KR101648101B1 - 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법 - Google Patents

저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법 Download PDF

Info

Publication number
KR101648101B1
KR101648101B1 KR1020127034243A KR20127034243A KR101648101B1 KR 101648101 B1 KR101648101 B1 KR 101648101B1 KR 1020127034243 A KR1020127034243 A KR 1020127034243A KR 20127034243 A KR20127034243 A KR 20127034243A KR 101648101 B1 KR101648101 B1 KR 101648101B1
Authority
KR
South Korea
Prior art keywords
thin film
ultra thin
traces
absorption traces
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020127034243A
Other languages
English (en)
Korean (ko)
Other versions
KR20130086547A (ko
Inventor
쿠르트 에이. 슈로더
로버트 피. 벤즈
Original Assignee
엔씨씨 나노, 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엔씨씨 나노, 엘엘씨 filed Critical 엔씨씨 나노, 엘엘씨
Publication of KR20130086547A publication Critical patent/KR20130086547A/ko
Application granted granted Critical
Publication of KR101648101B1 publication Critical patent/KR101648101B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/0266—Local curing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/0272—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould using lost heating elements, i.e. heating means incorporated and remaining in the formed article
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0855—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using microwave
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0866—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
    • B29C2035/0877—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using electron radiation, e.g. beta-rays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Oral & Maxillofacial Surgery (AREA)
  • Thermal Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020127034243A 2010-06-02 2011-06-02 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법 Active KR101648101B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35076510P 2010-06-02 2010-06-02
US61/350,765 2010-06-02
PCT/US2011/038937 WO2011153357A1 (en) 2010-06-02 2011-06-02 Method for providing lateral thermal processing of thin films on low-temperature substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020157035388A Division KR101655879B1 (ko) 2010-06-02 2011-06-02 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법

Publications (2)

Publication Number Publication Date
KR20130086547A KR20130086547A (ko) 2013-08-02
KR101648101B1 true KR101648101B1 (ko) 2016-08-16

Family

ID=45064782

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127034243A Active KR101648101B1 (ko) 2010-06-02 2011-06-02 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법
KR1020157035388A Active KR101655879B1 (ko) 2010-06-02 2011-06-02 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020157035388A Active KR101655879B1 (ko) 2010-06-02 2011-06-02 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법

Country Status (7)

Country Link
US (3) US8557642B2 (https=)
EP (1) EP2576860B1 (https=)
JP (4) JP5780682B2 (https=)
KR (2) KR101648101B1 (https=)
CN (2) CN103038389B (https=)
CA (1) CA2801900C (https=)
WO (1) WO2011153357A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
US9862640B2 (en) 2010-01-16 2018-01-09 Cardinal Cg Company Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US11155493B2 (en) 2010-01-16 2021-10-26 Cardinal Cg Company Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US10000965B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductive coating technology
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
US9639001B2 (en) * 2014-02-04 2017-05-02 Raytheon Company Optically transitioned metal-insulator surface
US9728668B2 (en) 2014-02-04 2017-08-08 Raytheon Company Integrated photosensitive film and thin LED display
WO2016040913A2 (en) 2014-09-12 2016-03-17 Board Of Regents, The University Of Texas System Photonic curing of nanocrystal films for photovoltaics
CN111902237B (zh) * 2018-01-19 2022-04-26 Ncc纳诺责任有限公司 用于在热脆性基板上固化焊膏的方法
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same
JP7203417B2 (ja) 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
EP3928966A1 (en) 2020-06-26 2021-12-29 Carl Zeiss Vision International GmbH Method for manufacturing a coated lens
TWI908917B (zh) * 2020-11-25 2025-12-21 美商應用材料股份有限公司 用於低溫處理的補充能量
US11996384B2 (en) 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087194A (ja) 2008-09-30 2010-04-15 Renesas Technology Corp 半導体装置の製造方法およびマスクの製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302230A (en) 1980-02-27 1994-04-12 Ricoh Company, Ltd. Heat treatment by light irradiation
EP0169485B1 (en) * 1984-07-17 1991-12-04 Nec Corporation Method and apparatus for inducing photochemical reaction
JPH0715881B2 (ja) * 1984-12-20 1995-02-22 ソニー株式会社 半導体薄膜の熱処理方法
JPH0727198B2 (ja) * 1987-02-18 1995-03-29 キヤノン株式会社 多層膜反射型マスク
JPH02275641A (ja) * 1989-04-17 1990-11-09 Seiko Epson Corp 半導体装置の製造方法
US5180226A (en) * 1991-10-30 1993-01-19 Texas Instruments Incorporated Method and apparatus for precise temperature measurement
CA2137632A1 (en) * 1993-12-17 1995-06-18 Douglas S. Dunn Ablative flashlamp imaging
JPH09116158A (ja) * 1995-10-17 1997-05-02 Hitachi Ltd 軽量基板薄膜半導体装置および液晶表示装置
US5950078A (en) * 1997-09-19 1999-09-07 Sharp Laboratories Of America, Inc. Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates
US6159832A (en) * 1998-03-18 2000-12-12 Mayer; Frederick J. Precision laser metallization
JP3586558B2 (ja) * 1998-04-17 2004-11-10 日本電気株式会社 薄膜の改質方法及びその実施に使用する装置
TW457553B (en) 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
JP3980465B2 (ja) * 2001-11-09 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
JP2005150608A (ja) * 2003-11-19 2005-06-09 Seiko Epson Corp ガラス基板の光処理方法およびデバイス
TW200541079A (en) * 2004-06-04 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallizing method, thin-film transistor manufacturing method, thin-film transistor, and display device
JP2006066902A (ja) * 2004-07-28 2006-03-09 Advanced Lcd Technologies Development Center Co Ltd 半導体装置の製造方法
US20070037346A1 (en) * 2005-02-22 2007-02-15 Grant Robert W Rapid thermal annealing of targeted thin film layers
US7943447B2 (en) * 2007-08-08 2011-05-17 Ramesh Kakkad Methods of fabricating crystalline silicon, thin film transistors, and solar cells
JP5447909B2 (ja) * 2008-04-25 2014-03-19 株式会社日本製鋼所 薄膜材料の結晶化方法及びその装置
US8410712B2 (en) * 2008-07-09 2013-04-02 Ncc Nano, Llc Method and apparatus for curing thin films on low-temperature substrates at high speeds
US20100170566A1 (en) * 2009-01-06 2010-07-08 Arthur Don Harmala Apparatus and method for manufacturing polymer solar cells
JP2010219207A (ja) * 2009-03-16 2010-09-30 Sony Corp 金属−絶縁体相転移材料を用いた機能要素の形成方法及びこれによって形成された機能要素、並びに機能デバイスの製造方法及びこれによって製造された機能デバイス
JP7027198B2 (ja) 2018-03-06 2022-03-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087194A (ja) 2008-09-30 2010-04-15 Renesas Technology Corp 半導体装置の製造方法およびマスクの製造方法

Also Published As

Publication number Publication date
CN103038389A (zh) 2013-04-10
US9006047B2 (en) 2015-04-14
CA2801900A1 (en) 2011-12-08
EP2576860A1 (en) 2013-04-10
EP2576860A4 (en) 2015-04-08
KR20160003297A (ko) 2016-01-08
KR20130086547A (ko) 2013-08-02
JP2019071453A (ja) 2019-05-09
JP5780682B2 (ja) 2015-09-16
EP2576860B1 (en) 2017-08-09
US10553450B2 (en) 2020-02-04
US20150311092A1 (en) 2015-10-29
CA2801900C (en) 2018-03-13
JP2016195285A (ja) 2016-11-17
WO2011153357A1 (en) 2011-12-08
CN104992901B (zh) 2017-03-15
US20110300676A1 (en) 2011-12-08
JP2014505348A (ja) 2014-02-27
US20140017857A1 (en) 2014-01-16
CN103038389B (zh) 2015-06-17
CN104992901A (zh) 2015-10-21
KR101655879B1 (ko) 2016-09-08
US8557642B2 (en) 2013-10-15
JP2015149513A (ja) 2015-08-20
JP6359484B2 (ja) 2018-07-18

Similar Documents

Publication Publication Date Title
KR101648101B1 (ko) 저온 기판들 상의 박막들의 측방향 열적 프로세싱을 제공하기 위한 방법
JP5331382B2 (ja) 半導体素子の製造方法
JP2015149513A5 (https=)
Dellis et al. Rapid laser-induced photochemical conversion of sol–gel precursors to In 2 O 3 layers and their application in thin-film transistors
Yoo et al. Sub-second photo-annealing of solution-processed metal oxide thin-film transistors via irradiation of intensely pulsed white light
WO2006094231A1 (en) System and method for forming conductive material on a substrate
CN102593188A (zh) 反相器
Tak et al. High-Throughput Open-Air Plasma Activation of Metal-Oxide Thin Films with Low Thermal Budget
US20170316930A1 (en) Methods for conformal treatment of dielectric films with low thermal budget
Trifunovic et al. Solution-based polycrystalline silicon transistors produced on a paper substrate
Jung et al. Enhancement of electrical properties of a-IGZO thin film transistor by low temperature (150° C) microwave annealing for flexible electronics
US20170125263A1 (en) Method of doping 2-dimensional semiconductor
Habibi et al. Facile and low-cost mechanical techniques for the fabrication of solution-processed polymer and perovskite thin film transistors
HK1178219A (en) Method for providing lateral thermal processing of thin films on low-temperature substrates
Noh et al. Pulse thermal processing for low thermal budget integration of IGZO thin film transistors
Thompson et al. Millisecond microwave annealing: Driving microelectronics nano
Yang et al. Intense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors
Balestra Silicon‐On‐Insulator Devices
Sameshima et al. Minority carrier lifetime behavior in crystalline silicon in rapid laser heating
JP2013021034A (ja) レーザアニール法及び半導体装置の製造方法
Hishitani et al. Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors
TWI587422B (zh) 晶圓微波退火之晶圓承載結構及其應用
Park et al. P‐197: Late‐News Poster: Selective Laser Activation Process for Indium Gallium Zinc Oxide Thin Film Transistors
TWI574409B (zh) 半導體結構與其形成方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

A107 Divisional application of patent
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

X091 Application refused [patent]
T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20190726

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20200803

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20210809

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20220726

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000