SG10201402081TA - Resist stripping compositions and methods for manufacturing electrical devices - Google Patents
Resist stripping compositions and methods for manufacturing electrical devicesInfo
- Publication number
- SG10201402081TA SG10201402081TA SG10201402081TA SG10201402081TA SG10201402081TA SG 10201402081T A SG10201402081T A SG 10201402081TA SG 10201402081T A SG10201402081T A SG 10201402081TA SG 10201402081T A SG10201402081T A SG 10201402081TA SG 10201402081T A SG10201402081T A SG 10201402081TA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- electrical devices
- resist stripping
- manufacturing electrical
- stripping compositions
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
- H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
- H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Detergent Compositions (AREA)
- Paints Or Removers (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17617909P | 2009-05-07 | 2009-05-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201402081TA true SG10201402081TA (en) | 2014-07-30 |
Family
ID=42271987
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201402081TA SG10201402081TA (en) | 2009-05-07 | 2010-04-20 | Resist stripping compositions and methods for manufacturing electrical devices |
| SG2011079381A SG175820A1 (en) | 2009-05-07 | 2010-04-20 | Resist stripping compositions and methods for manufacturing electrical devices |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011079381A SG175820A1 (en) | 2009-05-07 | 2010-04-20 | Resist stripping compositions and methods for manufacturing electrical devices |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9146471B2 (https=) |
| EP (1) | EP2427804B1 (https=) |
| JP (1) | JP5836932B2 (https=) |
| KR (1) | KR101799602B1 (https=) |
| CN (1) | CN102804074B (https=) |
| IL (1) | IL215954A (https=) |
| MY (1) | MY158776A (https=) |
| RU (1) | RU2551841C2 (https=) |
| SG (2) | SG10201402081TA (https=) |
| TW (1) | TWI492001B (https=) |
| WO (1) | WO2010127943A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2585322C2 (ru) | 2011-03-18 | 2016-05-27 | Басф Се | Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее |
| US9223221B2 (en) | 2012-03-16 | 2015-12-29 | Basf Se | Photoresist stripping and cleaning composition, method of its preparation and its use |
| RU2015104902A (ru) * | 2012-07-16 | 2016-09-10 | Басф Се | Композиция, используемая в изготовлении интегральных схем, оптических устройств, микромашин и механических прецизионных устройств |
| KR101548420B1 (ko) * | 2012-07-24 | 2015-08-28 | 주식회사 엘지화학 | 금속입자층 형성 방법 및 이를 이용하여 제조된 발광소자 |
| JP6165665B2 (ja) | 2013-05-30 | 2017-07-19 | 信越化学工業株式会社 | 基板の洗浄方法 |
| US9472420B2 (en) | 2013-12-20 | 2016-10-18 | Air Products And Chemicals, Inc. | Composition for titanium nitride hard mask and etch residue removal |
| CN104774697A (zh) * | 2015-04-28 | 2015-07-15 | 苏州永创达电子有限公司 | 一种液晶清洗剂 |
| US9976111B2 (en) | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
| KR102384908B1 (ko) * | 2015-11-25 | 2022-04-08 | 삼성전자주식회사 | 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법 |
| KR20180087624A (ko) | 2017-01-25 | 2018-08-02 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 |
| US11175587B2 (en) * | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
| US10948826B2 (en) * | 2018-03-07 | 2021-03-16 | Versum Materials Us, Llc | Photoresist stripper |
| KR102735628B1 (ko) | 2018-12-19 | 2024-12-02 | 삼성전자주식회사 | 반도체 패키지의 제조방법 |
| JP7273660B2 (ja) * | 2019-08-30 | 2023-05-15 | キオクシア株式会社 | 半導体製造装置、および半導体装置の製造方法 |
| KR102794011B1 (ko) | 2020-10-30 | 2025-04-15 | 주식회사 이엔에프테크놀로지 | 포토레지스트 제거용 박리액 조성물 |
| KR102933956B1 (ko) * | 2021-05-03 | 2026-03-04 | 삼성전자주식회사 | 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법 |
| TWI861658B (zh) * | 2022-12-30 | 2024-11-11 | 達興材料股份有限公司 | 清潔組合物、清洗方法和半導體製造方法 |
| KR20240140690A (ko) * | 2023-03-17 | 2024-09-24 | 삼성전자주식회사 | 박리액 조성물 |
| CN117031895B (zh) * | 2023-08-17 | 2024-10-15 | 浙江奥首材料科技有限公司 | 一种芯片光刻胶剥离液、其制备方法及用途 |
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| SU1834588A1 (ru) * | 1989-12-07 | 1996-07-10 | Научно-исследовательский институт точного машиностроения | Способ формирования рельефа интегральных микросхем |
| CA2193905A1 (en) | 1996-12-24 | 1998-06-24 | Luc Ouellet | Integrated processing for an etch module |
| JPH10239865A (ja) * | 1997-02-24 | 1998-09-11 | Jsr Corp | ネガ型フォトレジスト用剥離液組成物 |
| US6218078B1 (en) | 1997-09-24 | 2001-04-17 | Advanced Micro Devices, Inc. | Creation of an etch hardmask by spin-on technique |
| US5919599A (en) | 1997-09-30 | 1999-07-06 | Brewer Science, Inc. | Thermosetting anti-reflective coatings at deep ultraviolet |
| US7547669B2 (en) | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
| US7579308B2 (en) * | 1998-07-06 | 2009-08-25 | Ekc/Dupont Electronics Technologies | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| RU2145156C1 (ru) * | 1999-02-09 | 2000-01-27 | Нижегородский государственный технический университет | Способ формирования структур в микроэлектронике |
| GB0009112D0 (en) * | 2000-04-12 | 2000-05-31 | Ekc Technology Ltd | Inhibition of titanium corrosion |
| JP3738996B2 (ja) * | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
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| CN100338530C (zh) * | 2001-11-02 | 2007-09-19 | 三菱瓦斯化学株式会社 | 剥离抗蚀剂的方法 |
| US20030148624A1 (en) | 2002-01-31 | 2003-08-07 | Kazuto Ikemoto | Method for removing resists |
| KR101017738B1 (ko) * | 2002-03-12 | 2011-02-28 | 미츠비시 가스 가가쿠 가부시키가이샤 | 포토레지스트 박리제 조성물 및 세정 조성물 |
| KR100997180B1 (ko) * | 2002-04-25 | 2010-11-29 | 아치 스페셜티 케미칼즈, 인코포레이티드 | 에치 잔여물질을 제거하기 위한 비-부식성 세척 조성물 |
| JP3516446B2 (ja) | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
| JP4443864B2 (ja) | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
| WO2004094581A1 (en) | 2003-04-18 | 2004-11-04 | Ekc Technology, Inc. | Aqueous fluoride compositions for cleaning semiconductor devices |
| CN100442449C (zh) | 2003-05-02 | 2008-12-10 | Ekc技术公司 | 半导体工艺中后蚀刻残留物的去除 |
| RU2263998C2 (ru) * | 2003-06-05 | 2005-11-10 | Открытое акционерное общество "НИИ молекулярной электроники и завод "Микрон" | Способ изготовления тонкопленочной структуры межсоединений принтерной головки с тонкопленочным резистором |
| KR101043397B1 (ko) | 2003-07-10 | 2011-06-22 | 주식회사 동진쎄미켐 | 티에프티 엘시디 제조 공정의 칼라 레지스트 제거용박리액 조성물 |
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| JP2005181802A (ja) * | 2003-12-22 | 2005-07-07 | Asahi Kasei Electronics Co Ltd | レジスト剥離液組成物 |
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| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
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| KR100908601B1 (ko) | 2007-06-05 | 2009-07-21 | 제일모직주식회사 | 반사방지 하드마스크 조성물 및 이를 이용한 기판상 재료의패턴화 방법 |
| US7884019B2 (en) | 2007-06-07 | 2011-02-08 | Texas Instruments Incorporated | Poison-free and low ULK damage integration scheme for damascene interconnects |
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| CN101398638A (zh) * | 2007-09-29 | 2009-04-01 | 安集微电子（上海）有限公司 | 一种光刻胶清洗剂 |
| US20090121353A1 (en) * | 2007-11-13 | 2009-05-14 | Ramappa Deepak A | Dual damascene beol integration without dummy fill structures to reduce parasitic capacitance |
| CN101578341A (zh) * | 2008-01-07 | 2009-11-11 | 巴斯夫欧洲公司 | 有机涂膜剥离用组合物及剥离有机涂膜的方法 |
| JP5404772B2 (ja) | 2008-04-28 | 2014-02-05 | ビーエーエスエフ ソシエタス・ヨーロピア | ツイン重合によって得られるＬｏｗ−ｋ誘電体 |
| KR20110021951A (ko) | 2008-05-26 | 2011-03-04 | 바스프 에스이 | 다공성 물질의 제조 방법 및 그 방법으로 제조된 다공성 물질 |
| US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| WO2010127941A1 (en) | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
-
2010
- 2010-04-20 WO PCT/EP2010/055205 patent/WO2010127943A1/en not_active Ceased
- 2010-04-20 JP JP2012508978A patent/JP5836932B2/ja not_active Expired - Fee Related
- 2010-04-20 SG SG10201402081TA patent/SG10201402081TA/en unknown
- 2010-04-20 RU RU2011149552/04A patent/RU2551841C2/ru not_active IP Right Cessation
- 2010-04-20 MY MYPI2011005271A patent/MY158776A/en unknown
- 2010-04-20 EP EP10715225.8A patent/EP2427804B1/en active Active
- 2010-04-20 US US13/319,187 patent/US9146471B2/en active Active
- 2010-04-20 SG SG2011079381A patent/SG175820A1/en unknown
- 2010-04-20 KR KR1020117029143A patent/KR101799602B1/ko active Active
- 2010-04-20 CN CN201080030190.1A patent/CN102804074B/zh active Active
- 2010-05-06 TW TW099114548A patent/TWI492001B/zh active
-
2011
- 2011-10-26 IL IL215954A patent/IL215954A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CN102804074A (zh) | 2012-11-28 |
| IL215954A0 (en) | 2012-01-31 |
| US20120058644A1 (en) | 2012-03-08 |
| RU2011149552A (ru) | 2013-06-20 |
| MY158776A (en) | 2016-11-15 |
| RU2551841C2 (ru) | 2015-05-27 |
| TWI492001B (zh) | 2015-07-11 |
| EP2427804A1 (en) | 2012-03-14 |
| WO2010127943A1 (en) | 2010-11-11 |
| JP2012526295A (ja) | 2012-10-25 |
| TW201044124A (en) | 2010-12-16 |
| IL215954A (en) | 2017-01-31 |
| KR101799602B1 (ko) | 2017-11-20 |
| JP5836932B2 (ja) | 2015-12-24 |
| SG175820A1 (en) | 2011-12-29 |
| CN102804074B (zh) | 2015-03-04 |
| US9146471B2 (en) | 2015-09-29 |
| KR20120024714A (ko) | 2012-03-14 |
| EP2427804B1 (en) | 2019-10-02 |
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