KR101781161B1 - Test Socket - Google Patents

Test Socket Download PDF

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Publication number
KR101781161B1
KR101781161B1 KR1020150162569A KR20150162569A KR101781161B1 KR 101781161 B1 KR101781161 B1 KR 101781161B1 KR 1020150162569 A KR1020150162569 A KR 1020150162569A KR 20150162569 A KR20150162569 A KR 20150162569A KR 101781161 B1 KR101781161 B1 KR 101781161B1
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KR
South Korea
Prior art keywords
conductive
contact
center
diameter
hole
Prior art date
Application number
KR1020150162569A
Other languages
Korean (ko)
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KR20170058677A (en
Inventor
인치훈
김찬수
Original Assignee
(주)티에스이
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Priority to KR1020150162569A priority Critical patent/KR101781161B1/en
Publication of KR20170058677A publication Critical patent/KR20170058677A/en
Application granted granted Critical
Publication of KR101781161B1 publication Critical patent/KR101781161B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0416—Connectors, terminals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0441—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0441—Details
    • G01R1/0466—Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The present invention provides a test socket that can maintain a gap between through holes of an insulating portion when contacting a semiconductor device for testing, thereby preventing breakage of the partition of the insulating portion.
To achieve this object, the present invention provides a semiconductor device comprising: an insulating part made of silicone rubber and having a plurality of through holes and partition walls formed between the through holes; a conductive part formed of a plurality of conductive particles and silicone rubber, And a spacing retaining portion formed on the insulating portion and the conductive portion to increase the elasticity of the insulating portion to maintain a gap between the barrier portions when the terminal of the semiconductor element contacts the conductive portion. Socket.

Description

Test Socket {Test Socket}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a test socket, and more particularly, to a test socket that electrically connects a test lead to a ball lead of a semiconductor device under test.

When the manufacturing process of the semiconductor device is finished, a test for the semiconductor device is required. When testing a semiconductor device, a test socket for electrically connecting the test equipment and the semiconductor device is required. The test socket is a mediator component that allows the signal from the tester to pass through the test board to the semiconductor device to be inspected during the test process. The test socket requires a stable electrical contact capability so that the discrete semiconductor device moves to the correct position and has the mechanical contact ability to make accurate contact with the test board and the signal distortion at the contact point at the time of signal transmission to be minimized.

Among them, the inspection socket formed of silicone rubber is characterized in that it can attain dense electrical connection without using any means such as soldering or mechanical coupling, and is characterized in that flexible connection is possible by absorbing mechanical shock or deformation It is widely used as a socket for inspection of semiconductor test equipment.

FIG. 1 is a schematic view of a socket for inspection according to the related art, and FIG. 2 is a view schematically showing a state in which a terminal and a conductive part of the semiconductor device are in contact with each other according to the related art.

1, the inspecting socket 10 according to the related art has a function of insulating layer between the conductive portion 11 and the conductive portion 11 which is in contact with the terminal 16a of the semiconductor element 16 An insulating portion 13, and a supporting plate P for supporting the insulating portion 13. [ A plurality of through holes 13a are formed in the insulating portion 13 so as to penetrate the conductive portions 11. A partition 13b is formed between the through holes 13a to form through holes 13a, (13a).

The upper and lower ends of the conductive part 11 of the inspection socket 10 are in contact with the terminals 16a of the semiconductor element 16 and the conductive pads 15a of the test board 15 connected to the test equipment, Thereby electrically connecting the conductive pad 16a and the conductive pad 15a.

On the other hand, the development of the technology requires a high-frequency, high-current, high-temperature semiconductor element 16, and the socket for inspection 10, which is in contact with the semiconductor element 16, .

However, in the conventional test socket 10, when the semiconductor element 16 is tested, the terminal 16a of the semiconductor element 16 is brought into contact with the conductive portion 11 to press the conductive portion 11, A deformation occurs as shown in FIG.

The conductive portion 11 is expanded in the horizontal direction and the partition 13b of the insulating portion 13 supporting the conductive portion 11 is recessed to form the thickness of the partition 13b Is decreased. As a result, the restoring force of the insulating portion 13 is lowered and the thickness of the partition wall 13b continues to decrease. As a result, the partition wall 13b is broken and the insulation resistance is destroyed.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a semiconductor device which can maintain a gap between through- And a socket for inspecting the socket.

In order to achieve the same object as the present invention, the present invention provides an insulator comprising an insulating portion made of silicone rubber and having a plurality of through holes and partition walls formed between the through holes, a plurality of conductive particles and silicone rubber And spacing retaining portions formed on the insulating portions and the conductive portions to increase the elasticity of the insulating portions and to maintain a gap between the barrier portions when the terminals of the semiconductor elements are in contact with the conductive portions And a socket for inspection.

The conductive part may include a body part forming an external appearance, a first contact part provided on one side of the body part and contacting a terminal of a semiconductor device to be tested, and a second contact part provided on the other side of the body part, And a control unit.

The upper end of the insulating portion may further include a guide plate having a guide hole for guiding a contact position between the terminal and the first contact portion and for preventing the conductive particles from falling out and sinking to the outside.

The gap maintaining portion may include an inclined protrusion formed on the insulating portion and protruding from an upper end and a lower end of the partition so as to be inclined toward the center of the through hole and a protrusion formed from the first contact portion and the second contact portion of the conductive portion to correspond to the inclined protrusion And an inclined concave portion recessed to be inclined toward the center of the body portion.

The space maintaining portion includes a stepped protrusion formed on the insulating portion and protruding from the center of the partition toward the center of the through hole and a stepped recess formed in the center of the body portion to correspond to the protrusion .

The through hole may be formed in any one of a circular shape and a polygonal shape, and may be formed by any one of a punching process and a laser process.

The test socket according to the present invention is capable of maintaining the spacing of the through holes of the insulating portion when the semiconductor device is tested by increasing the elasticity by providing spacing portions on the insulating portion, Can be prevented.

As a result, it is possible to improve the restoring force of the insulating partition wall, to prevent the breakdown phenomenon, and to prolong the service life of the inspection socket.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a test socket according to the prior art; Fig.
2 is a view schematically showing a state in which a terminal and a conductive portion of the semiconductor element contact with each other according to the related art.
3 is a schematic view of a test socket according to the present invention.
4 is a schematic view showing a state in which a terminal and a conductive portion of the semiconductor element according to the present invention are in contact with each other.
FIG. 5 is a schematic view illustrating the structure and operation of the gap maintaining unit according to the first embodiment of the present invention. FIG.
6 is a view schematically showing the structure of a gap holding portion according to a second embodiment of the present invention.
7 is a view schematically showing the structure of a gap holding portion according to a third embodiment of the present invention.
8 is a view schematically showing the shape of a through hole according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the same components are denoted by the same reference symbols as possible in the accompanying drawings. Further, the detailed description of known functions and configurations that may obscure the gist of the present invention will be omitted.

Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 3 to 8 attached hereto.

4 is a schematic view showing a state in which a terminal and a conductive portion of a semiconductor device according to the present invention are in contact with each other, and FIG. 5 is a cross- 1 is a schematic view illustrating a structure and operation of a gap maintaining unit according to an embodiment of the present invention.

FIG. 6 is a view schematically showing the structure of the gap holding part according to the second embodiment of the present invention, FIG. 7 is a view schematically showing the structure of the gap holding part according to the third embodiment of the present invention, Fig. 3 is a schematic view showing the shape of a through hole according to the invention. Fig.

3 and 4, the inspection socket 100 according to the present invention may include an insulating portion 130, a conductive portion 110, and a gap holding portion 140. At this time, the insulation part 130 may be supported by the support plate P and aligned with the inspection circuit board (not shown).

The insulating part 130 is formed of silicone rubber to form the body of the inspection socket 100 and supports each conductive part 110 to be described later upon receiving a contact load.

More specifically, the insulating portion 130 formed of silicone rubber serves to protect the terminals 161 and the conductive portion 110 by absorbing the contact force when the terminal 161 or the conductive pad 151 is contacted.

The silicone rubber used for the insulation portion 130 may be a rubber such as a polybutadiene, a natural rubber, a polyisoprene, a SBR, an NBR and the like, a diene rubber such as a hydrogen compound thereof, a styrene butadiene block, a copolymer, a styrene isoprene block copolymer, Either a block copolymer such as a hydrogen compound thereof, and chloroprene, urethane rubber, polyethylene rubber, epichlorohydrin rubber, ethylene-propylene copolymer, or ethylene propylene diene copolymer may be used.

The conductive part 110 is formed by fusing a plurality of conductive particles 110a and a silicone rubber and is installed to penetrate the insulating part 130. [ A plurality of through holes 132 are formed in the insulating portion 130 so that the conductive portions 110 are penetrated through the through holes 132 and a partition 133 is formed between the through holes 132.

The conductive particles 110a may be formed of a single conductive metal material such as iron, copper, zinc, chromium, nickel, silver, cobalt, aluminum or the like or a conductive metal alloy material composed of two or more metals of these metal elements, In the embodiment of the present invention, a nickel-cobalt (NiCO) alloy is proposed in consideration of economical aspects and conductivity.

Also, the conductive particles 110a according to the present invention are improved in strength and durability through rhodium (RH) plating. On the other hand, a method of plating the conductive particles 110a with rhodium is not particularly limited, but can be plated by, for example, chemical plating or electrolytic plating.

Although eight conductive parts 110 according to the present invention are provided in the insulating part 130, at least one or more conductive parts 110 may be formed to suit the size of the semiconductor test device, but the present invention is not limited thereto.

The conductive part 110 includes a body part 111 forming an external appearance, a first contact part 112 provided on one side of the body part 111 and contacting the terminal 161 of the semiconductor device 160, And a second contact portion 113 provided on the other side of the test board 150 and in contact with the conductive pad 151 of the test board 150. That is, the first contact portion 112 serves to make contact with the terminal 161, the second contact portion 113 serves to contact the conductive pad 151, and the body portion 111 serves to contact the first contact portion 112 and the second contact portion 113. [

The insulator 130 may further include a guide plate 170 having a guide hole 171 formed therein.

The guide plate 170 has a first contact portion 112 inserted into a guide hole 171 formed in a guide plate 170 and a terminal 161 of the semiconductor device 160 to be tested and a first contact portion 112, And serves to prevent the conductive particles 120 of the first contact portion 112 from falling out or being depressed due to the impact of the terminal 161 when they are in contact with each other.

The gap holding part 140 according to the present invention is formed on the insulating part 130 and the conductive part 110. When the terminal 161 of the semiconductor element 160 and the conductive part 110 are brought into contact with each other, 133). The structure of the partitions formed in the insulating part 130 and the structure of the conductive parts are formed in consideration of the phenomenon that the conductive parts 110 are expanded in the horizontal direction when the terminals 161 of the semiconductor device 160 are in contact with the conductive parts 110 It is a change.

2, when the semiconductor element 160 and the terminal 161 are in contact with each other, the central portion of the conductive portion 110 is deformed to a large extent, Is formed at the central portion.

5, the gap retaining portion 140 according to the first embodiment of the present invention includes the inclined protrusion 141 and the inclined recess 142. As shown in FIG.

The inclined protrusion 141 is formed on the insulating portion 130 and protrudes from the upper end and the lower end of the partition 133 so as to be inclined toward the center of the through hole 132. The inclined recess 142 is inclined The first contact portion 112 and the second contact portion 113 of the conductive portion 110 are recessed so as to be inclined toward the center of the body portion 111 so as to correspond to the protrusion 141. [

That is, as shown in FIG. 5A, the gap holding part 140 according to the first embodiment of the present invention includes the inclined protrusion 141 and the inclined recess 142 corresponding to the inclined protrusion 141 The upper end portion diameter D1 and the lower end portion diameter D2 of the through hole 132 are larger than the center diameter D3.

5B, when the semiconductor element 160 is tested, the terminal 161 of the semiconductor element 160 contacts the first contact portion 112 of the conductive portion 110, so that the body portion 111 The inclined concave portion 142 of the body portion 111 expands and the inclined concave portion 142 presses the inclined protrusion 141 formed on the partition wall 133 to press the inclined protrusion 141, .

As a result, the inclined projections 141 and the inclined recesses, which are the spacing members 140, serve to increase the resilience of the insulating member 130, so that during the test of the semiconductor device 160, 130 and the conductive portion 110 are deformed by the structure of the pre-test state of the prior art and the interval between the through hole 132 and the through hole 132 can be maintained, so that the thickness of the partition wall 133 can be secured do.

The diameter D3 of the through hole 132 according to the first embodiment of the present invention is formed to be 0.5 to 0.9 times smaller than the diameter D1 of the upper end portion and the diameter D2 of the lower end portion. When the diameter D3 of the center portion D3 of the through hole 132 is less than 0.5 times the diameter D1 of the upper end portion and the diameter D2 of the lower end portion, the central region of the conductive portion 110 is excessively reduced, The diameter of the gap holding portion 140 is too small to form a proper ratio of the diameter of the holding portion 140. Therefore, .

6, the gap holding portion 140 according to the second embodiment of the present invention includes a stepped protrusion 143 and a stepped recess 144. [

The stepped protrusion part is formed in the insulating part 130 and protrudes from the center of the partition wall 133 toward the center of the through hole 132. The stepped recessed part 144 protrudes from the body part 111).

That is, the gap holding part 140 according to the second embodiment of the present invention includes the stepped protrusion 143 and the stepped recess 144 corresponding to the stepped protrusion 143, And the upper end diameter D1 and the lower end diameter D2 of the lower end portion are formed larger than the central portion diameter D3.

When the terminal 161 of the semiconductor element 160 contacts the first contact portion 112 of the conductive portion 110 and is pressed against the body portion 111 during the test of the semiconductor element 160, The stepped recess 144 is expanded and the stepped protrusion 143 is compressed by compressing the stepped protrusion 143 formed on the partition 133 and the stepped protrusion 143 is contracted.

As a result, the step-like protrusion 143 and the step-like recess 144, which are the interval holding parts 140, serve to increase the elasticity of the insulating part 130, The insulating portion 130 and the conductive portion 110 may be deformed by the structure of the state before testing according to the prior art so that a gap can be maintained between the through hole 132 and the through hole 132 to secure the thickness of the partition wall 133 .

The diameter D3 of the through hole 132 according to the second embodiment of the present invention is formed to be 0.5 to 0.9 times smaller than the diameter D1 of the upper end portion and the diameter D2 of the lower end portion. When the diameter D3 of the center portion D3 of the through hole 132 is less than 0.5 times the diameter D1 of the upper end portion and the diameter D2 of the lower end portion, the central region of the conductive portion 110 is excessively reduced, The diameter of the gap holding portion 140 is too small to form a proper ratio of the diameter of the holding portion 140. Therefore, .

Also, as shown in FIG. 7, the spacer 140 according to the third embodiment of the present invention may be formed in a structure in which the first embodiment and the second embodiment are combined. Also, although not shown, the barrier ribs 133 may have a convexly rounded structure.

8, the through hole 132 may be formed in a circular or polygonal shape, and the through hole 132 may be formed through any one of a punching process and a laser process. have. Of course, the through hole 132 may be integrally formed in the mold process for manufacturing the insulation part 130. [

3 to 4, the operation of the inspection socket 100 according to the present invention will be described below.

First, a test board 150 provided with a test socket 100 is prepared. At this time, the second contact portion 113 of the conductive portion 110 contacts the conductive pad 151 of the test board 150 and is electrically connected. The terminal 161 of the semiconductor element 160 transferred to the upper portion of the inspection socket 100 is electrically connected by being elastically contacted by pressing the first contact portion 112 of the conductive portion 110 at a predetermined pressure .

In this state, a test signal is transmitted to the semiconductor device 160 via the test socket 100 through the test board 150, and a test process is performed.

The terminal 161 of the semiconductor element 160 is pressed against the first contact portion 112 of the conductive portion 110 at a predetermined pressure because the test socket 100 including the conductive portion 110 has elasticity, And the first contact portion 112 of the conductive portion 110 is pushed by the terminal 161 to realize the electrical contact with the outer peripheral surface of the terminal 161 wrapped around.

At this time, when the terminal 161 of the semiconductor element 160 comes into contact with the first contact portion 112 of the conductive portion 110 and the body portion 111 is pressed, the inclined concave portion 142 of the body portion 111, And the inclined concave portion 142 compresses the inclined protrusion 141 formed on the partition 133 to reduce the inclined protrusion 141. As a result,

The insulating portion 130 and the conductive portion 110 are deformed to the structure of the state before testing according to the prior art during the test of the semiconductor element 160 by the gap holding portion 140, And the through-holes 132, so that the thickness of the partition 133 can be ensured.

As a result, the thickness of the partition wall of the insulation portion can be ensured, breakage of the insulation portion can be prevented, and insulation breakdown due to the breakage can be prevented.

Although the present invention has been described by way of examples, the present invention is not limited thereto, and modifications and variations are possible within the scope of the technical idea of the present invention.

100: Test socket 110: Conductive part
111: body portion 112: first contact portion
113: second contact portion 130: insulating portion
132: through hole 133: partition wall
140: space maintaining portion 141: inclined protrusion
142: an inclined concave portion 143: a stepped protrusion
144: stepped recess 150: test board
151: conductive pad 160: semiconductor element
161: terminal 170: guide plate
171: Guide hole

Claims (8)

An insulating part 130 made of a silicone rubber 131 and having a plurality of through holes 132 and partition walls 133 formed between the through holes 132;
A conductive part 110 provided in each of the through holes 132 of the insulation part 130 and made of a plurality of conductive particles and a silicone rubber 131; And
When the terminal 161 of the semiconductor device 160 and the conductive part 110 are brought into contact with each other by increasing the resilience of the insulating part 130 formed on the insulating part 130 and the conductive part 110, (140) provided so as to maintain a gap between the first holding member (133) and the second holding member (133)
The center of the conductive part 110 is concave and the central part of both sides of the partition wall protrudes so that the upper end of the conductive part 110 is connected to the terminal 161 The central portion of the conductive portion 110 is expanded toward the center of each partition wall 133 and the center portion of each partition wall 133 is reduced by the central portion of the expanded conductive portion 110, And the spacing between the respective partition walls (133) is maintained. The method according to claim 1,
The conductive part 110
A body portion 111 forming an outer appearance;
A first contact portion 112 provided on one side of the body portion 111 and in contact with a terminal 161 of the semiconductor device 160 to be tested; And,
And a second contact part (113) provided on the other side of the body part (111) and contacting the conductive pad (151) of the test board (150). 3. The method of claim 2,
At the upper end of the insulation part 130
A guide plate 170 provided with a guide hole 171 is provided to guide the contact position between the terminal 161 and the first contact portion 112 and to prevent the conductive particles from falling out and sinking to the outside Features a test socket. The method according to claim 2 or 3,
The gap maintaining unit 140
An inclined projection 141 formed on the insulating part 130 and protruding from the upper and lower ends of the partition 133 to be inclined toward the center of the through hole 132; And
The inclined recess 142 is formed to be inclined toward the center of the body portion 111 from the first contact portion 112 and the second contact portion 113 of the conductive portion 110 so as to correspond to the inclined protrusion 141 ) Of the socket (1). 5. The method of claim 4,
The through hole (132)
Wherein the diameter D3 of the central portion is formed to be 0.5 to 0.9 times smaller than the diameter D1 of the upper end portion and the diameter D2 of the lower end portion. The method according to claim 2 or 3,
The gap maintaining unit 140
A stepped protrusion 143 formed on the insulating part 130 and protruding from the center of the partition 133 toward the center of the through hole 132; And
And a stepped recess (144) recessed in the center of the body part (111) so as to correspond to the stepped protrusion (143). The method according to claim 6,
The through hole (132)
Wherein the diameter D3 of the central portion is formed to be 0.5 to 0.9 times smaller than the diameter D1 of the upper end portion and the diameter D2 of the lower end portion. The method according to claim 1,
Wherein the through hole (132) is formed in one of a circular shape and a polygonal shape, and is formed through any one of a punching process and a laser process.
KR1020150162569A 2015-11-19 2015-11-19 Test Socket KR101781161B1 (en)

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KR101781161B1 true KR101781161B1 (en) 2017-10-23

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100952843B1 (en) * 2008-06-04 2010-04-15 이용준 Semiconductor device test contactor and manufacturing method thereof
JP2011204401A (en) 2010-03-24 2011-10-13 Oki Semiconductor Co Ltd Inspection socket and semiconductor inspection device
KR101353481B1 (en) * 2013-02-28 2014-01-20 주식회사 아이에스시 Test socket with high density conduction section
KR101522624B1 (en) 2013-12-12 2015-05-22 주식회사 아이에스시 Electrical test socket

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100952843B1 (en) * 2008-06-04 2010-04-15 이용준 Semiconductor device test contactor and manufacturing method thereof
JP2011204401A (en) 2010-03-24 2011-10-13 Oki Semiconductor Co Ltd Inspection socket and semiconductor inspection device
KR101353481B1 (en) * 2013-02-28 2014-01-20 주식회사 아이에스시 Test socket with high density conduction section
KR101522624B1 (en) 2013-12-12 2015-05-22 주식회사 아이에스시 Electrical test socket

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190036004A (en) * 2017-09-26 2019-04-04 주식회사 이노글로벌 Bi-directional electrically conductive module
KR102007263B1 (en) 2017-09-26 2019-08-07 주식회사 이노글로벌 Bi-directional electrically conductive module
KR102359547B1 (en) * 2020-09-25 2022-02-08 (주)티에스이 Test socket and test apparatus having the same

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