KR101785238B1 - 하전 입자 빔 리소그래피 시스템 및 타겟 위치 결정 장치 - Google Patents

하전 입자 빔 리소그래피 시스템 및 타겟 위치 결정 장치 Download PDF

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Publication number
KR101785238B1
KR101785238B1 KR1020167034638A KR20167034638A KR101785238B1 KR 101785238 B1 KR101785238 B1 KR 101785238B1 KR 1020167034638 A KR1020167034638 A KR 1020167034638A KR 20167034638 A KR20167034638 A KR 20167034638A KR 101785238 B1 KR101785238 B1 KR 101785238B1
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South Korea
Prior art keywords
stage
carrier
carriage
target
charged particle
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English (en)
Korean (ko)
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KR20160145209A (ko
Inventor
제리 페이지스터
귀도 데보어
Original Assignee
마퍼 리쏘그라피 아이피 비.브이.
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Priority claimed from NL2001896A external-priority patent/NL2001896C/en
Application filed by 마퍼 리쏘그라피 아이피 비.브이. filed Critical 마퍼 리쏘그라피 아이피 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Details Of Measuring And Other Instruments (AREA)
KR1020167034638A 2008-08-18 2009-08-18 하전 입자 빔 리소그래피 시스템 및 타겟 위치 결정 장치 Active KR101785238B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8974408P 2008-08-18 2008-08-18
US61/089,744 2008-08-18
NL2001896A NL2001896C (en) 2008-08-18 2008-08-18 Charged particle beam lithography system and target positioning device.
NL2001896 2008-08-18
PCT/NL2009/050499 WO2010021543A1 (en) 2008-08-18 2009-08-18 Charged particle beam lithography system and target positioning device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020117006381A Division KR101690338B1 (ko) 2008-08-18 2009-08-18 하전 입자 빔 리소그래피 시스템 및 타겟 위치 결정 장치

Publications (2)

Publication Number Publication Date
KR20160145209A KR20160145209A (ko) 2016-12-19
KR101785238B1 true KR101785238B1 (ko) 2017-10-12

Family

ID=41054033

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020167034638A Active KR101785238B1 (ko) 2008-08-18 2009-08-18 하전 입자 빔 리소그래피 시스템 및 타겟 위치 결정 장치
KR1020117006381A Active KR101690338B1 (ko) 2008-08-18 2009-08-18 하전 입자 빔 리소그래피 시스템 및 타겟 위치 결정 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020117006381A Active KR101690338B1 (ko) 2008-08-18 2009-08-18 하전 입자 빔 리소그래피 시스템 및 타겟 위치 결정 장치

Country Status (6)

Country Link
EP (2) EP2819146B1 (enExample)
JP (3) JP5628808B2 (enExample)
KR (2) KR101785238B1 (enExample)
CN (2) CN102522300B (enExample)
TW (3) TWI544294B (enExample)
WO (1) WO2010021543A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8796644B2 (en) 2008-08-18 2014-08-05 Mapper Lithography Ip B.V. Charged particle beam lithography system and target positioning device
KR101804610B1 (ko) * 2011-03-30 2017-12-04 마퍼 리쏘그라피 아이피 비.브이. 차분 간섭계 모듈을 구비한 리소그래피 시스템
JP5955964B2 (ja) 2011-09-12 2016-07-20 マッパー・リソグラフィー・アイピー・ビー．ブイ． ターゲット処理ツールのためのガイダンス
CN106569396B (zh) * 2011-09-12 2018-10-19 迈普尔平版印刷Ip有限公司 目标定位装置
WO2014051431A1 (en) 2012-09-27 2014-04-03 Mapper Lithography Ip B.V. Multi-axis differential interferometer
JP6761279B2 (ja) 2016-05-16 2020-09-23 キヤノン株式会社 位置決め装置、リソグラフィー装置および物品製造方法
KR20200085839A (ko) * 2017-11-10 2020-07-15 에이에스엠엘 네델란즈 비.브이. 전자 빔 검사 툴 및 대상물 테이블을 위치시키는 방법
WO2019158448A1 (en) * 2018-02-14 2019-08-22 Asml Netherlands B.V. Substrate positioning device and electron beam inspection tool
JP7391735B2 (ja) * 2019-09-25 2023-12-05 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002025902A (ja) * 1999-12-01 2002-01-25 Asm Lithography Bv リソグラフィ投影装置に用いられる位置決め装置
US20030230729A1 (en) 2000-12-08 2003-12-18 Novak W. Thomas Positioning stage with stationary and movable magnet tracks
JP2005235991A (ja) * 2004-02-19 2005-09-02 Riipuru:Kk 転写装置

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JPH0644093Y2 (ja) * 1986-01-10 1994-11-14 東芝機械株式会社 ステ−ジ駆動装置
JPH0652302B2 (ja) * 1986-12-01 1994-07-06 キヤノン株式会社 直動ステ−ジ
JP2960423B2 (ja) * 1988-11-16 1999-10-06 株式会社日立製作所 試料移動装置及び半導体製造装置
JPH03237709A (ja) * 1990-02-14 1991-10-23 Mitsubishi Electric Corp 電子ビーム露光装置
US5684856A (en) * 1991-09-18 1997-11-04 Canon Kabushiki Kaisha Stage device and pattern transfer system using the same
JP2714502B2 (ja) * 1991-09-18 1998-02-16 キヤノン株式会社 移動ステージ装置
JP2902225B2 (ja) * 1992-09-30 1999-06-07 キヤノン株式会社 位置決め装置
US5806193A (en) * 1995-11-09 1998-09-15 Nikon Corporation Tilt and movement apparatus using flexure and air cylinder
US5830612A (en) * 1996-01-24 1998-11-03 Fujitsu Limited Method of detecting a deficiency in a charged-particle-beam exposure mask
JPH09197653A (ja) * 1996-01-24 1997-07-31 Fujitsu Ltd 荷電粒子ビーム露光に於けるマスクパターン検査方法及び荷電粒子ビーム露光装置
JPH11191585A (ja) * 1997-12-26 1999-07-13 Canon Inc ステージ装置、およびこれを用いた露光装置、ならびにデバイス製造方法
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JP2001126651A (ja) * 1999-10-22 2001-05-11 Hitachi Ltd 電子ビーム描画装置
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JP2005268268A (ja) * 2004-03-16 2005-09-29 Canon Inc 電子ビーム露光装置
US7075093B2 (en) * 2004-05-12 2006-07-11 Gorski Richard M Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
US7012264B2 (en) * 2004-06-04 2006-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7406367B2 (en) * 2004-08-26 2008-07-29 Shimano Inc. Input circuit for bicycle component
JP4520426B2 (ja) * 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法
US7348752B1 (en) * 2006-09-20 2008-03-25 Asml Netherlands B.V. Stage apparatus and lithographic apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002025902A (ja) * 1999-12-01 2002-01-25 Asm Lithography Bv リソグラフィ投影装置に用いられる位置決め装置
US20030230729A1 (en) 2000-12-08 2003-12-18 Novak W. Thomas Positioning stage with stationary and movable magnet tracks
JP2005235991A (ja) * 2004-02-19 2005-09-02 Riipuru:Kk 転写装置

Also Published As

Publication number Publication date
TWI468879B (zh) 2015-01-11
CN102187424A (zh) 2011-09-14
CN102522300B (zh) 2014-10-15
EP2819146A1 (en) 2014-12-31
JP2014238402A (ja) 2014-12-18
TWI544294B (zh) 2016-08-01
JP6117149B2 (ja) 2017-04-19
KR101690338B1 (ko) 2016-12-27
WO2010021543A1 (en) 2010-02-25
KR20160145209A (ko) 2016-12-19
KR20110055678A (ko) 2011-05-25
JP2012500492A (ja) 2012-01-05
JP5628808B2 (ja) 2014-11-19
CN102187424B (zh) 2013-07-17
EP2313908B1 (en) 2014-09-24
JP5539468B2 (ja) 2014-07-02
TW201250411A (en) 2012-12-16
CN102522300A (zh) 2012-06-27
TW201508425A (zh) 2015-03-01
EP2313908A1 (en) 2011-04-27
EP2819146B1 (en) 2017-11-01
JP2013038426A (ja) 2013-02-21
TW201009519A (en) 2010-03-01
TWI472884B (zh) 2015-02-11

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