TWI597562B - Evaluation mask, evaluation method, exposure apparatus, and method of manufacturing an article processed from a substrate - Google Patents

Description

Evaluation mask, evaluation method, exposure apparatus, and method of manufacturing an article processed from a substrate

The present invention relates to an evaluation mask, an evaluation method, an exposure apparatus, and a method of manufacturing an article used in evaluating the performance of an exposure apparatus.

The exposure device transfers (images) a pattern of a mask or a reticle to a substrate (semiconductor wafer, glass plate) coated with a sensitizer such as a resist through a projection optical system to transfer the pattern to the substrate. on. In recent years, a scanning type exposure apparatus and an exposure apparatus of a step-and-scan type have been mainly used. The scanning type exposure apparatus illuminates a part of the area of the mask, and scans the mask and the substrate with respect to the projection optical system. The substrate is exposed.

In recent years, with the miniaturization of equipment, high performance of an exposure apparatus is required. Therefore, it is necessary to use an evaluation mask to evaluate the performance of an exposure apparatus with high precision. In the above-described evaluation mask, for example, a function for evaluating the imaging performance of the exposure device, a function for evaluating the imaging performance of the projection optical system on the exposure device, and a function for adjusting the driving system for scanning exposure are required. Wait. In particular, the evaluation mask for the liquid crystal exposure apparatus is large It is expensive and expensive, so it requires multiple functions. Here, the imaging performance of the exposure device includes a focus, a line width (CD: Critical Dimension), a distortion, an overlay, and the like. The imaging performance of the projection optical system includes a focus (image plane, astigmatism, astigmatism), distortion, and the like in an effective area of the projection optical system. In addition, the adjustment of the driving system for scanning exposure includes: a mask table that holds the mask and moves, an adjustment of the substrate table that holds the substrate and moves, and a masking film that shields the unexposed portion of the mask from the masking blade. ) The adjustment of the position, etc.

In such an evaluation mask, it is also required to improve the accuracy of the above functions. In particular, the effective area of the projection optical system is narrowed as the imaging performance is highly refined, and the imaging performance in the effective area is evaluated with the same resolution as in the past, for example, it is required to be configured with a finer pitch than usual to evaluate the distortion. picture of.

When evaluating the imaging performance of the exposure apparatus and the projection optical system, the substrate coated with the resist is exposed through the mask for evaluation, the substrate is developed, and the resist corresponding to the pattern of the mask for evaluation is measured by the measuring device. image. The mask for evaluation is a light-shielding portion in order to prevent the influence of light from a region other than the light-transmitting pattern for evaluating the imaging performance of the exposure device or the projection optical system. In the evaluation mask, generally, a plurality of patterns are arranged, and the ratio of the light-transmitting pattern and the light-shielding portion around the pattern (hereinafter referred to as "opening ratio") varies depending on the area on the substrate. Here, for example, a case where a positive resist from which a resist to be irradiated with light is removed is used for evaluation. In this case, the positive resist on the exposed substrate is displayed In the case of shadowing, the region where the aperture ratio is high is wider than the region where the aperture ratio is low, and more of the positive resist is dissolved in the developer, so that the developing power of the developer in this region is locally lowered. In such a case, the resist image is affected by a decrease in the developing power of the portion (for example, a change in CD, etc.), so that the performance of the exposure device cannot be accurately evaluated. For this reason, a technique for suppressing a decrease in the developing power of the developer is proposed in Japanese Laid-Open Patent Publication No. 2006-319350.

However, the imaging performance of the exposure apparatus and the projection optical system is evaluated as an inspection at the time of installation of the exposure apparatus. However, the development apparatus differs depending on the installation destination of the exposure apparatus, and it is necessary to use a response that is not performed in Patent Document 1. Developing device.

In addition, a technique is also considered in which a mask for evaluation is designed (manufactured) in consideration of the influence of the reduction in developing power. However, since the influence of the reduction of the developing power varies depending on the adjustment state of the developing device, it is necessary to confirm the influence at the time of installation of the exposure device to manufacture the mask for evaluation, which is not practical.

The present invention provides a mask for evaluation which is advantageous for evaluating the performance of an exposure apparatus with high precision.

The evaluation mask according to the first aspect of the present invention is used when evaluating the performance of an exposure apparatus for exposing a substrate, and has a first pattern and a second pattern for evaluating the first performance of the exposure apparatus; And a dummy pattern for causing the first partial region including the first pattern The difference between the first ratio of the opening portion and the light shielding portion per unit area and the second ratio of the opening portion per unit area and the light shielding portion in the second partial region including the second pattern is within ±10%.

Further objects or other aspects of the present invention will become more apparent from the preferred embodiments described herein.

1‧‧‧ mask

2‧‧‧ masking table

3‧‧‧Lighting optical system

4‧‧‧Projection optical system

5‧‧‧Substrate

6‧‧‧ substrate table

7‧‧‧Control Department

10‧‧‧Evaluation mask

11‧‧‧ pattern

11a‧‧‧Partial areas

12‧‧‧ pattern

12a‧‧‧Partial areas

13~15‧‧‧ pattern

15a‧‧‧Partial areas

16~19‧‧‧ pattern

19a‧‧‧Partial areas

20‧‧‧ patterns

21‧‧‧Dummy design

22‧‧‧Dummy design

100‧‧‧Exposure device

1 is a schematic view showing the configuration of an exposure apparatus as one aspect of the present invention.

FIG. 2 is a schematic view showing a configuration of a comparative example as a mask for evaluation.

3 is a view showing an example of a line width difference of a resist image corresponding to the first pattern of the evaluation mask shown in FIG. 2 .

Fig. 4 is a schematic view showing the configuration of a mask for evaluation in the present embodiment.

5A to 5C are enlarged views showing a partial region including a pattern of the evaluation mask shown in Fig. 4.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference numerals, and the description thereof will not be repeated.

FIG. 1 is a schematic view showing the configuration of an exposure apparatus 100 as an aspect of the present invention. The exposure device 100 transfers the pattern of the mask to the substrate The lithographic apparatus is also a lithographic apparatus that exposes the substrate even. The exposure apparatus 100 includes a mask stage 2, an illumination optical system 3, a projection optical system 4, a substrate stage 6, and a control unit 7.

The mask table 2 exchangeably holds a mask 1 having a pattern to be transferred to the substrate 5, and an evaluation mask 10 for evaluating the performance of the exposure apparatus 100. The illumination optical system 3 illuminates the mask 1 and the evaluation mask 10 held by the mask stage 2. The projection optical system 4 projects the mask 1 and the pattern of the evaluation mask 10 that are illuminated by the illumination optical system 3 onto the substrate 5. The substrate stage 6 holds the substrate 5. The control unit 7 includes a CPU, a memory, and the like, and controls the entire exposure apparatus 100 (each unit of the exposure apparatus 100). The control unit 7 controls, for example, a process of exposing the substrate 5, a process of evaluating the performance of the exposure apparatus 100, a process of adjusting the performance of the exposure apparatus 100, and the like.

The mask 1 and the substrate 5 are disposed at positions substantially optically conjugated with the projection optical system 4 interposed therebetween. The illumination optical system 3 is distributed on the mask 1 with a uniform illuminance to form an exposed area of an arc shape or a trapezoidal shape. Light from the pattern of the mask 1 is imaged on the substrate 5 held on the substrate stage 6 via the projection optical system 4. At this time, both the mask stage 2 and the substrate stage 6 are driven with respect to the optical axis of the projection optical system 4, so that an area wider than the exposure area formed by the illumination optical system 3 can be exposed.

Here, a configuration of a comparative example as the mask 10 for evaluation will be described with reference to FIG. 2 . In Fig. 2, for the sake of simplicity, only the patterns required for the description are shown. The evaluation mask 10 shown in FIG. 2 includes patterns (elements) 11 to 19 for evaluating the first performance of the exposure apparatus 100, and patterns for evaluating the second performance different from the first performance of the exposure apparatus 100. 20. Further, specifically, the first performance includes at least one of a line width (CD: Critical Dimension) and a focus, and the second performance includes distortion of the projection optical system 4.

The patterns 11 to 19 are respectively constituted by, for example, a so-called line and space pattern. However, in Fig. 2, simplification is shown and shown by a circular opening. In order to cover the maximum exposure area of the exposure apparatus 100, the patterns 11 to 19 are disposed in the entirety including the center and the periphery of the evaluation mask 10. Further, the pattern 20 is composed of, for example, a pattern in which a plurality of openings of a cross shape are arranged. However, in Fig. 2, simplification is shown and shown by a rectangular opening. The pattern 20 is disposed around the patterns 14, 15, and 16 in a region that covers the extent of the effective area of the projection optical system 4. Since the exposure device 100 is a scanning type exposure device, the effective area of the projection optical system 4 is narrower than the maximum exposure area of the exposure device 100. The patterns 11, 12 and 13, the patterns 14, 15, and 16, and the patterns 17, 18, and 19 are arranged staggered in the longitudinal direction (y direction). The exposure device 100 scans the evaluation mask 10 in the y direction while sequentially performing exposure. When evaluating the performance of the exposure apparatus 100, the patterns 11 to 19 and the pattern 20 function as an opening (light transmitting portion) that transmits (passes) light from the illumination optical system 3. Further, in the comparative example, in order to prevent the influence of light from a region other than the pattern for evaluating the performance of the exposure device 100 from being evaluated when evaluating the performance of the exposure device 100, a pattern other than the pattern for evaluating the performance of the exposure device 100 will be employed. The area is set to the shade.

In the evaluation mask 10 shown in FIG. 2, between the patterns 11 to 19, the respective circumferences of the patterns 11 to 19, that is, the respective patterns 11 to 19 are included. The ratio (opening ratio) of the opening portion and the light shielding portion in the partial region is different. For example, since the partial region 15a including the pattern 15 (first pattern) further includes the pattern 20 (third pattern), the ratio of the opening portion is high (that is, the aperture ratio is high). On the other hand, since the partial region 12a including the pattern 12 (second pattern) does not include the pattern 20, the ratio of the opening portion is low (that is, the aperture ratio is low).

When evaluating the performance of the exposure apparatus 100, the evaluation mask 10 is exposed, for example, by exposing the substrate for evaluation using the positive resist, and developing the substrate. At this time, the partial region 15a having a high aperture ratio is wider than the partial region 12a having a low aperture ratio, and a larger positive resist is dissolved in the developer, so that the developer of the partial region having a high aperture ratio is The developing power is locally lowered. Therefore, in the case where the patterns 11 to 19 are residual patterns (patterns evaluated by the light shielding portion in the evaluation mask 10), the line width ratio of the resist image corresponding to the pattern 15 is the resist corresponding to the pattern 12. The line width of the image is thick. In addition, in the case where the patterns 11 to 19 are the removed patterns (the patterns evaluated by the openings in the evaluation mask 10), the line width ratio of the resist image corresponding to the pattern 15 is the resist corresponding to the pattern 12. The line width of the image is thin. Further, in the case of the negative resist, the exposed portion remains in the development, so that when the substrate for evaluation coated with the negative resist is exposed and the substrate is developed, development of a portion having a low aperture ratio is developed. The developing power of the liquid is locally lowered. Hereinafter, the case of the positive resist will be described.

FIG. 3 is a view showing an example of a line width difference (CD difference) of a resist image corresponding to each of the patterns 12, 15, and 18. Here, the patterns 12, 15 and 18 are set as residual patterns, and the patterns 12, 15 and 18 are placed. The line width is set to 2.0 μm. The aperture ratio in the partial region of each of the patterns 12, 15 and 18 becomes lower in a partial region including each of the patterns 12 and 18, and becomes higher in a partial region including the pattern 15. Therefore, as shown in FIG. 3, the line width of the resist image corresponding to each of the patterns 12 and 18 is thinner than 2.0 μm, and the line width of the resist image corresponding to the pattern 15 is thicker than 2.0 μm. Thus, if the line width of the resist image corresponding to each pattern for evaluating the performance of the exposure apparatus 100 changes due to the influence of the decrease in the developing power of the developing portion, the exposure apparatus 100 cannot be correctly evaluated. Performance. In such a case, the performance of the exposure apparatus 100 is adjusted based on the evaluation result, so that the performance of the exposure apparatus 100 cannot be accurately adjusted.

Therefore, in the present embodiment, as shown in FIG. 4, the evaluation mask 10 includes dummy patterns 21 and 22 in addition to the patterns 11 to 19 and the pattern 20. In FIG. 4, for the sake of simplicity, only the patterns 11 to 19 for evaluating at least one of the line width and the focus, the pattern 20 for evaluating the distortion of the projection optical system 4, the dummy patterns 21 and 22 are shown. However, the evaluation mask 10 in the present embodiment may include, in addition to the pattern for evaluating (adjusting) the exposure apparatus 100, the other imaging performance of the projection optical system 4, and the driving system for scanning exposure, Evaluate patterns of telecentric, flare, bird's-eye images, and the like.

In the evaluation mask 10 of the present embodiment, the difference between the ratio (opening ratio) of the opening portion per unit area and the light shielding portion in the partial region including each of the patterns 11 to 19 is within ±10%. Way It becomes a dummy pattern 21 and 22. In the present embodiment, the aperture ratio per unit area in the partial region including each of the patterns 11 to 19 is made equal to each of the patterns 11 to 13 and the periphery of the patterns 17 to 19. The dummy patterns 21 and 22 are used. In other words, in order to make the areas of the opening portions per unit area in the partial regions including the respective patterns 11 to 19 coincide, the dummy patterns 21 and 22 are formed. In addition, the dummy patterns 21 and 22 can also be said that when the substrate is exposed to the exposure apparatus 100 via the evaluation mask 10 and the substrate is developed, the resist images corresponding to the respective patterns 11 to 19 are respectively used. The line widths are formed the same.

In FIG. 4, a region in which the pattern 20 for estimating the distortion of the projection optical system 4 is formed is indicated by a broken line, and a region in which each of the dummy patterns 21 and 22 is formed is indicated by a two-dot chain line. As described above, the dummy patterns 21 and 22 are formed for the purpose of making the difference of the aperture ratio per unit area in the partial region including each of the patterns 11 to 19 within ±10%. Therefore, when evaluating the distortion of the projection optical system 4, the dummy patterns 21 and 22 are not used. Further, the dummy patterns 21 and 22 are each set to the same opening pattern as the pattern 20 for evaluating the distortion of the projection optical system 4, but are not limited thereto. For example, the dummy patterns 21 and 22 need not be the same opening pattern as the pattern 20 (that is, may be an opening pattern different from the pattern 20), or may be formed only in portions including the patterns 11 to 13 and the patterns 17 to 19. region.

Each of FIGS. 5A to 5C is a view showing the vicinity of each of the patterns 11, 15, and 19, specifically, each of the patterns including the patterns 11, 15, and 19. An enlarged view of the partial regions 11a, 15a, and 19a. The aperture ratio per unit area (first ratio) in the partial region 15a (first partial region) including the pattern 15 (first pattern), and the partial region 11a (second partial region) including the pattern 11 (second pattern) The aperture ratio (the second ratio) per unit area is equal. Similarly, the aperture ratio per unit area in the partial region 15a including the pattern 15 and the aperture ratio per unit area in the partial region 19a (second partial region) including the pattern 19 (second pattern) (the second ratio) )equal.

In the present embodiment, the partial region 11a including the pattern 11 is a circular region centered on the pattern 11, and the partial region 15a including the pattern 15 is a circular region centered on the pattern 15. Similarly, the partial region 19a including the pattern 19 is a circular region centered on the pattern 19. In addition, in consideration of the influence of the exposure conditions such as the focus and the exposure amount evaluated using the evaluation mask 10, the exposure is performed (changing the exposure region on the substrate), and the partial regions 11a, 15a, and 19b are set to have a diameter of 5 mm or more. , 80mm or less area.

Next, a process (evaluation method) when the line width and the focus are evaluated using the evaluation mask 10 will be described. As described above, the control unit 7 collectively controls the respective portions of the exposure apparatus 100 to perform the above processing.

First, the condition of the exposure amount is output. Specifically, the evaluation mask 10 is held by the mask stage 2, and the position of the X direction on the substrate on which the resist is applied is shifted by the evaluation mask 10 (patterns 11 to 19). At the site, exposure is performed while changing the focus and exposure. Then, the above substrate is developed, and the pattern 11 formed on the substrate is measured to The line width of the resist image corresponding to each of 19 is determined based on the measurement result, and the optimum exposure amount of the optimum focus is obtained.

Next, at the most appropriate exposure amount, via the evaluation mask 10 (patterns 11 to 19), the position where the position on the resist-coated substrate in the X direction is shifted is changed while the focus is changed. Exposure. Then, the substrate was developed, and the line width of the resist image corresponding to each of the patterns 11 to 19 formed on the substrate was measured, and the relationship between the focus and the line width was obtained based on the measurement results.

Next, the line width and the focus are evaluated based on the relationship between the focus and the line width. Specifically, a common focus range that satisfies the range of all allowable line widths of the patterns 11 to 19 is obtained, and is set as the depth of focus (DOF: Depth of Focus) of the exposure apparatus 100. Further, the offset of the line width at the average average focus of all of the patterns 11 to 19 is set as the line width uniformity.

According to the present embodiment, by using the evaluation mask 10 shown in FIG. 4, it is possible to prevent the influence of development due to the difference in the aperture ratio per unit area in the partial region of each of the patterns 11 to 19. The performance of the exposure apparatus 100 is evaluated with high precision.

Further, in the present embodiment, the performance of the exposure apparatus 100 is adjusted in accordance with the performance of the exposure apparatus 100 evaluated using the evaluation mask 10 shown in FIG. Further, the adjustment of the performance of the exposure apparatus 100 includes, for example, adjusting the illuminance unevenness of the illumination optical system 3 for adjusting the line width, adjusting the optical element of the projection optical system 4 for adjusting the focus, and the like. Thereby, the performance of the exposure apparatus 100 can be adjusted without being affected by the above-described development, and the exposure apparatus 100 having excellent performance can be provided. Therefore, the exposure device The high-quality device (liquid crystal display device, semiconductor device, etc.) capable of providing high throughput and economical efficiency.

The method for producing an article in the embodiment of the present invention is applied to, for example, production of an article such as a liquid crystal display device. The above manufacturing method includes a procedure of exposing the substrate coated with the photosensitive agent using the exposure device 100, and a program for developing the exposed substrate. Further, following the formation procedure described above, the above-described manufacturing method may include other well-known procedures (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, encapsulation, etc.). The method for producing an article according to the present embodiment is advantageous in at least one aspect of the performance, quality, productivity, and production cost of the article.

The preferred embodiments of the present invention have been described above, but the present invention is not limited to the embodiments, and various modifications and changes can be made within the scope of the invention.

The present invention has been described in connection with the embodiments shown, but it is understood that the invention is not limited to the disclosed embodiments. The scope of the following claims should be accorded the broadest description, and all the modifications and equivalents.

10‧‧‧Evaluation mask

11‧‧‧ pattern

11a‧‧‧Partial areas

12‧‧‧ pattern

13~15‧‧‧ pattern

15a‧‧‧Partial areas

16~19‧‧‧ pattern

19a‧‧‧Partial areas

20‧‧‧ patterns

21‧‧‧Dummy design

22‧‧‧Dummy design

Claims (13)

An evaluation mask for use in evaluating performance of an exposure apparatus for exposing a substrate, characterized by having: a first pattern and a second pattern for evaluating a first performance of the exposure apparatus; and a dummy pattern for making a first ratio of the opening portion and the light shielding portion per unit area in the first partial region including the first pattern, and an opening portion and a light shielding portion per unit area in the second partial region including the second pattern The difference of 2 ratios is within ±10%. The mask for evaluation according to claim 1, wherein the dummy pattern is formed such that the first ratio and the second ratio are equal. The mask for evaluation according to the first aspect of the invention, wherein the first partial region is a circular region centered on the first pattern, and the second partial region is a circle centered on the second pattern. Area. The evaluation mask of claim 3, wherein the first partial region and the second partial region are regions having a diameter of 5 mm or more and 80 mm or less. An evaluation mask according to claim 1, which has a third pattern for evaluating a second performance different from the first performance of the exposure apparatus, The third pattern is disposed around the first pattern in the first partial region, and the dummy pattern is disposed around the second pattern in the second partial region. The mask for evaluation according to claim 5, wherein the first pattern, the second pattern, the third pattern, and the dummy pattern are openings. The evaluation mask of claim 6, wherein the dummy pattern is formed by the same opening pattern as the third pattern. The evaluation mask of claim 5, wherein the first performance includes at least one of a line width and a focus, and the second performance includes distortion. An evaluation mask for use in evaluating performance of an exposure apparatus for exposing a substrate, characterized by having: a first pattern and a second pattern for evaluating a first performance of the exposure apparatus; and a dummy pattern for When the substrate coated with the resist is exposed to the exposure apparatus through the evaluation mask, and the substrate is developed, the line width of the resist image corresponding to the first pattern on the substrate is made The line width of the resist image corresponding to the second pattern is the same. An evaluation mask is used when evaluating the performance of an exposure apparatus that exposes a substrate, characterized by: a first pattern and a second pattern for evaluating a first performance of the exposure apparatus, and a dummy pattern for making an area of an opening per unit area in a first partial region including the first pattern The area of the opening per unit area in the second partial region including the second pattern matches. An evaluation method for evaluating the performance of an exposure apparatus for exposing a substrate, comprising: a procedure of exposing a substrate coated with a resist via a mask for evaluation using the exposure apparatus; and a program for developing the exposed substrate And a procedure for evaluating the performance of the exposure apparatus based on the developed resist image on the substrate, the evaluation mask being the evaluation mask of claim 1 of the patent application. An exposure apparatus for exposing a substrate, comprising: a mask stage, a mask capable of exchangeably holding a pattern to be transferred to the substrate, and an evaluation mask for evaluating performance of the exposure apparatus; and The control unit controls the adjustment of the performance of the exposure apparatus according to the performance of the exposure apparatus evaluated using the evaluation mask described above; the evaluation mask is an evaluation mask as in the first application of the patent scope cover. A method of manufacturing an article processed from a substrate, comprising: a program for exposing a substrate using an exposure apparatus according to claim 12; a program for developing the exposed substrate; and developing the substrate The process in which the substrate is processed to produce an article.