KR101802580B1 - 에칭 방법 및 기억 매체 - Google Patents

에칭 방법 및 기억 매체 Download PDF

Info

Publication number
KR101802580B1
KR101802580B1 KR1020150088197A KR20150088197A KR101802580B1 KR 101802580 B1 KR101802580 B1 KR 101802580B1 KR 1020150088197 A KR1020150088197 A KR 1020150088197A KR 20150088197 A KR20150088197 A KR 20150088197A KR 101802580 B1 KR101802580 B1 KR 101802580B1
Authority
KR
South Korea
Prior art keywords
gas
chamber
etching
film
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150088197A
Other languages
English (en)
Korean (ko)
Other versions
KR20160001656A (ko
Inventor
사토시 도다
노부히로 다카하시
히로유키 다카하시
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20160001656A publication Critical patent/KR20160001656A/ko
Application granted granted Critical
Publication of KR101802580B1 publication Critical patent/KR101802580B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
    • G05B19/182—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by the machine tool function, e.g. thread cutting, cam making, tool direction control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Human Computer Interaction (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
KR1020150088197A 2014-06-27 2015-06-22 에칭 방법 및 기억 매체 Active KR101802580B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-132482 2014-06-27
JP2014132482A JP2016012609A (ja) 2014-06-27 2014-06-27 エッチング方法

Publications (2)

Publication Number Publication Date
KR20160001656A KR20160001656A (ko) 2016-01-06
KR101802580B1 true KR101802580B1 (ko) 2017-11-28

Family

ID=54931310

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150088197A Active KR101802580B1 (ko) 2014-06-27 2015-06-22 에칭 방법 및 기억 매체

Country Status (4)

Country Link
US (1) US20150380268A1 (enExample)
JP (1) JP2016012609A (enExample)
KR (1) KR101802580B1 (enExample)
TW (1) TWI648790B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109075075B (zh) * 2016-04-05 2023-06-06 Tes股份有限公司 硅氧化膜的选择性蚀刻方法
CN108251895A (zh) 2016-12-29 2018-07-06 江苏鲁汶仪器有限公司 一种氟化氢气相腐蚀设备及方法
WO2018220973A1 (ja) * 2017-05-30 2018-12-06 東京エレクトロン株式会社 エッチング方法
CN108847391B (zh) * 2018-06-01 2021-06-08 北京北方华创微电子装备有限公司 一种非等离子干法刻蚀方法
JP7204348B2 (ja) * 2018-06-08 2023-01-16 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN111584360B (zh) * 2019-02-18 2024-04-19 东京毅力科创株式会社 蚀刻方法
KR20220161474A (ko) * 2020-04-01 2022-12-06 램 리써치 코포레이션 반도체 재료의 선택적인 정밀 에칭
CN113785382B (zh) * 2020-04-10 2023-10-27 株式会社日立高新技术 蚀刻方法
CN116034454A (zh) * 2021-04-28 2023-04-28 东京毅力科创株式会社 蚀刻方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050609A (ja) 2000-08-01 2002-02-15 Asm Japan Kk 半導体基板の処理方法
JP2003031548A (ja) * 2001-07-13 2003-01-31 M Fsi Kk 基板表面の処理方法
JP2006167849A (ja) 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
US20060207968A1 (en) * 2005-03-08 2006-09-21 Mumbauer Paul D Selective etching of oxides from substrates

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088231B2 (ja) * 1989-10-02 1996-01-29 大日本スクリーン製造株式会社 絶縁膜の選択的除去方法
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US7025831B1 (en) * 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
JP4833512B2 (ja) 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
JP2005302897A (ja) * 2004-04-08 2005-10-27 Sony Corp ハードエッチングマスクの除去方法および半導体装置の製造方法
JP4105656B2 (ja) * 2004-05-13 2008-06-25 株式会社東芝 半導体装置及びその製造方法
SG10201508025VA (en) * 2005-10-05 2015-10-29 Entegris Inc Composition and method for selectively etching gate spacer oxide material
JP5084250B2 (ja) 2006-12-26 2012-11-28 東京エレクトロン株式会社 ガス処理装置およびガス処理方法ならびに記憶媒体
JP4982457B2 (ja) * 2008-09-11 2012-07-25 信越化学工業株式会社 パターン形成方法
JP2012043919A (ja) * 2010-08-18 2012-03-01 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
EP2458037A1 (en) * 2010-11-30 2012-05-30 Imec A method for precisely controlled masked anodization
JP5898690B2 (ja) * 2010-12-07 2016-04-06 エスピーティーエス テクノロジーズ リミティド 電気−機械システムを製造するためのプロセス
JP5914010B2 (ja) * 2012-01-30 2016-05-11 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP6040609B2 (ja) * 2012-07-20 2016-12-07 東京エレクトロン株式会社 成膜装置及び成膜方法
CN103435002A (zh) * 2013-08-05 2013-12-11 中航（重庆）微电子有限公司 Mems牺牲层刻蚀方法
JP2016025195A (ja) * 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
JP6494226B2 (ja) * 2014-09-16 2019-04-03 東京エレクトロン株式会社 エッチング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050609A (ja) 2000-08-01 2002-02-15 Asm Japan Kk 半導体基板の処理方法
JP2003031548A (ja) * 2001-07-13 2003-01-31 M Fsi Kk 基板表面の処理方法
JP2006167849A (ja) 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
US20060207968A1 (en) * 2005-03-08 2006-09-21 Mumbauer Paul D Selective etching of oxides from substrates

Also Published As

Publication number Publication date
TWI648790B (zh) 2019-01-21
TW201612976A (en) 2016-04-01
JP2016012609A (ja) 2016-01-21
US20150380268A1 (en) 2015-12-31
KR20160001656A (ko) 2016-01-06

Similar Documents

Publication Publication Date Title
KR101790406B1 (ko) 에칭 방법 및 기억 매체
KR101802580B1 (ko) 에칭 방법 및 기억 매체
KR101802595B1 (ko) 에칭 방법 및 기억 매체
CN110581067B (zh) 蚀刻方法及蚀刻装置
KR101884510B1 (ko) 에칭 방법
KR102181910B1 (ko) 에칭 방법 및 잔사 제거 방법
CN106796881B (zh) 蚀刻方法
KR101836591B1 (ko) 에칭 방법
JP6073172B2 (ja) エッチング方法
KR20200010411A (ko) 에칭 방법
KR20200143260A (ko) 에칭 방법 및 에칭 장치
WO2015186461A1 (ja) エッチング方法
JP2015073035A (ja) エッチング方法

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20150622

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20160212

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20150622

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20170201

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20170808

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20170201

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20170808

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20170303

Comment text: Amendment to Specification, etc.

PX0701 Decision of registration after re-examination

Patent event date: 20170919

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20170901

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20170808

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20170303

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20171122

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20171122

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20201119

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20211118

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20221019

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20231019

Start annual number: 7

End annual number: 7