JP6415186B2 - 評価用マスク、評価方法、露光装置及び物品の製造方法 - Google Patents

評価用マスク、評価方法、露光装置及び物品の製造方法 Download PDF

Info

Publication number
JP6415186B2
JP6415186B2 JP2014173007A JP2014173007A JP6415186B2 JP 6415186 B2 JP6415186 B2 JP 6415186B2 JP 2014173007 A JP2014173007 A JP 2014173007A JP 2014173007 A JP2014173007 A JP 2014173007A JP 6415186 B2 JP6415186 B2 JP 6415186B2
Authority
JP
Japan
Prior art keywords
pattern
exposure apparatus
performance
substrate
evaluation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014173007A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016048299A5 (enExample
JP2016048299A (ja
Inventor
美和子 安藤
美和子 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014173007A priority Critical patent/JP6415186B2/ja
Priority to TW104119998A priority patent/TWI597562B/zh
Priority to KR1020150116433A priority patent/KR101952990B1/ko
Priority to CN201510522421.5A priority patent/CN105388699B/zh
Publication of JP2016048299A publication Critical patent/JP2016048299A/ja
Publication of JP2016048299A5 publication Critical patent/JP2016048299A5/ja
Application granted granted Critical
Publication of JP6415186B2 publication Critical patent/JP6415186B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2014173007A 2014-08-27 2014-08-27 評価用マスク、評価方法、露光装置及び物品の製造方法 Active JP6415186B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014173007A JP6415186B2 (ja) 2014-08-27 2014-08-27 評価用マスク、評価方法、露光装置及び物品の製造方法
TW104119998A TWI597562B (zh) 2014-08-27 2015-06-22 Evaluation mask, evaluation method, exposure apparatus, and method of manufacturing an article processed from a substrate
KR1020150116433A KR101952990B1 (ko) 2014-08-27 2015-08-19 평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법
CN201510522421.5A CN105388699B (zh) 2014-08-27 2015-08-24 评价用掩模、评价方法、曝光装置以及物品的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014173007A JP6415186B2 (ja) 2014-08-27 2014-08-27 評価用マスク、評価方法、露光装置及び物品の製造方法

Publications (3)

Publication Number Publication Date
JP2016048299A JP2016048299A (ja) 2016-04-07
JP2016048299A5 JP2016048299A5 (enExample) 2017-09-14
JP6415186B2 true JP6415186B2 (ja) 2018-10-31

Family

ID=55421123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014173007A Active JP6415186B2 (ja) 2014-08-27 2014-08-27 評価用マスク、評価方法、露光装置及び物品の製造方法

Country Status (4)

Country Link
JP (1) JP6415186B2 (enExample)
KR (1) KR101952990B1 (enExample)
CN (1) CN105388699B (enExample)
TW (1) TWI597562B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102713425B1 (ko) * 2016-08-31 2024-10-04 에스케이하이닉스 주식회사 노광 공정의 디스토션 제어방법
CN117406546B (zh) * 2023-12-14 2024-04-12 合肥晶合集成电路股份有限公司 一种掩模版及其图形修正方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002015992A (ja) * 2000-04-25 2002-01-18 Nikon Corp リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法
JP2003007591A (ja) * 2001-06-21 2003-01-10 Nikon Corp 荷電粒子線光学系の収差評価方法、荷電粒子線装置調整方法、荷電粒子線露光方法、非点収差評価方法及び評価用パターン
JP2003142367A (ja) * 2001-10-31 2003-05-16 Sony Corp 評価用マスク及びマスク評価方法
JP2003318083A (ja) * 2002-04-22 2003-11-07 Nikon Corp 光学特性計測方法、光学系の調整方法、露光方法及び装置、並びにデバイス製造方法
JP4051240B2 (ja) * 2002-07-31 2008-02-20 富士通株式会社 試験用フォトマスク、フレア評価方法、及びフレア補正方法
JP4005870B2 (ja) * 2002-08-02 2007-11-14 株式会社東芝 マスク、マスクの作成方法、および半導体装置の製造方法
JP5164409B2 (ja) * 2006-09-28 2013-03-21 富士フイルム株式会社 光硬化性組成物、カラーフィルター及びその製造方法、並びに、固体撮像素子
DE102008019341B4 (de) * 2008-04-15 2020-09-24 Carl Zeiss Smt Gmbh Verfahren zur Analyse von Masken für die Photolithographie
JP2012047937A (ja) * 2010-08-26 2012-03-08 Nsk Technology Co Ltd 露光評価用マスクおよび露光評価方法
JP2012078552A (ja) * 2010-10-01 2012-04-19 Toppan Printing Co Ltd フォトマスク作製方法
JP5497693B2 (ja) * 2011-06-10 2014-05-21 Ｈｏｙａ株式会社 フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法

Also Published As

Publication number Publication date
TW201608330A (zh) 2016-03-01
KR101952990B1 (ko) 2019-02-27
KR20160025457A (ko) 2016-03-08
TWI597562B (zh) 2017-09-01
CN105388699A (zh) 2016-03-09
CN105388699B (zh) 2019-11-01
JP2016048299A (ja) 2016-04-07

Similar Documents

Publication Publication Date Title
KR100714480B1 (ko) 포토마스크의 테스트 패턴 이미지로부터 인쇄된 테스트피쳐들을 이용하는 포토리소그래피 공정에 있어서 초점변화를 측정하는 시스템 및 방법
JP4296943B2 (ja) 露光用マスクの製造方法および露光方法ならびに３次元形状の製造方法
JP5127875B2 (ja) リソグラフィ装置及び物品の製造方法
US10573531B2 (en) Method of manufacturing semiconductor device
CN114326290A (zh) 光学邻近修正方法
JP2024049249A (ja) 原版、情報処理装置、リソグラフィ装置及び物品の製造方法
CN100514184C (zh) 光掩模
JP6415186B2 (ja) 評価用マスク、評価方法、露光装置及び物品の製造方法
JP2012019110A (ja) 露光装置及びデバイスの製造方法
JP2004251969A (ja) 位相シフトマスク、位相シフトマスクを用いたパターンの形成方法および電子デバイスの製造方法
US7393613B2 (en) Set of at least two masks for the projection of structure patterns
JP2009032747A (ja) 露光装置及びデバイス製造方法
JP6813777B2 (ja) フォトマスク及び電子装置の製造方法
KR102130481B1 (ko) 노광 장치, 노광 방법, 및 물품의 제조 방법
JP2009043933A (ja) 露光装置、調整方法、露光方法及びデバイス製造方法
CN113050367A (zh) 光学邻近效应修正方法和系统、掩膜版及其制备方法
JPH10275769A (ja) 露光方法
JP3984866B2 (ja) 露光方法
JP3977096B2 (ja) マスク、露光方法及びデバイス製造方法
JP2011257614A (ja) フォトマスク、フォトマスクの再加工方法、及びレジストパターンの形成方法
JP2004006783A (ja) 投影光学系、露光装置、露光方法及びマイクロデバイスの製造方法
JP5311326B2 (ja) フォトマスク、パターンの形成方法および電子デバイスの製造方法
JP2001223155A (ja) フォトリソグラフィ方法
KR100644049B1 (ko) 노광 장치용 레티클 및 이를 이용한 비점수차 보정 방법
KR100791680B1 (ko) 스테퍼의 노광 방법

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170802

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170802

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180420

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180418

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180614

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180903

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20181002

R151 Written notification of patent or utility model registration

Ref document number: 6415186

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151