JP2004053683A - Method and apparatus for managing pattern forming process - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To manage a pattern forming process quantitatively with high precision by using pattern area as a management index. <P>SOLUTION: A light intensity distribution of a projection image of a mask pattern is simulated, the area of a projection image satisfying specified light intensity on a substrate is calculated according to the light intensity distribution obtained by the simulation, and pattern formation conditions are adjusted according to the area of the projection image. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method and an apparatus for managing a pattern forming process, and more particularly to a method and an apparatus for managing a pattern forming process using photolithography technology.
[0002]
[Prior art]
In the manufacture of semiconductor devices, pattern formation is performed using photolithography technology. The photolithography technology uses a projection optical system to project and expose a mask pattern made of chrome or the like on a glass substrate to a resist film on a semiconductor substrate, thereby transferring the mask pattern to the resist film. In order to manufacture a semiconductor device having high performance at a desired yield, it is necessary to manage a pattern forming process so that a mask pattern is accurately transferred onto a resist film.
[0003]
However, recent miniaturization of patterns has made it difficult to accurately transfer a mask pattern onto a semiconductor substrate. That is, as the pattern size approaches the wavelength of the exposure light of the projection optical system, the phenomenon of the projection light wrapping becomes remarkable, and the shape distortion of the resist pattern with respect to the mask pattern cannot be ignored. In addition, with the miniaturization of patterns, the allowable range of misalignment between patterns becomes narrower, and furthermore, chromium residue on the mask pattern and dust attached to the resist surface have a size that cannot be ignored as the pattern becomes finer. All of which cause deterioration in the performance of semiconductor devices and decrease in manufacturing yield.
[0004]
As described above, it is difficult to suppress the deviation from the mask pattern as the pattern becomes finer. Therefore, in manufacturing a semiconductor device, the mask pattern is designed and used on the assumption that the deviation from the mask pattern occurs. The formed pattern is formed. That is, the allowable range of the pattern shift required for keeping the device characteristics within the desired range is set, and the process management is performed so that the pattern shift realized in the actual pattern forming process falls within this allowable range. Is As a prerequisite for performing such a process management, it is necessary to accurately estimate the pattern shift that occurs in the pattern formation process.However, in a method based on a projection exposure experiment using a mask pattern, in addition to the pattern size and shape, the pattern density The result is influenced by various factors such as the degree of the resistance and the characteristics of the resist film, and it is practically difficult to conduct an experiment in consideration of all these factors.
[0005]
Therefore, there is known a method of performing a so-called light intensity simulation for numerically calculating a light intensity distribution when a mask pattern is projected and exposed instead of actually performing a projection exposure experiment, thereby predicting a pattern shift.
For light intensity simulation, various methods have been developed for the purpose of reducing the simulation accuracy and the simulation time, and computer programs for the simulation have been marketed, so that the shape of the resist pattern can be accurately predicted. It is used practically at design and development sites.
[0006]
Conventionally, the line width of a pattern has been used as an index that quantitatively represents the pattern shift obtained by the light intensity simulation as described above, and so-called line width management has been performed.
In line width management, it is quantitatively predicted that when the line width is larger than a predetermined value, the possibility of a short circuit with an adjacent pattern increases, and conversely, when the line width becomes smaller, the possibility of disconnection increases. The management of the pattern forming process is performed so as to fall within the range.
[0007]
For example, a permissible value of a line width required for realizing a desired device performance is determined, and the permissible value of the line width is allocated to each process for forming a pattern, thereby setting an individual permissible line width for each process. In this case, each process can be managed separately from other processes so as to satisfy the individual allowable line width set for the own process. Also, by adding the line width mismatch actually obtained in each process, the pattern mismatch finally realized is quantitatively predicted, or the actual line width and the allowable line width individually given. From this difference, the process margin in each process can be quantitatively estimated, and each process for forming a pattern can be uniformly managed.
[0008]
[Problems to be solved by the invention]
However, line width management has the following problems. That is, the factors causing the pattern shift when the mask pattern is projected and exposed include the proximity effect of light, the lens aberration of the projection optical system, and the like in addition to the above-described wraparound phenomenon of the solid light. As the distortion pattern becomes complicated and fine, the distortion becomes remarkable. However, since the line width indicates a mismatch at a specific portion of the pattern, such distortion of the pattern shape cannot be accurately represented.
[0009]
Conventionally, the line width was measured by observing the two-dimensional shape of the light intensity distribution obtained by the light intensity simulation to identify a place where disconnection, short-circuit, etc. might occur. In this method, it is difficult to specify the measurement point of the line width, and it is not possible to accurately represent a pattern shift. For this reason, a method has been proposed in which the average value of the line widths measured at a plurality of points in the pattern is used as a management index.
[0010]
In forming a contact with a capacitor cell of a DRAM or a source / drain region of a MOS transistor, the area of a pattern directly affects device characteristics. However, in line width management, a mismatch between pattern areas is appropriately represented. And there is a problem that it is not enough to grasp the influence on the device characteristics.
[0011]
Further, the pattern defect also affects the shape of an adjacent pattern depending on its size and formation position, but there is a problem that the influence of such a pattern defect cannot be sufficiently evaluated in line width management.
Accordingly, it is an object of the present invention to quantitatively and accurately control a pattern forming process by using a pattern area as a management index.
[0012]
[Means for Solving the Problems]
To solve the above problem, a light intensity distribution of a projected image of a mask pattern is simulated, and an area of a projected image satisfying a predetermined light intensity on a substrate is calculated based on the light intensity distribution obtained by the simulation. Adjusting a pattern forming condition based on the area of the projected image, a method for managing a pattern forming process,
Alternatively, an area of a common portion of a projected image satisfying a predetermined light intensity for a plurality of mask patterns is calculated, and a pattern forming condition is adjusted based on the area of the common portion. Management method,
Alternatively, the light intensity distribution of the projected image of the photomask pattern to which the defect has been added is simulated, and the area of the projected image that satisfies the predetermined light intensity on the substrate is calculated based on the light intensity distribution obtained by the simulation. A method for managing a pattern forming process, comprising: adjusting a pattern forming condition based on an area occupied by the projected image within a predetermined region on a substrate;
Alternatively, a simulation unit that simulates a light intensity distribution of a projection image of the mask pattern, an area calculation unit that calculates an area of a projection image that satisfies a predetermined light intensity based on the light intensity distribution obtained by the simulation, The present invention is achieved by a pattern formation process management apparatus, which includes a management unit that manages a pattern formation process based on the area of a projected image.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
In the present invention, the pattern forming process is managed based on the area of the projected image of the mask pattern obtained by the light intensity simulation. Therefore, a method of calculating an area of a projected image that satisfies a light intensity condition necessary to expose a resist film based on a light intensity distribution obtained by a light intensity simulation will be described below.
[0014]
In FIG. 1, 1 is a mask pattern, and 2 is a projected image of the mask pattern obtained by light intensity simulation. The boundary line of the projected image 2 indicates a contour line of the light intensity value corresponding to the photosensitivity limit of the resist, and when the inside of the mask pattern 1 is shielded from light, a predetermined light intensity condition is set in a region surrounded by the boundary line. Is satisfied. When the size of the mask image approaches the wavelength of the projection light, the shape of the projection image 2 greatly shifts from the shape of the mask pattern 1 due to the influence of the wraparound of the projection light as seen in FIG.
[0015]
When calculating the area of the projected image, the projection surface is divided into cells 3 surrounded by vertical and horizontal grid lines having a predetermined pitch, and the light intensity values obtained by the light intensity simulation at the four corners of each cell 3, that is, at the intersections of the grid lines. Allocate. Then, cells satisfying a predetermined light intensity are extracted by the following procedure, and their areas are totaled.
(1) When the cell size is sufficiently smaller than the size of the mask pattern
The light intensity value of the cell is represented by the average of the light intensity at the four corners of the cell or the light intensity value at the center of the cell. Then, it is determined whether or not the light intensity value is smaller than a predetermined light intensity value for all the cells existing inside the mask pattern 1 and all the cells in contact with the boundary line of the mask pattern 1, and the cells having the light intensity value smaller than the predetermined light intensity value are determined. Is added to the projected area. Here, it is assumed that 0 is given to the projection area as an initial value.
[0016]
FIG. 1 shows an example in which the projection image 2 is formed inside the mask pattern 1. However, in general, the projection image 2 is formed outside the mask pattern 1 due to the influence of an adjacent pattern in addition to the sneak of projection light. May spread. Therefore, when a cell in contact with the boundary line of the mask pattern 1 satisfies the light intensity condition, a similar determination is made for cells adjacent to the outside of the cell, and it is determined that the light intensity condition is satisfied. In that case, the area of the cell is added to the projected area. By repeating this process until no cells satisfying the light intensity condition remain outside the mask pattern 1, the areas of all the cells satisfying the predetermined light intensity value are added, thereby calculating the area of the projected image 2. Can be.
(2) When the cell size cannot be ignored compared to the size of the mask pattern
The light intensity values at the four corners are examined for the cells existing inside the mask pattern 1 and all the cells in contact with the boundary of the mask pattern 1. Then, the cells whose light intensity values at all four corners are smaller than the predetermined light intensity value are determined to be inside the projected image 2, and the cell area is added to the projected area. Cells in which the light intensity values at the four corners are all larger than the predetermined light intensity value are determined to be outside the projected image 2 and are excluded. In addition, it is determined that the cell having the points higher and lower than the predetermined value in the light intensity values at the four corners is on the boundary line of the projection image 2, and in this case, the intersection of the boundary line of the projection image 2 and the grid line A line segment that divides the cell is obtained from the coordinates, and the area of a portion where the light intensity is smaller than a predetermined value in the divided cells is added to the projected area.
[0017]
Similarly to the case of (1), when a cell in contact with the boundary line of the mask pattern 1 satisfies the light intensity condition, a similar determination is made for a cell adjacent to the outside of the cell and the light intensity is determined. If it is determined that the condition is satisfied, the area of the cell is added to the projected area. By repeating this process until there are no cells satisfying the light intensity condition outside the mask pattern 1, the area of the projected image 2 satisfying the predetermined light intensity value can be calculated.
[0018]
Next, a method for managing the pattern forming process based on the area of the projected image will be described.
FIG. 2A is an enlarged view of a cell pattern 4 of the DRAM capacitor and a projected image 5 of the cell pattern 4 obtained by the light intensity simulation. The boundary line of the projected image 5 shows a contour line of the light intensity corresponding to the photosensitive limit of the resist as in FIG. The projection image 5 is deformed by the wraparound of the projection light, and its area is reduced as compared with the area of the cell pattern 4. Therefore, when the cell pattern 4 is used as a mask pattern and transferred onto a substrate, the capacitor area is reduced as compared with the design value.
[0019]
Therefore, the area of the projected image 5 is calculated by the above-described method, and the size of the cell pattern 4 is corrected so as to fall within the allowable range of the capacitor area set based on the target performance of the DRAM.
Although it is possible to obtain a capacitor area equal to the design value by enlarging and correcting the size of the cell pattern 4, the correction size is usually determined by a trade-off with the enlargement of the device size. The decrease can be accurately grasped by the area of the projected image after the cell pattern correction, and thereby, it is possible to predict a change in the device characteristics after the correction.
[0020]
In order to suppress both the increase in the device size and the decrease in the capacitor area, a correction pattern is used as follows. As is clear from FIG. 2A, the area reduction of the projected image 5 is caused by the rounded corner of the cell pattern. Focusing on this point, as shown in FIG. 2B, rectangular auxiliary patterns 6 each having a size of one side s are added to the four corners of the cell pattern 4. Compared with the projected image shown in FIG. 2 (A), it can be seen that the distortion of the projected image 5 is reduced by the addition of the auxiliary pattern 6 and is closer to the area of the cell pattern 4.
[0021]
FIG. 3 shows the result of determining the relationship between the area of the projected image 5 and the size s of the auxiliary pattern 6. The area ratio in the figure represents the area of the projected image 5 as a ratio to the area of the cell pattern 4. . In the light intensity simulation of the projection image 5, the projection light wavelength of the projection optical system was 248 nm, NA was 0.68, and σ was 0.50. The figure also shows the auxiliary pattern size dependency of the line width ratio m / n, which is the ratio of the width m at the center of the projected image 5 to the width n of the cell pattern 4. It can be seen that the area of the projected image 5 approaches the area of the cell pattern 4 as the size s of the auxiliary pattern 6 increases. From this result, the size s of the auxiliary pattern required to obtain a desired capacitor area can be determined.
[0022]
On the other hand, when the size s of the auxiliary pattern 6 is increased, a large change in the line width ratio is not seen, so that it is understood that distortion and a change in area of the projected image 5 cannot be grasped by the conventional line width management. However, if the size of the auxiliary pattern 6 is increased beyond a certain limit, the distortion of the projection image 5 increases, which appears as a decrease in the line width ratio shown in FIG. Therefore, the size of the auxiliary pattern is determined so that the area ratio becomes maximum within the allowable range of the line width ratio.
[0023]
Next, an example in which the present invention is applied to a pattern overlapping process will be described. FIG. 4 shows two types of mask patterns used to form wiring contacts on the source / drain regions of the MOS transistor so as to overlap with each other, and a projected image thereof.
FIG. 1A shows an active layer pattern 7 of a MOS transistor and a projected image 8 thereof, and both ends of the active layer pattern 7 become source / drain regions. FIG. 1B shows an opening pattern 9 for forming a contact hole and a projected image 10 thereof. FIG. 3C shows a state in which the projection image 8 and the projection image 10 are superimposed, and there is a displacement of δx in the x direction and δy in the y direction. The common area of the areas of the projected images 8 and 10 is the contact area.
[0024]
The tip of the projection image 8 is deformed to be round due to the wraparound of the projection light, and the projection image 10 is deformed from a rectangle to a state close to a circle. Therefore, when the active layer pattern 7 and the opening pattern 9 are transferred in an overlapping manner, as shown in FIG. 9C, the influence of the distortion and displacement of the individual patterns overlap, and the contact area may be significantly reduced. is expected.
[0025]
FIG. 5 is a diagram showing the effect of pattern displacement on the contact area. The area ratio on the vertical axis indicates the contact area, that is, the area of the common portion of the projected image 8 of the active layer pattern and the projected image 10 of the opening pattern as a ratio to the area of the opening pattern 9. The figure shows the change in the area ratio with respect to the displacement δx in the x direction using the displacement δy in the y direction as a parameter. It can be seen that the contact area decreases sharply as the displacement increases.
[0026]
The reduction in the contact area increases the contact resistance and degrades the device characteristics. Therefore, the allowable value of the contact area is derived from the contact resistance necessary to satisfy the target performance of the device, and the allowable range of the displacement in the x direction and the y direction can be set from FIG. 5 using the allowable value. Then, the positioning accuracy of the projection optical system is determined based on the allowable range.
[0027]
The reduction in the contact area is caused by various factors other than the displacement of the pattern. As an example, the effect of a shift in the focal length of the projection optical system on the contact area will be described.
6A and 6B show an active layer pattern 11 of a MOS transistor having an oblique shape and a projected image 12 thereof. FIG. 6A shows a case where the deviation of the focal length of the projection optical system is 0, and FIG. The case where the deviation of the distance is 0.4 μm is shown. 6A and 6B, the projected image 12 of the active layer pattern 11 and the opening pattern (when the opening pattern for forming the contact hole is overlapped on the end of the active layer pattern 11 are formed. (Not shown) is an enlarged view of the projected image 12a, and a hatched portion which is an overlapping portion of the projected image 12 and the projected image 12a is a contact area. 6 (A) and 6 (B), the projected image 12 at both ends of the active layer pattern 11 retreats abruptly with a shift of the focal length, and accordingly, the contact area decreases significantly and the contact resistance increases. You can see that. Therefore, the relationship between the focal length shift and the contact area is important in determining the allowable range of the focal length.
[0028]
FIG. 7 shows the effect of the shift of the focal length of the projection optical system on the contact area of the active layer having the oblique shape shown in FIG. 6, and the width h of the active layer pattern 11 is used as a parameter. The area ratio of the vertical axis in FIG. 7 represents the area of the common portion between the projected image 12 of the active layer pattern and the projected image (not shown) of the opening pattern as a ratio to the area of the opening pattern. As the focal length shift increases, the contact area decreases sharply. From this result, it is possible to quantitatively evaluate the influence of the focal length shift of the projection optical system on the contact area. The projection optical system is adjusted based on the allowable value of the focal length shift.
[0029]
As shown in FIG. 7, when the width h of the active layer pattern 11 is reduced, the contact area is significantly reduced with respect to the focal length shift. However, when the width h is increased to prevent the contact area from decreasing, the active layer pattern 11 is reduced. The probability of short circuit between them increases. Therefore, the actual adjustment of the projection optical diameter is performed in consideration of these factors.
Next, a method for evaluating and managing the influence of a pattern defect formed due to residual chromium, dust on a resist surface, and the like when forming a mask pattern by the method according to the present invention will be described.
[0030]
FIG. 8 shows a state where a pattern defect D exists at an intermediate position between two wiring patterns 13 and 14 which are close to each other, and the pattern defect D is represented by a rectangle having a size of one side s. FIG. 9 shows projected images obtained by performing light intensity simulation on a region 15 surrounded by a dotted line in FIG. 8, and FIGS. 9A, 9B, and 9C show the projected images of the pattern defect D. This shows how the projection image changes depending on the size s. It can be seen that as the size s increases, the distortion of the projected images of the wiring patterns 13 and 14 increases and eventually causes a short circuit.
[0031]
FIG. 10 shows the pattern defect size dependency of the area of the projected image shown in FIG. 9, and the area ratio in the figure represents the ratio of the area of the projected image to the area of the region 15. By setting the area 15 to a range affected by the pattern defect, the influence of the pattern defect on the projected image can be grasped quantitatively. FIG. 2 also shows the shortest distance between the projected images of the wiring patterns 13 and 14 together with the line width ratio expressed as a ratio to the distance between the wiring patterns 13 and 14. Like the area ratio, the line width ratio changes rapidly with an increase in the size s. However, the line width ratio differs depending on the measurement location, and when the pattern has a complicated shape, the measurement location cannot be specified. It becomes difficult and it becomes difficult to objectively express the influence of the pattern defect. On the other hand, the area ratio can uniquely represent the effect of the pattern defect, and the effect of the pattern defect can be objectively evaluated.
[0032]
The above is the evaluation of the effect of the size of the pattern defect on the pattern shift. Next, an example in which the effect of the arrangement position of the pattern defect is evaluated by the present invention will be described.
FIG. 11 shows a state where rectangular pattern defects D1 and D2 each having a size of one side s are arranged in regions where the ends of the wiring patterns 16, 17, and 18 are concentrated. 12 shows projected images of the wiring patterns 16, 17, and 18 shown in FIG. 11. FIG. 12A shows a case where only the pattern defect D1 exists, and FIG. 12B shows only a pattern defect D2. Shows the case where exists. FIG. 13 shows the result of calculating the area ratio in the case where the pattern defects D1 and D2 exist alone, respectively, corresponding to FIGS. 12A and 12B. From the figure, the pattern defect D1 is replaced with the pattern defect D2. It can be seen that a larger pattern shift is caused as compared with. On the other hand, in line width management, the result differs depending on the measurement location, and the effect of the pattern defect cannot be objectively grasped.
[0033]
FIG. 14 is a block diagram showing a management apparatus for implementing the above-described method for managing the pattern formation process. The mask pattern is designed by the mask pattern design unit 19 based on the target performance of the semiconductor device. The simulation unit 20 performs a light intensity simulation of the projected image of the mask pattern based on the designed mask pattern and the parameters of the projection optical system, and the area calculation unit 21 performs the light intensity distribution based on the light intensity distribution obtained by the simulation. The area of the projected image that satisfies predetermined light intensity conditions, for example, the light intensity corresponding to the photosensitive limit of the resist film is calculated. Then, the management unit 22 determines an allowable range of the area of the projected image required to keep the target performance of the semiconductor device within the predetermined range, and the area of the projected image sent from the area calculating unit 21 is set to the allowable range. Determine whether it fits. The determination result is sent to the mask pattern design unit 19 and the projection optical unit 23. The pattern design unit 19 corrects the mask pattern based on the determination result, and the projection optical unit 23 adjusts optical parameters. The above process is performed until the area of the projected image falls within the allowable range.
[0034]
In the embodiment of the present invention, the method of correcting the pattern size and adjusting the projection optical system based on the area of the projected image has been described. However, the management of the pattern forming process based on the area of the projected image is not limited thereto. It can also be used for management of a forming process and an etching process.
(Supplementary Note 1) The light intensity distribution of the projected image of the mask pattern is simulated,
Based on the light intensity distribution obtained by the simulation, calculate the area of the projected image satisfying the predetermined light intensity on the substrate,
A method for managing a pattern forming process, comprising adjusting pattern forming conditions based on the area of the projected image.
[0035]
(Supplementary note 2) The method for managing a pattern forming process according to supplementary note 1, wherein the mask pattern is corrected based on the area of the projected image.
(Supplementary Note 3) The method according to Supplementary Note 1, wherein the exposure condition of the projection optical system is adjusted based on the area of the projection image.
(Supplementary Note 4) The area of the common portion of the projected image satisfying the predetermined light intensity for the plurality of mask patterns is calculated,
2. The method for managing a pattern forming process according to claim 1, wherein the pattern forming condition is adjusted based on an area of the common portion.
[0036]
(Supplementary Note 5) The light intensity distribution of the projected image of the photomask pattern with the defect added is simulated,
Based on the light intensity distribution obtained by the simulation, calculate the area of the projected image satisfying the predetermined light intensity on the substrate,
A method for managing a pattern forming process, comprising adjusting a pattern forming condition based on an area occupied by a projected image in a predetermined region on a substrate.
[0037]
(Supplementary Note 6) A simulation unit for simulating the light intensity distribution of the projected image of the mask pattern,
An area calculation unit that calculates an area of a projected image that satisfies a predetermined light intensity based on the light intensity distribution obtained by the simulation,
A pattern formation process management device, comprising: a management unit that manages a pattern formation process based on the area of the projection image.
[0038]
【The invention's effect】
As described above, by managing the pattern forming process based on the area of the projected image of the mask pattern obtained by the light intensity simulation, the mask pattern can be corrected with higher accuracy than before, and Since it is possible to accurately grasp the influence of a position shift and the effect of a pattern defect in the pattern overlaying process, it is useful for achieving the target performance of the device and improving the manufacturing yield.
[Brief description of the drawings]
FIG. 1 is a view for explaining calculation of an area of a projected image of a mask pattern.
FIG. 2 is a diagram showing pattern distortion. (A) shows a capacitor cell pattern and its projected image, and (B) shows a capacitor cell pattern with an auxiliary pattern and its projected image.
FIG. 3 is a diagram showing the dependence of the area of a projected image on the size of an auxiliary pattern.
FIG. 4 is a view for explaining a pattern overlapping process (part 1); (A) shows the active layer pattern and its projected image, (B) shows the aperture pattern and its projected image, and (C) shows the superimposed projected image.
FIG. 5 is a diagram showing a positional deviation dependency of a contact area.
FIG. 6 is a view for explaining a pattern superposition process (part 2). (A) shows the case where the deviation of the focal length of the projection optical system is 0, and (B) shows the case where the deviation is 0.4 μm.
FIG. 7 is a diagram showing the dependence of the contact area on the focal length shift.
FIG. 8 shows a wiring pattern including a pattern defect (part 1).
FIG. 9 is a view showing a projected image of a wiring pattern including a pattern defect (part 1). (A) shows the case where the defect size s is 0, (B) shows the case where the defect size is 0.12 μm, and (C) shows the case where the defect size is 0.16 μm.
FIG. 10 is a diagram showing the pattern defect size dependency of the projection area (part 1).
FIG. 11 shows a wiring pattern including a pattern defect (part 2).
FIG. 12 is a view showing a projected image of a wiring pattern including a pattern defect (part 2). (A) shows the case where the defect D1 exists, and (B) shows the case where the defect D2 exists.
FIG. 13 is a view showing the pattern defect size dependency of the area of the projected image (part 2).
FIG. 14 is a block diagram showing an apparatus for managing a pattern forming process.
[Explanation of symbols]
1 Mask pattern
2, 5, 8, 10, 12, 12a Projected image
3 cells
4 Capacitor cell pattern
6 auxiliary patterns
7, 11 Active layer pattern
9 Opening pattern
13, 14, 16, 17, 18 Wiring pattern
15 Pattern defects
19 Pattern Design Department
20 Simulation section
21 Area calculator
22 Management Department
23 Projection optical unit

Claims (4)

Simulate the light intensity distribution of the projected image of the mask pattern,
Based on the light intensity distribution obtained by the simulation, calculate the area of the projected image satisfying the predetermined light intensity on the substrate,
A method for managing a pattern forming process, comprising adjusting pattern forming conditions based on the area of the projected image. Calculate the area of the common portion of the projected image that satisfies the predetermined light intensity for a plurality of mask patterns,
2. The method according to claim 1, wherein the pattern forming condition is adjusted based on the area of the common portion. Simulate the light intensity distribution of the projected image of the photomask pattern with the defect added,
Based on the light intensity distribution obtained by the simulation, calculate the area of the projected image satisfying the predetermined light intensity on the substrate,
A method for managing a pattern forming process, comprising adjusting a pattern forming condition based on an area occupied by a projected image in a predetermined region on a substrate. A simulation unit for simulating the light intensity distribution of the projected image of the mask pattern,
An area calculation unit that calculates an area of a projected image that satisfies a predetermined light intensity based on the light intensity distribution obtained by the simulation,
A pattern formation process management device, comprising: a management unit that manages a pattern formation process based on the area of the projection image.

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