KR101952990B1 - 평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법 - Google Patents

평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법 Download PDF

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Publication number
KR101952990B1
KR101952990B1 KR1020150116433A KR20150116433A KR101952990B1 KR 101952990 B1 KR101952990 B1 KR 101952990B1 KR 1020150116433 A KR1020150116433 A KR 1020150116433A KR 20150116433 A KR20150116433 A KR 20150116433A KR 101952990 B1 KR101952990 B1 KR 101952990B1
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KR
South Korea
Prior art keywords
pattern
exposure apparatus
performance
substrate
evaluating
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Expired - Fee Related
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KR1020150116433A
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English (en)
Korean (ko)
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KR20160025457A (ko
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미와코 안도
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캐논 가부시끼가이샤
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Publication of KR20160025457A publication Critical patent/KR20160025457A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020150116433A 2014-08-27 2015-08-19 평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법 Expired - Fee Related KR101952990B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-173007 2014-08-27
JP2014173007A JP6415186B2 (ja) 2014-08-27 2014-08-27 評価用マスク、評価方法、露光装置及び物品の製造方法

Publications (2)

Publication Number Publication Date
KR20160025457A KR20160025457A (ko) 2016-03-08
KR101952990B1 true KR101952990B1 (ko) 2019-02-27

Family

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Family Applications (1)

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KR1020150116433A Expired - Fee Related KR101952990B1 (ko) 2014-08-27 2015-08-19 평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법

Country Status (4)

Country Link
JP (1) JP6415186B2 (enExample)
KR (1) KR101952990B1 (enExample)
CN (1) CN105388699B (enExample)
TW (1) TWI597562B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102713425B1 (ko) * 2016-08-31 2024-10-04 에스케이하이닉스 주식회사 노광 공정의 디스토션 제어방법
CN117406546B (zh) * 2023-12-14 2024-04-12 合肥晶合集成电路股份有限公司 一种掩模版及其图形修正方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007591A (ja) * 2001-06-21 2003-01-10 Nikon Corp 荷電粒子線光学系の収差評価方法、荷電粒子線装置調整方法、荷電粒子線露光方法、非点収差評価方法及び評価用パターン
JP2003142367A (ja) * 2001-10-31 2003-05-16 Sony Corp 評価用マスク及びマスク評価方法
KR100781099B1 (ko) * 2000-04-25 2007-11-30 가부시키가이샤 니콘 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치
JP2012047937A (ja) * 2010-08-26 2012-03-08 Nsk Technology Co Ltd 露光評価用マスクおよび露光評価方法
JP2012078552A (ja) * 2010-10-01 2012-04-19 Toppan Printing Co Ltd フォトマスク作製方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318083A (ja) * 2002-04-22 2003-11-07 Nikon Corp 光学特性計測方法、光学系の調整方法、露光方法及び装置、並びにデバイス製造方法
JP4051240B2 (ja) * 2002-07-31 2008-02-20 富士通株式会社 試験用フォトマスク、フレア評価方法、及びフレア補正方法
JP4005870B2 (ja) * 2002-08-02 2007-11-14 株式会社東芝 マスク、マスクの作成方法、および半導体装置の製造方法
JP5164409B2 (ja) * 2006-09-28 2013-03-21 富士フイルム株式会社 光硬化性組成物、カラーフィルター及びその製造方法、並びに、固体撮像素子
DE102008019341B4 (de) * 2008-04-15 2020-09-24 Carl Zeiss Smt Gmbh Verfahren zur Analyse von Masken für die Photolithographie
JP5497693B2 (ja) * 2011-06-10 2014-05-21 Ｈｏｙａ株式会社 フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100781099B1 (ko) * 2000-04-25 2007-11-30 가부시키가이샤 니콘 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치
JP2003007591A (ja) * 2001-06-21 2003-01-10 Nikon Corp 荷電粒子線光学系の収差評価方法、荷電粒子線装置調整方法、荷電粒子線露光方法、非点収差評価方法及び評価用パターン
JP2003142367A (ja) * 2001-10-31 2003-05-16 Sony Corp 評価用マスク及びマスク評価方法
JP2012047937A (ja) * 2010-08-26 2012-03-08 Nsk Technology Co Ltd 露光評価用マスクおよび露光評価方法
JP2012078552A (ja) * 2010-10-01 2012-04-19 Toppan Printing Co Ltd フォトマスク作製方法

Also Published As

Publication number Publication date
TW201608330A (zh) 2016-03-01
KR20160025457A (ko) 2016-03-08
TWI597562B (zh) 2017-09-01
CN105388699A (zh) 2016-03-09
JP6415186B2 (ja) 2018-10-31
CN105388699B (zh) 2019-11-01
JP2016048299A (ja) 2016-04-07

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