TWI492001B - 光阻剝離組合物及用於製備電子裝置之方法 - Google Patents

光阻剝離組合物及用於製備電子裝置之方法 Download PDF

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Publication number
TWI492001B
TWI492001B TW099114548A TW99114548A TWI492001B TW I492001 B TWI492001 B TW I492001B TW 099114548 A TW099114548 A TW 099114548A TW 99114548 A TW99114548 A TW 99114548A TW I492001 B TWI492001 B TW I492001B
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TW
Taiwan
Prior art keywords
weight
photoresist
composition
layer
mpas
Prior art date
Application number
TW099114548A
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English (en)
Chinese (zh)
Other versions
TW201044124A (en
Inventor
安德利亞 克里普
Original Assignee
巴地斯顏料化工廠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴地斯顏料化工廠 filed Critical 巴地斯顏料化工廠
Publication of TW201044124A publication Critical patent/TW201044124A/zh
Application granted granted Critical
Publication of TWI492001B publication Critical patent/TWI492001B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Paints Or Removers (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW099114548A 2009-05-07 2010-05-06 光阻剝離組合物及用於製備電子裝置之方法 TWI492001B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17617909P 2009-05-07 2009-05-07

Publications (2)

Publication Number Publication Date
TW201044124A TW201044124A (en) 2010-12-16
TWI492001B true TWI492001B (zh) 2015-07-11

Family

ID=42271987

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099114548A TWI492001B (zh) 2009-05-07 2010-05-06 光阻剝離組合物及用於製備電子裝置之方法

Country Status (11)

Country Link
US (1) US9146471B2 (https=)
EP (1) EP2427804B1 (https=)
JP (1) JP5836932B2 (https=)
KR (1) KR101799602B1 (https=)
CN (1) CN102804074B (https=)
IL (1) IL215954A (https=)
MY (1) MY158776A (https=)
RU (1) RU2551841C2 (https=)
SG (2) SG10201402081TA (https=)
TW (1) TWI492001B (https=)
WO (1) WO2010127943A1 (https=)

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US9223221B2 (en) 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
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US9472420B2 (en) 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
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KR102384908B1 (ko) * 2015-11-25 2022-04-08 삼성전자주식회사 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법
KR20180087624A (ko) 2017-01-25 2018-08-02 동우 화인켐 주식회사 레지스트 박리액 조성물
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KR102933956B1 (ko) * 2021-05-03 2026-03-04 삼성전자주식회사 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법
TWI861658B (zh) * 2022-12-30 2024-11-11 達興材料股份有限公司 清潔組合物、清洗方法和半導體製造方法
KR20240140690A (ko) * 2023-03-17 2024-09-24 삼성전자주식회사 박리액 조성물
CN117031895B (zh) * 2023-08-17 2024-10-15 浙江奥首材料科技有限公司 一种芯片光刻胶剥离液、其制备方法及用途

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Also Published As

Publication number Publication date
CN102804074A (zh) 2012-11-28
IL215954A0 (en) 2012-01-31
US20120058644A1 (en) 2012-03-08
RU2011149552A (ru) 2013-06-20
MY158776A (en) 2016-11-15
RU2551841C2 (ru) 2015-05-27
EP2427804A1 (en) 2012-03-14
WO2010127943A1 (en) 2010-11-11
JP2012526295A (ja) 2012-10-25
TW201044124A (en) 2010-12-16
IL215954A (en) 2017-01-31
KR101799602B1 (ko) 2017-11-20
SG10201402081TA (en) 2014-07-30
JP5836932B2 (ja) 2015-12-24
SG175820A1 (en) 2011-12-29
CN102804074B (zh) 2015-03-04
US9146471B2 (en) 2015-09-29
KR20120024714A (ko) 2012-03-14
EP2427804B1 (en) 2019-10-02

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