CN104924198B - 研磨装置及研磨方法 - Google Patents

研磨装置及研磨方法 Download PDF

Info

Publication number
CN104924198B
CN104924198B CN201510125524.8A CN201510125524A CN104924198B CN 104924198 B CN104924198 B CN 104924198B CN 201510125524 A CN201510125524 A CN 201510125524A CN 104924198 B CN104924198 B CN 104924198B
Authority
CN
China
Prior art keywords
grinding
polished
pressing
press section
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510125524.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN104924198A (zh
Inventor
盐川阳
盐川阳一
八木圭太
小林洋
小林洋一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of CN104924198A publication Critical patent/CN104924198A/zh
Application granted granted Critical
Publication of CN104924198B publication Critical patent/CN104924198B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN201510125524.8A 2014-03-20 2015-03-20 研磨装置及研磨方法 Active CN104924198B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014-057859 2014-03-20
JP2014057859 2014-03-20
JP2014-228346 2014-11-10
JP2014228346A JP6266493B2 (ja) 2014-03-20 2014-11-10 研磨装置及び研磨方法

Publications (2)

Publication Number Publication Date
CN104924198A CN104924198A (zh) 2015-09-23
CN104924198B true CN104924198B (zh) 2018-11-16

Family

ID=54111783

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510125524.8A Active CN104924198B (zh) 2014-03-20 2015-03-20 研磨装置及研磨方法

Country Status (6)

Country Link
US (1) US9550269B2 (https=)
JP (1) JP6266493B2 (https=)
KR (1) KR101862441B1 (https=)
CN (1) CN104924198B (https=)
SG (1) SG10201502022QA (https=)
TW (1) TWI601599B (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6266493B2 (ja) * 2014-03-20 2018-01-24 株式会社荏原製作所 研磨装置及び研磨方法
JP6473050B2 (ja) * 2015-06-05 2019-02-20 株式会社荏原製作所 研磨装置
JP6475604B2 (ja) * 2015-11-24 2019-02-27 株式会社荏原製作所 研磨方法
CN105575841B (zh) * 2015-12-15 2019-08-02 北京中电科电子装备有限公司 一种晶圆测量装置
JP6546845B2 (ja) * 2015-12-18 2019-07-17 株式会社荏原製作所 研磨装置、制御方法及びプログラム
JP6560147B2 (ja) * 2016-03-07 2019-08-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6588854B2 (ja) 2016-03-30 2019-10-09 株式会社荏原製作所 基板処理装置
CN107813220A (zh) * 2016-09-13 2018-03-20 清华大学 压力加载膜
CN109844923B (zh) * 2016-10-10 2023-07-11 应用材料公司 用于化学机械抛光的实时轮廓控制
CN106378698B (zh) * 2016-10-27 2018-12-11 上海华力微电子有限公司 一种化学机械研磨机台研磨压力补偿方法
JP6535649B2 (ja) 2016-12-12 2019-06-26 株式会社荏原製作所 基板処理装置、排出方法およびプログラム
KR102015647B1 (ko) * 2017-03-24 2019-08-28 주식회사 케이씨텍 기판 이송 유닛 및 이를 포함하는 기판 연마 시스템
JP6827663B2 (ja) 2017-04-24 2021-02-10 株式会社荏原製作所 基板の研磨装置
JP6948868B2 (ja) * 2017-07-24 2021-10-13 株式会社荏原製作所 研磨装置および研磨方法
CN107803744A (zh) * 2017-09-26 2018-03-16 合肥新汇成微电子有限公司 一种半导体晶圆的背面研磨方法
JP6985107B2 (ja) * 2017-11-06 2021-12-22 株式会社荏原製作所 研磨方法および研磨装置
JP7012519B2 (ja) 2017-11-29 2022-01-28 株式会社荏原製作所 基板処理装置
JP7244250B2 (ja) * 2017-12-26 2023-03-22 株式会社荏原製作所 磁性素子、及びそれを用いた渦電流式センサ
KR102461597B1 (ko) * 2018-01-04 2022-11-01 주식회사 케이씨텍 기판 처리 시스템
CN110497317B (zh) * 2019-07-25 2024-05-03 杭州电子科技大学 一种适用于自动打磨设备的恒压装置
CN110524394A (zh) * 2019-09-10 2019-12-03 艾国金 一种抛光装置及其吸盘固定机构
JP2021091033A (ja) 2019-12-10 2021-06-17 キオクシア株式会社 研磨装置、研磨ヘッド、研磨方法、及び半導体装置の製造方法
JP7443169B2 (ja) * 2020-06-29 2024-03-05 株式会社荏原製作所 基板処理装置、基板処理方法、および基板処理方法を基板処理装置のコンピュータに実行させるためのプログラムを格納した記憶媒体
CN111844831B (zh) * 2020-07-06 2022-03-22 大连理工大学 一种轻质基材薄壁反射镜的制作方法
JP7290140B2 (ja) * 2020-09-09 2023-06-13 株式会社Sumco ウェーハ研磨方法およびウェーハ研磨装置
US11787008B2 (en) 2020-12-18 2023-10-17 Applied Materials, Inc. Chemical mechanical polishing with applied magnetic field
CN112936085B (zh) * 2021-02-04 2022-09-16 华海清科股份有限公司 一种化学机械抛光控制方法及控制系统
JP7684058B2 (ja) 2021-03-01 2025-05-27 株式会社荏原製作所 研磨装置および研磨方法
US12343840B2 (en) 2021-03-05 2025-07-01 Applied Materials, Inc. Control of processing parameters for substrate polishing with substrate precession
JP7575309B2 (ja) 2021-03-17 2024-10-29 株式会社荏原製作所 膜厚測定方法、ノッチ部の検出方法、および研磨装置
KR20250041367A (ko) * 2023-09-18 2025-03-25 삼성전자주식회사 기판 처리 방법
CN117697614A (zh) * 2023-12-22 2024-03-15 华海清科(北京)科技有限公司 晶圆减薄系统、方法、装置、电子设备及存储介质
JP2025187082A (ja) 2024-06-13 2025-12-25 株式会社荏原製作所 リテーナリングおよび基板保持装置
CN119115785B (zh) * 2024-09-26 2025-10-28 华海清科股份有限公司 用于晶圆加工的承载头及化学机械抛光设备
CN121340121A (zh) * 2025-12-17 2026-01-16 合肥晶合集成电路股份有限公司 化学机械研磨方法、装置及晶圆的制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6776692B1 (en) * 1999-07-09 2004-08-17 Applied Materials Inc. Closed-loop control of wafer polishing in a chemical mechanical polishing system
CN1626313A (zh) * 2003-12-05 2005-06-15 株式会社东芝 研磨头及研磨装置
USRE38854E1 (en) * 1996-02-27 2005-10-25 Ebara Corporation Apparatus for and method for polishing workpiece
JP4342528B2 (ja) * 2006-03-23 2009-10-14 株式会社荏原製作所 ポリッシング方法
CN102186627A (zh) * 2008-08-21 2011-09-14 株式会社荏原制作所 抛光衬底的方法和装置

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3311116B2 (ja) * 1993-10-28 2002-08-05 株式会社東芝 半導体製造装置
US5664987A (en) * 1994-01-31 1997-09-09 National Semiconductor Corporation Methods and apparatus for control of polishing pad conditioning for wafer planarization
JP3158934B2 (ja) * 1995-02-28 2001-04-23 三菱マテリアル株式会社 ウェーハ研磨装置
US5795215A (en) * 1995-06-09 1998-08-18 Applied Materials, Inc. Method and apparatus for using a retaining ring to control the edge effect
JP3795128B2 (ja) * 1996-02-27 2006-07-12 株式会社荏原製作所 ポリッシング装置
US5964653A (en) * 1997-07-11 1999-10-12 Applied Materials, Inc. Carrier head with a flexible membrane for a chemical mechanical polishing system
US6077151A (en) * 1999-05-17 2000-06-20 Vlsi Technology, Inc. Temperature control carrier head for chemical mechanical polishing process
JP3327289B2 (ja) * 2000-03-29 2002-09-24 株式会社ニコン 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体
DE60024559T2 (de) * 1999-10-15 2006-08-24 Ebara Corp. Verfahren und Gerät zum Polieren eines Werkstückes
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
KR100506934B1 (ko) * 2003-01-10 2005-08-05 삼성전자주식회사 연마장치 및 이를 사용하는 연마방법
JP2005011977A (ja) * 2003-06-18 2005-01-13 Ebara Corp 基板研磨装置および基板研磨方法
US7513818B2 (en) * 2003-10-31 2009-04-07 Applied Materials, Inc. Polishing endpoint detection system and method using friction sensor
CN1972780B (zh) * 2004-06-21 2010-09-08 株式会社荏原制作所 抛光设备和抛光方法
JP4689367B2 (ja) 2004-07-09 2011-05-25 株式会社荏原製作所 研磨プロファイル又は研磨量の予測方法、研磨方法及び研磨装置
US7150673B2 (en) 2004-07-09 2006-12-19 Ebara Corporation Method for estimating polishing profile or polishing amount, polishing method and polishing apparatus
JP4597634B2 (ja) 2004-11-01 2010-12-15 株式会社荏原製作所 トップリング、基板の研磨装置及び研磨方法
KR101011788B1 (ko) 2004-11-01 2011-02-07 가부시키가이샤 에바라 세이사꾸쇼 톱링, 폴리싱장치 및 폴리싱방법
TWI386989B (zh) * 2005-02-25 2013-02-21 荏原製作所股份有限公司 研磨裝置及研磨方法
US7175505B1 (en) * 2006-01-09 2007-02-13 Applied Materials, Inc. Method for adjusting substrate processing times in a substrate polishing system
US7115017B1 (en) * 2006-03-31 2006-10-03 Novellus Systems, Inc. Methods for controlling the pressures of adjustable pressure zones of a work piece carrier during chemical mechanical planarization
JP2007268678A (ja) * 2006-03-31 2007-10-18 Elpida Memory Inc 研磨装置及び研磨装置の制御方法
JP4790475B2 (ja) * 2006-04-05 2011-10-12 株式会社荏原製作所 研磨装置、研磨方法、および基板の膜厚測定プログラム
JP2007287787A (ja) * 2006-04-13 2007-11-01 Elpida Memory Inc 半導体装置の製造方法及び装置
JP5006883B2 (ja) * 2006-10-06 2012-08-22 株式会社荏原製作所 加工終点検知方法および加工装置
JP2008277450A (ja) * 2007-04-26 2008-11-13 Tokyo Seimitsu Co Ltd Cmp装置の研磨条件管理装置及び研磨条件管理方法
JP4996331B2 (ja) * 2007-05-17 2012-08-08 株式会社荏原製作所 基板研磨装置および基板研磨方法
JP2009033038A (ja) * 2007-07-30 2009-02-12 Elpida Memory Inc Cmp装置及びcmpによるウェハー研磨方法
JP2007331108A (ja) * 2007-08-20 2007-12-27 Ebara Corp 基板研磨装置および基板研磨方法
JP5552401B2 (ja) * 2010-09-08 2014-07-16 株式会社荏原製作所 研磨装置および方法
JP5980476B2 (ja) * 2010-12-27 2016-08-31 株式会社荏原製作所 ポリッシング装置およびポリッシング方法
US8774958B2 (en) * 2011-04-29 2014-07-08 Applied Materials, Inc. Selection of polishing parameters to generate removal profile
JP2013219248A (ja) * 2012-04-10 2013-10-24 Ebara Corp 研磨装置および研磨方法
KR20130131120A (ko) * 2012-05-23 2013-12-03 삼성전자주식회사 연마 헤드용 가요성 멤브레인
JP6046933B2 (ja) 2012-07-10 2016-12-21 株式会社荏原製作所 研磨方法
JP6196858B2 (ja) * 2012-09-24 2017-09-13 株式会社荏原製作所 研磨方法および研磨装置
JP6266493B2 (ja) * 2014-03-20 2018-01-24 株式会社荏原製作所 研磨装置及び研磨方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE38854E1 (en) * 1996-02-27 2005-10-25 Ebara Corporation Apparatus for and method for polishing workpiece
US6776692B1 (en) * 1999-07-09 2004-08-17 Applied Materials Inc. Closed-loop control of wafer polishing in a chemical mechanical polishing system
CN1626313A (zh) * 2003-12-05 2005-06-15 株式会社东芝 研磨头及研磨装置
JP4342528B2 (ja) * 2006-03-23 2009-10-14 株式会社荏原製作所 ポリッシング方法
CN102186627A (zh) * 2008-08-21 2011-09-14 株式会社荏原制作所 抛光衬底的方法和装置

Also Published As

Publication number Publication date
SG10201502022QA (en) 2015-10-29
CN104924198A (zh) 2015-09-23
KR101862441B1 (ko) 2018-05-29
JP2015193068A (ja) 2015-11-05
US20150266159A1 (en) 2015-09-24
KR20150110347A (ko) 2015-10-02
US9550269B2 (en) 2017-01-24
TW201540424A (zh) 2015-11-01
TWI601599B (zh) 2017-10-11
JP6266493B2 (ja) 2018-01-24

Similar Documents

Publication Publication Date Title
CN104924198B (zh) 研磨装置及研磨方法
TWI644760B (zh) 研磨裝置及研磨方法
JP5552401B2 (ja) 研磨装置および方法
KR102094274B1 (ko) 연마 방법 및 연마 장치
TWI706828B (zh) 研磨裝置、控制方法及記憶媒體
KR101969600B1 (ko) 기판 보유 지지 장치
JP2014513434A (ja) 除去プロファイルを生成するための研磨パラメータの選択
CN109844923B (zh) 用于化学机械抛光的实时轮廓控制
TWI841926B (zh) 用於使用成本函數或預期的未來參數變化對基板拋光期間的處理參數的控制的電腦程式產品、方法及拋光系統
US9573241B2 (en) Polishing apparatus and polishing method
KR20220116316A (ko) 압전 압력 제어를 갖는 연마 캐리어 헤드
KR20190063417A (ko) 기판 처리 장치
US20230139947A1 (en) Polishing method, polishing apparatus, and computer-readable storage medium storing program
KR102678211B1 (ko) 프레스톤 행렬 생성기
US12183642B2 (en) Film-thickness measuring method, method of detecting notch portion, and polishing apparatus
US20220168864A1 (en) Polishing recipe determination device
US20240189959A1 (en) Polishing pad, polishing apparatus, and polishing method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant