CN105388699A - Mask for evaluation, evaluating method, exposure apparatus and method of manufacturing article - Google Patents
Mask for evaluation, evaluating method, exposure apparatus and method of manufacturing article Download PDFInfo
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- CN105388699A CN105388699A CN201510522421.5A CN201510522421A CN105388699A CN 105388699 A CN105388699 A CN 105388699A CN 201510522421 A CN201510522421 A CN 201510522421A CN 105388699 A CN105388699 A CN 105388699A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Abstract
The invention relates to a mask for evaluation, an evaluating method, an exposure apparatus and a method of manufacturing artical. The mask is used for evaluating the performance of the exposure appratus for exposuring a substrate, and the mask is characterized in that: the mask comprises a first pattern, a second pattern and a dummy pattern, wherein the first pattern and the second pattern can evaluate a first performance of the exposure apparatus, the dummy pattern is used for making a difference between a first proportion and a second proportion is within +-10%, the first proportion includes the opening part and shielding part of per unit area in a first area of the first pattern, and the second proportion includes the opening part and shielding part of per unit area in a second area of the second pattern.
Description
Technical field
The present invention relates to the manufacture method of evaluation mask, evaluation method, exposure device and the article used when evaluating the performance of exposure device.
Background technology
The pattern of mask or reticle mask (reticle) transfers pattern on substrate to the substrate (semiconductor wafer, glass plate) being coated with the emulsion such as resist via projection optical system projection (imaging) by exposure device.In recent years, the exposure device of sweep type, the exposure device of so-called step-scan mode become main flow, and throwing light in the region of exposure device to a part for mask of this sweep type, for projection optical system, scans mask and substrate and make base plate exposure.
In recent years, along with the microminiaturization of equipment, require the high performance of exposure device, so need in-service evaluation mask to come with the performance of high precision evaluation exposure device.In above-mentioned evaluation mask, such as, require the function of the imaging performance for evaluating exposure device, for evaluate the imaging performance of the projection optical system on exposure device function, for adjusting the function etc. of the drive system for scan exposure.Especially, the evaluation mask for liquid crystal exposure apparatus is large-scale and expensive, so require to have several functions.Herein, the imaging performance of exposure device comprises focus, live width (CD:CriticalDimension), distortion, overlap (overlay) etc.The imaging performance of projection optical system comprises focus (image planes, astigmatism, astigmatism (astigmatism)), distortion etc. in the effective coverage of projection optical system.In addition, the adjustment for the drive system of scan exposure comprises: keep the mask mounting table of mask movement, keep the adjustment of the substrate also substrate-placing platform of movement; The part do not exposed on mask is carried out to the adjustment etc. of the position of the anti-dazzling screen (maskingblade) of shading.
In such evaluation mask, also require the precision improving above-mentioned functions.Especially, along with the high-precision refinement of imaging performance, the effective coverage of projection optical system narrows, and in order to evaluate the imaging performance in effective coverage with resolution as in the past, such as, needs to be configured for spacing thinner than ever the pattern evaluating distortion.
When the imaging performance of evaluation exposure device, projection optical system, make via evaluation mask the base plate exposure being coated with resist, aforesaid substrate is developed, with the resist picture that the pattern of measurement mechanism measurement and assessment mask is corresponding.In evaluation mask, in order to prevent from being subject to from for evaluate exposure device, projection optical system imaging performance Transmission light type pattern beyond the impact of light in region, the region beyond Transmission light type pattern is set to light shielding part.Wherein, in evaluation mask, generally, be configured with the pattern of multiple kind, Transmission light type pattern is different for each region on substrate with the ratio (hereinafter referred to as " aperture opening ratio ") of the light shielding part of the surrounding of above-mentioned pattern.Herein, such as, the situation being used for by the removed positive resist of resist of the part of illuminated light evaluating is considered.In this case, during positive resist development on the substrate making to have exposed, the region that the region that aperture opening ratio is high is low compared to aperture opening ratio, the region of development is wider, more positive resist is dissolved into developer solution, so the development power of the developer solution in this region reduces partly.Under these circumstances, resist picture is subject to the impact (change etc. of such as CD) caused by reduction of the development power of part, so correctly cannot evaluate the performance of exposure device.Therefore, the reply of the developing apparatus side of developing as making substrate, proposes the technology suppressing the development power of developer solution to reduce in Japanese Unexamined Patent Publication 2006-319350 publication.
But, when the arranging of exposure device as checking the evaluation of imaging performance carrying out exposure device, projection optical system, but developing apparatus according to exposure device destination is set and different, sometimes must use the developing apparatus not carrying out the such reply of patent documentation 1.
In addition, following technology is also considered: consider that the impact caused by reduction of development power designs (manufacture) evaluation mask.But the impact caused by reduction of development power is different according to the adjustment state of developing apparatus, so must confirm that this impact is to manufacture evaluation mask, so be unpractical when the arranging of exposure device.
Summary of the invention
The invention provides the evaluation mask be conducive to the performance of high precision evaluation exposure device.
Evaluation mask as the 1st aspect of the present invention makes the evaluation mask that uses during the performance of the exposure device of base plate exposure evaluating, and it is characterized in that having: the 1st pattern and the 2nd pattern, for evaluating the 1st performance of described exposure device; And dummy pattern, for the peristome and light shielding part that make the per unit area comprised in the part 1 region of described 1st pattern the 1st ratio, become with the difference comprising the peristome of the per unit area in the part 2 region of described 2nd pattern and the 2nd ratio of light shielding part ± 10% within.
Evaluation mask as the 2nd aspect of the present invention makes the evaluation mask that uses during the performance of the exposure device of base plate exposure evaluating, and it is characterized in that having: the 1st pattern and the 2nd pattern, for evaluating the 1st performance of described exposure device; And dummy pattern, for when making the substrate being coated with resist expose in described exposure device and make this substrate carry out development via described evaluation mask, making the live width corresponding to the resist picture of described 1st pattern on this substrate and becoming identical corresponding to the live width of the resist picture of described 2nd pattern.
Evaluation mask as the 3rd aspect of the present invention makes the evaluation mask that uses during the performance of the exposure device of base plate exposure evaluating, and it is characterized in that having: the 1st pattern and the 2nd pattern, for evaluating the 1st performance of described exposure device; And dummy pattern, for making the area of the peristome of the per unit area comprised in the part 1 region of described 1st pattern consistent with the area of the peristome of the per unit area in the part 2 region comprising described 2nd pattern.
Evaluation method as the 4th aspect of the present invention evaluates the evaluation method making the performance of the exposure device of base plate exposure, it is characterized in that having: use described exposure device to make to be coated with the operation of the base plate exposure of resist via evaluation mask; Make the operation of the described substrate development exposed; And the operation of the performance of described exposure device is evaluated according to the resist picture on the described substrate developed, described evaluation mask is above-mentioned evaluation mask.
Exposure device as the 5th aspect of the present invention is the exposure device making base plate exposure, it is characterized in that, have: mask mounting table, keep that there is the mask of the pattern that should be transferred to described substrate and the evaluation mask for the performance of evaluating described exposure device convertibly; And control part, according to the performance of the described exposure device using described evaluation mask to evaluate, control the adjustment of the performance of described exposure device, described evaluation mask is above-mentioned evaluation mask.
Feature as the manufacture method of the article of the 6th aspect of the present invention is to have: use above-mentioned exposure device to make the operation of base plate exposure; And make the operation of the described substrate development exposed.
By illustrating preferred embodiment referring to accompanying drawing, further object of the present invention or other aspects will definitely.
Accompanying drawing explanation
Fig. 1 is the skeleton diagram of the structure of the exposure device illustrated as one aspect of the present invention.
Fig. 2 is the skeleton diagram of the structure of the comparative example illustrated as evaluation mask.
Fig. 3 is the figure of an example of the linewidth difference that the resist picture corresponding with the 1st pattern of the evaluation mask shown in Fig. 2 is shown.
Fig. 4 is the skeleton diagram of the structure of the evaluation mask illustrated in present embodiment.
Fig. 5 A to Fig. 5 C is the enlarged drawing of the subregion that the pattern comprising the evaluation mask shown in Fig. 4 is shown.
Embodiment
Below, with reference to accompanying drawing, illustrate preferred embodiment of the present invention.In addition, in the various figures, add same as numbering to same parts, the repetitive description thereof will be omitted.
Fig. 1 is the skeleton diagram of the structure of the exposure device 100 illustrated as one aspect of the present invention.Exposure device 100 pattern of mask is transferred to substrate, namely, makes the lithographic equipment of base plate exposure.Exposure device 100 has: mask mounting table 2, lamp optical system 3, projection optical system 4, substrate-placing platform 6 and control part 7.
Mask mounting table 2 keeps having the mask 1 of the pattern that should be transferred to substrate 5 and the evaluation mask 10 for the performance of evaluating exposure device 100 convertibly.Lamp optical system 3 to remaining on the mask 1 of mask mounting table 2, evaluation mask 10 throws light on.The pattern of the mask 1 thrown light on by lamp optical system 3, evaluation mask 10 is projected to substrate 5 by projection optical system 4.Substrate-placing platform 6 keeps substrate 5.Control part 7 comprises CPU, storer etc., controls the entirety (each portion of exposure device 100) of exposure device 100.Control part 7 controls the process etc. of the process such as making substrate 5 expose, the process of performance evaluating exposure device 100, the performance of adjustment exposure device 100.
Mask 1 and substrate 5 are configured at the position of optically roughly conjugation across projection optical system 4.Lamp optical system 3 forms the exposure area of circular shape or trapezoidal shape on mask 1 with uniform Illumination Distribution.From light imaging on the substrate 5 remaining on substrate-placing platform 6 via projection optical system 4 of the pattern of mask 1.Now, the optical axis of relative projection optical system 4 and drive mask mounting table 2 and this two side of substrate-placing platform 6, thus the regional exposure than the exposure region field width formed by lamp optical system 3 can be made.
Herein, with reference to Fig. 2, the structure of the comparative example as evaluation mask 10 is described.In fig. 2, in order to simplify, illustrate only the pattern required for explanation.Evaluation mask 10 shown in Fig. 2 comprises: for evaluating the pattern (key element) 11 to 19 of the 1st performance of exposure device 100 and the pattern 20 for evaluating 2nd performance different from the 1st performance of exposure device 100.In addition, specifically, the 1st performance comprises at least one party in live width (CD:CriticalDimension) and focus, and the 2nd performance comprises the distortion of projection optical system 4.
Pattern 11 to 19 is made up of such as so-called line and interval (lineandspace) pattern respectively.But, in fig. 2, carry out simplifying and use circular opening to illustrate.In order to cover the maximum exposure area of exposure device 100, pattern 11 to 19 is configured at and comprises the center of evaluation mask 10 and the entirety of periphery.In addition, pattern 20 is made up of the pattern of the opening being such as arranged multiple cross shape.But, in fig. 2, carry out simplifying and using the opening of rectangle to illustrate.In the region of the size of the degree in the effective coverage of covering projection optical system 4, pattern 20 is configured in pattern 14,15 and 16 around.Exposure device 100 is exposure devices of sweep type, so the effective coverage of projection optical system 4 is narrower than the maximum exposure area of exposure device 100.Length direction (y direction) is configured with pattern 11,12 and 13, pattern 14,15 and 16 and pattern 17,18 and 19 with staggering.Exposure device 100 exposes while evaluation mask 10 is scanned in y-direction successively.When evaluating the performance of exposure device 100, pattern 11 to 19 and pattern 20 play function as the peristome (light transmission department) of the Transmission light (passing through) made from lamp optical system 3.In addition, in a comparative example, in order to prevent the impact being subject to the light in the region beyond from the pattern of the performance for evaluating exposure device 100 when evaluating the performance of exposure device 100, the region beyond the pattern being used for the performance evaluating exposure device 100 is set to light shielding part.
In the evaluation shown in Fig. 2 with in mask 10, between pattern 11 to 19, the respective surrounding of pattern 11 to 19, the ratio (aperture opening ratio) namely comprising peristome in each subregion of pattern 11 to 19 and light shielding part are different.Such as, the subregion 15a comprising pattern (the 1st pattern) 15 also comprises pattern (the 3rd pattern) 20, so the ratio of peristome high (namely aperture opening ratio is high).On the other hand, the subregion 12a comprising pattern (the 2nd pattern) 12 does not comprise pattern 20, so the ratio of peristome low (namely aperture opening ratio is low).
When evaluating the performance of exposure device 100, via evaluation mask 10, such as, making the base plate exposure of the evaluation being coated with positive resist, and aforesaid substrate is developed.Now, the subregion 12a that the subregion 15a that aperture opening ratio is high is low compared to aperture opening ratio, the region of development is wider, and more positive resist is dissolved into developer solution, so the development power of the developer solution of the high subregion of aperture opening ratio reduces partly.Therefore, when pattern 11 to 19 is residual pattern (patterns evaluated with the light shielding part in evaluation mask 10), the live width of the resist picture corresponding with pattern 15 is thicker than the live width of the resist picture corresponding with pattern 12.In addition, be that when removing pattern (pattern evaluated with the peristome in evaluation mask 10), the live width of the resist picture corresponding with pattern 15 is thinner than the live width of the resist picture corresponding with pattern 12 at pattern 11 to 19.In addition, when negative resist, the part exposed is residual in development, so when making the base plate exposure of the evaluation being coated with negative resist and make aforesaid substrate develop, the development power of the developer solution of the subregion that aperture opening ratio is low reduces partly.Below, the situation of positive resist is described.
Fig. 3 illustrates the figure with an example of the linewidth difference (CD is poor) of each corresponding resist picture of pattern 12,15 and 18., pattern 12,15 and 18 is set to residual pattern herein, and the live width of pattern 12,15 and 18 is set to 2.0 μm.Comprise the aperture opening ratio step-down in each the subregion comprising pattern 12 and 18 in each subregion of pattern 12,15 and 18, uprise in the subregion comprising pattern 15.Therefore, as shown in Figure 3, thinner than 2.0 μm with the live width of each corresponding resist picture of pattern 12 and 18, the live width of the resist picture corresponding with pattern 15 is thicker than 2.0 μm.Like this, if due to the development power of the part of developer solution reduction caused by impact and the live width of the resist picture corresponding with each pattern of the performance for evaluating exposure device 100 change, then correctly cannot evaluate the performance of exposure device 100.Under these circumstances, adjust the performance of exposure device 100 according to its evaluation result, so the performance of exposure device 100 correctly cannot be adjusted.
Therefore, in the present embodiment, evaluate and use mask 10 as shown in Figure 4, except pattern 11 to 19 and pattern 20, also comprise dummy pattern (dummypattern) 21 and 22.In the diagram, in order to simplify, illustrate only the pattern 11 to 19 for evaluating at least one party in live width and focus, for evaluating pattern 20, the dummy pattern 21 and 22 of the distortion of projection optical system 4.But, evaluation mask 10 in present embodiment also except comprising for evaluating except (adjustment) exposure device 100, other imaging performances of projection optical system 4, pattern for the drive system of scan exposure, can also comprise the pattern for evaluating the heart far away, flash of light (flare), general view picture etc.
Evaluation is in the present embodiment with in mask 10, with the difference of the ratio (aperture opening ratio) of the peristome and light shielding part that make the per unit area comprised in each subregion of pattern 11 to 19 become ± 10% within mode, define dummy pattern 21 and 22.In the present embodiment, to make the mode that the aperture opening ratio of the per unit area comprised in each subregion of pattern 11 to 19 is equal, around pattern 11 to 13 and the surrounding of pattern 17 to 19 each in define dummy pattern 21 and 22.In other words, in order to make the area of the peristome of the per unit area comprised in each subregion of pattern 11 to 19 consistent, dummy pattern 21 and 22 is defined.In addition, dummy pattern 21 and 22 can also say it is when making substrate expose in exposure device 100 and make aforesaid substrate develop via evaluation mask 10, is formed to make to become identical with each corresponding resist picture live width separately of pattern 11 to 19.
In the diagram, the region defining the pattern 20 of distortion for evaluating projection optical system 4 represented by dashed line, represents each the region defining dummy pattern 21 and 22 with double dot dash line.As mentioned above, by the difference of the aperture opening ratio making the per unit area comprised in each subregion of pattern 11 to 19 become ± 10% within for the purpose of, define dummy pattern 21 and 22.Therefore, when evaluating the distortion of projection optical system 4, dummy pattern 21 and 22 is not used.In addition, dummy pattern 21 and 22 is set to the patterns of openings identical with the pattern 20 of the distortion for evaluating projection optical system 4 separately, but is not limited thereto.Such as, dummy pattern 21 and 22, without the need to being the patterns of openings (namely also can be with pattern 20 different patterns of openings) identical from pattern 20, also only can be formed at each the subregion comprising pattern 11 to 13 and pattern 17 to 19.
Each of Fig. 5 A to Fig. 5 C illustrate pattern 11,15 and 19 respective near, specifically comprise the enlarged drawing of each subregion 11a, 15a and 19a of pattern 11,15 and 19.The aperture opening ratio (the 1st ratio) comprising the per unit area in subregion (part 1 region) 15a of pattern (the 1st pattern) 15 is equal with the aperture opening ratio (the 2nd ratio) comprising the per unit area in part 2 region (part 2 region) 11a of pattern (the 2nd pattern) 11.Similarly, the aperture opening ratio comprising the per unit area in the subregion 15a of pattern 15 is equal with the aperture opening ratio (the 2nd ratio) comprising the per unit area in part 2 region (part 2 region) 19a of pattern (the 2nd pattern) 19.
In the present embodiment, the subregion 11a comprising pattern 11 is the region of the circle centered by pattern 11, and the subregion 15a comprising pattern 15 is the region of the circle centered by pattern 15.Similarly, the subregion 19a comprising pattern 19 is the region of the circle centered by pattern 19.In addition, consider the impact (changing the exposure area on substrate) when the conditions of exposure such as focus, exposure evaluated in-service evaluation mask 10 changes and exposes, subregion 11a, 15a and 19b are set to the region of above below the 80mm of diameter 5mm.
Next, illustrate that in-service evaluation mask 10 is to evaluate the process (evaluation method) when live width and focus.As mentioned above, control part 7 controls each several part of exposure device 100 on the whole, thus carries out above-mentioned process.
First, the condition of exposure is exported.Specifically, evaluation mask 10 is held in mask mounting table 2, via evaluation mask 10 (pattern 11 to 19), for the position making the position of the X-direction be coated with on the substrate of resist there occurs skew, expose while change focus and exposure.Then, aforesaid substrate is developed, measure the live width with each the corresponding resist picture of the pattern 11 to 19 be formed on substrate, according to its measurement result, obtain the most suitable exposure of pinpointed focus.
Next, with most suitable exposure, via evaluation mask 10 (pattern 11 to 19), for the position making the position of the X-direction be coated with on the substrate of resist there occurs skew, bifocally to expose changing simultaneously.Then, aforesaid substrate is developed, measure the live width with each the corresponding resist picture of the pattern 11 to 19 be formed on substrate, according to its measurement result, obtain the relation of focus and live width.
Next, according to the relation of focus and live width, evaluate live width and focus.Specifically, obtain the common focus of the scope meeting this whole allowed live width of pattern 11 to 19, be set to the depth of focus (DOF:DepthofFocus) of exposure device 100.In addition, the skew of the live width at whole average pinpointed focus place of pattern 11 to 19 is set to live width homogeneity.
According to the present embodiment, by using the evaluation mask 10 shown in Fig. 4, the impact of the development caused by difference of the aperture opening ratio of the per unit area comprised in each subregion of pattern 11 to 19 can not be subject to, with the performance of high precision evaluation exposure device 100.
In addition, in the present embodiment, the performance of the exposure device 100 that have rated according to using the evaluation mask 10 shown in Fig. 4, the performance of adjustment exposure device 100.In addition, the adjustment of the performance of exposure device 100 comprises and such as adjusts to adjust live width the optical element etc. that the uneven illumination of lamp optical system 3 is even, adjust projection optical system 4 to adjust focus.Thereby, it is possible to do not adjust the performance of exposure device 100 by the impact of above-mentioned development, the exposure device 100 with excellent performance can be provided.Therefore, exposure device 100 can provide high handling capacity and the equipment (liquid crystal display, semiconductor equipment etc.) of the good high-quality of economy.
The manufacture method of the article in embodiments of the present invention is applicable to such as manufacture the article such as liquid crystal display.Above-mentioned manufacture method comprises use exposure device 100 and makes to be coated with the operation of the base plate exposure of emulsion and make the operation of the substrate development exposed.In addition, then above-mentioned formation process, above-mentioned manufacture method can comprise other known operations (oxidation, film forming, evaporation, doping, planarization, etching, resist stripping, cutting, joint, encapsulation etc.).The manufacture method of the article in present embodiment, compared in the past, is favourable at least 1 of the performance of article, quality, productivity and production cost.
Above, describe preferred embodiment of the present invention, but the invention is not restricted to these embodiments, various distortion and change can be carried out in the scope of its main idea.
Associatedly describe the present invention with illustrative embodiment, but be to be understood that and the invention is not restricted to disclosed illustrative embodiment.Ensuing claims should be endowed the widest explanation, to comprise all variation and the equivalent of structure and function.
Claims (13)
1. an evaluation mask, makes to use during the performance of the exposure device of base plate exposure in evaluation, it is characterized in that having:
1st pattern and the 2nd pattern, for evaluating the 1st performance of described exposure device; And
Dummy pattern, for the peristome and light shielding part that make the per unit area comprised in the part 1 region of described 1st pattern the 1st ratio, become with the difference comprising the peristome of the per unit area in the part 2 region of described 2nd pattern and the 2nd ratio of light shielding part ± 10% within.
2. evaluation mask according to claim 1, is characterized in that,
Described dummy pattern is formed as described 1st ratio and the described 2nd is in equal proportions.
3. evaluation mask according to claim 1, is characterized in that,
Described part 1 region is the region of the circle centered by described 1st pattern,
Described part 2 region is the region of the circle centered by described 2nd pattern.
4. evaluation mask according to claim 3, is characterized in that,
Described part 1 region and described part 2 region are the regions of above below the 80mm of diameter 5mm.
5. evaluation mask according to claim 1, is characterized in that,
There is the 3rd pattern for evaluating 2nd performance different from described 1st performance of described exposure device,
Described 3rd pattern is configured at around described 1st pattern in described part 1 region,
Described dummy pattern is configured at around described 2nd pattern in described part 2 region.
6. evaluation mask according to claim 5, is characterized in that,
Described 1st pattern, described 2nd pattern, described 3rd pattern and described dummy pattern are patterns of openings.
7. evaluation mask according to claim 6, is characterized in that,
Described dummy pattern is formed by the patterns of openings identical with described 3rd pattern.
8. evaluation mask according to claim 5, is characterized in that,
Described 1st performance comprises at least one party in live width and focus,
Described 2nd performance comprises distortion.
9. an evaluation mask, makes to use during the performance of the exposure device of base plate exposure in evaluation, it is characterized in that having:
1st pattern and the 2nd pattern, for evaluating the 1st performance of described exposure device; And
Dummy pattern, for when making the substrate being coated with resist expose in described exposure device and make this substrate carry out development via described evaluation mask, making the live width corresponding to the resist picture of described 1st pattern on this substrate and becoming identical corresponding to the live width of the resist picture of described 2nd pattern.
10. an evaluation mask, makes to use during the performance of the exposure device of base plate exposure in evaluation, it is characterized in that having:
1st pattern and the 2nd pattern, for evaluating the 1st performance of described exposure device; And
Dummy pattern, for making the area of the peristome of the per unit area comprised in the part 1 region of described 1st pattern consistent with the area of the peristome of the per unit area in the part 2 region comprising described 2nd pattern.
11. 1 kinds of evaluation methods, evaluate the performance making the exposure device of base plate exposure, it is characterized in that having:
Described exposure device is used to make to be coated with the operation of the base plate exposure of resist via evaluation mask;
Make the operation of the described substrate development exposed; And
The operation of the performance of described exposure device is evaluated according to the resist picture on the described substrate developed,
Described evaluation mask is evaluation mask according to claim 1.
12. 1 kinds of exposure devices, make base plate exposure, it is characterized in that, have:
Mask mounting table, interchangeably can keep having the mask of the pattern that should be transferred to described substrate and the evaluation mask for the performance of evaluating described exposure device; And
Control part, according to the performance of the described exposure device using described evaluation mask to evaluate, controls the adjustment of the performance of described exposure device,
Described evaluation mask is evaluation mask according to claim 1.
The manufacture method of 13. 1 kinds of article, is characterized in that, has:
The exposure device described in claim 12 is used to make the operation of base plate exposure; And
Make the operation of the described substrate development exposed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014173007A JP6415186B2 (en) | 2014-08-27 | 2014-08-27 | Evaluation mask, evaluation method, exposure apparatus, and article manufacturing method |
| JP2014-173007 | 2014-08-27 |
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| Publication Number | Publication Date |
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| CN105388699A true CN105388699A (en) | 2016-03-09 |
| CN105388699B CN105388699B (en) | 2019-11-01 |
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| CN201510522421.5A Active CN105388699B (en) | 2014-08-27 | 2015-08-24 | Evaluation mask, evaluation method, the manufacturing method of exposure device and article |
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| JP (1) | JP6415186B2 (en) |
| KR (1) | KR101952990B1 (en) |
| CN (1) | CN105388699B (en) |
| TW (1) | TWI597562B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117406546A (en) * | 2023-12-14 | 2024-01-16 | 合肥晶合集成电路股份有限公司 | Mask plate and pattern correction method thereof |
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| JP2012078552A (en) * | 2010-10-01 | 2012-04-19 | Toppan Printing Co Ltd | Photomask producing method |
| CN102819182A (en) * | 2011-06-10 | 2012-12-12 | Hoya株式会社 | Photo mask base plate and manufacturing method thereof, photo mask manufacturing method, and pattern transfer method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117406546A (en) * | 2023-12-14 | 2024-01-16 | 合肥晶合集成电路股份有限公司 | Mask plate and pattern correction method thereof |
| CN117406546B (en) * | 2023-12-14 | 2024-04-12 | 合肥晶合集成电路股份有限公司 | Mask plate and pattern correction method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160025457A (en) | 2016-03-08 |
| CN105388699B (en) | 2019-11-01 |
| JP6415186B2 (en) | 2018-10-31 |
| KR101952990B1 (en) | 2019-02-27 |
| TW201608330A (en) | 2016-03-01 |
| JP2016048299A (en) | 2016-04-07 |
| TWI597562B (en) | 2017-09-01 |
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