TWI597562B - Evaluation mask, evaluation method, exposure apparatus, and method of manufacturing an article processed from a substrate - Google Patents

Evaluation mask, evaluation method, exposure apparatus, and method of manufacturing an article processed from a substrate Download PDF

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Publication number
TWI597562B
TWI597562B TW104119998A TW104119998A TWI597562B TW I597562 B TWI597562 B TW I597562B TW 104119998 A TW104119998 A TW 104119998A TW 104119998 A TW104119998 A TW 104119998A TW I597562 B TWI597562 B TW I597562B
Authority
TW
Taiwan
Prior art keywords
pattern
substrate
mask
exposure apparatus
evaluation
Prior art date
Application number
TW104119998A
Other languages
English (en)
Chinese (zh)
Other versions
TW201608330A (zh
Inventor
Miwako Ando
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW201608330A publication Critical patent/TW201608330A/zh
Application granted granted Critical
Publication of TWI597562B publication Critical patent/TWI597562B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW104119998A 2014-08-27 2015-06-22 Evaluation mask, evaluation method, exposure apparatus, and method of manufacturing an article processed from a substrate TWI597562B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014173007A JP6415186B2 (ja) 2014-08-27 2014-08-27 評価用マスク、評価方法、露光装置及び物品の製造方法

Publications (2)

Publication Number Publication Date
TW201608330A TW201608330A (zh) 2016-03-01
TWI597562B true TWI597562B (zh) 2017-09-01

Family

ID=55421123

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104119998A TWI597562B (zh) 2014-08-27 2015-06-22 Evaluation mask, evaluation method, exposure apparatus, and method of manufacturing an article processed from a substrate

Country Status (4)

Country Link
JP (1) JP6415186B2 (enExample)
KR (1) KR101952990B1 (enExample)
CN (1) CN105388699B (enExample)
TW (1) TWI597562B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102713425B1 (ko) * 2016-08-31 2024-10-04 에스케이하이닉스 주식회사 노광 공정의 디스토션 제어방법
CN117406546B (zh) * 2023-12-14 2024-04-12 合肥晶合集成电路股份有限公司 一种掩模版及其图形修正方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002015992A (ja) * 2000-04-25 2002-01-18 Nikon Corp リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法
JP2003007591A (ja) * 2001-06-21 2003-01-10 Nikon Corp 荷電粒子線光学系の収差評価方法、荷電粒子線装置調整方法、荷電粒子線露光方法、非点収差評価方法及び評価用パターン
JP2003142367A (ja) * 2001-10-31 2003-05-16 Sony Corp 評価用マスク及びマスク評価方法
JP2003318083A (ja) * 2002-04-22 2003-11-07 Nikon Corp 光学特性計測方法、光学系の調整方法、露光方法及び装置、並びにデバイス製造方法
JP4051240B2 (ja) * 2002-07-31 2008-02-20 富士通株式会社 試験用フォトマスク、フレア評価方法、及びフレア補正方法
JP4005870B2 (ja) * 2002-08-02 2007-11-14 株式会社東芝 マスク、マスクの作成方法、および半導体装置の製造方法
JP5164409B2 (ja) * 2006-09-28 2013-03-21 富士フイルム株式会社 光硬化性組成物、カラーフィルター及びその製造方法、並びに、固体撮像素子
DE102008019341B4 (de) * 2008-04-15 2020-09-24 Carl Zeiss Smt Gmbh Verfahren zur Analyse von Masken für die Photolithographie
JP2012047937A (ja) * 2010-08-26 2012-03-08 Nsk Technology Co Ltd 露光評価用マスクおよび露光評価方法
JP2012078552A (ja) * 2010-10-01 2012-04-19 Toppan Printing Co Ltd フォトマスク作製方法
JP5497693B2 (ja) * 2011-06-10 2014-05-21 Hoya株式会社 フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法

Also Published As

Publication number Publication date
JP2016048299A (ja) 2016-04-07
KR20160025457A (ko) 2016-03-08
KR101952990B1 (ko) 2019-02-27
CN105388699B (zh) 2019-11-01
TW201608330A (zh) 2016-03-01
CN105388699A (zh) 2016-03-09
JP6415186B2 (ja) 2018-10-31

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