TWI597562B - Evaluation mask, evaluation method, exposure apparatus, and method of manufacturing an article processed from a substrate - Google Patents
Evaluation mask, evaluation method, exposure apparatus, and method of manufacturing an article processed from a substrate Download PDFInfo
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- TWI597562B TWI597562B TW104119998A TW104119998A TWI597562B TW I597562 B TWI597562 B TW I597562B TW 104119998 A TW104119998 A TW 104119998A TW 104119998 A TW104119998 A TW 104119998A TW I597562 B TWI597562 B TW I597562B
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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Description
本發明係關於在評估曝光裝置的性能時使用的評估用遮罩、評估方法、曝光裝置以及物品之製造方法。 The present invention relates to an evaluation mask, an evaluation method, an exposure apparatus, and a method of manufacturing an article used in evaluating the performance of an exposure apparatus.
曝光裝置將遮罩(mask)或者光罩(reticle)的圖案經由投影光學系統投影(成像)到塗布了抗蝕劑等感光劑的基板(半導體晶圓、玻璃板)而將圖案轉印到基板上。近年來,掃描型的曝光裝置、所謂步進掃描方式的曝光裝置成為主流,該掃描型的曝光裝置對遮罩的一部分的區域進行照明,針對投影光學系統,對遮罩和基板進行掃描而使基板曝光。 The exposure device transfers (images) a pattern of a mask or a reticle to a substrate (semiconductor wafer, glass plate) coated with a sensitizer such as a resist through a projection optical system to transfer the pattern to the substrate. on. In recent years, a scanning type exposure apparatus and an exposure apparatus of a step-and-scan type have been mainly used. The scanning type exposure apparatus illuminates a part of the area of the mask, and scans the mask and the substrate with respect to the projection optical system. The substrate is exposed.
近年來,伴隨著設備的微小化,要求曝光裝置的高性能化,所以需要使用評估用遮罩來以高的精度評估曝光裝置的性能。在上述評估用遮罩中,例如,要求用於評估曝光裝置的成像性能的功能、用於評估曝光裝置上的投影光學系統的成像性能的功能、用於調整供掃描曝光用的驅動系統的功能等。尤其,用於液晶曝光裝置的評估用遮罩大 型且昂貴,所以要求具有多種功能。此處,曝光裝置的成像性能包括焦點、線寬(CD:Critical Dimension)、失真、重疊(overlay)等。投影光學系統的成像性能包括投影光學系統的有效區域內的焦點(像面、像散、散光(astigmatism))、失真等。另外,用於掃描曝光的驅動系統的調整包括:保持遮罩並移動的遮罩台、保持基板並移動的基板台的調整;對遮罩上的不曝光的部分進行遮光的遮光片(masking blade)的位置的調整等。 In recent years, with the miniaturization of equipment, high performance of an exposure apparatus is required. Therefore, it is necessary to use an evaluation mask to evaluate the performance of an exposure apparatus with high precision. In the above-described evaluation mask, for example, a function for evaluating the imaging performance of the exposure device, a function for evaluating the imaging performance of the projection optical system on the exposure device, and a function for adjusting the driving system for scanning exposure are required. Wait. In particular, the evaluation mask for the liquid crystal exposure apparatus is large It is expensive and expensive, so it requires multiple functions. Here, the imaging performance of the exposure device includes a focus, a line width (CD: Critical Dimension), a distortion, an overlay, and the like. The imaging performance of the projection optical system includes a focus (image plane, astigmatism, astigmatism), distortion, and the like in an effective area of the projection optical system. In addition, the adjustment of the driving system for scanning exposure includes: a mask table that holds the mask and moves, an adjustment of the substrate table that holds the substrate and moves, and a masking film that shields the unexposed portion of the mask from the masking blade. ) The adjustment of the position, etc.
在這樣的評估用遮罩中,也要求提高上述功能的精度。尤其,投影光學系統的有效區域隨著成像性能的高精細化而變窄,要以與以往相同的解析度評估有效區域內的成像性能,例如需要以比以往更細的間距配置用於評估失真的圖案。 In such an evaluation mask, it is also required to improve the accuracy of the above functions. In particular, the effective area of the projection optical system is narrowed as the imaging performance is highly refined, and the imaging performance in the effective area is evaluated with the same resolution as in the past, for example, it is required to be configured with a finer pitch than usual to evaluate the distortion. picture of.
在評估曝光裝置、投影光學系統的成像性能時,經由評估用遮罩而使塗布了抗蝕劑的基板曝光,使上述基板顯影,用測量裝置測量與評估用遮罩的圖案對應的抗蝕劑像。評估用遮罩,係為了防止受到來自用於評估曝光裝置、投影光學系統的成像性能的光透射型圖案以外的區域的光的影響,光透射型圖案以外的區域係設為遮光部。其中,在評估用遮罩方面,一般,配置有複數種類的圖案,光透射型圖案和上述圖案的周圍的遮光部的比例(以下稱為「開口率」)因基板上的區域而異。此處,例如,思考將被照射了光的部分的抗蝕劑被去除的正抗蝕劑用於評估的情形。在該情況下,在使曝光了的基板上的正抗蝕劑顯 影時,開口率高的區域相比於開口率低的區域,顯影的區域更寬,更多的正抗蝕劑溶解到顯影液,所以該區域的顯影液的顯影力局部地降低。在這樣的情況下,抗蝕劑像受到部分的顯影力的降低所致的影響(例如CD的變化等),所以無法正確地評估曝光裝置的性能。因此,在使基板顯影的顯影裝置側的應對方面,在日本特開2006-319350號公報中提出了抑制顯影液的顯影力降低的技術。 When evaluating the imaging performance of the exposure apparatus and the projection optical system, the substrate coated with the resist is exposed through the mask for evaluation, the substrate is developed, and the resist corresponding to the pattern of the mask for evaluation is measured by the measuring device. image. The mask for evaluation is a light-shielding portion in order to prevent the influence of light from a region other than the light-transmitting pattern for evaluating the imaging performance of the exposure device or the projection optical system. In the evaluation mask, generally, a plurality of patterns are arranged, and the ratio of the light-transmitting pattern and the light-shielding portion around the pattern (hereinafter referred to as "opening ratio") varies depending on the area on the substrate. Here, for example, a case where a positive resist from which a resist to be irradiated with light is removed is used for evaluation. In this case, the positive resist on the exposed substrate is displayed In the case of shadowing, the region where the aperture ratio is high is wider than the region where the aperture ratio is low, and more of the positive resist is dissolved in the developer, so that the developing power of the developer in this region is locally lowered. In such a case, the resist image is affected by a decrease in the developing power of the portion (for example, a change in CD, etc.), so that the performance of the exposure device cannot be accurately evaluated. For this reason, a technique for suppressing a decrease in the developing power of the developer is proposed in Japanese Laid-Open Patent Publication No. 2006-319350.
但是,在曝光裝置的設置時作為檢查來進行曝光裝置、投影光學系統的成像性能的評估,但顯影裝置因曝光裝置的設置目的地而異,有時必須使用未進行專利文獻1那樣的應對的顯影裝置。 However, the imaging performance of the exposure apparatus and the projection optical system is evaluated as an inspection at the time of installation of the exposure apparatus. However, the development apparatus differs depending on the installation destination of the exposure apparatus, and it is necessary to use a response that is not performed in Patent Document 1. Developing device.
另外,還考慮如下技術:考慮顯影力的降低所致的影響來設計(製造)評估用遮罩。但是,顯影力的降低所致的影響因顯影裝置的調整狀態而異,所以必須在曝光裝置的設置時確認該影響來製造評估用遮罩,所以並不實際。 In addition, a technique is also considered in which a mask for evaluation is designed (manufactured) in consideration of the influence of the reduction in developing power. However, since the influence of the reduction of the developing power varies depending on the adjustment state of the developing device, it is necessary to confirm the influence at the time of installation of the exposure device to manufacture the mask for evaluation, which is not practical.
本發明提供有利於以高的精度評估曝光裝置的性能的評估用遮罩。 The present invention provides a mask for evaluation which is advantageous for evaluating the performance of an exposure apparatus with high precision.
作為本發明的第1方面的評估用遮罩是在評估使基板曝光的曝光裝置的性能時使用,特徵在於:具有:第1圖案及第2圖案,用於評估前述曝光裝置的第1性能;以及虛設圖案,用於使包含前述第1圖案的第1部分區域中的 每單位面積的開口部和遮光部的第1比例、與包含前述第2圖案的第2部分區域中的每單位面積的開口部和遮光部的第2比例的差分成為±10%以內。 The evaluation mask according to the first aspect of the present invention is used when evaluating the performance of an exposure apparatus for exposing a substrate, and has a first pattern and a second pattern for evaluating the first performance of the exposure apparatus; And a dummy pattern for causing the first partial region including the first pattern The difference between the first ratio of the opening portion and the light shielding portion per unit area and the second ratio of the opening portion per unit area and the light shielding portion in the second partial region including the second pattern is within ±10%.
通過以下參照附圖而說明的優選的實施形態,本發明的進一步的目的或者其他方面將更加明確。 Further objects or other aspects of the present invention will become more apparent from the preferred embodiments described herein.
1‧‧‧遮罩 1‧‧‧ mask
2‧‧‧遮罩台 2‧‧‧ masking table
3‧‧‧照明光學系統 3‧‧‧Lighting optical system
4‧‧‧投影光學系統 4‧‧‧Projection optical system
5‧‧‧基板 5‧‧‧Substrate
6‧‧‧基板台 6‧‧‧ substrate table
7‧‧‧控制部 7‧‧‧Control Department
10‧‧‧評估用遮罩 10‧‧‧Evaluation mask
11‧‧‧圖案 11‧‧‧ pattern
11a‧‧‧部分區域 11a‧‧‧Partial areas
12‧‧‧圖案 12‧‧‧ pattern
12a‧‧‧部分區域 12a‧‧‧Partial areas
13~15‧‧‧圖案 13~15‧‧‧ pattern
15a‧‧‧部分區域 15a‧‧‧Partial areas
16~19‧‧‧圖案 16~19‧‧‧ pattern
19a‧‧‧部分區域 19a‧‧‧Partial areas
20‧‧‧圖案 20‧‧‧ patterns
21‧‧‧虛設圖案 21‧‧‧Dummy design
22‧‧‧虛設圖案 22‧‧‧Dummy design
100‧‧‧曝光裝置 100‧‧‧Exposure device
圖1是示出作為本發明的一個方面的曝光裝置的構成的示意圖。 1 is a schematic view showing the configuration of an exposure apparatus as one aspect of the present invention.
圖2是示出作為評估用遮罩的比較例的構成的示意圖。 FIG. 2 is a schematic view showing a configuration of a comparative example as a mask for evaluation.
圖3是示出與圖2所示的評估用遮罩的第1圖案對應的抗蝕劑像的線寬差的一個例子的圖。 3 is a view showing an example of a line width difference of a resist image corresponding to the first pattern of the evaluation mask shown in FIG. 2 .
圖4是示出本實施形態中的評估用遮罩的構成的示意圖。 Fig. 4 is a schematic view showing the configuration of a mask for evaluation in the present embodiment.
圖5A至圖5C是示出包含圖4所示的評估用遮罩的圖案的部分區域的放大圖。 5A to 5C are enlarged views showing a partial region including a pattern of the evaluation mask shown in Fig. 4.
以下,參照附圖,說明本發明的優選的實施形態。另外,在各圖中,對同一構材附加同一參照號碼,省略重複的說明。 Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference numerals, and the description thereof will not be repeated.
圖1是示出作為本發明的一個方面的曝光裝置100的構成的示意圖。曝光裝置100是將遮罩的圖案轉印到基板 的光刻裝置,亦即使基板曝光的光刻裝置。曝光裝置100具有:遮罩台2、照明光學系統3、投影光學系統4、基板台6以及控制部7。 FIG. 1 is a schematic view showing the configuration of an exposure apparatus 100 as an aspect of the present invention. The exposure device 100 transfers the pattern of the mask to the substrate The lithographic apparatus is also a lithographic apparatus that exposes the substrate even. The exposure apparatus 100 includes a mask stage 2, an illumination optical system 3, a projection optical system 4, a substrate stage 6, and a control unit 7.
遮罩台2可交換地保持具有應轉印到基板5的圖案的遮罩1、和用於評估曝光裝置100的性能的評估用遮罩10。照明光學系統3對保持在遮罩台2的遮罩1、評估用遮罩10進行照明。投影光學系統4將透過照明光學系統3而照明的遮罩1、評估用遮罩10的圖案投影到基板5。基板台6就基板5作保持。控制部7包含CPU、記憶體等,控制曝光裝置100的整體(曝光裝置100的各部)。控制部7控制例如使基板5曝光的處理、評估曝光裝置100的性能的處理、調整曝光裝置100的性能的處理等。 The mask table 2 exchangeably holds a mask 1 having a pattern to be transferred to the substrate 5, and an evaluation mask 10 for evaluating the performance of the exposure apparatus 100. The illumination optical system 3 illuminates the mask 1 and the evaluation mask 10 held by the mask stage 2. The projection optical system 4 projects the mask 1 and the pattern of the evaluation mask 10 that are illuminated by the illumination optical system 3 onto the substrate 5. The substrate stage 6 holds the substrate 5. The control unit 7 includes a CPU, a memory, and the like, and controls the entire exposure apparatus 100 (each unit of the exposure apparatus 100). The control unit 7 controls, for example, a process of exposing the substrate 5, a process of evaluating the performance of the exposure apparatus 100, a process of adjusting the performance of the exposure apparatus 100, and the like.
遮罩1和基板5隔著投影光學系統4而配置於光學上大致共軛的位置。照明光學系統3以均勻的照度分佈在遮罩1上形成圓弧形狀或者梯形形狀的曝光區域。來自遮罩1的圖案的光經由投影光學系統4而在保持在基板台6的基板5上成像。此時,相對投影光學系統4的光軸而驅動遮罩台2以及基板台6雙方,使得可使比由照明光學系統3形成的曝光區域寬的區域曝光。 The mask 1 and the substrate 5 are disposed at positions substantially optically conjugated with the projection optical system 4 interposed therebetween. The illumination optical system 3 is distributed on the mask 1 with a uniform illuminance to form an exposed area of an arc shape or a trapezoidal shape. Light from the pattern of the mask 1 is imaged on the substrate 5 held on the substrate stage 6 via the projection optical system 4. At this time, both the mask stage 2 and the substrate stage 6 are driven with respect to the optical axis of the projection optical system 4, so that an area wider than the exposure area formed by the illumination optical system 3 can be exposed.
此處,參照圖2,說明關於作為評估用遮罩10的比較例的構成。在圖2中,為了簡化,僅示出了說明所需要的圖案。圖2所示的評估用遮罩10包含:用於評估曝光裝置100的第1性能的圖案(要素)11至19、以及用於評估與曝光裝置100的第1性能不同的第2性能的圖案 20。另外,具體而言,第1性能包括線寬(CD:Critical Dimension)以及焦點中的至少一方,第2性能包括投影光學系統4的失真。 Here, a configuration of a comparative example as the mask 10 for evaluation will be described with reference to FIG. 2 . In Fig. 2, for the sake of simplicity, only the patterns required for the description are shown. The evaluation mask 10 shown in FIG. 2 includes patterns (elements) 11 to 19 for evaluating the first performance of the exposure apparatus 100, and patterns for evaluating the second performance different from the first performance of the exposure apparatus 100. 20. Further, specifically, the first performance includes at least one of a line width (CD: Critical Dimension) and a focus, and the second performance includes distortion of the projection optical system 4.
圖案11至19分別由例如所謂線和間隔(line and space)圖案構成。但是,在圖2中,進行簡化而用圓形的開口示出。為了覆蓋曝光裝置100的最大的曝光區域,圖案11至19配置於包括評估用遮罩10的中心以及周邊的整體。另外,圖案20由例如排列了複數個十字形狀的開口的圖案構成。但是,在圖2中,進行簡化而用矩形的開口示出。在覆蓋投影光學系統4的有效區域的程度的大小的區域內,圖案20配置在圖案14、15以及16的周圍。曝光裝置100是掃描型的曝光裝置,所以投影光學系統4的有效區域比曝光裝置100的最大的曝光區域窄。在長度方向(y方向)上錯開地配置圖案11、12和13、圖案14、15和16、以及圖案17、18和19。曝光裝置100在y方向上掃描評估用遮罩10,同時依次進行曝光。在評估曝光裝置100的性能時,圖案11至19和圖案20作為使來自照明光學系統3的光透射(通過)的開口部(光透射部)發揮功能。另外,在比較例中,為了防止在評估曝光裝置100的性能時受到來自用於評估曝光裝置100的性能的圖案以外的區域的光的影響,將用於評估曝光裝置100的性能的圖案以外的區域設為遮光部。 The patterns 11 to 19 are respectively constituted by, for example, a so-called line and space pattern. However, in Fig. 2, simplification is shown and shown by a circular opening. In order to cover the maximum exposure area of the exposure apparatus 100, the patterns 11 to 19 are disposed in the entirety including the center and the periphery of the evaluation mask 10. Further, the pattern 20 is composed of, for example, a pattern in which a plurality of openings of a cross shape are arranged. However, in Fig. 2, simplification is shown and shown by a rectangular opening. The pattern 20 is disposed around the patterns 14, 15, and 16 in a region that covers the extent of the effective area of the projection optical system 4. Since the exposure device 100 is a scanning type exposure device, the effective area of the projection optical system 4 is narrower than the maximum exposure area of the exposure device 100. The patterns 11, 12 and 13, the patterns 14, 15, and 16, and the patterns 17, 18, and 19 are arranged staggered in the longitudinal direction (y direction). The exposure device 100 scans the evaluation mask 10 in the y direction while sequentially performing exposure. When evaluating the performance of the exposure apparatus 100, the patterns 11 to 19 and the pattern 20 function as an opening (light transmitting portion) that transmits (passes) light from the illumination optical system 3. Further, in the comparative example, in order to prevent the influence of light from a region other than the pattern for evaluating the performance of the exposure device 100 from being evaluated when evaluating the performance of the exposure device 100, a pattern other than the pattern for evaluating the performance of the exposure device 100 will be employed. The area is set to the shade.
在圖2所示的評估用遮罩10中,在圖案11至19之間,圖案11至19各自的周圍,即包含圖案11至19的各 者的部分區域內的開口部和遮光部的比例(開口率)不同。例如,包含圖案15(第1圖案)的部分區域15a還包含圖案20(第3圖案),所以開口部的比例高(即開口率高)。另一方面,包含圖案12(第2圖案)的部分區域12a不包含圖案20,所以開口部的比例低(即開口率低)。 In the evaluation mask 10 shown in FIG. 2, between the patterns 11 to 19, the respective circumferences of the patterns 11 to 19, that is, the respective patterns 11 to 19 are included. The ratio (opening ratio) of the opening portion and the light shielding portion in the partial region is different. For example, since the partial region 15a including the pattern 15 (first pattern) further includes the pattern 20 (third pattern), the ratio of the opening portion is high (that is, the aperture ratio is high). On the other hand, since the partial region 12a including the pattern 12 (second pattern) does not include the pattern 20, the ratio of the opening portion is low (that is, the aperture ratio is low).
在評估曝光裝置100的性能時,經由評估用遮罩10,例如,使塗布了正抗蝕劑的評估用的基板曝光,並使上述基板顯影。此時,開口率高的部分區域15a相比於開口率低的部分區域12a,顯影的區域更寬,更多的正抗蝕劑溶解到顯影液,所以開口率高的部分區域的顯影液的顯影力局部地降低。因此,在圖案11至19是殘留圖案(用評估用遮罩10中的遮光部評估的圖案)的情況下,與圖案15對應的抗蝕劑像的線寬比與圖案12對應的抗蝕劑像的線寬粗。另外,在圖案11至19是去掉圖案(用評估用遮罩10中的開口部評估的圖案)的情況下,與圖案15對應的抗蝕劑像的線寬比與圖案12對應的抗蝕劑像的線寬細。另外,在負抗蝕劑的情況下,曝光了的部分在顯影中殘留,所以在使塗布了負抗蝕劑的評估用的基板曝光並使上述基板顯影時,開口率低的部分區域的顯影液的顯影力局部地降低。以下,說明關於正抗蝕劑的情況。 When evaluating the performance of the exposure apparatus 100, the evaluation mask 10 is exposed, for example, by exposing the substrate for evaluation using the positive resist, and developing the substrate. At this time, the partial region 15a having a high aperture ratio is wider than the partial region 12a having a low aperture ratio, and a larger positive resist is dissolved in the developer, so that the developer of the partial region having a high aperture ratio is The developing power is locally lowered. Therefore, in the case where the patterns 11 to 19 are residual patterns (patterns evaluated by the light shielding portion in the evaluation mask 10), the line width ratio of the resist image corresponding to the pattern 15 is the resist corresponding to the pattern 12. The line width of the image is thick. In addition, in the case where the patterns 11 to 19 are the removed patterns (the patterns evaluated by the openings in the evaluation mask 10), the line width ratio of the resist image corresponding to the pattern 15 is the resist corresponding to the pattern 12. The line width of the image is thin. Further, in the case of the negative resist, the exposed portion remains in the development, so that when the substrate for evaluation coated with the negative resist is exposed and the substrate is developed, development of a portion having a low aperture ratio is developed. The developing power of the liquid is locally lowered. Hereinafter, the case of the positive resist will be described.
圖3是示出與圖案12、15以及18的各者對應的抗蝕劑像的線寬差(CD差)的一個例子的圖。此處,將圖案12、15以及18設為殘留圖案,並將圖案12、15以及18 的線寬設為2.0μm。包含圖案12、15以及18的各者的部分區域中的開口率在包含圖案12以及18的各者的部分區域中變低,在包含圖案15的部分區域中變高。因此,如圖3所示,與圖案12以及18的各者對應的抗蝕劑像的線寬比2.0μm細,與圖案15對應的抗蝕劑像的線寬比2.0μm粗。這樣,如果由於顯影液的部分的顯影力的降低所致的影響而與用於評估曝光裝置100的性能的各圖案對應的抗蝕劑像的線寬發生變化,則無法正確地評估曝光裝置100的性能。在這樣的情況下,根據該評估結果來調整曝光裝置100的性能,所以無法正確地調整曝光裝置100的性能。 FIG. 3 is a view showing an example of a line width difference (CD difference) of a resist image corresponding to each of the patterns 12, 15, and 18. Here, the patterns 12, 15 and 18 are set as residual patterns, and the patterns 12, 15 and 18 are placed. The line width is set to 2.0 μm. The aperture ratio in the partial region of each of the patterns 12, 15 and 18 becomes lower in a partial region including each of the patterns 12 and 18, and becomes higher in a partial region including the pattern 15. Therefore, as shown in FIG. 3, the line width of the resist image corresponding to each of the patterns 12 and 18 is thinner than 2.0 μm, and the line width of the resist image corresponding to the pattern 15 is thicker than 2.0 μm. Thus, if the line width of the resist image corresponding to each pattern for evaluating the performance of the exposure apparatus 100 changes due to the influence of the decrease in the developing power of the developing portion, the exposure apparatus 100 cannot be correctly evaluated. Performance. In such a case, the performance of the exposure apparatus 100 is adjusted based on the evaluation result, so that the performance of the exposure apparatus 100 cannot be accurately adjusted.
因此,在本實施形態中,評估用遮罩10如圖4所示,除了圖案11至19和圖案20以外,還包含虛設圖案(dummy pattern)21以及22。在圖4中,為了簡化,僅示出了用於評估線寬以及焦點中的至少一方的圖案11至19、用於評估投影光學系統4的失真的圖案20、虛設圖案21以及22。但是,本實施形態中的評估用遮罩10也可以除了包含用於評估(調整)曝光裝置100、投影光學系統4的其他成像性能、用於掃描曝光的驅動系統的圖案以外,還包含用於評估遠心、閃光(flare)、鳥瞰圖像等的圖案。 Therefore, in the present embodiment, as shown in FIG. 4, the evaluation mask 10 includes dummy patterns 21 and 22 in addition to the patterns 11 to 19 and the pattern 20. In FIG. 4, for the sake of simplicity, only the patterns 11 to 19 for evaluating at least one of the line width and the focus, the pattern 20 for evaluating the distortion of the projection optical system 4, the dummy patterns 21 and 22 are shown. However, the evaluation mask 10 in the present embodiment may include, in addition to the pattern for evaluating (adjusting) the exposure apparatus 100, the other imaging performance of the projection optical system 4, and the driving system for scanning exposure, Evaluate patterns of telecentric, flare, bird's-eye images, and the like.
在本實施形態中的評估用遮罩10中,以使包含圖案11至19的各者的部分區域中的每單位面積的開口部和遮光部的比例(開口率)的差分成為±10%以內的方式,形 成了虛設圖案21以及22。在本實施形態中,以使包含圖案11至19的各者的部分區域中的每單位面積的開口率相等的方式,在圖案11至13的周圍以及圖案17至19的周圍的各者中形成了虛設圖案21以及22。換言之,為了使包含圖案11至19的各者的部分區域中的每單位面積的開口部的面積一致,形成了虛設圖案21以及22。另外,虛設圖案21以及22還可以說是在經由評估用遮罩10使基板在曝光裝置100中曝光並使上述基板顯影時,為了使與圖案11至19的各者對應的抗蝕劑像各自的線寬成為相同而形成。 In the evaluation mask 10 of the present embodiment, the difference between the ratio (opening ratio) of the opening portion per unit area and the light shielding portion in the partial region including each of the patterns 11 to 19 is within ±10%. Way It becomes a dummy pattern 21 and 22. In the present embodiment, the aperture ratio per unit area in the partial region including each of the patterns 11 to 19 is made equal to each of the patterns 11 to 13 and the periphery of the patterns 17 to 19. The dummy patterns 21 and 22 are used. In other words, in order to make the areas of the opening portions per unit area in the partial regions including the respective patterns 11 to 19 coincide, the dummy patterns 21 and 22 are formed. In addition, the dummy patterns 21 and 22 can also be said that when the substrate is exposed to the exposure apparatus 100 via the evaluation mask 10 and the substrate is developed, the resist images corresponding to the respective patterns 11 to 19 are respectively used. The line widths are formed the same.
在圖4中,用虛線表示形成了用於評估投影光學系統4的失真的圖案20的區域,用雙點劃線表示形成了虛設圖案21以及22的各者的區域。如上所述,以使包含圖案11至19的各者的部分區域中的每單位面積的開口率的差分成為±10%以內為目的,形成了虛設圖案21以及22。因此,在評估投影光學系統4的失真時,不使用虛設圖案21以及22。另外,虛設圖案21以及22各自設為與用於評估投影光學系統4的失真的圖案20相同的開口圖案,但不限於此。例如,虛設圖案21以及22無需是與圖案20相同的開口圖案(即也可以是與圖案20不同的開口圖案),也可以僅形成於包含圖案11至13以及圖案17至19的各者的部分區域。 In FIG. 4, a region in which the pattern 20 for estimating the distortion of the projection optical system 4 is formed is indicated by a broken line, and a region in which each of the dummy patterns 21 and 22 is formed is indicated by a two-dot chain line. As described above, the dummy patterns 21 and 22 are formed for the purpose of making the difference of the aperture ratio per unit area in the partial region including each of the patterns 11 to 19 within ±10%. Therefore, when evaluating the distortion of the projection optical system 4, the dummy patterns 21 and 22 are not used. Further, the dummy patterns 21 and 22 are each set to the same opening pattern as the pattern 20 for evaluating the distortion of the projection optical system 4, but are not limited thereto. For example, the dummy patterns 21 and 22 need not be the same opening pattern as the pattern 20 (that is, may be an opening pattern different from the pattern 20), or may be formed only in portions including the patterns 11 to 13 and the patterns 17 to 19. region.
圖5A至圖5C的各者是示出圖案11、15以及19各自的附近,具體而言示出包含圖案11、15以及19的各者 的部分區域11a、15a以及19a的放大圖。包含圖案15(第1圖案)的部分區域15a(第1部分區域)中的每單位面積的開口率(第1比例)、和包含圖案11(第2圖案)的部分區域11a(第2部分區域)中的每單位面積的開口率(第2比例)相等。同樣地,包含圖案15的部分區域15a中的每單位面積的開口率、和包含圖案19(第2圖案)的部分區域19a(第2部分區域)中的每單位面積的開口率(第2比例)相等。 Each of FIGS. 5A to 5C is a view showing the vicinity of each of the patterns 11, 15, and 19, specifically, each of the patterns including the patterns 11, 15, and 19. An enlarged view of the partial regions 11a, 15a, and 19a. The aperture ratio per unit area (first ratio) in the partial region 15a (first partial region) including the pattern 15 (first pattern), and the partial region 11a (second partial region) including the pattern 11 (second pattern) The aperture ratio (the second ratio) per unit area is equal. Similarly, the aperture ratio per unit area in the partial region 15a including the pattern 15 and the aperture ratio per unit area in the partial region 19a (second partial region) including the pattern 19 (second pattern) (the second ratio) )equal.
在本實施形態中,包含圖案11的部分區域11a是以圖案11為中心的圓形的區域,包含圖案15的部分區域15a是以圖案15為中心的圓形的區域。同樣地,包含圖案19的部分區域19a是以圖案19為中心的圓形的區域。另外,考慮對使用評估用遮罩10來評估的焦點、曝光量等曝光條件進行改變而進行曝光時的影響(改變基板上的曝光區域),將部分區域11a、15a以及19b設為直徑5mm以上、80mm以下的區域。 In the present embodiment, the partial region 11a including the pattern 11 is a circular region centered on the pattern 11, and the partial region 15a including the pattern 15 is a circular region centered on the pattern 15. Similarly, the partial region 19a including the pattern 19 is a circular region centered on the pattern 19. In addition, in consideration of the influence of the exposure conditions such as the focus and the exposure amount evaluated using the evaluation mask 10, the exposure is performed (changing the exposure region on the substrate), and the partial regions 11a, 15a, and 19b are set to have a diameter of 5 mm or more. , 80mm or less area.
接下來,說明關於使用評估用遮罩10來評估線寬以及焦點時的處理(評估方法)。如上所述,控制部7總括控制曝光裝置100的各部分,從而進行上述處理。 Next, a process (evaluation method) when the line width and the focus are evaluated using the evaluation mask 10 will be described. As described above, the control unit 7 collectively controls the respective portions of the exposure apparatus 100 to perform the above processing.
首先,輸出曝光量的條件。具體而言,將評估用遮罩10保持於遮罩台2,經由評估用遮罩10(圖案11至19),針對使塗布了抗蝕劑的基板上的X方向的位置發生了偏移的部位,在改變焦點和曝光量的同時進行曝光。然後,使上述基板顯影,測量與形成在基板上的圖案11至 19的各者對應的抗蝕劑像的線寬,根據其測量結果,求出最佳焦點的最合適的曝光量。 First, the condition of the exposure amount is output. Specifically, the evaluation mask 10 is held by the mask stage 2, and the position of the X direction on the substrate on which the resist is applied is shifted by the evaluation mask 10 (patterns 11 to 19). At the site, exposure is performed while changing the focus and exposure. Then, the above substrate is developed, and the pattern 11 formed on the substrate is measured to The line width of the resist image corresponding to each of 19 is determined based on the measurement result, and the optimum exposure amount of the optimum focus is obtained.
接下來,以最合適的曝光量,經由評估用遮罩10(圖案11至19),針對使塗布了抗蝕劑的基板上的X方向的位置發生了偏移的部位,在改變焦點的同時進行曝光。然後,使上述基板顯影,測量與形成在基板上的圖案11至19的各者對應的抗蝕劑像的線寬,根據其測量結果,求出焦點和線寬的關係。 Next, at the most appropriate exposure amount, via the evaluation mask 10 (patterns 11 to 19), the position where the position on the resist-coated substrate in the X direction is shifted is changed while the focus is changed. Exposure. Then, the substrate was developed, and the line width of the resist image corresponding to each of the patterns 11 to 19 formed on the substrate was measured, and the relationship between the focus and the line width was obtained based on the measurement results.
接下來,根據焦點和線寬的關係,評估線寬以及焦點。具體而言,求出滿足圖案11至19的全部所容許的線寬的範圍的共同的焦點範圍,設為曝光裝置100的焦點深度(DOF:Depth of Focus)。另外,將圖案11至19的全部的平均最佳焦點處的線寬的偏移設為線寬均勻性。 Next, the line width and the focus are evaluated based on the relationship between the focus and the line width. Specifically, a common focus range that satisfies the range of all allowable line widths of the patterns 11 to 19 is obtained, and is set as the depth of focus (DOF: Depth of Focus) of the exposure apparatus 100. Further, the offset of the line width at the average average focus of all of the patterns 11 to 19 is set as the line width uniformity.
根據本實施形態,通過使用圖4所示的評估用遮罩10,能夠不受到包含圖案11至19的各者的部分區域中的每單位面積的開口率的差分所致的顯影的影響,以高的精度評估曝光裝置100的性能。 According to the present embodiment, by using the evaluation mask 10 shown in FIG. 4, it is possible to prevent the influence of development due to the difference in the aperture ratio per unit area in the partial region of each of the patterns 11 to 19. The performance of the exposure apparatus 100 is evaluated with high precision.
另外,在本實施形態中,根據使用圖4所示的評估用遮罩10而評估了的曝光裝置100的性能,調整曝光裝置100的性能。另外,曝光裝置100的性能的調整包含例如為了調整線寬而調整照明光學系統3的照度不均勻、為了調整焦點而調整投影光學系統4的光學元件等。由此,能夠不受上述顯影的影響而調整曝光裝置100的性能,能夠提供具有優良的性能的曝光裝置100。因此,曝光裝置 100能夠提供高的吞吐量且經濟性良好的高品質的設備(液晶顯示設備、半導體設備等)。 Further, in the present embodiment, the performance of the exposure apparatus 100 is adjusted in accordance with the performance of the exposure apparatus 100 evaluated using the evaluation mask 10 shown in FIG. Further, the adjustment of the performance of the exposure apparatus 100 includes, for example, adjusting the illuminance unevenness of the illumination optical system 3 for adjusting the line width, adjusting the optical element of the projection optical system 4 for adjusting the focus, and the like. Thereby, the performance of the exposure apparatus 100 can be adjusted without being affected by the above-described development, and the exposure apparatus 100 having excellent performance can be provided. Therefore, the exposure device The high-quality device (liquid crystal display device, semiconductor device, etc.) capable of providing high throughput and economical efficiency.
本發明的實施形態中的物品之製造方法適用於例如製造液晶顯示設備等物品。上述製造方法包含使用曝光裝置100而使塗布了感光劑的基板曝光的程序、以及使曝光了的基板顯影的程序。另外,接著上述形成程序,上述製造方法可以包含其他周知的程序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕劑剝離、切割、接合、封裝等)。本實施形態中的物品之製造方法相比於以往,在物品之性能、品質、生產性以及生產成本的至少1個方面有利。 The method for producing an article in the embodiment of the present invention is applied to, for example, production of an article such as a liquid crystal display device. The above manufacturing method includes a procedure of exposing the substrate coated with the photosensitive agent using the exposure device 100, and a program for developing the exposed substrate. Further, following the formation procedure described above, the above-described manufacturing method may include other well-known procedures (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, encapsulation, etc.). The method for producing an article according to the present embodiment is advantageous in at least one aspect of the performance, quality, productivity, and production cost of the article.
以上,說明了關於本發明的優選的實施形態,但本發明不限於這些實施形態,可以在其要旨的範圍內進行各種變形以及變更。 The preferred embodiments of the present invention have been described above, but the present invention is not limited to the embodiments, and various modifications and changes can be made within the scope of the invention.
與例示的實施形態關聯地對本發明進行了說明,但應當理解本發明不限於公開的例示的實施形態。接下來的請求範圍應當被賦予最寬的解釋,以包含構成以及功能的所有變形例以及均等物。 The present invention has been described in connection with the embodiments shown, but it is understood that the invention is not limited to the disclosed embodiments. The scope of the following claims should be accorded the broadest description, and all the modifications and equivalents.
10‧‧‧評估用遮罩 10‧‧‧Evaluation mask
11‧‧‧圖案 11‧‧‧ pattern
11a‧‧‧部分區域 11a‧‧‧Partial areas
12‧‧‧圖案 12‧‧‧ pattern
13~15‧‧‧圖案 13~15‧‧‧ pattern
15a‧‧‧部分區域 15a‧‧‧Partial areas
16~19‧‧‧圖案 16~19‧‧‧ pattern
19a‧‧‧部分區域 19a‧‧‧Partial areas
20‧‧‧圖案 20‧‧‧ patterns
21‧‧‧虛設圖案 21‧‧‧Dummy design
22‧‧‧虛設圖案 22‧‧‧Dummy design
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JP2014173007A JP6415186B2 (en) | 2014-08-27 | 2014-08-27 | Evaluation mask, evaluation method, exposure apparatus, and article manufacturing method |
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KR (1) | KR101952990B1 (en) |
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JP2002015992A (en) * | 2000-04-25 | 2002-01-18 | Nikon Corp | Lithographic process, evaluating method for lithography system, adjusting method for substrate-processing apparatus, lithography system, method and apparatus for exposure, and method for measuring condition of photosensitive material |
JP2003007591A (en) * | 2001-06-21 | 2003-01-10 | Nikon Corp | Method for evaluating aberration of charged particle beam optical system, method for adjusting charged particle beam device, charged particle beam exposing method, method for evaluating astigmatism and evaluation pattern |
JP2003142367A (en) * | 2001-10-31 | 2003-05-16 | Sony Corp | Evaluation mask and method for evaluating mask |
JP2003318083A (en) * | 2002-04-22 | 2003-11-07 | Nikon Corp | Optical characteristic measuring method, adjusting method of optical system, exposing method and device, and device manufacturing method |
JP4051240B2 (en) * | 2002-07-31 | 2008-02-20 | 富士通株式会社 | Test photomask, flare evaluation method, and flare correction method |
JP4005870B2 (en) * | 2002-08-02 | 2007-11-14 | 株式会社東芝 | Mask, mask creation method, and semiconductor device manufacturing method |
JP5164409B2 (en) * | 2006-09-28 | 2013-03-21 | 富士フイルム株式会社 | PHOTOCURABLE COMPOSITION, COLOR FILTER, ITS MANUFACTURING METHOD, AND SOLID-STATE IMAGING DEVICE |
DE102008019341B4 (en) * | 2008-04-15 | 2020-09-24 | Carl Zeiss Smt Gmbh | Method for the analysis of masks for photolithography |
JP2012047937A (en) * | 2010-08-26 | 2012-03-08 | Nsk Technology Co Ltd | Exposure evaluation mask and exposure evaluation method |
JP2012078552A (en) * | 2010-10-01 | 2012-04-19 | Toppan Printing Co Ltd | Photomask producing method |
JP5497693B2 (en) * | 2011-06-10 | 2014-05-21 | Hoya株式会社 | Photomask substrate, photomask substrate manufacturing method, photomask manufacturing method, and pattern transfer method |
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CN105388699A (en) | 2016-03-09 |
CN105388699B (en) | 2019-11-01 |
JP6415186B2 (en) | 2018-10-31 |
TW201608330A (en) | 2016-03-01 |
JP2016048299A (en) | 2016-04-07 |
KR101952990B1 (en) | 2019-02-27 |
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