KR101942164B1 - 소거가능한 프로그램가능 판독 전용 메모리를 위한 3 차원 어드레싱 - Google Patents

소거가능한 프로그램가능 판독 전용 메모리를 위한 3 차원 어드레싱 Download PDF

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KR101942164B1
KR101942164B1 KR1020167020956A KR20167020956A KR101942164B1 KR 101942164 B1 KR101942164 B1 KR 101942164B1 KR 1020167020956 A KR1020167020956 A KR 1020167020956A KR 20167020956 A KR20167020956 A KR 20167020956A KR 101942164 B1 KR101942164 B1 KR 101942164B1
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South Korea
Prior art keywords
eprom
data signal
shift register
shift registers
select data
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Korean (ko)
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KR20160104700A (ko
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분 빙 응
항 루 고이
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휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피.
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17543—Cartridge presence detection or type identification
    • B41J2/17546—Cartridge presence detection or type identification electronically
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
KR1020167020956A 2014-01-31 2014-01-31 소거가능한 프로그램가능 판독 전용 메모리를 위한 3 차원 어드레싱 Active KR101942164B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/014014 WO2015116129A1 (en) 2014-01-31 2014-01-31 Three-dimensional addressing for erasable programmable read only memory

Publications (2)

Publication Number Publication Date
KR20160104700A KR20160104700A (ko) 2016-09-05
KR101942164B1 true KR101942164B1 (ko) 2019-01-24

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US (3) US9773556B2 (cg-RX-API-DMAC7.html)
EP (5) EP3100273B1 (cg-RX-API-DMAC7.html)
JP (1) JP6262355B2 (cg-RX-API-DMAC7.html)
KR (1) KR101942164B1 (cg-RX-API-DMAC7.html)
CN (2) CN105940454B (cg-RX-API-DMAC7.html)
AU (2) AU2014380279B2 (cg-RX-API-DMAC7.html)
BR (1) BR112016017343B1 (cg-RX-API-DMAC7.html)
CA (1) CA2938125C (cg-RX-API-DMAC7.html)
DK (1) DK3100273T3 (cg-RX-API-DMAC7.html)
ES (1) ES2784236T3 (cg-RX-API-DMAC7.html)
HU (1) HUE048477T2 (cg-RX-API-DMAC7.html)
MX (1) MX367147B (cg-RX-API-DMAC7.html)
PH (1) PH12016501490B1 (cg-RX-API-DMAC7.html)
PL (1) PL3100273T3 (cg-RX-API-DMAC7.html)
PT (1) PT3100273T (cg-RX-API-DMAC7.html)
RU (1) RU2640631C1 (cg-RX-API-DMAC7.html)
SG (1) SG11201605665VA (cg-RX-API-DMAC7.html)
WO (1) WO2015116129A1 (cg-RX-API-DMAC7.html)
ZA (1) ZA201605059B (cg-RX-API-DMAC7.html)

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CN105940454B (zh) * 2014-01-31 2020-01-17 惠普发展公司，有限责任合伙企业 对可擦除可编程只读存储器进行三维寻址
BR112019006948B1 (pt) 2016-10-06 2022-12-20 Hewlett-Packard Development Company, L.P. Aparelho de controle para um dispositivo de ejeção de fluido, dispositivo de ejeção de fluido e método
BR112019015681B1 (pt) 2017-01-31 2023-10-31 Hewlett-Packard Development Company, L.P Arranjo de memória para uma matriz de ejeção de fluido, matriz de ejeção de fluido e cartucho de fluido
CN113276561B (zh) * 2017-01-31 2022-10-11 惠普发展公司，有限责任合伙企业 用于流体喷射片的存储器库装置、流体喷射片及流体盒
US11090926B2 (en) 2017-07-06 2021-08-17 Hewlett-Packard Development Company, L.P. Decoders for memories of fluid ejection devices
PH12019501747B1 (en) 2017-07-06 2022-11-09 Hewlett Packard Development Co Selectors for nozzles and memory elements
US10913265B2 (en) 2017-07-06 2021-02-09 Hewlett-Packard Development Company, L.P. Data lines to fluid ejection devices
AU2019428071B2 (en) 2019-02-06 2023-01-19 Hewlett-Packard Development Company, L.P. Print component with memory circuit
MX2021008895A (es) 2019-02-06 2021-08-19 Hewlett Packard Development Co Componente de impresion de comunicacion.
WO2020162910A1 (en) 2019-02-06 2020-08-13 Hewlett-Packard Development Company, L.P. Memories of fluidic dies
US11787173B2 (en) 2019-02-06 2023-10-17 Hewlett-Packard Development Company, L.P. Print component with memory circuit

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US20100328405A1 (en) * 2008-03-14 2010-12-30 Ness Erik D Secure Access To Fluid Cartridge Memory
US20120300568A1 (en) * 2011-05-25 2012-11-29 Samsung Electronics Co., Ltd. Method of Refreshing a Memory Device, Refresh Address Generator and Memory Device

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US20120300568A1 (en) * 2011-05-25 2012-11-29 Samsung Electronics Co., Ltd. Method of Refreshing a Memory Device, Refresh Address Generator and Memory Device

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Publication number Publication date
MX2016009841A (es) 2016-10-26
CN105940454A (zh) 2016-09-14
CN105940454B (zh) 2020-01-17
PH12016501490B1 (en) 2018-11-14
EP3100273B1 (en) 2020-03-25
JP2017507404A (ja) 2017-03-16
SG11201605665VA (en) 2016-08-30
EP3236471A3 (en) 2018-01-17
CA2938125C (en) 2018-10-23
CA2938125A1 (en) 2015-08-06
EP4468299A2 (en) 2024-11-27
ES2784236T3 (es) 2020-09-23
PT3100273T (pt) 2020-04-13
EP3100273A1 (en) 2016-12-07
KR20160104700A (ko) 2016-09-05
EP3236471A2 (en) 2017-10-25
US9928912B2 (en) 2018-03-27
EP3100273A4 (en) 2017-12-13
EP4468299A3 (en) 2025-02-26
WO2015116129A1 (en) 2015-08-06
US9773556B2 (en) 2017-09-26
DK3100273T3 (da) 2020-04-06
AU2014380279A1 (en) 2016-08-11
US20170221566A1 (en) 2017-08-03
US10340011B2 (en) 2019-07-02
BR112016017343B1 (pt) 2022-01-04
US20180114579A1 (en) 2018-04-26
BR112016017343A2 (cg-RX-API-DMAC7.html) 2017-08-08
PH12016501490A1 (en) 2017-02-06
EP3896696A1 (en) 2021-10-20
US20160343439A1 (en) 2016-11-24
HUE048477T2 (hu) 2020-07-28
EP3258469A1 (en) 2017-12-20
RU2640631C1 (ru) 2018-01-10
CN111326202A (zh) 2020-06-23
ZA201605059B (en) 2017-09-27
AU2017210573A1 (en) 2017-08-24
JP6262355B2 (ja) 2018-01-17
PL3100273T3 (pl) 2020-06-29
MX367147B (es) 2019-08-06
AU2014380279B2 (en) 2017-05-04
AU2017210573B2 (en) 2019-04-11
EP3258469B1 (en) 2021-10-06

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