21
KR10-2015-0117742 2015-08-21
PCT/KR2016/009245 WO2017034262A1 (ko) 2015-08-21 2016-08-22 플라즈마 에칭을 이용한 반사방지 표면의 제조방법 및 반사방지 표면이 형성된 기판

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CN107949901A CN107949901A (zh) 2018-04-20
CN107949901B true CN107949901B (zh) 2021-08-31

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JP (1) JP6770576B2 (ja)
KR (1) KR101954410B1 (ja)
CN (1) CN107949901B (ja)
WO (1) WO2017034262A1 (ja)

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KR101965343B1 (ko) * 2017-11-28 2019-04-03 와이아이테크(주) 결정질 태양전지용 플라즈마 텍스처링 방법
DE102018109884B4 (de) * 2018-04-24 2023-07-27 Webasto SE Sensoranordnung mit Blendenelement und Verfahren zur Herstellung des Blendenelements
JP2020184002A (ja) * 2019-05-07 2020-11-12 キヤノン株式会社 光学素子の製造方法、光学素子、撮像装置、および光学機器
CN112531124A (zh) * 2019-09-19 2021-03-19 北京小米移动软件有限公司 显示屏和终端
CN115806775A (zh) * 2022-11-16 2023-03-17 武汉光鹿科技发展有限公司 镜片用有色保护膜及其制备方法

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US20100246016A1 (en) * 2009-03-31 2010-09-30 Carlson Krista L Glass having anti-glare surface and method of making
JP2012048239A (ja) * 2011-08-23 2012-03-08 Dainippon Printing Co Ltd 反射防止フィルムの製造方法
JP2012203267A (ja) * 2011-03-25 2012-10-22 Toppan Printing Co Ltd 低反射構造を成型するための原版並びにその製造方法
KR101205006B1 (ko) * 2012-05-03 2012-11-27 한국기계연구원 투명전도성 기판 및 그 제조 방법
KR101244889B1 (ko) * 2012-03-19 2013-03-18 한국기계연구원 보호층이 구비된 반사 방지 기판 및 그 제조 방법
WO2014202375A1 (de) * 2013-06-19 2014-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Verfahren zur herstellung einer entspiegelungsschicht
JP2015003510A (ja) * 2013-05-20 2015-01-08 尾池工業株式会社 積層体

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JPH11172448A (ja) * 1997-12-12 1999-06-29 Tadahiro Omi 光学部品の製造法
US6800378B2 (en) * 1998-02-19 2004-10-05 3M Innovative Properties Company Antireflection films for use with displays
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KR20120114975A (ko) * 2011-04-08 2012-10-17 주식회사 엘지화학 반사방지 필름 제조용 주형의 제조방법, 및 그 주형을 이용한 반사방지 필름의 제조방법
JP5840448B2 (ja) * 2011-10-12 2016-01-06 株式会社タムロン 反射防止膜及び反射防止膜の製造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100246016A1 (en) * 2009-03-31 2010-09-30 Carlson Krista L Glass having anti-glare surface and method of making
JP2012203267A (ja) * 2011-03-25 2012-10-22 Toppan Printing Co Ltd 低反射構造を成型するための原版並びにその製造方法
JP2012048239A (ja) * 2011-08-23 2012-03-08 Dainippon Printing Co Ltd 反射防止フィルムの製造方法
KR101244889B1 (ko) * 2012-03-19 2013-03-18 한국기계연구원 보호층이 구비된 반사 방지 기판 및 그 제조 방법
KR101205006B1 (ko) * 2012-05-03 2012-11-27 한국기계연구원 투명전도성 기판 및 그 제조 방법
JP2015003510A (ja) * 2013-05-20 2015-01-08 尾池工業株式会社 積層体
WO2014202375A1 (de) * 2013-06-19 2014-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Verfahren zur herstellung einer entspiegelungsschicht

Also Published As

Publication number Publication date
KR101954410B1 (ko) 2019-03-06
WO2017034262A1 (ko) 2017-03-02
CN107949901A (zh) 2018-04-20
JP2018525688A (ja) 2018-09-06
KR20170023396A (ko) 2017-03-03
JP6770576B2 (ja) 2020-10-14

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