KR101808197B1 - 발광 다이오드를 제조하기 위한 방법 - Google Patents

발광 다이오드를 제조하기 위한 방법 Download PDF

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KR101808197B1
KR101808197B1 KR1020127011310A KR20127011310A KR101808197B1 KR 101808197 B1 KR101808197 B1 KR 101808197B1 KR 1020127011310 A KR1020127011310 A KR 1020127011310A KR 20127011310 A KR20127011310 A KR 20127011310A KR 101808197 B1 KR101808197 B1 KR 101808197B1
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KR20120081177A (ko
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페터 슈타우스
필리프 드레히젤
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

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KR1020127011310A 2009-09-30 2010-09-28 발광 다이오드를 제조하기 위한 방법 Active KR101808197B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009047881.7A DE102009047881B4 (de) 2009-09-30 2009-09-30 Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur
DE102009047881.7 2009-09-30
PCT/EP2010/064353 WO2011039181A1 (de) 2009-09-30 2010-09-28 Verfahren zur herstellung einer leuchtdiode

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KR20120081177A KR20120081177A (ko) 2012-07-18
KR101808197B1 true KR101808197B1 (ko) 2017-12-12

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US (2) US8828768B2 (https=)
EP (1) EP2483914B1 (https=)
JP (3) JP5748758B2 (https=)
KR (1) KR101808197B1 (https=)
CN (2) CN102576656B (https=)
DE (1) DE102009047881B4 (https=)
WO (1) WO2011039181A1 (https=)

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KR20120032329A (ko) 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자
DE102010046792A1 (de) 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102011114665B4 (de) 2011-09-30 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements
EP2696365B1 (en) * 2012-08-09 2021-06-23 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device using a semiconductor buffer structure
US8946773B2 (en) 2012-08-09 2015-02-03 Samsung Electronics Co., Ltd. Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure
JP5425284B1 (ja) 2012-09-21 2014-02-26 株式会社東芝 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法
KR101464854B1 (ko) 2013-01-14 2014-11-25 주식회사 엘지실트론 반도체 기판
JP6275817B2 (ja) * 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
JP6138359B2 (ja) 2013-06-11 2017-05-31 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 窒化物系化合物半導体素子を製造する方法
JP5996489B2 (ja) * 2013-07-09 2016-09-21 株式会社東芝 窒化物半導体ウェーハ、窒化物半導体素子及び窒化物半導体ウェーハの製造方法
JP2014063988A (ja) * 2013-07-23 2014-04-10 Toshiba Corp 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法
KR102098250B1 (ko) 2013-10-21 2020-04-08 삼성전자 주식회사 반도체 버퍼 구조체, 이를 포함하는 반도체 소자 및 반도체 버퍼 구조체를 이용한 반도체 소자 제조방법
DE102014105303A1 (de) 2014-04-14 2015-10-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Schichtstruktur als Pufferschicht eines Halbleiterbauelements sowie Schichtstruktur als Pufferschicht eines Halbleiterbauelements
US10483351B2 (en) * 2015-09-04 2019-11-19 Nanyang Technological University Method of manufacturing a substrate with reduced threading dislocation density
JP6264628B2 (ja) * 2017-01-13 2018-01-24 アルパッド株式会社 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法
JP6437083B2 (ja) * 2017-12-06 2018-12-12 アルパッド株式会社 半導体ウェーハ及び半導体素子
EP3731260A4 (en) 2017-12-19 2021-12-22 Sumco Corporation METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
DE102018101558A1 (de) 2018-01-24 2019-07-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Nitrid-Verbindungshalbleiter-Bauelements
GB2612372B (en) * 2021-11-02 2024-11-06 Iqe Plc A layered structure

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JP2007096331A (ja) * 2005-09-27 2007-04-12 Philips Lumileds Lightng Co Llc Ｉｉｉ−ｖ族発光デバイスを成長させるための基板
DE102007020979A1 (de) * 2007-04-27 2008-10-30 Azzurro Semiconductors Ag Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie

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JP2001148348A (ja) * 1997-03-13 2001-05-29 Nec Corp ＧａＮ系半導体素子とその製造方法
JP2007096331A (ja) * 2005-09-27 2007-04-12 Philips Lumileds Lightng Co Llc Ｉｉｉ−ｖ族発光デバイスを成長させるための基板
DE102007020979A1 (de) * 2007-04-27 2008-10-30 Azzurro Semiconductors Ag Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie

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US9184337B2 (en) 2015-11-10
JP6216349B2 (ja) 2017-10-18
EP2483914B1 (de) 2017-09-06
KR20120081177A (ko) 2012-07-18
DE102009047881A1 (de) 2011-04-21
US20140329350A1 (en) 2014-11-06
JP2015181180A (ja) 2015-10-15
CN102576656B (zh) 2016-01-20
CN102576656A (zh) 2012-07-11
US8828768B2 (en) 2014-09-09
CN105551932A (zh) 2016-05-04
JP5748758B2 (ja) 2015-07-15
JP2013506980A (ja) 2013-02-28
EP2483914A1 (de) 2012-08-08
DE102009047881B4 (de) 2022-03-03
WO2011039181A1 (de) 2011-04-07
JP6463813B2 (ja) 2019-02-06
JP2018022909A (ja) 2018-02-08
CN105551932B (zh) 2019-04-09
US20130065342A1 (en) 2013-03-14

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