TWI648790B - Etching method - Google Patents

Etching method Download PDF

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Publication number
TWI648790B
TWI648790B TW104119586A TW104119586A TWI648790B TW I648790 B TWI648790 B TW I648790B TW 104119586 A TW104119586 A TW 104119586A TW 104119586 A TW104119586 A TW 104119586A TW I648790 B TWI648790 B TW I648790B
Authority
TW
Taiwan
Prior art keywords
gas
etching
chamber
film
wafer
Prior art date
Application number
TW104119586A
Other languages
English (en)
Chinese (zh)
Other versions
TW201612976A (en
Inventor
戶田聡
高橋信博
髙橋宏幸
Original Assignee
日商東京威力科創股份有限公司
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Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201612976A publication Critical patent/TW201612976A/zh
Application granted granted Critical
Publication of TWI648790B publication Critical patent/TWI648790B/zh

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Classifications

    • H10P50/283—
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
    • G05B19/182—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by the machine tool function, e.g. thread cutting, cam making, tool direction control
    • H10P72/0424—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Human Computer Interaction (AREA)
  • Automation & Control Theory (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
TW104119586A 2014-06-27 2015-06-17 Etching method TWI648790B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014132482A JP2016012609A (ja) 2014-06-27 2014-06-27 エッチング方法
JP2014-132482 2014-06-27

Publications (2)

Publication Number Publication Date
TW201612976A TW201612976A (en) 2016-04-01
TWI648790B true TWI648790B (zh) 2019-01-21

Family

ID=54931310

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104119586A TWI648790B (zh) 2014-06-27 2015-06-17 Etching method

Country Status (4)

Country Link
US (1) US20150380268A1 (enExample)
JP (1) JP2016012609A (enExample)
KR (1) KR101802580B1 (enExample)
TW (1) TWI648790B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109075075B (zh) * 2016-04-05 2023-06-06 Tes股份有限公司 硅氧化膜的选择性蚀刻方法
CN108251895A (zh) * 2016-12-29 2018-07-06 江苏鲁汶仪器有限公司 一种氟化氢气相腐蚀设备及方法
WO2018220973A1 (ja) * 2017-05-30 2018-12-06 東京エレクトロン株式会社 エッチング方法
CN108847391B (zh) * 2018-06-01 2021-06-08 北京北方华创微电子装备有限公司 一种非等离子干法刻蚀方法
JP7204348B2 (ja) * 2018-06-08 2023-01-16 東京エレクトロン株式会社 エッチング方法およびエッチング装置
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
WO2021202411A1 (en) * 2020-04-01 2021-10-07 Lam Research Corporation Selective precision etching of semiconductor materials
JP7065254B2 (ja) * 2020-04-10 2022-05-11 株式会社日立ハイテク エッチング方法
CN116034454A (zh) * 2021-04-28 2023-04-28 东京毅力科创株式会社 蚀刻方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US20120132529A1 (en) * 2010-11-30 2012-05-31 Katholieke Universiteit Leuven, K.U.Leuven R&D Method for precisely controlled masked anodization
US20130334628A1 (en) * 2010-12-07 2013-12-19 Primaxx, Inc. Process for manufacturing electro-mechanical systems

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088231B2 (ja) * 1989-10-02 1996-01-29 大日本スクリーン製造株式会社 絶縁膜の選択的除去方法
US7025831B1 (en) * 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
JP2002050609A (ja) 2000-08-01 2002-02-15 Asm Japan Kk 半導体基板の処理方法
JP3526284B2 (ja) * 2001-07-13 2004-05-10 エム・エフエスアイ株式会社 基板表面の処理方法
JP4833512B2 (ja) 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
JP2005302897A (ja) * 2004-04-08 2005-10-27 Sony Corp ハードエッチングマスクの除去方法および半導体装置の製造方法
JP4105656B2 (ja) * 2004-05-13 2008-06-25 株式会社東芝 半導体装置及びその製造方法
JP2006167849A (ja) 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
WO2008088300A2 (en) * 2005-03-08 2008-07-24 Primaxx, Inc. Selective etching of oxides from substrates
CN101496146A (zh) * 2005-10-05 2009-07-29 高级技术材料公司 选择性蚀刻栅极隔片氧化物材料的组合物和方法
JP5084250B2 (ja) 2006-12-26 2012-11-28 東京エレクトロン株式会社 ガス処理装置およびガス処理方法ならびに記憶媒体
JP4982457B2 (ja) * 2008-09-11 2012-07-25 信越化学工業株式会社 パターン形成方法
JP2012043919A (ja) * 2010-08-18 2012-03-01 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
JP5914010B2 (ja) * 2012-01-30 2016-05-11 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP6040609B2 (ja) * 2012-07-20 2016-12-07 東京エレクトロン株式会社 成膜装置及び成膜方法
CN103435002A (zh) * 2013-08-05 2013-12-11 中航（重庆）微电子有限公司 Mems牺牲层刻蚀方法
JP2016025195A (ja) * 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
JP6494226B2 (ja) * 2014-09-16 2019-04-03 東京エレクトロン株式会社 エッチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US20120132529A1 (en) * 2010-11-30 2012-05-31 Katholieke Universiteit Leuven, K.U.Leuven R&D Method for precisely controlled masked anodization
US20130334628A1 (en) * 2010-12-07 2013-12-19 Primaxx, Inc. Process for manufacturing electro-mechanical systems

Also Published As

Publication number Publication date
TW201612976A (en) 2016-04-01
KR20160001656A (ko) 2016-01-06
US20150380268A1 (en) 2015-12-31
JP2016012609A (ja) 2016-01-21
KR101802580B1 (ko) 2017-11-28

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