RU2551841C2 - Композиции для удаления резиста и способы изготовления электрических устройств - Google Patents
Композиции для удаления резиста и способы изготовления электрических устройств Download PDFInfo
- Publication number
- RU2551841C2 RU2551841C2 RU2011149552/04A RU2011149552A RU2551841C2 RU 2551841 C2 RU2551841 C2 RU 2551841C2 RU 2011149552/04 A RU2011149552/04 A RU 2011149552/04A RU 2011149552 A RU2011149552 A RU 2011149552A RU 2551841 C2 RU2551841 C2 RU 2551841C2
- Authority
- RU
- Russia
- Prior art keywords
- resist
- layer
- composition
- total weight
- removal
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
- H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
- H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Detergent Compositions (AREA)
- Paints Or Removers (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17617909P | 2009-05-07 | 2009-05-07 | |
| US61/176,179 | 2009-05-07 | ||
| PCT/EP2010/055205 WO2010127943A1 (en) | 2009-05-07 | 2010-04-20 | Resist stripping compositions and methods for manufacturing electrical devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2011149552A RU2011149552A (ru) | 2013-06-20 |
| RU2551841C2 true RU2551841C2 (ru) | 2015-05-27 |
Family
ID=42271987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2011149552/04A RU2551841C2 (ru) | 2009-05-07 | 2010-04-20 | Композиции для удаления резиста и способы изготовления электрических устройств |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9146471B2 (https=) |
| EP (1) | EP2427804B1 (https=) |
| JP (1) | JP5836932B2 (https=) |
| KR (1) | KR101799602B1 (https=) |
| CN (1) | CN102804074B (https=) |
| IL (1) | IL215954A (https=) |
| MY (1) | MY158776A (https=) |
| RU (1) | RU2551841C2 (https=) |
| SG (2) | SG10201402081TA (https=) |
| TW (1) | TWI492001B (https=) |
| WO (1) | WO2010127943A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2585322C2 (ru) | 2011-03-18 | 2016-05-27 | Басф Се | Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее |
| US9223221B2 (en) | 2012-03-16 | 2015-12-29 | Basf Se | Photoresist stripping and cleaning composition, method of its preparation and its use |
| RU2015104902A (ru) * | 2012-07-16 | 2016-09-10 | Басф Се | Композиция, используемая в изготовлении интегральных схем, оптических устройств, микромашин и механических прецизионных устройств |
| KR101548420B1 (ko) * | 2012-07-24 | 2015-08-28 | 주식회사 엘지화학 | 금속입자층 형성 방법 및 이를 이용하여 제조된 발광소자 |
| JP6165665B2 (ja) | 2013-05-30 | 2017-07-19 | 信越化学工業株式会社 | 基板の洗浄方法 |
| US9472420B2 (en) | 2013-12-20 | 2016-10-18 | Air Products And Chemicals, Inc. | Composition for titanium nitride hard mask and etch residue removal |
| CN104774697A (zh) * | 2015-04-28 | 2015-07-15 | 苏州永创达电子有限公司 | 一种液晶清洗剂 |
| US9976111B2 (en) | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
| KR102384908B1 (ko) * | 2015-11-25 | 2022-04-08 | 삼성전자주식회사 | 자성 패턴 세정 조성물, 자성 패턴 형성 방법 및 자기 메모리 장치의 제조 방법 |
| KR20180087624A (ko) | 2017-01-25 | 2018-08-02 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 |
| US11175587B2 (en) * | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
| US10948826B2 (en) * | 2018-03-07 | 2021-03-16 | Versum Materials Us, Llc | Photoresist stripper |
| KR102735628B1 (ko) | 2018-12-19 | 2024-12-02 | 삼성전자주식회사 | 반도체 패키지의 제조방법 |
| JP7273660B2 (ja) * | 2019-08-30 | 2023-05-15 | キオクシア株式会社 | 半導体製造装置、および半導体装置の製造方法 |
| KR102794011B1 (ko) | 2020-10-30 | 2025-04-15 | 주식회사 이엔에프테크놀로지 | 포토레지스트 제거용 박리액 조성물 |
| KR102933956B1 (ko) * | 2021-05-03 | 2026-03-04 | 삼성전자주식회사 | 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법 |
| TWI861658B (zh) * | 2022-12-30 | 2024-11-11 | 達興材料股份有限公司 | 清潔組合物、清洗方法和半導體製造方法 |
| KR20240140690A (ko) * | 2023-03-17 | 2024-09-24 | 삼성전자주식회사 | 박리액 조성물 |
| CN117031895B (zh) * | 2023-08-17 | 2024-10-15 | 浙江奥首材料科技有限公司 | 一种芯片光刻胶剥离液、其制备方法及用途 |
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| WO2009046637A1 (fr) * | 2007-09-29 | 2009-04-16 | Anji Microelectronics (Shanghai) Co., Ltd | Composition de nettoyage pour éliminer une photorésine |
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| CA2193905A1 (en) | 1996-12-24 | 1998-06-24 | Luc Ouellet | Integrated processing for an etch module |
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| US20030148624A1 (en) | 2002-01-31 | 2003-08-07 | Kazuto Ikemoto | Method for removing resists |
| KR101017738B1 (ko) * | 2002-03-12 | 2011-02-28 | 미츠비시 가스 가가쿠 가부시키가이샤 | 포토레지스트 박리제 조성물 및 세정 조성물 |
| KR100997180B1 (ko) * | 2002-04-25 | 2010-11-29 | 아치 스페셜티 케미칼즈, 인코포레이티드 | 에치 잔여물질을 제거하기 위한 비-부식성 세척 조성물 |
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| JP5404772B2 (ja) | 2008-04-28 | 2014-02-05 | ビーエーエスエフ ソシエタス・ヨーロピア | ツイン重合によって得られるＬｏｗ−ｋ誘電体 |
| KR20110021951A (ko) | 2008-05-26 | 2011-03-04 | 바스프 에스이 | 다공성 물질의 제조 방법 및 그 방법으로 제조된 다공성 물질 |
| US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| WO2010127941A1 (en) | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
-
2010
- 2010-04-20 WO PCT/EP2010/055205 patent/WO2010127943A1/en not_active Ceased
- 2010-04-20 JP JP2012508978A patent/JP5836932B2/ja not_active Expired - Fee Related
- 2010-04-20 SG SG10201402081TA patent/SG10201402081TA/en unknown
- 2010-04-20 RU RU2011149552/04A patent/RU2551841C2/ru not_active IP Right Cessation
- 2010-04-20 MY MYPI2011005271A patent/MY158776A/en unknown
- 2010-04-20 EP EP10715225.8A patent/EP2427804B1/en active Active
- 2010-04-20 US US13/319,187 patent/US9146471B2/en active Active
- 2010-04-20 SG SG2011079381A patent/SG175820A1/en unknown
- 2010-04-20 KR KR1020117029143A patent/KR101799602B1/ko active Active
- 2010-04-20 CN CN201080030190.1A patent/CN102804074B/zh active Active
- 2010-05-06 TW TW099114548A patent/TWI492001B/zh active
-
2011
- 2011-10-26 IL IL215954A patent/IL215954A/en active IP Right Grant
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1834588A1 (ru) * | 1989-12-07 | 1996-07-10 | Научно-исследовательский институт точного машиностроения | Способ формирования рельефа интегральных микросхем |
| RU2145156C1 (ru) * | 1999-02-09 | 2000-01-27 | Нижегородский государственный технический университет | Способ формирования структур в микроэлектронике |
| RU2263998C2 (ru) * | 2003-06-05 | 2005-11-10 | Открытое акционерное общество "НИИ молекулярной электроники и завод "Микрон" | Способ изготовления тонкопленочной структуры межсоединений принтерной головки с тонкопленочным резистором |
| JP2005181802A (ja) * | 2003-12-22 | 2005-07-07 | Asahi Kasei Electronics Co Ltd | レジスト剥離液組成物 |
| WO2009046637A1 (fr) * | 2007-09-29 | 2009-04-16 | Anji Microelectronics (Shanghai) Co., Ltd | Composition de nettoyage pour éliminer une photorésine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102804074A (zh) | 2012-11-28 |
| IL215954A0 (en) | 2012-01-31 |
| US20120058644A1 (en) | 2012-03-08 |
| RU2011149552A (ru) | 2013-06-20 |
| MY158776A (en) | 2016-11-15 |
| TWI492001B (zh) | 2015-07-11 |
| EP2427804A1 (en) | 2012-03-14 |
| WO2010127943A1 (en) | 2010-11-11 |
| JP2012526295A (ja) | 2012-10-25 |
| TW201044124A (en) | 2010-12-16 |
| IL215954A (en) | 2017-01-31 |
| KR101799602B1 (ko) | 2017-11-20 |
| SG10201402081TA (en) | 2014-07-30 |
| JP5836932B2 (ja) | 2015-12-24 |
| SG175820A1 (en) | 2011-12-29 |
| CN102804074B (zh) | 2015-03-04 |
| US9146471B2 (en) | 2015-09-29 |
| KR20120024714A (ko) | 2012-03-14 |
| EP2427804B1 (en) | 2019-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20190421 |