CN105388699B - Evaluation mask, evaluation method, the manufacturing method of exposure device and article - Google Patents
Evaluation mask, evaluation method, the manufacturing method of exposure device and article Download PDFInfo
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- CN105388699B CN105388699B CN201510522421.5A CN201510522421A CN105388699B CN 105388699 B CN105388699 B CN 105388699B CN 201510522421 A CN201510522421 A CN 201510522421A CN 105388699 B CN105388699 B CN 105388699B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Abstract
The present invention relates to a kind of evaluation mask, evaluation method, the manufacturing methods of exposure device and article.Evaluation mask of the invention is used when evaluation makes the performance of the exposure device of base plate exposure comprising: the 1st pattern and the 2nd pattern, for evaluating the 1st performance of the exposure device；And dummy pattern, for make include per unit area in the part 1 region of the 1st pattern opening portion and light shielding part the 1st ratio, with include the 2nd pattern part 2 region in the opening portion of per unit area and the difference of the 2nd ratio of light shielding part become within ± 10%.
Description
Technical field
The present invention relates to evaluate exposure device performance when use evaluation mask, evaluation method, exposure device with
And the manufacturing method of article.
Background technique
Exposure device arrives the pattern of mask or reticle mask (reticle) via projection optical system projection (imaging)
It is coated with the substrate (semiconductor wafer, glass plate) of the emulsion such as resist and transfers pattern on substrate.In recent years, it scans
The exposure device of type, so-called step-scan mode exposure device become mainstream, the exposure device of the sweep type is to the one of mask
Partial region is illuminated, and for projection optical system, is scanned to mask and substrate and is made base plate exposure.
In recent years, along with the microminiaturization of equipment, it is desirable that the high performance of exposure device, so needing in-service evaluation with covering
Mould comes with the performance of high precision evaluation exposure device.In above-mentioned evaluation mask, such as, it is desirable that for evaluating exposure device
The function of imaging performance, the function of imaging performance for evaluating the projection optical system on exposure device, use for adjusting
In the function etc. of the drive system of scan exposure.Particularly, for the evaluation of liquid crystal exposure apparatus mask large and expensive, institute
To require multiple functions.Herein, the imaging performance of exposure device includes focus, line width (CD:Critical
Dimension), be distorted, be overlapped (overlay) etc..The imaging performance of projection optical system includes the effective of projection optical system
Focus (image planes, astigmatism, astigmatism (astigmatism)), distortion in region etc..In addition, being used for the drive system of scan exposure
Adjustment include: the mask mounting table for keeping mask and movement, the adjustment for keeping substrate and the substrate-placing platform of movement；To mask
On the part that does not expose carry out shading anti-dazzling screen (masking blade) position adjustment etc..
In such evaluation mask, the precision for improving above-mentioned function is also required.Particularly, along with imaging performance
The effective coverage of High precision and projection optical system narrows, in order in resolution ratio evaluation effective coverage as in the past
Imaging performance, such as need to be configured to the pattern of evaluation distortion than in the past thinner spacing.
When evaluating the imaging performance of exposure device, projection optical system, make to be coated with against corrosion via evaluation mask
The base plate exposure of agent, makes aforesaid substrate develop, and measures resist picture corresponding with the pattern of evaluation mask with measuring device.In
In evaluation mask, in order to prevent by the light transmission from the imaging performance for evaluating exposure device, projection optical system
The influence of the light in the region other than type pattern, the region other than light transmission type pattern are set as light shielding part.Wherein, in evaluation mask
In, generally, the ratio of the pattern configured with multiple types, the light shielding part around light transmission type pattern and above-mentioned pattern is (following
Referred to as " aperture opening ratio ") it is different for each region on substrate.Herein, for example, it is contemplated that by the against corrosion of the part of illuminated light
The positive resist that agent is removed is for the case where evaluating.In this case, the positive resist development on the substrate for making to have exposed
When, the high region of the aperture opening ratio region low compared to aperture opening ratio, the region of development is wider, and more positive resists are dissolved into development
Liquid, so the development power of the developer solution in the region locally reduces.In this case, development of the resist picture by part
Influence caused by the reduction of power (such as variation of CD etc.), so the performance of exposure device can not be evaluated correctly.Therefore, as
The reply for the developing apparatus side for making substrate develop proposes in Japanese Unexamined Patent Publication 2006-319350 bulletin and inhibits developer solution
The technology that power of developing reduces.
But the imaging performance of device, projection optical system is exposed as checking in the setting of exposure device
Evaluation, but developing apparatus is different according to the setting destination of exposure device, must use sometimes do not carry out patent document 1 that
The developing apparatus of the reply of sample.
In addition, it is also contemplated that following technology: considering influence caused by the reduction of development power to design (manufacture) evaluation and use mask.
But influence caused by the reduction for power of developing is different according to the adjustment state of developing apparatus, so must be in exposure device
The influence is confirmed when setting to manufacture evaluation mask, so being unpractical.
Summary of the invention
The present invention, which is provided with, to be conducive to the evaluation mask of the performance of high precision evaluation exposure device.
Evaluation as 1st aspect of the invention with mask is made when evaluation makes the performance of the exposure device of base plate exposure
Evaluation mask is comprising: the 1st pattern and the 2nd pattern, for evaluating the 1st property of the exposure device
Energy；And dummy pattern, for make include per unit area in the part 1 region of the 1st pattern opening portion and screening
1st ratio in light portion, with include the 2nd pattern part 2 region in per unit area opening portion and light shielding part
The difference of 2nd ratio becomes within ± 10%.
Evaluation as 2nd aspect of the invention with mask is made when evaluation makes the performance of the exposure device of base plate exposure
Evaluation mask is comprising: the 1st pattern and the 2nd pattern, for evaluating the 1st property of the exposure device
Energy；And dummy pattern, for making the substrate for being coated with resist in the exposure device via the evaluation mask
Middle exposure and when the substrate being made to have carried out development, make the resist picture corresponding to the 1st pattern on the substrate line width and
The line width of resist picture corresponding to the 2nd pattern becomes identical.
Evaluation as 3rd aspect of the invention with mask is made when evaluation makes the performance of the exposure device of base plate exposure
Evaluation mask is comprising: the 1st pattern and the 2nd pattern, for evaluating the 1st property of the exposure device
Energy；And dummy pattern, for make include the opening portion of per unit area in the part 1 region of the 1st pattern face
Product is consistent with the area of opening portion of per unit area in the part 2 region including the 2nd pattern.
Evaluation method as the 4th aspect of the invention is the evaluation side of the performance for the exposure device that evaluation makes base plate exposure
Method is comprising: make the base plate exposure for being coated with resist via evaluation mask using the exposure device
Process；The process for making the substrate exposed develop；And it is evaluated according to the resist picture on the substrate to have developed
The process of the performance of the exposure device, the evaluation are above-mentioned evaluation masks with mask.
Exposure device as 5th aspect of the invention be make base plate exposure exposure device comprising:
Mask mounting table convertibly keeps the mask with the pattern that should be transferred to the substrate and for evaluating the exposure dress
The evaluation mask for the performance set；And control unit, according to the exposure dress for using the evaluation to be evaluated with mask
The performance set, controls the adjustment of the performance of the exposure device, and the evaluation is above-mentioned evaluation mask with mask.
The manufacturing method of article as the 6th aspect of the invention is characterized in that, comprising: is come using above-mentioned exposure device
Make the process of base plate exposure；And the process for making the substrate exposed develop.
The preferred embodiment illustrated and referring to the drawings, further purpose or its other party of the invention
Face will be apparent from.
Detailed description of the invention
Fig. 1 is the skeleton diagram for being shown as the structure of exposure device of one aspect of the present invention.
Fig. 2 is the skeleton diagram for being shown as the structure of comparative example of evaluation mask.
Fig. 3 is an example for showing the linewidth difference of resist picture corresponding with the 1st pattern of evaluation mask shown in Fig. 2
The figure of son.
Fig. 4 is the skeleton diagram for showing the structure of the evaluation mask in present embodiment.
Fig. 5 A to Fig. 5 C is the enlarged drawing for showing the partial region of the pattern including evaluation mask shown in Fig. 4.
Specific embodiment
Hereinafter, illustrating the preferred embodiments of the present invention referring to attached drawing.In addition, in the various figures, it is additional to the same part
Same reference number, the repetitive description thereof will be omitted.
Fig. 1 is the skeleton diagram for being shown as the structure of exposure device 100 of one aspect of the present invention.Exposure device 100
Be the pattern of mask is transferred to substrate, i.e., make the lithographic equipment of base plate exposure.Exposure device 100 include mask mounting table 2,
Lamp optical system 3, projection optical system 4, substrate-placing platform 6 and control unit 7.
Mask mounting table 2 convertibly keeps the mask 1 with the pattern that should be transferred to substrate 5 and for evaluating exposure
The evaluation of the performance of device 100 mask 10.Lamp optical system 3 to the mask 1 for being maintained at mask mounting table 2, evaluation is with covering
Mould 10 is illuminated.Projection optical system 4 is by the mask 1 illuminated by lamp optical system 3, the pattern of evaluation mask 10
Project to substrate 5.Substrate-placing platform 6 keeps substrate 5.Control unit 7 includes CPU, memory etc., controls the whole of exposure device 100
Body (each portion of exposure device 100).The performance that control unit 7 controls the processing for for example exposing substrate 5, evaluates exposure device 100
Processing, adjust the processing of performance etc. of exposure device 100.
Mask 1 and substrate 5 are configured at the position being optically substantially conjugated across projection optical system 4.Illumination optical system
System 3 forms the exposure area of circular shape or trapezoidal shape with uniform Illumination Distribution on mask 1.Figure from mask 1
The light of case is imaged on the substrate 5 for being maintained at substrate-placing platform 6 via projection optical system 4.At this point, opposite projection optics system
The optical axis of system 4 and drive mask mounting table 2 and substrate-placing platform 6 this two side, so as to make than by 3 shape of lamp optical system
At exposure region field width regional exposure.
Herein, referring to Fig. 2, illustrate the structure of the comparative example as evaluation mask 10.In Fig. 2, to put it more simply, only showing
Pattern required for explanation is gone out.Evaluation mask 10 shown in Fig. 2 includes: the 1st performance for evaluating exposure device 100
Pattern (element) 11 to 19 and the pattern 20 for evaluating 2nd performance different from the 1st performance of exposure device 100.Separately
Outside, specifically, the 1st performance includes at least one party in line width (CD:Critical Dimension) and focus, the 2nd property
It can include the distortion of projection optical system 4.
Pattern 11 to 19 is made of for example so-called line and interval (line and space) pattern respectively.But in Fig. 2
In, simplify and shown with circular opening.In order to cover the maximum exposure area of exposure device 100, pattern 11 to 19
It is configured at the entirety at center and periphery including evaluation mask 10.In addition, pattern 20 is by being for example arranged multiple cross
The pattern of the opening of shape is constituted.But in Fig. 2, simplify and shown with the opening of rectangle.In covering projection optical system
In the region of the size of the degree of 4 effective coverage, pattern 20 is configured around pattern 14,15 and 16.Exposure device 100
It is the exposure device of sweep type, so maximum exposure area of the effective coverage of projection optical system 4 than exposure device 100
It is narrow.It is configured with pattern 11,12 and 13, pattern 14,15 and 16 and pattern 17,18 and with being staggered on length direction (direction y)
19.Exposure device 100 is exposed evaluation successively while scanning in y-direction with mask 10.In evaluation exposure device 100
Performance when, (light is saturating as the opening portion of the light transmission (passing through) made from lamp optical system 3 for pattern 11 to 19 and pattern 20
Penetrate portion) it functions.In addition, in a comparative example, in order to prevent when evaluating the performance of exposure device 100 by from for commenting
The influence of the light in the region other than the pattern of the performance of valence exposure device 100 will be used to evaluate the figure of the performance of exposure device 100
Region other than case is set as light shielding part.
Evaluation shown in Fig. 2 is in mask 10, and between pattern 11 to 19, the respective surrounding of pattern 11 to 19 is wrapped
The ratio (aperture opening ratio) for including the opening portion and light shielding part in each partial region of pattern 11 to 19 is different.E.g., including figure
The partial region 15a of case (the 1st pattern) 15 further includes pattern (the 3rd pattern) 20, so high (the i.e. aperture opening ratio of the ratio of opening portion
It is high).On the other hand, the partial region 12a including pattern (the 2nd pattern) 12 does not include pattern 20, so the ratio of opening portion is low
(i.e. aperture opening ratio is low).
When evaluating the performance of exposure device 100, via evaluation mask 10, for example, making to be coated with commenting for positive resist
The base plate exposure of valence, and aforesaid substrate is made to develop.At this point, the portion low compared to aperture opening ratio partial region 15a that aperture opening ratio is high
The region of subregion 12a, development are wider, and more positive resists are dissolved into developer solution, so the high partial region of aperture opening ratio
The development power of developer solution locally reduces.It therefore, is residual pattern (with the light shielding part in evaluation mask 10 in pattern 11 to 19
The pattern of evaluation) in the case where, and the corresponding resist picture of pattern 15 line width than resist picture corresponding with pattern 12 line
It is broad and rough.In addition, in the case where pattern 11 to 19 is to remove pattern (pattern evaluated with the opening portion in evaluation mask 10),
And the line width of the corresponding resist picture of pattern 15 is thinner than the line width of resist picture corresponding with pattern 12.In addition, in negative resist
In the case where, the part exposed remains in development, so making the base plate exposure for the evaluation for being coated with negative resist simultaneously
When aforesaid substrate being made to develop, the development power of the developer solution of the low partial region of aperture opening ratio is locally reduced.Hereinafter, explanation is just against corrosion
The case where agent.
Fig. 3 is to show and an example of the linewidth difference (CD is poor) of each corresponding resist picture of pattern 12,15 and 18
The figure of son.Herein, pattern 12,15 and 18 is set as residual pattern, and the line width of pattern 12,15 and 18 is set as 2.0 μm.
Aperture opening ratio in each partial region including pattern 12,15 and 18 is in each part area including pattern 12 and 18
It is lower in domain, is got higher in the partial region for including pattern 15.Therefore, as shown in figure 3, with pattern 12 and 18 it is each corresponding
Resist picture line width than 2.0 μm thin, the line width of resist picture corresponding with pattern 15 is slightly than 2.0 μm.In this way, if due to
Influence caused by the reduction of the development power of the part of developer solution and it is corresponding with each pattern of the performance for evaluating exposure device 100
The line width of resist picture change, then can not correctly evaluate the performance of exposure device 100.In this case, root
The performance of exposure device 100 is adjusted according to its evaluation result, so the performance of exposure device 100 can not be adjusted correctly.
Therefore, in the present embodiment, evaluation mask 10 is as shown in figure 4, other than pattern 11 to 19 and pattern 20,
It further include dummy pattern (dummy pattern) 21 and 22.In Fig. 4, to put it more simply, illustrate only for evaluate line width with
And the pattern 11 to 19 of at least one party in focus, the pattern 20 of distortion for evaluating projection optical system 4, dummy pattern 21
And 22.But the evaluation mask 10 in present embodiment can also be in addition to including for evaluating (adjustment) exposure device
It 100, further include for commenting other than other imaging performances, the pattern for the drive system of scan exposure of projection optical system 4
Valence telecentricity, flash of light (flare), the pattern for getting a bird's eye view image etc..
Evaluation in the present embodiment is in mask 10, so as to include in each partial region of pattern 11 to 19
The difference of the ratio (aperture opening ratio) of the opening portion and light shielding part of per unit area becomes the mode within ± 10%, forms illusory
Pattern 21 and 22.In the present embodiment, so as to include the per unit area in each partial region of pattern 11 to 19
The equal mode of aperture opening ratio, form illusory figure in each around pattern 11 to 13 and around pattern 17 to 19
Case 21 and 22.In other words, in order to make include per unit area in each partial region of pattern 11 to 19 opening portion
Area it is consistent, form dummy pattern 21 and 22.In addition, dummy pattern 21 and 22, which might also say that, to be used via evaluation
It is each right with pattern 11 to 19 in order to make when mask 10 exposes substrate in exposure device 100 and aforesaid substrate is made to develop
The resist answered is formed as respective line width becomes identical.
In Fig. 4, the region for foring the pattern 20 of the distortion for evaluating projection optical system 4 is represented by dashed line, uses
Double dot dash line indicates to form each region of dummy pattern 21 and 22.As described above, so as to including pattern 11 to 19
For the purpose of the difference of the aperture opening ratio of per unit area in each partial region becomes within ± 10%, dummy pattern is formd
21 and 22.Therefore, when evaluating the distortion of projection optical system 4, dummy pattern 21 and 22 is not used.In addition, illusory figure
It case 21 and 22 is respectively set as and is used to evaluate the identical patterns of openings of the pattern 20 of distortion of projection optical system 4, but is unlimited
In this.(it is also possible to different with pattern 20 for example, dummy pattern 21 and 22 is needed not to be from the identical patterns of openings of pattern 20
Patterns of openings), can also only be formed in each partial region including pattern 11 to 13 and pattern 17 to 19.
Fig. 5 A to Fig. 5 C it is each be show pattern 11,15 and 19 it is respective nearby, specifically include pattern 11,15
And 19 each partial region 11a, 15a and 19a enlarged drawing.Partial region (including pattern (the 1st pattern) 15
1 partial region) per unit area in 15a aperture opening ratio (the 1st ratio) and the part 2 area including pattern (the 2nd pattern) 11
The aperture opening ratio (the 2nd ratio) of per unit area in domain (part 2 region) 11a is equal.Similarly, the part including pattern 15
The aperture opening ratio of per unit area in the 15a of region and part 2 region (part 2 region) including pattern (the 2nd pattern) 19
The aperture opening ratio (the 2nd ratio) of per unit area in 19a is equal.
In the present embodiment, the partial region 11a including pattern 11 is the circular region centered on pattern 11, packet
The partial region 15a for including pattern 15 is circular region centered on pattern 15.Similarly, the partial region including pattern 19
19a is the circular region centered on pattern 19.Additionally, it is contemplated that the focus evaluated with mask 10 to in-service evaluation, exposure
Influence (change exposure area substrate on) of the conditions of exposures such as amount when being changed and being exposed, by partial region 11a,
15a and 19b is set as the region below the above 80mm of diameter 5mm.
Next, the processing (evaluation method) when illustrating in-service evaluation and evaluated with mask 10 line width and focus.As above
Described, control unit 7 controls each section of exposure device 100 on the whole, to carry out above-mentioned processing.
Firstly, the condition of output light exposure.Specifically, evaluation mask 10 is held in mask mounting table 2, via commenting
Valence is with mask 10 (pattern 11 to 19), for the portion for deviating the position for the X-direction being coated on the substrate of resist
Position is exposed while changing focus and light exposure.Then, so that aforesaid substrate is developed, measure and be formed on substrate
The line width of each corresponding resist picture of pattern 11 to 19 finds out the most suitable exposure of pinpointed focus according to its measurement result
Light quantity.
It is against corrosion for making to be coated with via evaluation with mask 10 (pattern 11 to 19) next, with most suitable light exposure
The position that the position of X-direction on the substrate of agent is deviated is exposed while changing focus.Then, make above-mentioned
Substrate development, measure with the line width of each corresponding resist picture for the pattern 11 to 19 being formed on substrate, according to its measurement
As a result, finding out the relationship of focus and line width.
Next, evaluating line width and focus according to the relationship of focus and line width.Meet pattern 11 specifically, finding out
To the common focus of 19 this range of line widths all allowed, be set as exposure device 100 the depth of focus (DOF:
Depth of Focus).In addition, it is equal that the offset of the line width at whole average pinpointed focus of pattern 11 to 19 is set as line width
Even property.
It according to the present embodiment, can not be by including pattern 11 to 19 by using evaluation shown in Fig. 4 mask 10
Each partial region in per unit area aperture opening ratio difference caused by development influence, exposed with high precision evaluation
The performance of electro-optical device 100.
In addition, in the present embodiment, according to the exposure device for using evaluation mask 10 shown in Fig. 4 and having rated
100 performance adjusts the performance of exposure device 100.In addition, the adjustment of the performance of exposure device 100 is adjusted including for example
Line width and the uneven illumination for adjusting lamp optical system 3 is even, the optical element of projection optical system 4 is adjusted to adjust focus
Deng.Thereby, it is possible to not influenced and adjusted the performance of exposure device 100 by above-mentioned development, it is capable of providing with excellent performance
Exposure device 100.Therefore, exposure device 100 is capable of providing the equipment (liquid of high handling capacity and the good high-quality of economy
Crystal display device, semiconductor equipment etc.).
The manufacturing method of article in embodiments of the present invention is suitable for for example manufacturing liquid crystal display and other items.On
Stating manufacturing method includes being made the process for the base plate exposure for being coated with emulsion using exposure device 100 and being made to have exposed
The process of substrate development.In addition, then above-mentioned formation process, above-mentioned manufacturing method may include other known process (oxidation,
Film forming, vapor deposition, doping, planarization, etching, resist removing, cutting, engagement, encapsulation etc.).Article in present embodiment
Manufacturing method is advantageous compared to previous in terms of at least one of the performance of article, quality, productivity and production cost.
It this concludes the description of the preferred embodiments of the present invention, but the present invention is not restricted to these embodiment, it can be at it
Various modifications and change are carried out in the range of main idea.
Associatedly the present invention is described with embodiment illustrated, it is to be understood that the present invention is not limited to disclosed
Embodiment illustrated.Next claims should be endowed widest explanation, to include the institute of structure and function
There are variation and equivalent.
Claims (10)
1. it is a kind of evaluation use mask, evaluation make base plate exposure exposure device performance when use comprising:
1st pattern and the 2nd pattern, for evaluating the 1st performance of the exposure device；
3rd pattern, for evaluating 2nd performance different from the 1st performance of the exposure device；And
Dummy pattern, for make include per unit area in the part 1 region of the 1st pattern opening portion and light shielding part
The 1st ratio, with include the 2nd pattern part 2 region in per unit area opening portion and light shielding part the 2nd ratio
The difference of example becomes within ± 10%,
3rd pattern is configured at around the 1st pattern in the part 1 region,
The dummy pattern is configured at around the 2nd pattern in the part 2 region.
2. evaluation mask according to claim 1, which is characterized in that
The dummy pattern is formed as that the 1st ratio and the described 2nd is made to be in equal proportions.
3. evaluation mask according to claim 1, which is characterized in that
The part 1 region is the circular region centered on the 1st pattern,
The part 2 region is the circular region centered on the 2nd pattern.
4. evaluation mask according to claim 3, which is characterized in that
The part 1 region and the part 2 region are the regions below the above 80mm of diameter 5mm.
5. evaluation mask according to claim 1, which is characterized in that
1st pattern, the 2nd pattern, the 3rd pattern and the dummy pattern are patterns of openings.
6. evaluation mask according to claim 5, which is characterized in that
The dummy pattern is formed by patterns of openings identical with the 3rd pattern.
7. evaluation mask according to claim 1, which is characterized in that
1st performance includes at least one party in line width and focus,
2nd performance includes distortion.
8. a kind of evaluation method, evaluation make the performance of the exposure device of base plate exposure comprising:
Make the process for the base plate exposure for being coated with resist via evaluation mask using the exposure device；
The process for making the substrate exposed develop；And
The process for evaluating the performance of the exposure device according to the resist picture on the substrate to have developed,
The evaluation is evaluation mask described in claim 1 with mask.
9. a kind of exposure device, make base plate exposure comprising:
Mask mounting table can interchangeably keep the mask with the pattern that should be transferred to the substrate and described for evaluating
The evaluation mask of the performance of exposure device；And
Control unit controls the exposure according to the performance for the exposure device for using the evaluation to be evaluated with mask
The adjustment of the performance of device,
The evaluation is evaluation mask described in claim 1 with mask.
10. a kind of manufacturing method of the article based on the substrate to have developed comprising:
Make the process of base plate exposure using exposure device as claimed in claim 9；And
The process for making the substrate exposed develop.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014173007A JP6415186B2 (en) | 2014-08-27 | 2014-08-27 | Evaluation mask, evaluation method, exposure apparatus, and article manufacturing method |
| JP2014-173007 | 2014-08-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105388699A CN105388699A (en) | 2016-03-09 |
| CN105388699B true CN105388699B (en) | 2019-11-01 |
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| CN201510522421.5A Active CN105388699B (en) | 2014-08-27 | 2015-08-24 | Evaluation mask, evaluation method, the manufacturing method of exposure device and article |
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| Country | Link |
|---|---|
| JP (1) | JP6415186B2 (en) |
| KR (1) | KR101952990B1 (en) |
| CN (1) | CN105388699B (en) |
| TW (1) | TWI597562B (en) |
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| CN117406546B (en) * | 2023-12-14 | 2024-04-12 | 合肥晶合集成电路股份有限公司 | Mask plate and pattern correction method thereof |
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| JP2002015992A (en) * | 2000-04-25 | 2002-01-18 | Nikon Corp | Lithographic process, evaluating method for lithography system, adjusting method for substrate-processing apparatus, lithography system, method and apparatus for exposure, and method for measuring condition of photosensitive material |
| JP2003007591A (en) * | 2001-06-21 | 2003-01-10 | Nikon Corp | Method for evaluating aberration of charged particle beam optical system, method for adjusting charged particle beam device, charged particle beam exposing method, method for evaluating astigmatism and evaluation pattern |
| JP2003142367A (en) * | 2001-10-31 | 2003-05-16 | Sony Corp | Evaluation mask and method for evaluating mask |
| JP2003318083A (en) * | 2002-04-22 | 2003-11-07 | Nikon Corp | Optical characteristic measuring method, adjusting method of optical system, exposing method and device, and device manufacturing method |
| JP4051240B2 (en) * | 2002-07-31 | 2008-02-20 | 富士通株式会社 | Test photomask, flare evaluation method, and flare correction method |
| JP4005870B2 (en) * | 2002-08-02 | 2007-11-14 | 株式会社東芝 | Mask, mask creation method, and semiconductor device manufacturing method |
| JP5164409B2 (en) * | 2006-09-28 | 2013-03-21 | 富士フイルム株式会社 | PHOTOCURABLE COMPOSITION, COLOR FILTER, ITS MANUFACTURING METHOD, AND SOLID-STATE IMAGING DEVICE |
| DE102008019341B4 (en) * | 2008-04-15 | 2020-09-24 | Carl Zeiss Smt Gmbh | Method for the analysis of masks for photolithography |
| JP2012047937A (en) * | 2010-08-26 | 2012-03-08 | Nsk Technology Co Ltd | Exposure evaluation mask and exposure evaluation method |
| JP2012078552A (en) * | 2010-10-01 | 2012-04-19 | Toppan Printing Co Ltd | Photomask producing method |
| JP5497693B2 (en) * | 2011-06-10 | 2014-05-21 | Ｈｏｙａ株式会社 | Photomask substrate, photomask substrate manufacturing method, photomask manufacturing method, and pattern transfer method |
-
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- 2014-08-27 JP JP2014173007A patent/JP6415186B2/en active Active
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- 2015-06-22 TW TW104119998A patent/TWI597562B/en active
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| Publication number | Publication date |
|---|---|
| KR20160025457A (en) | 2016-03-08 |
| JP6415186B2 (en) | 2018-10-31 |
| KR101952990B1 (en) | 2019-02-27 |
| CN105388699A (en) | 2016-03-09 |
| TW201608330A (en) | 2016-03-01 |
| JP2016048299A (en) | 2016-04-07 |
| TWI597562B (en) | 2017-09-01 |
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