KR101931931B1 - 신호 처리 회로 - Google Patents

신호 처리 회로 Download PDF

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Publication number
KR101931931B1
KR101931931B1 KR1020110143235A KR20110143235A KR101931931B1 KR 101931931 B1 KR101931931 B1 KR 101931931B1 KR 1020110143235 A KR1020110143235 A KR 1020110143235A KR 20110143235 A KR20110143235 A KR 20110143235A KR 101931931 B1 KR101931931 B1 KR 101931931B1
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KR
South Korea
Prior art keywords
transistor
oxide semiconductor
film
data
insulating film
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Expired - Fee Related
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KR1020110143235A
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English (en)
Korean (ko)
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KR20120075411A (ko
Inventor
요시유키 구로카와
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20120075411A publication Critical patent/KR20120075411A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Static Random-Access Memory (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
KR1020110143235A 2010-12-28 2011-12-27 신호 처리 회로 Expired - Fee Related KR101931931B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-291835 2010-12-28
JP2010291835 2010-12-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020180158858A Division KR101987638B1 (ko) 2010-12-28 2018-12-11 반도체 장치

Publications (2)

Publication Number Publication Date
KR20120075411A KR20120075411A (ko) 2012-07-06
KR101931931B1 true KR101931931B1 (ko) 2018-12-24

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020110143235A Expired - Fee Related KR101931931B1 (ko) 2010-12-28 2011-12-27 신호 처리 회로
KR1020180158858A Expired - Fee Related KR101987638B1 (ko) 2010-12-28 2018-12-11 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020180158858A Expired - Fee Related KR101987638B1 (ko) 2010-12-28 2018-12-11 반도체 장치

Country Status (4)

Country Link
US (2) US8687416B2 (https=)
JP (2) JP6030298B2 (https=)
KR (2) KR101931931B1 (https=)
TW (1) TWI529531B (https=)

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JP5839474B2 (ja) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
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US9153539B2 (en) 2013-03-15 2015-10-06 Nvidia Corporation Ground-referenced single-ended signaling connected graphics processing unit multi-chip module
TWI618058B (zh) * 2013-05-16 2018-03-11 半導體能源研究所股份有限公司 半導體裝置
JP6478562B2 (ja) * 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 半導体装置
JP6444723B2 (ja) * 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 装置
KR102253204B1 (ko) * 2014-02-07 2021-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 장치
JP6563313B2 (ja) * 2014-11-21 2019-08-21 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
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