CN102187424B - 带电粒子束光刻系统以及目标定位装置 - Google Patents

带电粒子束光刻系统以及目标定位装置 Download PDF

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Publication number
CN102187424B
CN102187424B CN2009801412805A CN200980141280A CN102187424B CN 102187424 B CN102187424 B CN 102187424B CN 2009801412805 A CN2009801412805 A CN 2009801412805A CN 200980141280 A CN200980141280 A CN 200980141280A CN 102187424 B CN102187424 B CN 102187424B
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CN
China
Prior art keywords
charged particle
particle beam
actuator
target
bearing part
Prior art date
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Application number
CN2009801412805A
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English (en)
Chinese (zh)
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CN102187424A (zh
Inventor
杰里·佩斯特尔
吉多·德布尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL2001896A external-priority patent/NL2001896C/en
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of CN102187424A publication Critical patent/CN102187424A/zh
Application granted granted Critical
Publication of CN102187424B publication Critical patent/CN102187424B/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Details Of Measuring And Other Instruments (AREA)
CN2009801412805A 2008-08-18 2009-08-18 带电粒子束光刻系统以及目标定位装置 Active CN102187424B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US8974408P 2008-08-18 2008-08-18
NL2001896A NL2001896C (en) 2008-08-18 2008-08-18 Charged particle beam lithography system and target positioning device.
US61/089,744 2008-08-18
NL2001896 2008-08-18
PCT/NL2009/050499 WO2010021543A1 (en) 2008-08-18 2009-08-18 Charged particle beam lithography system and target positioning device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201110460373.3A Division CN102522300B (zh) 2008-08-18 2009-08-18 带电粒子束光刻系统以及目标定位装置

Publications (2)

Publication Number Publication Date
CN102187424A CN102187424A (zh) 2011-09-14
CN102187424B true CN102187424B (zh) 2013-07-17

Family

ID=41054033

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2009801412805A Active CN102187424B (zh) 2008-08-18 2009-08-18 带电粒子束光刻系统以及目标定位装置
CN201110460373.3A Active CN102522300B (zh) 2008-08-18 2009-08-18 带电粒子束光刻系统以及目标定位装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201110460373.3A Active CN102522300B (zh) 2008-08-18 2009-08-18 带电粒子束光刻系统以及目标定位装置

Country Status (6)

Country Link
EP (2) EP2313908B1 (enExample)
JP (3) JP5628808B2 (enExample)
KR (2) KR101785238B1 (enExample)
CN (2) CN102187424B (enExample)
TW (3) TWI472884B (enExample)
WO (1) WO2010021543A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8796644B2 (en) 2008-08-18 2014-08-05 Mapper Lithography Ip B.V. Charged particle beam lithography system and target positioning device
US9261800B2 (en) 2011-03-30 2016-02-16 Mapper Lithography Ip B.V. Alignment of an interferometer module for use in an exposure tool
EP2756354B1 (en) 2011-09-12 2018-12-19 Mapper Lithography IP B.V. Target processing tool
NL1039797C2 (en) * 2011-09-12 2015-02-09 Mapper Lithography Ip Bv Target positioning device, method for driving a target positioning device, and a lithography system comprising such a target positioning device.
JP6181189B2 (ja) 2012-09-27 2017-08-16 マッパー・リソグラフィー・アイピー・ビー．ブイ． 多軸微分干渉計
JP6761279B2 (ja) 2016-05-16 2020-09-23 キヤノン株式会社 位置決め装置、リソグラフィー装置および物品製造方法
JP2021502669A (ja) * 2017-11-10 2021-01-28 エーエスエムエル ネザーランズ ビー．ブイ． 電子ビーム検査ツール、及びオブジェクトテーブルを位置決めする方法
WO2019158448A1 (en) * 2018-02-14 2019-08-22 Asml Netherlands B.V. Substrate positioning device and electron beam inspection tool
JP7391735B2 (ja) * 2019-09-25 2023-12-05 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514858A (en) * 1983-03-15 1985-04-30 Micronix Partners Lithography system
US5073912A (en) * 1988-11-16 1991-12-17 Hitachi, Ltd. Sample moving apparatus, sample moving system and semiconductor manufacturing apparatus
US5684856A (en) * 1991-09-18 1997-11-04 Canon Kabushiki Kaisha Stage device and pattern transfer system using the same
US6137111A (en) * 1996-01-24 2000-10-24 Fujitsu Limited Charged particle-beam exposure device and charged-particle-beam exposure method
EP1383157A2 (en) * 2002-07-18 2004-01-21 Canon Kabushiki Kaisha Electron beam exposure apparatus and semiconductor device manufacturing method
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
US20080067967A1 (en) * 2006-09-20 2008-03-20 Asml Netherlands B.V. Stage apparatus and lithographic apparatus

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JPH0644093Y2 (ja) * 1986-01-10 1994-11-14 東芝機械株式会社 ステ−ジ駆動装置
JPH0652302B2 (ja) * 1986-12-01 1994-07-06 キヤノン株式会社 直動ステ−ジ
JPH03237709A (ja) * 1990-02-14 1991-10-23 Mitsubishi Electric Corp 電子ビーム露光装置
JP2714502B2 (ja) * 1991-09-18 1998-02-16 キヤノン株式会社 移動ステージ装置
JP2902225B2 (ja) * 1992-09-30 1999-06-07 キヤノン株式会社 位置決め装置
US5806193A (en) * 1995-11-09 1998-09-15 Nikon Corporation Tilt and movement apparatus using flexure and air cylinder
JPH09197653A (ja) * 1996-01-24 1997-07-31 Fujitsu Ltd 荷電粒子ビーム露光に於けるマスクパターン検査方法及び荷電粒子ビーム露光装置
JPH11191585A (ja) * 1997-12-26 1999-07-13 Canon Inc ステージ装置、およびこれを用いた露光装置、ならびにデバイス製造方法
US6559456B1 (en) * 1998-10-23 2003-05-06 Canon Kabushiki Kaisha Charged particle beam exposure method and apparatus
JP4209983B2 (ja) * 1999-01-21 2009-01-14 住友重機械工業株式会社 ステージ機構
JP2001126651A (ja) * 1999-10-22 2001-05-11 Hitachi Ltd 電子ビーム描画装置
DE60032568T2 (de) * 1999-12-01 2007-10-04 Asml Netherlands B.V. Positionierungsapparat und damit versehener lithographischer Apparat
EP1107067B1 (en) * 1999-12-01 2006-12-27 ASML Netherlands B.V. Positioning apparatus and lithographic apparatus comprising the same
JP2001344833A (ja) * 2000-06-01 2001-12-14 Fujitsu Ltd 電子ビーム描画装置
US20030230729A1 (en) 2000-12-08 2003-12-18 Novak W. Thomas Positioning stage with stationary and movable magnet tracks
KR101077098B1 (ko) * 2002-10-30 2011-10-26 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
JP3842203B2 (ja) * 2002-11-07 2006-11-08 株式会社荏原製作所 基板処理装置
JP2004327121A (ja) * 2003-04-22 2004-11-18 Ebara Corp 写像投影方式電子線装置
JP4426276B2 (ja) * 2003-10-06 2010-03-03 住友重機械工業株式会社 搬送装置、塗布システム、及び検査システム
JP2005235991A (ja) * 2004-02-19 2005-09-02 Riipuru:Kk 転写装置
JP2005268268A (ja) * 2004-03-16 2005-09-29 Canon Inc 電子ビーム露光装置
US7075093B2 (en) * 2004-05-12 2006-07-11 Gorski Richard M Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
US7012264B2 (en) * 2004-06-04 2006-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7406367B2 (en) * 2004-08-26 2008-07-29 Shimano Inc. Input circuit for bicycle component
JP4520426B2 (ja) * 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514858A (en) * 1983-03-15 1985-04-30 Micronix Partners Lithography system
US5073912A (en) * 1988-11-16 1991-12-17 Hitachi, Ltd. Sample moving apparatus, sample moving system and semiconductor manufacturing apparatus
US5684856A (en) * 1991-09-18 1997-11-04 Canon Kabushiki Kaisha Stage device and pattern transfer system using the same
US6137111A (en) * 1996-01-24 2000-10-24 Fujitsu Limited Charged particle-beam exposure device and charged-particle-beam exposure method
EP1383157A2 (en) * 2002-07-18 2004-01-21 Canon Kabushiki Kaisha Electron beam exposure apparatus and semiconductor device manufacturing method
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
US20080067967A1 (en) * 2006-09-20 2008-03-20 Asml Netherlands B.V. Stage apparatus and lithographic apparatus

Also Published As

Publication number Publication date
CN102522300A (zh) 2012-06-27
JP2012500492A (ja) 2012-01-05
EP2313908B1 (en) 2014-09-24
JP5539468B2 (ja) 2014-07-02
TW201508425A (zh) 2015-03-01
JP5628808B2 (ja) 2014-11-19
TWI544294B (zh) 2016-08-01
KR101690338B1 (ko) 2016-12-27
EP2313908A1 (en) 2011-04-27
JP2014238402A (ja) 2014-12-18
TWI472884B (zh) 2015-02-11
KR101785238B1 (ko) 2017-10-12
TW201009519A (en) 2010-03-01
JP6117149B2 (ja) 2017-04-19
JP2013038426A (ja) 2013-02-21
TW201250411A (en) 2012-12-16
CN102187424A (zh) 2011-09-14
EP2819146A1 (en) 2014-12-31
KR20110055678A (ko) 2011-05-25
WO2010021543A1 (en) 2010-02-25
KR20160145209A (ko) 2016-12-19
CN102522300B (zh) 2014-10-15
TWI468879B (zh) 2015-01-11
EP2819146B1 (en) 2017-11-01

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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20190429

Address after: Holland Weide Eindhoven

Patentee after: ASML Holland Co., Ltd.

Address before: Delft

Patentee before: Mapper Lithography IP B. V.

TR01 Transfer of patent right