CN108170009B - Exposure equipment, exposure method, color film substrate and manufacturing method thereof - Google Patents
Exposure equipment, exposure method, color film substrate and manufacturing method thereof Download PDFInfo
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- CN108170009B CN108170009B CN201810004276.5A CN201810004276A CN108170009B CN 108170009 B CN108170009 B CN 108170009B CN 201810004276 A CN201810004276 A CN 201810004276A CN 108170009 B CN108170009 B CN 108170009B
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- mask plate
- parallel light
- rotatable mirror
- line width
- opening
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
Abstract
The invention discloses exposure equipment, which comprises a rotatable mirror, wherein the rotatable mirror exposes a photoresist on a substrate through a parallel light beam by penetrating through an opening part of a mask plate arranged below the rotatable mirror, and the rotatable mirror rotates to adjust the incident direction of the parallel light beam incident to the surface of the mask plate. The exposure equipment is simple in structure and easy to operate, and can obtain photoresist patterns with different line widths under the condition that the mask plate is not replaced, so that the using efficiency of the mask plate is greatly improved, and the higher production cost caused by replacement of the mask plate when the photoresist patterns with different line widths are obtained is reduced. The invention also discloses an exposure method, a manufacturing method of the color film substrate and the color film substrate.
Description
Technical Field
The present invention relates to the field of lithography. More particularly, the invention relates to an exposure apparatus, an exposure method, a color film substrate and a manufacturing method thereof.
Background
In the manufacturing process of a traditional substrate, in the photolithography process, parallel light beams vertically penetrate through an opening of a mask plate by using an exposure device, exposure is performed on photoresist to be exposed on the substrate, and a required photoresist pattern is further formed by development. Therefore, in the conventional exposure method, only one photoresist pattern with a fixed line width can be obtained, and photoresist patterns with different line widths cannot be obtained. That is, a photoresist pattern of one size can only correspond to one mask, and the masks used between products of different sizes cannot be reused. The mask plate is expensive and occupies a great proportion in the project research and development cost.
Therefore, how to form photoresist patterns with different line widths at low cost is an important problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to form photoresist patterns with different line widths at low cost.
To this end, a first embodiment of the present invention provides an exposure apparatus including
The rotatable mirror exposes the photoresist on the substrate through an opening of a mask plate arranged below the rotatable mirror, and the rotatable mirror rotates to adjust the incidence direction of the parallel light beams incident on the surface of the mask plate.
Preferably, the exposure apparatus further comprises
A light source emitting a light beam;
a plane mirror reflecting the outgoing beam;
a fly-eye lens receiving the outgoing light beam reflected by the planar mirror; and
and a concave mirror for forming the light beam emitted from the fly-eye lens into the parallel light beam and for making the parallel light beam incident on the rotatable mirror.
Preferably, the opening portion is a vertical opening with respect to a surface of the mask plate, and
the rotatable mirror rotates to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be vertical, and a photoresist pattern with a first line width is obtained;
the rotatable mirror rotates to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be inclined, and a photoresist pattern with a second line width is obtained, wherein the first line width is larger than the second line width.
Preferably, the opening part is an inclined opening relative to the surface of the mask plate, and opposite inclined side walls of the inclined opening are arranged to be parallel to each other; and is
The rotatable mirror rotates to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be the same as the inclination direction trend of the opening, and a photoresist pattern with a third line width is obtained;
the rotatable mirror rotates to adjust the incidence direction of the parallel light beams to be vertical relative to the surface of the mask plate, and a fourth line-width photoresist pattern is obtained;
the rotatable mirror rotates to enable the incidence direction of the parallel light beams relative to the surface of the mask plate to be opposite to the inclination direction trend of the opening, so that a photoresist pattern with a fifth line width is obtained,
wherein the third linewidth is greater than the fourth linewidth, which is greater than the fifth linewidth.
A second embodiment of the present invention provides an exposure method comprising
And exposing the photoresist on the substrate by enabling parallel light beams to penetrate through the opening part of the mask plate, wherein the incidence direction of the parallel light beams relative to the surface of the mask plate can be adjusted, so that the line width of the exposed photoresist pattern can be adjusted.
Preferably, the light source emits a light beam;
the plane mirror reflects the emergent light beam;
the fly-eye lens receives the emergent light beam reflected by the plane mirror;
the concave mirror forms the light beam emitted from the fly-eye lens into the parallel light beam and inputs the parallel light beam to the rotatable mirror; and
the rotatable mirror exposes the photoresist on the substrate through the opening of the mask plate arranged below the rotatable mirror, wherein the rotatable mirror rotates to adjust the incidence direction of the parallel light beams incident on the surface of the mask plate.
Preferably, the opening portion is provided as a vertical opening with respect to a surface of the mask plate, and
rotating the rotatable mirror to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be vertical, so as to obtain a photoresist pattern with a first line width;
and rotating the rotatable mirror to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be inclined so as to obtain a photoresist pattern with a second line width, wherein the first line width is larger than the second line width.
Preferably, the opening portion is provided as an inclined opening with respect to the surface of the mask plate, and opposite inclined side walls of the inclined opening are provided in parallel with each other; and is
Rotating the rotatable mirror to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be the same as the inclination direction trend of the opening, so as to obtain a photoresist pattern with a third line width;
rotating the rotatable mirror to adjust the incidence direction of the parallel light beams to be vertical relative to the surface of the mask plate to obtain a fourth line-width photoresist pattern;
rotating the rotatable mirror to make the incidence direction of the parallel light beam relative to the surface of the mask plate opposite to the inclination direction trend of the opening to obtain a photoresist pattern with a fifth line width,
wherein the third linewidth is greater than the fourth linewidth, which is greater than the fifth linewidth.
A third embodiment of the present invention provides a method for manufacturing a color filter substrate, including
Forming a black matrix material on a substrate;
forming a photoresist on the black matrix material;
forming a photoresist pattern using the exposure method provided according to the second embodiment;
removing the exposed black matrix material to form a black matrix;
forming a color resistance material on the black matrix and the exposed substrate;
forming a photoresist pattern by using the exposure method provided according to the second embodiment, the photoresist pattern covering the color resist material formed on the exposed substrate;
and removing the exposed color resistance material to form a color resistance layer.
A fourth embodiment of the present invention provides a color film substrate manufactured by the manufacturing method provided in the third embodiment.
The invention has the following beneficial effects:
the exposure equipment is provided with the rotatable mirror, and the incident direction of the parallel light beams incident to the surface of the mask plate can be adjusted through rotation, so that the line width of the photoresist pattern exposed by the exposure equipment can be adjusted. The device is easy to operate, low in cost and simple in structure. When the exposure equipment is used for exposure, photoresist patterns with different continuous line widths can be obtained under the condition of not replacing a mask plate, and the cost of exposure lithography is greatly reduced. Further, the opening portion of the mask corresponding to the exposure apparatus is set to be an inclined opening with respect to the surface of the mask, thereby making it easier to obtain a photoresist pattern of a specific line width when rotated by the rotatable mirror. According to the exposure method, the line width of the exposed photoresist pattern can be continuously adjusted without adjusting the size of the opening part of the mask plate, so that the use efficiency of the mask plate is greatly improved, and the higher production cost caused by replacement of the mask plate when photoresist patterns with different line widths are obtained is reduced.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Fig. 1 shows an exposure apparatus according to an embodiment of the present invention.
Fig. 2 shows an exposure scheme according to another embodiment of the present invention, in which the mask opening portion is provided as a vertical opening.
An exposure scheme according to another embodiment of the present invention is shown in fig. 3-5, in which the mask opening portion is provided as a slanted opening.
Fig. 6 shows a case where the incident direction of the parallel light flux and the inclination direction tendency of the opening portion are the same according to another embodiment of the present invention.
Fig. 7 shows a case where the incident direction of the parallel light flux and the inclination direction of the opening portion are opposite in tendency according to another embodiment of the present invention.
Fig. 8 shows a flowchart of an exposure method according to another embodiment of the present invention.
Fig. 9 is a flowchart illustrating a method for manufacturing a color filter substrate according to another embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the invention, the invention is further described below with reference to preferred embodiments and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
One embodiment of the present invention provides an exposure apparatus including a rotatable mirror that exposes a photoresist on a substrate through an opening portion of a mask plate disposed therebelow, wherein the rotatable mirror rotates to adjust an incident direction of the parallel light beam incident on a surface of the mask plate.
In the specific example shown in fig. 1, the exposure apparatus 10 includes a light source 101, a plane mirror 102, a fly-eye lens 103, a concave mirror 104, and a rotatable mirror 105.
The light source 101 emits a light beam, wherein the light source 101 may be a point light source, a line light source, a surface light source, preferably a point light source. Further, the light source 101 is preferably a laser light source, which has better collimation performance.
A light flux emitted from the light source 101 enters the plane mirror 102, and the plane mirror 102 reflects the emitted light flux to the fly-eye lens 103. In the example in the figure, the flat mirror 102 is disposed above the light source 101, and the light source 101 emits a light beam upward.
The fly-eye lens 103 receives the light beam reflected by the plane mirror 102 and emits the light beam to the concave mirror 104.
The concave mirror 104 forms the light beam emitted from the fly-eye lens 103 into the parallel light beam and enters the parallel light beam into the rotatable mirror 105.
The parallel light beam emitted from the rotatable lens 105 is incident on the surface of the mask plate 20 disposed below.
In the case shown in fig. 1 and 2, the opening 201 is a vertical opening with respect to the surface of the mask 20. In fig. 1, the photoresist applied on the substrate 30 is irradiated with parallel light beams vertically through the opening 201, and is exposed and developed to obtain a photoresist pattern as indicated by reference numeral 301 in the drawing, with a line width of S1. The exposed photoresist in the figure is developed to remain, meaning the photoresist is a negative photoresist. However, it is understood by those skilled in the art that the use of a positive photoresist is also within the scope of the present application, except that unexposed portions are left.
In the case shown in fig. 2, the rotatable mirror is rotated to adjust the incident direction of the parallel light beam with respect to the surface of the mask plate 20 to be inclined, resulting in a photoresist pattern with a line width of S2.
As compared with fig. 1, it is understood that the line width S1 is larger than the line width S2 because the oblique parallel light beams are partially blocked by the vertical opening 201.
In the conventional exposure apparatus, a mask plate is perpendicularly irradiated with a parallel light beam fixed, and thus, it is necessary to obtain photoresist patterns with different line widths by using mask plates with different opening sizes.
In comparison, in the exposure apparatus in this embodiment, the incident direction of the parallel light beam with respect to the surface of the mask plate (that is, the opening portion) is further adjusted by adjusting the rotation angle of the rotatable mirror, so that the line width of the exposed photoresist pattern can be continuously adjusted and the operation is simple, and in the exposure process, under the condition that different mask plates do not need to be replaced, different line width photoresist patterns can be obtained, so that the utilization rate of the mask plates is greatly improved, and the cost of the exposure process is reduced.
It will be understood by those skilled in the art that the above-described composition of the exposure apparatus is merely an example, and specific device parameters, setting positions, setting angles, setting intervals, and the like of each optical device may be set according to actual needs in specific application scenarios as long as the incident direction of the parallel light beam incident on the surface of the mask plate is adjustable through the teachings of the present application.
In the example shown in fig. 3 to 5, the opening portion 201 of the mask plate 20 is made to be inclined with respect to the surface of the mask plate 20, and the opposite inclined sidewalls 2011 and 2012 of the inclined opening are formed to be parallel to each other.
Among them, in the example shown in fig. 3, the same as the example shown in fig. 1 is that the rotatable mirror rotates to still make the parallel beam incident vertically to the surface of the mask plate 20. The photoresist applied on the substrate 30 is irradiated with a parallel light beam through the opening 201, and is exposed and developed to obtain a photoresist pattern as indicated by reference numeral 301 in the drawing, and the line width is S4. The exposed photoresist in the figure is developed to remain, meaning the photoresist is a negative photoresist. However, it is understood by those skilled in the art that the use of a positive photoresist is also within the scope of the present application, except that unexposed portions are left.
As compared with fig. 1, it can be seen that since the inclined opening portion 201 partially blocks the incidence of the parallel light beam, the line width S4 is smaller than the line width S1 with the opening aperture of the opening portion 201 unchanged.
In the example shown in fig. 4, the rotatable mirror is rotated to adjust the incident direction of the parallel light beam with respect to the surface of the mask plate 20 to be the same as the inclination direction tendency of the opening, resulting in the photoresist pattern 301 with the line width of S3.
Since the incidence direction of the parallel light beam with respect to the surface of the mask plate 20 is the same as the inclination direction trend of the opening, it is easily understood that the line width S3 is greater than S4.
In the example shown in fig. 5, the rotatable mirror is rotated to adjust the incident direction of the parallel light beam with respect to the surface of the mask plate 20 to be opposite to the inclination direction tendency of the opening, resulting in the photoresist pattern 301 with the line width of S5.
Since the incident direction of the parallel light beams with respect to the surface of the mask plate 20 is opposite to the inclination direction trend of the opening, the inclined opening portion 201 shields most of the incident parallel light beams, and it is easily understood that the line width S5 is smaller than S4.
In this context, the "same trend" and "opposite trend" are explained in connection with fig. 6 and 7.
As shown in fig. 6, if the incident direction of the parallel light beams is a direction that is obtained by rotating the mask plate 20 in a first direction (in fig. 6, in a counterclockwise direction) by an acute angle, and if the inclined direction of the opening 201 is also a direction that is obtained by rotating the mask plate 20 in the first direction (in fig. 6, in the counterclockwise direction) by an acute angle, the rotating directions of the two are the same (in fig. 6, in both the counterclockwise directions), in this case, the directions are referred to as "the same tendency".
Of course, it will be apparent to those skilled in the art that fig. 6 is an example given where both are rotated in a counterclockwise direction, however, an example where both are rotated in a clockwise direction is also conceivable.
As shown in fig. 7, if the inclination direction of the opening 201 is a direction obtained by rotating the surface of the mask 20 by an acute angle in a first direction (in fig. 7, in a counterclockwise direction), and if the incidence direction of the parallel light beam is a direction obtained by rotating the surface of the mask 20 by an acute angle in a second direction (in fig. 7, in a clockwise direction), the rotation directions of the two are opposite, in this case, the directions are referred to as "opposite directions".
Of course, as one skilled in the art can readily appreciate from the teachings of the present application, the incident direction of the parallel light beams is a direction from the surface of the mask plate rotated by an acute angle in the first direction, and the inclined direction of the opening portion is a direction from the surface of the mask plate rotated by an acute angle in the second direction.
When the opening portion is an inclined opening with respect to the mask plate surface and the opposite inclined side walls of the inclined opening are arranged parallel to each other, the line width of the resulting photoresist pattern is gradually decreased from S3 to S4 and further decreased to S5, where S5 may be as small as 0, when the parallel light beams are adjusted from the same tendency of the incident direction with respect to the mask plate surface as the inclined direction of the opening to the opposite tendency of the incident direction with respect to the mask plate surface as the inclined direction of the opening. In the scheme, the rotatable mirror can realize the continuous adjustment of the line width of the photoresist pattern to obtain the photoresist patterns with different line widths, and meanwhile, as can be seen from the figure, the adjustment range of the incident direction of the parallel light beams relative to the surface of the mask plate is relatively larger when the line width S3 is reduced to the line width S5, the photoresist pattern with a specific line width can be more easily adjusted and obtained.
In another embodiment of the present invention, an exposure method is provided, which includes exposing a photoresist on a substrate through an opening portion of a mask plate with a parallel light beam, wherein an incident direction of the parallel light beam with respect to a surface of the mask plate can be adjusted, so that a line width of a photoresist pattern to be exposed can be adjusted.
In a specific example, in combination with fig. 1 and 8, the exposure method further includes
S100, the light source 101 emits a light beam.
The light source 101 may be a point light source, a line light source, a surface light source, preferably a point light source. Further, the light source 101 is preferably a laser light source, which has better collimation performance.
S105, the plane mirror 102 reflects the outgoing light beam.
In the example in the figure, the flat mirror 102 is disposed above the light source 101, and the light source 101 emits a light beam upward.
S110, the fly-eye lens 103 receives the outgoing light beam reflected by the plane mirror 102.
S115, the concave mirror 104 forms the light beam emitted from the fly-eye lens 103 into the parallel light beam and makes the parallel light beam incident on the rotatable mirror 105. And
s120, the rotatable lens 105 exposes the photoresist on the substrate through the opening of the mask 20 disposed therebelow, wherein the rotatable lens rotates to adjust the incident direction of the parallel light beam incident on the surface of the mask.
In the conventional exposure method, the mask plates with different opening sizes are mainly used for obtaining the photoresist patterns with different line widths, and the mask plates are higher in cost, so that the exposure cost is also high.
In the case shown in this figure, in conjunction with fig. 1, the opening portion 201 is provided as a vertical opening with respect to the surface of the mask plate 20. The photoresist applied on the substrate 30 is irradiated with a parallel light beam vertically through the opening 201, and is exposed and developed to obtain a photoresist pattern as indicated by reference numeral 301 in the drawing, and the line width is S1. The exposed photoresist in the figure is developed to remain, meaning the photoresist is a negative photoresist. However, it is understood by those skilled in the art that the use of a positive photoresist is also within the scope of the present application, except that unexposed portions are left.
Referring to fig. 2, in the case shown in fig. 2, the incident direction of the parallel light beam with respect to the surface of the mask plate 20 is adjusted to be inclined, so that a photoresist pattern is obtained, and the line width is S2.
Since the oblique parallel light beams are partially blocked by the vertical opening portion 201 in fig. 2, the line width S2 is smaller than the line width S1 in fig. 1.
In the example shown in fig. 3 to 5 in conjunction with fig. 3 to 5, the opening portion 201 of the mask 20 is provided as an inclined opening with respect to the surface of the mask 20, and the opposite inclined sidewalls 2011 and 2012 of the inclined opening are provided in parallel with each other.
Among them, in the example shown in fig. 3, the same as the example shown in fig. 1 is that the parallel light beams are still incident vertically to the surface of the mask plate 20. The photoresist applied on the substrate 30 is irradiated with a parallel light beam through the opening 201, and is exposed and developed to obtain a photoresist pattern as indicated by reference numeral 301 in the drawing, and the line width is S4. The exposed photoresist in the figure is developed to remain, meaning the photoresist is a negative photoresist. However, it is understood by those skilled in the art that the use of a positive photoresist is also within the scope of the present application, except that unexposed portions are left.
Since the inclined opening portion 201 partially blocks the incidence of the parallel light beam, the line width S4 is smaller than the line width S1 with the opening aperture of the opening portion 201 unchanged, as compared with the case in fig. 1.
In the example shown in fig. 4, the incident direction of the parallel light beam with respect to the surface of the mask plate 20 is adjusted to have the same tendency as the inclination direction of the opening, resulting in the photoresist pattern 301 having a line width of S3.
Since the incidence direction of the parallel light beam with respect to the surface of the mask plate 20 is the same as the inclination direction trend of the opening, it is easily understood that the line width S3 is greater than S4.
In the example shown in fig. 5, the incident direction of the parallel light beams with respect to the surface of the mask plate 20 is adjusted to be opposite to the inclination direction trend of the openings by rotation of the parallel light beams, and a photoresist pattern 301 is obtained with a line width of S5.
Since the incident direction of the parallel light beams with respect to the surface of the mask plate 20 is opposite to the inclination direction trend of the opening, the inclined opening portion 201 shields most of the incident parallel light beams, and it is easily understood that the line width S5 is smaller than S4.
When the opening portion is an inclined opening with respect to the mask plate surface and the opposite inclined side walls of the inclined opening are arranged parallel to each other, in the exposure method, when the parallel light beams are adjusted from the same trend of the incident direction with respect to the mask plate surface as the inclined direction of the opening to the opposite trend of the incident direction with respect to the mask plate surface as the inclined direction of the opening, the line width of the obtained photoresist pattern is gradually reduced from S3 to S4 and further reduced to S5, wherein S5 may be as small as toward 0. In the scheme, the purpose of continuously adjusting the line width of the photoresist pattern to obtain the photoresist pattern with different line widths can be realized by adjusting the incident direction of the parallel light beams, and meanwhile, as can be seen from the figure, the adjustment range of the incident direction of the parallel light beams relative to the surface of the mask plate is relatively larger when the line width S3 is reduced to the line width S5, the photoresist pattern with a specific line width can be more easily adjusted.
Another embodiment of the present invention provides a method for manufacturing a color filter substrate, as shown in fig. 9, including the following steps:
s200, forming a black matrix material on the substrate;
s205, forming photoresist on the black matrix material;
s210, forming a photoresist pattern by using the exposure method provided by the first embodiment;
s215, removing the exposed black matrix material to form a black matrix;
s220, forming a color resistance material on the black matrix and the exposed substrate;
s225, forming a photoresist pattern by using the exposure method provided in the first embodiment, where the photoresist pattern covers the color resist material formed on the exposed substrate;
and S230, removing the exposed color resistance material to form a color resistance layer.
It can be understood that the method for manufacturing the color film substrate further includes a step of developing after exposure. And the color resistance layer comprises three colors of red, green and blue. This is common knowledge in the art and will not be described in detail herein.
By using the specific exposure method in the manufacture of the color film substrate, the color resistance layers and the black matrix layers with different line widths can be obtained without replacing a mask plate, and the higher cost caused by the fact that the black matrix layers with different line widths or the color resistance layers need to be matched with the mask plates with different opening parts in the prior art is greatly saved.
Based on the same inventive concept, another embodiment of the present invention provides a color filter substrate manufactured by the method for manufacturing a color filter substrate provided in the above embodiment. As the principle of the color film substrate for solving the technical problem is similar to that of the method for manufacturing the color film substrate provided by the embodiment of the present invention, the implementation of the color film substrate can refer to the implementation of the method for manufacturing the color film substrate, and this is not repeated here.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it will be obvious to those skilled in the art that other variations or modifications may be made on the basis of the above description, and all embodiments may not be exhaustive, and all obvious variations or modifications may be included within the scope of the present invention.
Claims (6)
1. An exposure apparatus characterized by comprising
The rotatable mirror exposes the photoresist on the substrate through an opening part of a mask plate arranged below the rotatable mirror, and the rotatable mirror rotates to adjust the incidence direction of the parallel light beams incident on the surface of the mask plate;
wherein:
the opening part is a vertical opening relative to the surface of the mask plate, and
the rotatable mirror rotates to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be vertical, and a photoresist pattern with a first line width is obtained;
the rotatable mirror rotates to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be inclined, so that a photoresist pattern with a second line width is obtained, wherein the first line width is larger than the second line width; or
The opening part is an inclined opening relative to the surface of the mask plate, and opposite inclined side walls of the inclined opening are arranged to be parallel to each other; and is
The rotatable mirror rotates to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be the same as the inclination direction trend of the inclined opening, and a photoresist pattern with a third line width is obtained;
the rotatable mirror rotates to adjust the incidence direction of the parallel light beams to be vertical relative to the surface of the mask plate, and a fourth line-width photoresist pattern is obtained;
the rotatable mirror rotates to enable the incidence direction of the parallel light beams relative to the surface of the mask plate to be opposite to the inclination direction trend of the inclined opening, so that photoresist patterns with a fifth line width are obtained,
wherein the third linewidth is greater than the fourth linewidth, which is greater than the fifth linewidth.
2. The exposure apparatus according to claim 1, further comprising
A light source emitting a light beam;
a plane mirror reflecting the outgoing beam;
a fly-eye lens receiving the outgoing light beam reflected by the planar mirror; and
and a concave mirror for forming the light beam emitted from the fly-eye lens into the parallel light beam and for making the parallel light beam incident on the rotatable mirror.
3. An exposure method, comprising
Enabling parallel light beams to penetrate through an opening part of a mask plate to expose the photoresist on the substrate, wherein the incidence direction of the parallel light beams relative to the surface of the mask plate can be adjusted, so that the line width of the exposed photoresist pattern can be adjusted;
wherein:
the opening portion is provided as a vertical opening with respect to the surface of the mask plate, and
rotating the rotatable mirror to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be vertical, so as to obtain a photoresist pattern with a first line width;
rotating the rotatable mirror to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be inclined so as to obtain a photoresist pattern with a second line width, wherein the first line width is larger than the second line width; or
The opening part is arranged to be an inclined opening relative to the surface of the mask plate, and opposite inclined side walls of the inclined opening are arranged to be parallel to each other; and is
Rotating a rotatable mirror to adjust the incidence direction of the parallel light beams relative to the surface of the mask plate to be the same as the inclination direction trend of the inclined opening, so as to obtain a photoresist pattern with a third line width;
rotating the rotatable mirror to adjust the incidence direction of the parallel light beams to be vertical relative to the surface of the mask plate to obtain a fourth line-width photoresist pattern;
rotating the rotatable mirror to reverse the incidence direction of the parallel light beams relative to the surface of the mask plate to the inclination direction of the inclined opening to obtain a photoresist pattern with a fifth line width,
wherein the third linewidth is greater than the fourth linewidth, which is greater than the fifth linewidth.
4. The exposure method according to claim 3,
the light source emits light beams;
the plane mirror reflects the emergent light beam;
the fly-eye lens receives the emergent light beam reflected by the plane mirror;
the concave mirror forms the light beam emitted from the fly-eye lens into the parallel light beam and inputs the parallel light beam to the rotatable mirror; and
the rotatable mirror exposes the photoresist on the substrate through the opening of the mask plate arranged below the rotatable mirror, wherein the rotatable mirror rotates to adjust the incidence direction of the parallel light beams incident on the surface of the mask plate.
5. The manufacturing method of the color film substrate is characterized by comprising the following steps
Forming a black matrix material on a substrate;
forming a photoresist on the black matrix material;
forming a photoresist pattern using the exposure method of any one of claims 3 to 4;
removing the exposed black matrix material to form a black matrix;
forming a color resistance material on the black matrix and the exposed substrate;
forming a photoresist pattern using the exposure method of any one of claims 3 to 4, the photoresist pattern covering the color resist material formed on the exposed substrate;
and removing the exposed color resistance material to form a color resistance layer.
6. A color filter substrate manufactured by the manufacturing method of claim 5.
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| CN114122230B (en) * | 2021-11-01 | 2023-08-22 | 深圳市华星光电半导体显示技术有限公司 | Mask plate, display panel and manufacturing method |
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|---|---|---|---|---|
| US20070048677A1 (en) * | 2005-08-26 | 2007-03-01 | Wintek Corporation | Exposure method for making separator |
| US8524443B2 (en) * | 2010-07-07 | 2013-09-03 | Eulitha A.G. | Method and apparatus for printing a periodic pattern with a large depth of focus |
| CN102854756B (en) * | 2012-08-06 | 2014-10-22 | 京东方科技集团股份有限公司 | Method and device for exposure |
| KR102180785B1 (en) * | 2013-03-18 | 2020-11-20 | 유리타 아. 게. | Methods and systems for printing periodic patterns |
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2018
- 2018-01-03 CN CN201810004276.5A patent/CN108170009B/en not_active Expired - Fee Related
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