KR20090006017A - 전압 비직선성 저항체 자기 조성물, 전자 부품 및 적층 칩배리스터 - Google Patents
전압 비직선성 저항체 자기 조성물, 전자 부품 및 적층 칩배리스터 Download PDFInfo
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Abstract
Description
Claims (13)
- 산화아연을 포함하는 주성분, 희토류 금속의 산화물을 포함하는 제1 부성분, Ca의 산화물을 포함하는 제2 부성분 및 Si의 산화물을 포함하는 제3 부성분을 포함하고, 주성분 100㏖에 대한 제2 부성분의 비율이, Ca로 환산하여 2원자% 이상 80원자% 미만이고, 주성분 100㏖에 대한 제3 부성분의 비율이, Si로 환산하여 1원자% 이상 40원자% 미만이며, Ca와 Si의 원자비(Ca/Si)가 1 이상인, 전압 비직선성 저항체 자기 조성물.
- 제1항에 있어서, 제1 부성분에 포함되는 희토류 원소의 산화물이, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb 및 Lu로부터 선택된 1종 이상의 산화물이고, 주성분 100㏖에 대한 제1 부성분의 비율이, 희토류 원소로 환산하여 0.01원자% 초과 10원자% 미만인, 전압 비직선성 저항체 자기 조성물.
- 제1항에 있어서, 제1 부성분에 포함되는 희토류 원소의 산화물이 Pr의 산화물인, 전압 비직선성 저항체 자기 조성물.
- 제1항에 있어서, Co의 산화물을 포함하는 제4 부성분을 추가로 포함하고, 주성분 100㏖에 대한 제4 부성분의 비율이, Co로 환산하여 0.05원자% 초과 10원자% 미만인, 전압 비직선성 저항체 자기 조성물.
- 제1항에 있어서, IIIB족 원소로부터 선택된 1종 이상의 산화물을 포함하는 제5 부성분을 추가로 포함하고, 주성분 100㏖에 대한 제5 부성분의 비율이, 선택된 IIIB족 원소로 환산하여 0.0005원자% 이상 0.5원자% 이하인, 전압 비직선성 저항체 자기 조성물.
- 제5항에 있어서, IIIB족 원소가 B, Al, Ga 및 In인, 전압 비직선성 저항체 자기 조성물.
- 제1항에 있어서, IA족 원소로부터 선택된 1종 이상의 산화물을 포함하는 제6 부성분을 추가로 포함하고, 주성분 100㏖에 대한 제6 부성분의 비율이, 선택된 IA족 원소로 환산하여 5원자% 미만인, 전압 비직선성 저항체 자기 조성물.
- 제7항에 있어서, IA족 원소가 Na, K, Rb 및 Cs인, 전압 비직선성 저항체 자기 조성물.
- 제1항에 있어서, Ca를 제외한 IIA족 원소로부터 선택된 1종 이상의 산화물을 포함하는 제7 부성분을 추가로 포함하고, 주성분 100㏖에 대한 제7 부성분의 비율이, 선택된 IIA족 원소로 환산하여 1원자% 미만인, 전압 비직선성 저항체 자기 조성물.
- 제9항에 있어서, IIA족 원소가 Mg, Sr 및 Ba인, 전압 비직선성 저항체 자기 조성물.
- 제1항에 있어서, Cr 및 Mo로부터 선택된 1종 이상의 산화물을 포함하는 제8 부성분을 추가로 포함하고, 주성분 100㏖에 대한 제8 부성분의 비율이, 각 Cr 및 Mo로 환산하여 10원자% 미만인, 전압 비직선성 저항체 자기 조성물.
- 전압 비직선성 저항체층이, 산화아연을 포함하는 주성분, 희토류 금속의 산화물을 포함하는 제1 부성분, Ca의 산화물을 포함하는 제2 부성분 및 Si의 산화물을 포함하는 제3 부성분을 포함하고, 주성분 100㏖에 대한 제2 부성분의 비율이, Ca로 환산하여 2원자% 이상 80원자% 미만이고, 주성분 100㏖에 대한 제3 부성분의 비율이, Si로 환산하여 1원자% 이상 40원자% 미만이고, Ca와 Si의 원자비(Ca/Si)가 1 이상인, 전압 비직선성 저항체 자기 조성물로 구성되어 있는 전자 부품.
- 전압 비직선성 저항체층이, 산화아연을 포함하는 주성분, 희토류 금속의 산화물을 포함하는 제1 부성분, Ca의 산화물을 포함하는 제2 부성분 및 Si의 산화물을 포함하는 제3 부성분을 포함하고, 주성분 100㏖에 대한 제2 부성분의 비율이, Ca로 환산하여 2원자% 이상 80원자% 미만이고, 주성분 100㏖에 대한 제3 부성분의 비율이, Si로 환산하여 1원자% 이상 40원자% 미만이며, Ca와 Si의 원자비(Ca/Si)가 1 이상인, 전압 비직선성 저항체 자기 조성물로 구성되어 있는 적층 칩 배리스터.
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TW201221501A (en) * | 2010-11-26 | 2012-06-01 | Sfi Electronics Technology Inc | Process for producing ZnO varistor particularly having internal electrode composed of pure silver and sintered at a lower sintering temperature |
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