KR101862441B1 - 연마 장치 및 연마 방법 - Google Patents
연마 장치 및 연마 방법 Download PDFInfo
- Publication number
- KR101862441B1 KR101862441B1 KR1020150036588A KR20150036588A KR101862441B1 KR 101862441 B1 KR101862441 B1 KR 101862441B1 KR 1020150036588 A KR1020150036588 A KR 1020150036588A KR 20150036588 A KR20150036588 A KR 20150036588A KR 101862441 B1 KR101862441 B1 KR 101862441B1
- Authority
- KR
- South Korea
- Prior art keywords
- polished
- pressing
- polishing
- film thickness
- peripheral portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
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- H01L21/304—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- H01L21/02024—
-
- H01L22/12—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
-
- H01L2224/03602—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014057859 | 2014-03-20 | ||
| JPJP-P-2014-057859 | 2014-03-20 | ||
| JPJP-P-2014-228346 | 2014-11-10 | ||
| JP2014228346A JP6266493B2 (ja) | 2014-03-20 | 2014-11-10 | 研磨装置及び研磨方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150110347A KR20150110347A (ko) | 2015-10-02 |
| KR101862441B1 true KR101862441B1 (ko) | 2018-05-29 |
Family
ID=54111783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150036588A Active KR101862441B1 (ko) | 2014-03-20 | 2015-03-17 | 연마 장치 및 연마 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9550269B2 (https=) |
| JP (1) | JP6266493B2 (https=) |
| KR (1) | KR101862441B1 (https=) |
| CN (1) | CN104924198B (https=) |
| SG (1) | SG10201502022QA (https=) |
| TW (1) | TWI601599B (https=) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6266493B2 (ja) * | 2014-03-20 | 2018-01-24 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
| JP6473050B2 (ja) * | 2015-06-05 | 2019-02-20 | 株式会社荏原製作所 | 研磨装置 |
| JP6475604B2 (ja) * | 2015-11-24 | 2019-02-27 | 株式会社荏原製作所 | 研磨方法 |
| CN105575841B (zh) * | 2015-12-15 | 2019-08-02 | 北京中电科电子装备有限公司 | 一种晶圆测量装置 |
| JP6546845B2 (ja) * | 2015-12-18 | 2019-07-17 | 株式会社荏原製作所 | 研磨装置、制御方法及びプログラム |
| JP6560147B2 (ja) * | 2016-03-07 | 2019-08-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP6588854B2 (ja) | 2016-03-30 | 2019-10-09 | 株式会社荏原製作所 | 基板処理装置 |
| CN107813220A (zh) * | 2016-09-13 | 2018-03-20 | 清华大学 | 压力加载膜 |
| CN109844923B (zh) * | 2016-10-10 | 2023-07-11 | 应用材料公司 | 用于化学机械抛光的实时轮廓控制 |
| CN106378698B (zh) * | 2016-10-27 | 2018-12-11 | 上海华力微电子有限公司 | 一种化学机械研磨机台研磨压力补偿方法 |
| JP6535649B2 (ja) | 2016-12-12 | 2019-06-26 | 株式会社荏原製作所 | 基板処理装置、排出方法およびプログラム |
| KR102015647B1 (ko) * | 2017-03-24 | 2019-08-28 | 주식회사 케이씨텍 | 기판 이송 유닛 및 이를 포함하는 기판 연마 시스템 |
| JP6827663B2 (ja) | 2017-04-24 | 2021-02-10 | 株式会社荏原製作所 | 基板の研磨装置 |
| JP6948868B2 (ja) * | 2017-07-24 | 2021-10-13 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| CN107803744A (zh) * | 2017-09-26 | 2018-03-16 | 合肥新汇成微电子有限公司 | 一种半导体晶圆的背面研磨方法 |
| JP6985107B2 (ja) * | 2017-11-06 | 2021-12-22 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP7012519B2 (ja) | 2017-11-29 | 2022-01-28 | 株式会社荏原製作所 | 基板処理装置 |
| JP7244250B2 (ja) * | 2017-12-26 | 2023-03-22 | 株式会社荏原製作所 | 磁性素子、及びそれを用いた渦電流式センサ |
| KR102461597B1 (ko) * | 2018-01-04 | 2022-11-01 | 주식회사 케이씨텍 | 기판 처리 시스템 |
| CN110497317B (zh) * | 2019-07-25 | 2024-05-03 | 杭州电子科技大学 | 一种适用于自动打磨设备的恒压装置 |
| CN110524394A (zh) * | 2019-09-10 | 2019-12-03 | 艾国金 | 一种抛光装置及其吸盘固定机构 |
| JP2021091033A (ja) | 2019-12-10 | 2021-06-17 | キオクシア株式会社 | 研磨装置、研磨ヘッド、研磨方法、及び半導体装置の製造方法 |
| JP7443169B2 (ja) * | 2020-06-29 | 2024-03-05 | 株式会社荏原製作所 | 基板処理装置、基板処理方法、および基板処理方法を基板処理装置のコンピュータに実行させるためのプログラムを格納した記憶媒体 |
| CN111844831B (zh) * | 2020-07-06 | 2022-03-22 | 大连理工大学 | 一种轻质基材薄壁反射镜的制作方法 |
| JP7290140B2 (ja) * | 2020-09-09 | 2023-06-13 | 株式会社Sumco | ウェーハ研磨方法およびウェーハ研磨装置 |
| US11787008B2 (en) | 2020-12-18 | 2023-10-17 | Applied Materials, Inc. | Chemical mechanical polishing with applied magnetic field |
| CN112936085B (zh) * | 2021-02-04 | 2022-09-16 | 华海清科股份有限公司 | 一种化学机械抛光控制方法及控制系统 |
| JP7684058B2 (ja) | 2021-03-01 | 2025-05-27 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| US12343840B2 (en) | 2021-03-05 | 2025-07-01 | Applied Materials, Inc. | Control of processing parameters for substrate polishing with substrate precession |
| JP7575309B2 (ja) | 2021-03-17 | 2024-10-29 | 株式会社荏原製作所 | 膜厚測定方法、ノッチ部の検出方法、および研磨装置 |
| KR20250041367A (ko) * | 2023-09-18 | 2025-03-25 | 삼성전자주식회사 | 기판 처리 방법 |
| CN117697614A (zh) * | 2023-12-22 | 2024-03-15 | 华海清科(北京)科技有限公司 | 晶圆减薄系统、方法、装置、电子设备及存储介质 |
| JP2025187082A (ja) | 2024-06-13 | 2025-12-25 | 株式会社荏原製作所 | リテーナリングおよび基板保持装置 |
| CN119115785B (zh) * | 2024-09-26 | 2025-10-28 | 华海清科股份有限公司 | 用于晶圆加工的承载头及化学机械抛光设备 |
| CN121340121A (zh) * | 2025-12-17 | 2026-01-16 | 合肥晶合集成电路股份有限公司 | 化学机械研磨方法、装置及晶圆的制作方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2007331108A (ja) * | 2007-08-20 | 2007-12-27 | Ebara Corp | 基板研磨装置および基板研磨方法 |
| JP2010240837A (ja) | 2006-10-06 | 2010-10-28 | Ebara Corp | 研磨方法および研磨装置 |
| JP5113777B2 (ja) | 2004-11-01 | 2013-01-09 | 株式会社荏原製作所 | 研磨装置 |
| JP2014004683A (ja) * | 2008-08-21 | 2014-01-16 | Ebara Corp | 研磨方法 |
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| JP3311116B2 (ja) * | 1993-10-28 | 2002-08-05 | 株式会社東芝 | 半導体製造装置 |
| US5664987A (en) * | 1994-01-31 | 1997-09-09 | National Semiconductor Corporation | Methods and apparatus for control of polishing pad conditioning for wafer planarization |
| JP3158934B2 (ja) * | 1995-02-28 | 2001-04-23 | 三菱マテリアル株式会社 | ウェーハ研磨装置 |
| US5795215A (en) * | 1995-06-09 | 1998-08-18 | Applied Materials, Inc. | Method and apparatus for using a retaining ring to control the edge effect |
| USRE38854E1 (en) * | 1996-02-27 | 2005-10-25 | Ebara Corporation | Apparatus for and method for polishing workpiece |
| JP3795128B2 (ja) * | 1996-02-27 | 2006-07-12 | 株式会社荏原製作所 | ポリッシング装置 |
| US5964653A (en) * | 1997-07-11 | 1999-10-12 | Applied Materials, Inc. | Carrier head with a flexible membrane for a chemical mechanical polishing system |
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| JP3327289B2 (ja) * | 2000-03-29 | 2002-09-24 | 株式会社ニコン | 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体 |
| US6776692B1 (en) * | 1999-07-09 | 2004-08-17 | Applied Materials Inc. | Closed-loop control of wafer polishing in a chemical mechanical polishing system |
| DE60024559T2 (de) * | 1999-10-15 | 2006-08-24 | Ebara Corp. | Verfahren und Gerät zum Polieren eines Werkstückes |
| US7160739B2 (en) | 2001-06-19 | 2007-01-09 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
| KR100506934B1 (ko) * | 2003-01-10 | 2005-08-05 | 삼성전자주식회사 | 연마장치 및 이를 사용하는 연마방법 |
| JP2005011977A (ja) * | 2003-06-18 | 2005-01-13 | Ebara Corp | 基板研磨装置および基板研磨方法 |
| US7513818B2 (en) * | 2003-10-31 | 2009-04-07 | Applied Materials, Inc. | Polishing endpoint detection system and method using friction sensor |
| JP3889744B2 (ja) * | 2003-12-05 | 2007-03-07 | 株式会社東芝 | 研磨ヘッドおよび研磨装置 |
| CN1972780B (zh) * | 2004-06-21 | 2010-09-08 | 株式会社荏原制作所 | 抛光设备和抛光方法 |
| JP4689367B2 (ja) | 2004-07-09 | 2011-05-25 | 株式会社荏原製作所 | 研磨プロファイル又は研磨量の予測方法、研磨方法及び研磨装置 |
| US7150673B2 (en) | 2004-07-09 | 2006-12-19 | Ebara Corporation | Method for estimating polishing profile or polishing amount, polishing method and polishing apparatus |
| KR101011788B1 (ko) | 2004-11-01 | 2011-02-07 | 가부시키가이샤 에바라 세이사꾸쇼 | 톱링, 폴리싱장치 및 폴리싱방법 |
| TWI386989B (zh) * | 2005-02-25 | 2013-02-21 | 荏原製作所股份有限公司 | 研磨裝置及研磨方法 |
| US7175505B1 (en) * | 2006-01-09 | 2007-02-13 | Applied Materials, Inc. | Method for adjusting substrate processing times in a substrate polishing system |
| JP4342528B2 (ja) * | 2006-03-23 | 2009-10-14 | 株式会社荏原製作所 | ポリッシング方法 |
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| JP2007268678A (ja) * | 2006-03-31 | 2007-10-18 | Elpida Memory Inc | 研磨装置及び研磨装置の制御方法 |
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| JP2007287787A (ja) * | 2006-04-13 | 2007-11-01 | Elpida Memory Inc | 半導体装置の製造方法及び装置 |
| JP2008277450A (ja) * | 2007-04-26 | 2008-11-13 | Tokyo Seimitsu Co Ltd | Cmp装置の研磨条件管理装置及び研磨条件管理方法 |
| JP4996331B2 (ja) * | 2007-05-17 | 2012-08-08 | 株式会社荏原製作所 | 基板研磨装置および基板研磨方法 |
| JP2009033038A (ja) * | 2007-07-30 | 2009-02-12 | Elpida Memory Inc | Cmp装置及びcmpによるウェハー研磨方法 |
| JP5552401B2 (ja) * | 2010-09-08 | 2014-07-16 | 株式会社荏原製作所 | 研磨装置および方法 |
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| JP2013219248A (ja) * | 2012-04-10 | 2013-10-24 | Ebara Corp | 研磨装置および研磨方法 |
| KR20130131120A (ko) * | 2012-05-23 | 2013-12-03 | 삼성전자주식회사 | 연마 헤드용 가요성 멤브레인 |
| JP6046933B2 (ja) | 2012-07-10 | 2016-12-21 | 株式会社荏原製作所 | 研磨方法 |
| JP6196858B2 (ja) * | 2012-09-24 | 2017-09-13 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP6266493B2 (ja) * | 2014-03-20 | 2018-01-24 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
-
2014
- 2014-11-10 JP JP2014228346A patent/JP6266493B2/ja active Active
-
2015
- 2015-03-17 KR KR1020150036588A patent/KR101862441B1/ko active Active
- 2015-03-17 SG SG10201502022QA patent/SG10201502022QA/en unknown
- 2015-03-19 TW TW104108743A patent/TWI601599B/zh active
- 2015-03-20 CN CN201510125524.8A patent/CN104924198B/zh active Active
- 2015-03-20 US US14/664,691 patent/US9550269B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5113777B2 (ja) | 2004-11-01 | 2013-01-09 | 株式会社荏原製作所 | 研磨装置 |
| JP2010240837A (ja) | 2006-10-06 | 2010-10-28 | Ebara Corp | 研磨方法および研磨装置 |
| JP2007331108A (ja) * | 2007-08-20 | 2007-12-27 | Ebara Corp | 基板研磨装置および基板研磨方法 |
| JP2014004683A (ja) * | 2008-08-21 | 2014-01-16 | Ebara Corp | 研磨方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| SG10201502022QA (en) | 2015-10-29 |
| CN104924198A (zh) | 2015-09-23 |
| CN104924198B (zh) | 2018-11-16 |
| JP2015193068A (ja) | 2015-11-05 |
| US20150266159A1 (en) | 2015-09-24 |
| KR20150110347A (ko) | 2015-10-02 |
| US9550269B2 (en) | 2017-01-24 |
| TW201540424A (zh) | 2015-11-01 |
| TWI601599B (zh) | 2017-10-11 |
| JP6266493B2 (ja) | 2018-01-24 |
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| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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