TWI482180B - 變阻器陶瓷、包括變阻器陶瓷之多層元件及變阻器陶瓷之製造方法 - Google Patents
變阻器陶瓷、包括變阻器陶瓷之多層元件及變阻器陶瓷之製造方法 Download PDFInfo
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- TWI482180B TWI482180B TW099102532A TW99102532A TWI482180B TW I482180 B TWI482180 B TW I482180B TW 099102532 A TW099102532 A TW 099102532A TW 99102532 A TW99102532 A TW 99102532A TW I482180 B TWI482180 B TW I482180B
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- varistor
- varistor ceramic
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- 239000000919 ceramic Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011575 calcium Substances 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 10
- 239000011888 foil Substances 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910010293 ceramic material Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001354 calcination Methods 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 2
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 238000005238 degreasing Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 7
- 238000000227 grinding Methods 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005261 decarburization Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000288 alkali metal carbonate Inorganic materials 0.000 description 1
- 150000008041 alkali metal carbonates Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 229910003447 praseodymium oxide Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
- H01C17/06546—Oxides of zinc or cadmium
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- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1006—Thick film varistors
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- H01C7/102—Varistor boundary, e.g. surface layers
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- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
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- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
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- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
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- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3409—Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
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- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009007234 | 2009-02-03 | ||
| DE102009023846.8A DE102009023846B4 (de) | 2009-02-03 | 2009-06-04 | Varistorkeramik, Vielschichtbauelement umfassend die Varistorkeramik, Herstellungsverfahren für die Varistorkeramik |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201036003A TW201036003A (en) | 2010-10-01 |
| TWI482180B true TWI482180B (zh) | 2015-04-21 |
Family
ID=42309040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099102532A TWI482180B (zh) | 2009-02-03 | 2010-01-29 | 變阻器陶瓷、包括變阻器陶瓷之多層元件及變阻器陶瓷之製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8487735B2 (enExample) |
| EP (1) | EP2393761B1 (enExample) |
| JP (1) | JP5833929B2 (enExample) |
| KR (1) | KR101667073B1 (enExample) |
| CN (2) | CN102300832A (enExample) |
| DE (1) | DE102009023846B4 (enExample) |
| TW (1) | TWI482180B (enExample) |
| WO (1) | WO2010089279A2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6561839B2 (ja) * | 2013-11-13 | 2019-08-21 | 日本ケミコン株式会社 | 電子部品およびその製造方法 |
| TWI685003B (zh) * | 2018-07-25 | 2020-02-11 | 勝德國際研發股份有限公司 | 壓敏電阻模組 |
| TWI810594B (zh) * | 2021-06-28 | 2023-08-01 | 佳邦科技股份有限公司 | 多層式壓敏電阻及其製作方法 |
| CN115579200A (zh) * | 2021-07-05 | 2023-01-06 | 佳邦科技股份有限公司 | 多层式压敏电阻及其制作方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100785A (en) * | 1997-03-21 | 2000-08-08 | Mitsubishi Denki Kabushiki Kaisha | Voltage nonlinear resistor and lightning arrester |
| US20090015367A1 (en) * | 2007-07-10 | 2009-01-15 | Tdk Corporation | Nonlinear resistor ceramic composition, electronic component, and multilayer chip varistor |
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| JPS60107802A (ja) * | 1983-11-16 | 1985-06-13 | 株式会社富士電機総合研究所 | 電圧非直線抵抗素子 |
| DE69317407T2 (de) | 1992-10-09 | 1998-08-06 | Tdk Corp | Widerstandselement mit nichtlinearer spannungsabhängigkeit und herstellungsverfahren |
| JPH07320908A (ja) * | 1994-05-19 | 1995-12-08 | Tdk Corp | 酸化亜鉛系バリスタの製造方法および酸化亜鉛系バリスタ |
| CN1046172C (zh) * | 1996-12-31 | 1999-11-03 | 中国科学院等离子体物理研究所 | 氧化锌陶瓷线性电阻器的制造方法 |
| JP3822798B2 (ja) * | 2001-02-16 | 2006-09-20 | 太陽誘電株式会社 | 電圧非直線抵抗体及び磁器組成物 |
| JP4184172B2 (ja) * | 2003-06-30 | 2008-11-19 | Ｔｄｋ株式会社 | 電圧非直線性抵抗体磁器組成物、電子部品及び積層チップバリスタ |
| CN100394517C (zh) * | 2004-07-10 | 2008-06-11 | 华中科技大学 | ZnO陶瓷薄膜低压压敏电阻的制备方法 |
| CN100382205C (zh) * | 2005-04-26 | 2008-04-16 | 华东师范大学 | 高电位梯度氧化锌压敏电阻材料的制备和应用 |
| KR100821274B1 (ko) * | 2006-07-19 | 2008-04-10 | 조인셋 주식회사 | 칩 세라믹 전자부품 |
| JP5088029B2 (ja) * | 2007-07-19 | 2012-12-05 | Ｔｄｋ株式会社 | バリスタ |
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- 2010-02-01 CN CN2010800060182A patent/CN102300832A/zh active Pending
- 2010-02-01 CN CN201610007173.5A patent/CN105622088A/zh active Pending
- 2010-02-01 WO PCT/EP2010/051188 patent/WO2010089279A2/de not_active Ceased
- 2010-02-01 JP JP2011546868A patent/JP5833929B2/ja active Active
- 2010-02-01 KR KR1020117020443A patent/KR101667073B1/ko active Active
- 2010-02-01 EP EP10702118.0A patent/EP2393761B1/de active Active
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100785A (en) * | 1997-03-21 | 2000-08-08 | Mitsubishi Denki Kabushiki Kaisha | Voltage nonlinear resistor and lightning arrester |
| US20090015367A1 (en) * | 2007-07-10 | 2009-01-15 | Tdk Corporation | Nonlinear resistor ceramic composition, electronic component, and multilayer chip varistor |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201036003A (en) | 2010-10-01 |
| DE102009023846B4 (de) | 2024-02-01 |
| US20110319255A1 (en) | 2011-12-29 |
| JP2012516825A (ja) | 2012-07-26 |
| EP2393761A2 (de) | 2011-12-14 |
| EP2393761B1 (de) | 2017-04-05 |
| KR101667073B1 (ko) | 2016-10-17 |
| DE102009023846A1 (de) | 2010-08-05 |
| CN105622088A (zh) | 2016-06-01 |
| WO2010089279A2 (de) | 2010-08-12 |
| JP5833929B2 (ja) | 2015-12-16 |
| CN102300832A (zh) | 2011-12-28 |
| KR20110122712A (ko) | 2011-11-10 |
| WO2010089279A3 (de) | 2010-10-14 |
| US8487735B2 (en) | 2013-07-16 |
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