KR101667073B1 - 바리스터 세라믹, 바리스터 세라믹을 포함하는 다층 소자, 바리스터 세라믹의 제조 방법 - Google Patents

바리스터 세라믹, 바리스터 세라믹을 포함하는 다층 소자, 바리스터 세라믹의 제조 방법 Download PDF

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KR101667073B1
KR101667073B1 KR1020117020443A KR20117020443A KR101667073B1 KR 101667073 B1 KR101667073 B1 KR 101667073B1 KR 1020117020443 A KR1020117020443 A KR 1020117020443A KR 20117020443 A KR20117020443 A KR 20117020443A KR 101667073 B1 KR101667073 B1 KR 101667073B1
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varistor
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varistor ceramic
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ceramics
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KR20110122712A (ko
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모니카 피버
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에프코스 아게
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105Varistor cores
    • H01C7/108Metal oxide
    • H01C7/112ZnO type
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C04B35/50Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
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    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H01C17/06546Oxides of zinc or cadmium
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    • H01ELECTRIC ELEMENTS
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    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1006Thick film varistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
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    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102Varistor boundary, e.g. surface layers
    • HELECTRICITY
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    • H01C7/18Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
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    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208Calcium oxide or oxide-forming salts thereof, e.g. lime
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  • Engineering & Computer Science (AREA)
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  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thermistors And Varistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
KR1020117020443A 2009-02-03 2010-02-01 바리스터 세라믹, 바리스터 세라믹을 포함하는 다층 소자, 바리스터 세라믹의 제조 방법 Active KR101667073B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009007234.9 2009-02-03
DE102009007234 2009-02-03
DE102009023846.8 2009-06-04
DE102009023846.8A DE102009023846B4 (de) 2009-02-03 2009-06-04 Varistorkeramik, Vielschichtbauelement umfassend die Varistorkeramik, Herstellungsverfahren für die Varistorkeramik
PCT/EP2010/051188 WO2010089279A2 (de) 2009-02-03 2010-02-01 Varistorkeramik, vielschichtbauelement umfassend die varistorkeramik, herstellungsverfahren für die varistorkeramik

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KR20110122712A KR20110122712A (ko) 2011-11-10
KR101667073B1 true KR101667073B1 (ko) 2016-10-17

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US (1) US8487735B2 (enExample)
EP (1) EP2393761B1 (enExample)
JP (1) JP5833929B2 (enExample)
KR (1) KR101667073B1 (enExample)
CN (2) CN102300832A (enExample)
DE (1) DE102009023846B4 (enExample)
TW (1) TWI482180B (enExample)
WO (1) WO2010089279A2 (enExample)

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JP6561839B2 (ja) * 2013-11-13 2019-08-21 日本ケミコン株式会社 電子部品およびその製造方法
TWI685003B (zh) * 2018-07-25 2020-02-11 勝德國際研發股份有限公司 壓敏電阻模組
TWI810594B (zh) * 2021-06-28 2023-08-01 佳邦科技股份有限公司 多層式壓敏電阻及其製作方法
CN115579200A (zh) * 2021-07-05 2023-01-06 佳邦科技股份有限公司 多层式压敏电阻及其制作方法

Citations (1)

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JP2005022900A (ja) * 2003-06-30 2005-01-27 Tdk Corp 電圧非直線性抵抗体磁器組成物、電子部品及び積層チップバリスタ

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JPS60107802A (ja) * 1983-11-16 1985-06-13 株式会社富士電機総合研究所 電圧非直線抵抗素子
DE69317407T2 (de) 1992-10-09 1998-08-06 Tdk Corp Widerstandselement mit nichtlinearer spannungsabhängigkeit und herstellungsverfahren
JPH07320908A (ja) * 1994-05-19 1995-12-08 Tdk Corp 酸化亜鉛系バリスタの製造方法および酸化亜鉛系バリスタ
CN1046172C (zh) * 1996-12-31 1999-11-03 中国科学院等离子体物理研究所 氧化锌陶瓷线性电阻器的制造方法
JP2904178B2 (ja) * 1997-03-21 1999-06-14 三菱電機株式会社 電圧非直線抵抗体及び避雷器
JP3822798B2 (ja) * 2001-02-16 2006-09-20 太陽誘電株式会社 電圧非直線抵抗体及び磁器組成物
CN100394517C (zh) * 2004-07-10 2008-06-11 华中科技大学 ZnO陶瓷薄膜低压压敏电阻的制备方法
CN100382205C (zh) * 2005-04-26 2008-04-16 华东师范大学 高电位梯度氧化锌压敏电阻材料的制备和应用
KR100821274B1 (ko) * 2006-07-19 2008-04-10 조인셋 주식회사 칩 세라믹 전자부품
JP4888260B2 (ja) 2007-07-10 2012-02-29 Tdk株式会社 電圧非直線性抵抗体磁器組成物、電子部品、及び積層チップバリスタ
JP5088029B2 (ja) * 2007-07-19 2012-12-05 Tdk株式会社 バリスタ

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Publication number Priority date Publication date Assignee Title
JP2005022900A (ja) * 2003-06-30 2005-01-27 Tdk Corp 電圧非直線性抵抗体磁器組成物、電子部品及び積層チップバリスタ

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TW201036003A (en) 2010-10-01
DE102009023846B4 (de) 2024-02-01
US20110319255A1 (en) 2011-12-29
JP2012516825A (ja) 2012-07-26
EP2393761A2 (de) 2011-12-14
TWI482180B (zh) 2015-04-21
EP2393761B1 (de) 2017-04-05
DE102009023846A1 (de) 2010-08-05
CN105622088A (zh) 2016-06-01
WO2010089279A2 (de) 2010-08-12
JP5833929B2 (ja) 2015-12-16
CN102300832A (zh) 2011-12-28
KR20110122712A (ko) 2011-11-10
WO2010089279A3 (de) 2010-10-14
US8487735B2 (en) 2013-07-16

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