KR101886853B1 - 비트 불량 및 가상 검사를 이용한 웨이퍼 검사 공정의 생성 - Google Patents

비트 불량 및 가상 검사를 이용한 웨이퍼 검사 공정의 생성 Download PDF

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KR101886853B1
KR101886853B1 KR1020147022835A KR20147022835A KR101886853B1 KR 101886853 B1 KR101886853 B1 KR 101886853B1 KR 1020147022835 A KR1020147022835 A KR 1020147022835A KR 20147022835 A KR20147022835 A KR 20147022835A KR 101886853 B1 KR101886853 B1 KR 101886853B1
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defects
wafer
physical locations
defect detection
detection methods
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KR20140124778A (ko
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포 분 용
조지 시몬
위에종 두
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케이엘에이-텐코 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N7/00—Television systems
    • H04N7/18—Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020147022835A 2012-01-18 2013-01-17 비트 불량 및 가상 검사를 이용한 웨이퍼 검사 공정의 생성 Active KR101886853B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261587911P 2012-01-18 2012-01-18
US61/587,911 2012-01-18
US13/743,074 US9277186B2 (en) 2012-01-18 2013-01-16 Generating a wafer inspection process using bit failures and virtual inspection
US13/743,074 2013-01-16
PCT/US2013/021880 WO2013109714A1 (en) 2012-01-18 2013-01-17 Generating a wafer inspection process using bit failures and virtual inspection

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KR1020187022407A Division KR102001356B1 (ko) 2012-01-18 2013-01-17 비트 불량 및 가상 검사를 이용한 웨이퍼 검사 공정의 생성

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KR20140124778A KR20140124778A (ko) 2014-10-27
KR101886853B1 true KR101886853B1 (ko) 2018-08-09

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KR1020187022407A Active KR102001356B1 (ko) 2012-01-18 2013-01-17 비트 불량 및 가상 검사를 이용한 웨이퍼 검사 공정의 생성

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US (2) US9277186B2 (enExample)
JP (2) JP6180435B2 (enExample)
KR (2) KR101886853B1 (enExample)
CN (2) CN108062558B (enExample)
TW (1) TWI625803B (enExample)
WO (1) WO2013109714A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9277186B2 (en) * 2012-01-18 2016-03-01 Kla-Tencor Corp. Generating a wafer inspection process using bit failures and virtual inspection
US20140245066A1 (en) * 2013-02-27 2014-08-28 Lionel J. Riviere-Cazaux Scan diagnosis analysis using callout clustering
US20140282327A1 (en) * 2013-03-14 2014-09-18 Nvidia Corporation Cutter in diagnosis (cid) a method to improve the throughput of the yield ramp up process
US9338134B2 (en) 2013-03-27 2016-05-10 Fortinet, Inc. Firewall policy management
US9355208B2 (en) * 2013-07-08 2016-05-31 Kla-Tencor Corp. Detecting defects on a wafer
TWI548013B (zh) * 2014-03-04 2016-09-01 旺宏電子股份有限公司 結合實體座標之位元失效偵測方法
US9470743B2 (en) * 2014-03-04 2016-10-18 Nvidia Corporation Dynamic yield prediction
US9816939B2 (en) * 2014-07-22 2017-11-14 Kla-Tencor Corp. Virtual inspection systems with multiple modes
US10127653B2 (en) * 2014-07-22 2018-11-13 Kla-Tencor Corp. Determining coordinates for an area of interest on a specimen
US10133263B1 (en) 2014-08-18 2018-11-20 Kla-Tencor Corporation Process condition based dynamic defect inspection
US10267746B2 (en) 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation
US9830421B2 (en) * 2014-12-31 2017-11-28 Kla-Tencor Corp. Alignment of inspection to design using built in targets
US10012599B2 (en) * 2015-04-03 2018-07-03 Kla-Tencor Corp. Optical die to database inspection
US10018571B2 (en) * 2015-05-28 2018-07-10 Kla-Tencor Corporation System and method for dynamic care area generation on an inspection tool
US9916965B2 (en) * 2015-12-31 2018-03-13 Kla-Tencor Corp. Hybrid inspectors
US10002447B1 (en) 2016-05-20 2018-06-19 Shanghai United Imaging Healthcare Co., Ltd. System and method for computed tomography
WO2018134287A1 (en) 2017-01-18 2018-07-26 Asml Netherlands B.V. Cascade defect inspection
JP7209513B2 (ja) * 2018-11-21 2023-01-20 三菱電機株式会社 半導体チップの製造方法および半導体ウェハ
JP7404009B2 (ja) * 2019-09-19 2023-12-25 キオクシア株式会社 加工情報管理システム及び加工情報管理方法
KR102459337B1 (ko) * 2020-12-21 2022-10-28 주식회사 에타맥스 실리콘 카바이드 웨이퍼의 결함을 회피하는 다이 구획방법 및 검사장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090017564A1 (en) 2005-02-02 2009-01-15 Texas Instruments Incorporated Method to detect and predict metal silicide defects in a microelectronic device during the manufacture of an integrated circuit

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991699A (en) * 1995-05-04 1999-11-23 Kla Instruments Corporation Detecting groups of defects in semiconductor feature space
JP2986410B2 (ja) * 1995-07-13 1999-12-06 松下電器産業株式会社 半導体ウェハの不良解析方法及びその装置
KR20000007570A (ko) * 1998-07-04 2000-02-07 윤종용 웨이퍼의 칩핑 검사 시스템 및 방법
JP3556509B2 (ja) * 1999-03-16 2004-08-18 株式会社東芝 欠陥解析システムおよびその方法
JP3612247B2 (ja) * 1999-09-14 2005-01-19 株式会社東芝 半導体検査装置及び半導体検査方法
AU1553601A (en) * 1999-11-29 2001-06-12 Olympus Optical Co., Ltd. Defect inspecting system
JP2002026102A (ja) * 2000-06-30 2002-01-25 Hitachi Ltd 検査情報処理方法及びその検査システム
US7194709B2 (en) 2004-03-05 2007-03-20 Keith John Brankner Automatic alignment of integrated circuit and design layout of integrated circuit to more accurately assess the impact of anomalies
CN100380621C (zh) * 2005-04-08 2008-04-09 力晶半导体股份有限公司 晶片缺陷检测方法与系统以及存储媒体
WO2007001260A1 (en) 2005-06-16 2007-01-04 Pdf Solutions, Inc. Test cells for semiconductor yield improvement
US8041103B2 (en) * 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7676077B2 (en) * 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
JP2008041940A (ja) * 2006-08-07 2008-02-21 Hitachi High-Technologies Corp Ｓｅｍ式レビュー装置並びにｓｅｍ式レビュー装置を用いた欠陥のレビュー方法及び欠陥検査方法
KR100939768B1 (ko) * 2006-09-22 2010-01-29 주식회사 하이닉스반도체 웨이퍼의 결함 검출 방법
KR100827440B1 (ko) 2006-09-29 2008-05-06 삼성전자주식회사 반도체 집적 회로 장치의 불량 분석 방법 및 시스템
JP4943304B2 (ja) * 2006-12-05 2012-05-30 株式会社 Ｎｇｒ パターン検査装置および方法
CN101211804B (zh) * 2006-12-28 2012-05-16 中芯国际集成电路制造(上海)有限公司 检测方法及检测系统
WO2008121955A2 (en) * 2007-03-30 2008-10-09 Tokyo Electron Limited In-line lithography and etch system
CN101334414B (zh) * 2007-06-29 2011-11-30 中芯国际集成电路制造(上海)有限公司 用于晶片的缺陷检测机台的匹配方法
US7975245B2 (en) * 2007-08-20 2011-07-05 Kla-Tencor Corp. Computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects
US8126255B2 (en) 2007-09-20 2012-02-28 Kla-Tencor Corp. Systems and methods for creating persistent data for a wafer and for using persistent data for inspection-related functions
JP5081590B2 (ja) * 2007-11-14 2012-11-28 株式会社日立ハイテクノロジーズ 欠陥観察分類方法及びその装置
JP6185693B2 (ja) * 2008-06-11 2017-08-23 ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法
US8269960B2 (en) * 2008-07-24 2012-09-18 Kla-Tencor Corp. Computer-implemented methods for inspecting and/or classifying a wafer
WO2010014609A2 (en) * 2008-07-28 2010-02-04 Kla-Tencor Corporation Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
US8041106B2 (en) * 2008-12-05 2011-10-18 Kla-Tencor Corp. Methods and systems for detecting defects on a reticle
JP5297261B2 (ja) * 2009-04-28 2013-09-25 株式会社日立ハイテクノロジーズ 観察欠陥選択処理方法、欠陥観察方法、観察欠陥選択処理装置、欠陥観察装置
JP5604067B2 (ja) * 2009-07-31 2014-10-08 株式会社日立ハイテクノロジーズ マッチング用テンプレートの作成方法、及びテンプレート作成装置
US9087367B2 (en) * 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US9277186B2 (en) * 2012-01-18 2016-03-01 Kla-Tencor Corp. Generating a wafer inspection process using bit failures and virtual inspection

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090017564A1 (en) 2005-02-02 2009-01-15 Texas Instruments Incorporated Method to detect and predict metal silicide defects in a microelectronic device during the manufacture of an integrated circuit

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Publication number Publication date
WO2013109714A1 (en) 2013-07-25
US20130182101A1 (en) 2013-07-18
CN108062558B (zh) 2022-10-11
JP6342046B2 (ja) 2018-06-13
TW201344822A (zh) 2013-11-01
KR102001356B1 (ko) 2019-07-17
CN104137120B (zh) 2018-01-02
KR20180093090A (ko) 2018-08-20
US9277186B2 (en) 2016-03-01
JP2017216466A (ja) 2017-12-07
JP6180435B2 (ja) 2017-08-16
KR20140124778A (ko) 2014-10-27
TWI625803B (zh) 2018-06-01
CN108062558A (zh) 2018-05-22
CN104137120A (zh) 2014-11-05
US20160163606A1 (en) 2016-06-09
US10014229B2 (en) 2018-07-03
JP2015509196A (ja) 2015-03-26

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