KR101799602B1 - 레지스트 스트리핑 조성물 및 전기 소자의 제조 방법 - Google Patents

레지스트 스트리핑 조성물 및 전기 소자의 제조 방법 Download PDF

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KR101799602B1
KR101799602B1 KR1020117029143A KR20117029143A KR101799602B1 KR 101799602 B1 KR101799602 B1 KR 101799602B1 KR 1020117029143 A KR1020117029143 A KR 1020117029143A KR 20117029143 A KR20117029143 A KR 20117029143A KR 101799602 B1 KR101799602 B1 KR 101799602B1
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KR20120024714A (ko
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안드레아스 클립
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바스프 에스이
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Paints Or Removers (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020117029143A 2009-05-07 2010-04-20 레지스트 스트리핑 조성물 및 전기 소자의 제조 방법 Active KR101799602B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17617909P 2009-05-07 2009-05-07
US61/176,179 2009-05-07
PCT/EP2010/055205 WO2010127943A1 (en) 2009-05-07 2010-04-20 Resist stripping compositions and methods for manufacturing electrical devices

Publications (2)

Publication Number Publication Date
KR20120024714A KR20120024714A (ko) 2012-03-14
KR101799602B1 true KR101799602B1 (ko) 2017-11-20

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KR1020117029143A Active KR101799602B1 (ko) 2009-05-07 2010-04-20 레지스트 스트리핑 조성물 및 전기 소자의 제조 방법

Country Status (11)

Country Link
US (1) US9146471B2 (https=)
EP (1) EP2427804B1 (https=)
JP (1) JP5836932B2 (https=)
KR (1) KR101799602B1 (https=)
CN (1) CN102804074B (https=)
IL (1) IL215954A (https=)
MY (1) MY158776A (https=)
RU (1) RU2551841C2 (https=)
SG (2) SG10201402081TA (https=)
TW (1) TWI492001B (https=)
WO (1) WO2010127943A1 (https=)

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RU2585322C2 (ru) 2011-03-18 2016-05-27 Басф Се Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее
US9223221B2 (en) 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
RU2015104902A (ru) * 2012-07-16 2016-09-10 Басф Се Композиция, используемая в изготовлении интегральных схем, оптических устройств, микромашин и механических прецизионных устройств
KR101548420B1 (ko) * 2012-07-24 2015-08-28 주식회사 엘지화학 금속입자층 형성 방법 및 이를 이용하여 제조된 발광소자
JP6165665B2 (ja) 2013-05-30 2017-07-19 信越化学工業株式会社 基板の洗浄方法
US9472420B2 (en) 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
CN104774697A (zh) * 2015-04-28 2015-07-15 苏州永创达电子有限公司 一种液晶清洗剂
US9976111B2 (en) 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
KR102384908B1 (ko) * 2015-11-25 2022-04-08 삼성전자주식회사 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법
KR20180087624A (ko) 2017-01-25 2018-08-02 동우 화인켐 주식회사 레지스트 박리액 조성물
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
US10948826B2 (en) * 2018-03-07 2021-03-16 Versum Materials Us, Llc Photoresist stripper
KR102735628B1 (ko) 2018-12-19 2024-12-02 삼성전자주식회사 반도체 패키지의 제조방법
JP7273660B2 (ja) * 2019-08-30 2023-05-15 キオクシア株式会社 半導体製造装置、および半導体装置の製造方法
KR102794011B1 (ko) 2020-10-30 2025-04-15 주식회사 이엔에프테크놀로지 포토레지스트 제거용 박리액 조성물
KR102933956B1 (ko) * 2021-05-03 2026-03-04 삼성전자주식회사 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법
TWI861658B (zh) * 2022-12-30 2024-11-11 達興材料股份有限公司 清潔組合物、清洗方法和半導體製造方法
KR20240140690A (ko) * 2023-03-17 2024-09-24 삼성전자주식회사 박리액 조성물
CN117031895B (zh) * 2023-08-17 2024-10-15 浙江奥首材料科技有限公司 一种芯片光刻胶剥离液、其制备方法及用途

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Also Published As

Publication number Publication date
CN102804074A (zh) 2012-11-28
IL215954A0 (en) 2012-01-31
US20120058644A1 (en) 2012-03-08
RU2011149552A (ru) 2013-06-20
MY158776A (en) 2016-11-15
RU2551841C2 (ru) 2015-05-27
TWI492001B (zh) 2015-07-11
EP2427804A1 (en) 2012-03-14
WO2010127943A1 (en) 2010-11-11
JP2012526295A (ja) 2012-10-25
TW201044124A (en) 2010-12-16
IL215954A (en) 2017-01-31
SG10201402081TA (en) 2014-07-30
JP5836932B2 (ja) 2015-12-24
SG175820A1 (en) 2011-12-29
CN102804074B (zh) 2015-03-04
US9146471B2 (en) 2015-09-29
KR20120024714A (ko) 2012-03-14
EP2427804B1 (en) 2019-10-02

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