CN111902237B - 用于在热脆性基板上固化焊膏的方法 - Google Patents

用于在热脆性基板上固化焊膏的方法 Download PDF

Info

Publication number
CN111902237B
CN111902237B CN201880086970.4A CN201880086970A CN111902237B CN 111902237 B CN111902237 B CN 111902237B CN 201880086970 A CN201880086970 A CN 201880086970A CN 111902237 B CN111902237 B CN 111902237B
Authority
CN
China
Prior art keywords
solder paste
absorbing layer
brittle substrate
light
light absorbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880086970.4A
Other languages
English (en)
Other versions
CN111902237A (zh
Inventor
R·J·亨德里克斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCC Nano LLC
Original Assignee
NCC Nano LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCC Nano LLC filed Critical NCC Nano LLC
Publication of CN111902237A publication Critical patent/CN111902237A/zh
Application granted granted Critical
Publication of CN111902237B publication Critical patent/CN111902237B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/0008Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016Brazing of electronic components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/005Soldering by means of radiant energy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/19Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244Powders, particles or spheres; Preforms made therefrom
    • B23K35/025Pastes, creams, slurries
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145Organic substrates, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494Heating methods for reflowing of solder
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/42Printed circuits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/30Organic material
    • B23K2103/40Paper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/30Organic material
    • B23K2103/42Plastics
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54Glass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262Sn as the principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/13198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13199Material of the matrix
    • H01L2224/1329Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/13198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298Fillers
    • H01L2224/13299Base material
    • H01L2224/133Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/7526Polychromatic heating lamp
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75261Laser
    • H01L2224/75262Laser in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75261Laser
    • H01L2224/75263Laser in the upper part of the bonding apparatus, e.g. in the bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81192Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/8122Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/8123Polychromatic or infrared lamp heating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/81234Applying energy for connecting using means for applying energy being within the device, e.g. integrated heater
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • H01L2224/81815Reflow soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/1579Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3512Cracking
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0274Optical details, e.g. printed circuits comprising integral optical means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0104Properties and characteristics in general
    • H05K2201/0108Transparent
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0104Properties and characteristics in general
    • H05K2201/0112Absorbing light, e.g. dielectric layer with carbon filler for laser processing
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2054Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics

Abstract

本申请公开了一种用于在热脆性基板上固化焊膏的方法。该方法包括:将光反射层和光吸收层印刷在热脆性基板上;在该光反射层和该光吸收层上选择性地沉积多个导电迹线;然后在与该光吸收层的位置相对应的选择性位置上施加焊膏;在将组件放置在该焊膏上之后,从一侧对该热脆性基板照射均匀的脉冲光。该光吸收层吸收该脉冲光并被加热,随后该热量通过热传导传递至该焊膏和该组件,以加热和熔化该焊膏。

Description

用于在热脆性基板上固化焊膏的方法
技术领域
本发明总体上涉及固化过程,尤其涉及一种使用脉冲光在热脆性基板上固化焊膏的方法。
背景技术
在印刷电子领域,当前的趋势是不再将基于陶瓷、玻璃或环氧纤维玻璃的电路板(例如FR4)作为基板材料,而是考虑到降低成本和外形灵活等因素而日渐趋于相对便宜的基板。但是,新的基板材料(例如PEN、PET、聚碳酸酯和纸)比之前的材料显得更易碎。当需要高温来处理薄膜或将离散的组件粘附到基板上时,这可能会导致问题出现。例如,把多个组件焊接到热脆性基板上的过程将变得非常困难,因为处理常规焊料需要的温度比那些热脆性基板能够承受的温度要高得多。
本公开提供了一种用于在热脆性基板上固化焊膏的改进方法。
发明内容
根据优选实施例,将光反射层和光吸收层印刷在热脆性基板上。多个导电迹线选择性地沉积在该光反射层和光吸收层上。接着,将焊膏施加在与光吸收层的位置相对应的选择性位置上。在将组件放置在焊膏上之后,用均匀的脉冲光从一侧照射该基板。光吸收层吸收该脉冲光并被加热,随后热量通过热传导传递到焊膏和组件,以加热和熔化该焊膏。
在以下详细的书面描述中,本发明的所有特征和优点将变得显而易见。
附图说明
当结合附图阅读时,通过参考以下对示例性实施例的详细描述,将能最好地理解本发明本身及其优选的使用方式、以及其他目的和优点,其中:
图1A-图1D描绘了根据第一实施例的使用脉冲光在热脆性基板上固化焊膏的方法;和
图2A-图2E描绘了根据第二实施例的使用脉冲光在热脆性基板上固化焊膏的方法。
具体实施方式
当使用热脆性基板作为电路板时,需要克服的一个主要障碍是芯片连接。通常,将芯片粘附到热脆性基板上只有两种方法。第一种方法是使用低温焊料来粘附组件,第二种方法是使用导电环氧树脂来粘附组件。第一种方法的问题在于,低温焊料的性能远不如高温常规焊料的性能强健,并且热循环将可能导致低温焊料破裂。第二种方法的问题则是其成本会比使用常规焊料更昂贵。此外,导电环氧树脂的机械性更脆弱,并且第二种方法中使用的导电粘合剂的电阻率比低温焊料差得多。因此,由于性能低和/或成本高,上述两种方法都不是优选的。
一般而言,优选使用标准的兼容于《关于限制在电子电气设备中使用某些有害成分的指令》(RoHS)规定的焊料,例如Sn 96.5/Ag 3.0/Cu 0.5合金或Sn 96.5/Ag 3.5合金。这些焊料的液相线温度约为219℃。典型的烤箱回流焊接温度条件是在200℃以上的温度下保持5分钟。不幸的是,烤箱回流焊接技术无法使用热脆性基板(例如PEN(最高工作温度为180℃)、PET(最高工作温度为150℃)、聚碳酸酯(最高工作温度为115-130℃)或纸(最高工作温度为150℃))。
过去,光子固化技术已被用于在热脆性基板上处理薄膜。基本上,短脉冲光所具有的较高温度和较低热预算的组合可用于处理薄膜而不会损坏热脆性基板。现在,光子固化技术具有减轻在热脆性基板上热处理焊膏的问题的潜力。从理论上讲,可以在很短的时间内加热焊料,以使热脆性基板也可以加热至超过其最大的工作温度。然而,实际上,这不能解决上述问题,因为光子固化技术通常适用于在相对较厚的基板上处理薄膜。在光子固化技术中热脆性基板上的薄膜被闪光灯发出的脉冲光以非常快的速度加热到超过通常不至于损坏热脆性基板的温度。经过脉冲光加热之后,薄膜将通过由薄膜到热脆性基板的热传导而迅速冷却。这是可能实现的,因为热脆性基板比薄膜厚得多,并且具有比薄膜更大的热质量。热脆性基板的较大热质量和热量从薄膜到热脆性基板的热传导相结合,可通过最大限度地减少在高温下花费的时间来帮助防止对热脆性基板造成损害,即使峰值温度通常高于热脆性基板公布的最高工作温度。
然而,在附接组件的情况下,这些组件以及焊膏通常比热脆性基板厚。因此,用脉冲光对这些组件进行焊接所需能量的量也将在该过程中扭曲该热脆性基板。例如,加工焊膏所需的辐射量为3至30J/cm2之间。能量的该量值通常高于大多数导电迹线的损坏阈值,这些导电迹线会吸收闪光灯的一些脉冲光,从而沉积在热脆性基板上。发生这种情况时,导电迹线可能会变热,并可能在导电迹线下方或附近烧蚀或局部扭曲该热脆性基板。此外,快速加热会释放焊膏中的挥发物,从而导致焊膏的内聚被破坏。换句话说,快速加热产生的气体会使焊膏爆炸,并且无法建立起良好的焊接连接。
使用来自闪光灯的脉冲光来加热焊膏的另一个问题是,不同面积和厚度的组件需要不同的辐射照射。由于半导体组件是导热的,因此需要将其加热到与需要加热焊膏相同的温度,因为它们的导热率远高于基板的导热率。这意味着不同厚度或面积的组件因其热质量不同而需要不同的辐射照射量。当不同尺寸的组件位于同一基板上时,不可能同时固化所有焊料连接,而不过度固化某些焊料且其他焊料又不会固化不足。
为了解决与光子固化技术相关的上述问题,本发明提供了一种用于将电子组件焊接到热脆性基板上的改进方法。
现在参考附图,特别是参考图1A-图1D,其示出了根据第一实施例的使用脉冲光在热脆性基板上固化焊膏的方法。首先,如图1A所示,将光反射层11和光吸收层12选择性地印刷在热脆性基板10上。光吸收层12的位置对应于将被用于连接到组件的焊膏的未来位置。优选地,该热脆性基板10是光学透明的,其可以是PEN、PET、聚碳酸酯或纸。
接下来,如图1B所示,将多个导电迹线15选择性地沉积在光反射层11和光吸收层12上。然后如图1C所示,将焊膏16a-16d施加到对应于光吸收层12的位置。例如,焊膏16a位于光吸收层12a的上方、焊膏16b位于光吸收层12b的上方、焊膏16c位于光吸收层12c的上方、以及焊膏16d位于光吸收层12d的上方。
在将组件18a放置在焊膏16a、16b上并且将组件18b放置在焊膏16c、16d上之后,如图1D所示,使用均匀的脉冲光自热脆性基板10的底部(非组件侧)照射整个结构。光反射层11反射该脉冲光,而光吸收层12吸收脉冲光并被加热。该热量随后经由热传导传递到焊膏16a-16d和组件18a、18b,以对焊膏16a-16d进行加热,从而熔化焊膏16a-16d。
即使组件18a和18b具有不同的尺寸并且需要不同量的能量,也可以向每个焊膏16a-16d传递精确量的能量。这是由位于焊膏16a-16d下面的各个光吸收层12的各种尺寸来控制的。另外,通常会被烧蚀或加热到足以使它们的温度扭曲基板10的导电迹线15将由光反射层11保护。
现在参考图2A-图2E,其示出了根据第二实施例的使用脉冲光在热脆性基板上固化焊膏的方法。类似于第一实施例,如图2A所示,将光反射层21和光吸收层22选择性地印刷在热脆性基板20上。光吸收层22的位置对应于将被用于连接到组件的焊膏的未来位置。优选地,该热脆性基板20是光学透明的,其可以是PEN、PET、聚碳酸酯或纸。
接下来,如图2B所示,将多个导电迹线25选择性地沉积在光反射层21和光吸收层22上。然后如图2C所示,将焊膏26a-26d施加到对应于光吸收层22的位置。然后如图2D所示,将第二光反射层23沉积在照射的(未被焊膏覆盖的)导电迹线25上和照射的(未被焊膏覆盖的)光反射层21上。
在将组件28a放置在焊膏26a、26b上并且将组件28b放置在焊膏26c、26d上之后,如图2E所示,使用均匀的脉冲光自顶部和底部照射整个结构。光反射层21和23反射脉冲光,而光吸收层22吸收脉冲光并被加热。该热量随后经由热传导传递到焊膏26a-26d和组件28a、28b,以对焊膏26a-26d进行加热,从而熔化焊膏26a-26d。
在图1A-图1D所示的第一实施例中,光反射层11不需要选择性地施加。可以简单地将其涂覆在基板10和光吸收层12上。当用脉冲光加热光吸收层12时,来自光吸收层12的热量将传导通过光反射层11以加热焊膏15。在图2A-图2E所示的第二实施例中,在面向光反射层11的基板10上也是如此。在第二实施例中,组件28A-28B用作堆叠的顶面侧上的吸收剂,以加热焊膏26a-26d。
如前所述,本发明提供了一种改进的方法,该方法通过将一个或多个印刷掩膜施加到热脆性基板上以允许选择性地吸收来自闪光灯的脉冲光,从而在空间上调节从闪光灯发出的辐射照射,以选择性地加热焊膏而不会损坏相邻的结构或热脆性基板。可以使用相同的脉冲光将大小和厚度不同的组件连接到热脆性基板上。整个过程可以在一秒钟之内完成。除了固化焊膏外,本发明的方法还可用于热固化多种材料,例如导电环氧树脂、粘合剂或其他材料。
本发明方法的一个优点是标准的RoHS兼容焊料可以与热脆性基板一起使用。本发明方法的另一个优点是不需要光固化源的配准(registration)。配准由印刷的掩膜提供。
尽管已经参照优选实施例具体示出和描述了本发明,但是本领域技术人员将理解,在不脱离本发明的精神和范围的情况下,可以在形式和细节上进行各种改变。

Claims (21)

1.一种用于在热脆性基板上固化焊膏的方法,所述方法包括:
将光反射层和光吸收层印刷在热脆性基板上;
在所述光反射层和所述光吸收层上选择性地沉积多个导电迹线;
在与所述光吸收层的位置相对应的选择性位置上施加焊膏;
将组件放置在所述焊膏上;以及从底部对所述热脆性基板照射均匀的脉冲光,其中,所述光吸收层吸收所述脉冲光并被加热,热量随后通过热传导传递至所述焊膏和所述组件,以熔化所述焊膏。
2.根据权利要求1所述的方法,其特征在于,所述光吸收层的位置对应于将被用于连接至所述组件的所述焊膏的位置。
3.根据权利要求1所述的方法,其特征在于,所述热脆性基板是光学透明的。
4.根据权利要求1所述的方法,其特征在于,所述热脆性基板是PEN。
5.根据权利要求1所述的方法,其特征在于,所述热脆性基板是PET。
6.根据权利要求1所述的方法,其特征在于,所述热脆性基板是聚碳酸酯。
7.根据权利要求1所述的方法,其特征在于,所述热脆性基板是纸。
8.根据权利要求1所述的方法,其特征在于,所述光吸收层的面积与所述组件的热质量和所述焊膏的热质量成正比。
9.根据权利要求1所述的方法,其特征在于,所述焊膏符合RoHS指令的要求。
10.根据权利要求1所述的方法,其特征在于,用于处理所述焊膏的所述脉冲光的能量在3至30J/cm2之间。
11.一种用于在热脆性基板上固化焊膏的方法,所述方法包括:
将第一光反射层和光吸收层印刷在热脆性基板上;
在所述光反射层和所述光吸收层上选择性地沉积多个导电迹线;
在与所述光吸收层的位置相对应的选择性位置上施加焊膏;
在所述导电迹线上和所述光吸收层上选择性地沉积第二光反射层;
将组件放置在所述焊膏上;以及
从顶部和底部对所述热脆性基板照射均匀的脉冲光,其中,所述光吸收层和所述组件吸收所述脉冲光并被加热,热量随后通过热传导传递至所述焊膏,以熔化所述焊膏。
12.根据权利要求11所述的方法,其特征在于,所述光吸收层的位置对应于将被用于连接到所述组件的所述焊膏的位置。
13.根据权利要求11所述的方法,其特征在于,所述热脆性基板是光学透明的。
14.根据权利要求11所述的方法,其特征在于,所述热脆性基板是PEN。
15.根据权利要求11所述的方法,其特征在于,所述热脆性基板是PET。
16.根据权利要求11所述的方法,其特征在于,所述热脆性基板是聚碳酸酯。
17.根据权利要求11所述的方法,其特征在于,所述热脆性基板是纸。
18.根据权利要求11所述的方法,其特征在于,所述光吸收层的面积与所述组件的热质量和所述焊膏的热质量成正比。
19.根据权利要求11所述的方法,其特征在于,所述焊膏符合RoHS指令的要求。
20.根据权利要求11所述的方法,其特征在于,用于处理所述焊膏的所述脉冲光的能量在3至30J/cm2之间。
21.一种用于在热脆性基板上固化焊膏的方法,所述方法包括:
将光反射层和光吸收层印刷在热脆性基板上;
在所述光反射层和所述光吸收层上选择性地沉积多个导电迹线;
在与所述光吸收层的位置相对应的选择性位置上施加导电环氧树脂;
将组件放置在所述导电环氧树脂上;以及
从一侧对所述热脆性基板照射均匀的脉冲光,其中,所述光吸收层吸收所述脉冲光并被加热,热量随后通过热传导传递至所述导电环氧树脂和所述组件,以熔化所述导电环氧树脂。
CN201880086970.4A 2018-01-19 2018-01-19 用于在热脆性基板上固化焊膏的方法 Active CN111902237B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2018/014501 WO2019143358A1 (en) 2018-01-19 2018-01-19 Method for curing solder paste on a thermally fragile substrate

Publications (2)

Publication Number Publication Date
CN111902237A CN111902237A (zh) 2020-11-06
CN111902237B true CN111902237B (zh) 2022-04-26

Family

ID=67301079

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880086970.4A Active CN111902237B (zh) 2018-01-19 2018-01-19 用于在热脆性基板上固化焊膏的方法

Country Status (6)

Country Link
EP (1) EP3740340A4 (zh)
JP (1) JP7118463B2 (zh)
KR (1) KR102405231B1 (zh)
CN (1) CN111902237B (zh)
CA (1) CA3088725A1 (zh)
WO (1) WO2019143358A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116110805B (zh) * 2023-04-13 2023-07-11 深圳宏芯宇电子股份有限公司 芯片键合方法、结构及存储器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101645403A (zh) * 2008-08-07 2010-02-10 三星移动显示器株式会社 制造平板显示装置的方法
CN103180079A (zh) * 2010-11-08 2013-06-26 松下电器产业株式会社 焊料转印基材的制造方法、焊料预涂方法、及焊料转印基材
CN104160489A (zh) * 2012-04-18 2014-11-19 应用材料公司 先进退火工艺中减少颗粒的设备和方法
CN104985350A (zh) * 2015-07-03 2015-10-21 北京康普锡威科技有限公司 一种Sn-Bi/Cu无铅复合焊接材料
TW201738989A (zh) * 2016-04-26 2017-11-01 Jsr Corp 基材的處理方法及半導體裝置的製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3509317A (en) * 1967-08-01 1970-04-28 North American Rockwell Indirect radiant heat soldering apparatus
JPS5439909B2 (zh) * 1973-11-09 1979-11-30
US5088189A (en) * 1990-08-31 1992-02-18 Federated Fry Metals Electronic manufacturing process
JPH05109824A (ja) * 1991-10-15 1993-04-30 Omron Corp 電子部品のフリツプチツプ実装方法
JP3285294B2 (ja) * 1995-08-08 2002-05-27 太陽誘電株式会社 回路モジュールの製造方法
JPH11243224A (ja) * 1997-12-26 1999-09-07 Canon Inc 光起電力素子モジュール及びその製造方法並びに非接触処理方法
US8945686B2 (en) * 2007-05-24 2015-02-03 Ncc Method for reducing thin films on low temperature substrates
CN103038389B (zh) * 2010-06-02 2015-06-17 Ncc纳诺责任有限公司 用于提供在低温衬底上的薄膜的横向热处理方法
JP2013098338A (ja) * 2011-10-31 2013-05-20 Nisshinbo Mechatronics Inc 電子部品の製造装置、電子部品の製造方法、およびled照明の製造方法
JP6032637B2 (ja) * 2012-07-05 2016-11-30 パナソニックIpマネジメント株式会社 部品実装基板の製造システム及び製造方法
FR2994768B1 (fr) * 2012-08-21 2016-02-05 Commissariat Energie Atomique Hybridation face contre face de deux composants microelectroniques a l'aide d'un recuit uv
US20140369033A1 (en) * 2013-06-12 2014-12-18 Paul Palfreyman Portable lighting systems incorporating deformable light sheets
WO2016103800A1 (ja) * 2014-12-24 2016-06-30 ソニー株式会社 部品除去装置、基板、部品除去方法、部品リペア装置および部品実装基板
FR3034913B1 (fr) * 2015-04-09 2017-05-05 Commissariat Energie Atomique Procede de decoupe d'un electrode d'un generateur electrochimique
JP6726215B2 (ja) * 2015-04-28 2020-07-22 ネーデルランドセ・オルガニサティ・フォール・トゥーヘパスト−ナトゥールウェテンスハッペライク・オンデルズーク・テーエヌオー フラッシュランプおよびマスクを使用して複数のチップをはんだ付けするための装置および方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101645403A (zh) * 2008-08-07 2010-02-10 三星移动显示器株式会社 制造平板显示装置的方法
CN103180079A (zh) * 2010-11-08 2013-06-26 松下电器产业株式会社 焊料转印基材的制造方法、焊料预涂方法、及焊料转印基材
CN104160489A (zh) * 2012-04-18 2014-11-19 应用材料公司 先进退火工艺中减少颗粒的设备和方法
CN104985350A (zh) * 2015-07-03 2015-10-21 北京康普锡威科技有限公司 一种Sn-Bi/Cu无铅复合焊接材料
TW201738989A (zh) * 2016-04-26 2017-11-01 Jsr Corp 基材的處理方法及半導體裝置的製造方法

Also Published As

Publication number Publication date
CA3088725A1 (en) 2019-07-25
EP3740340A1 (en) 2020-11-25
WO2019143358A1 (en) 2019-07-25
KR102405231B1 (ko) 2022-06-03
JP2021516451A (ja) 2021-07-01
CN111902237A (zh) 2020-11-06
EP3740340A4 (en) 2021-12-15
KR20200108340A (ko) 2020-09-17
JP7118463B2 (ja) 2022-08-16

Similar Documents

Publication Publication Date Title
CN100493299C (zh) 用于装配和焊接电路板的方法、回流焊炉和用于该方法的电路板
EP1962566B1 (en) Surface mount circuit board, method for manufacturing surface mount circuit board, and method for mounting surface mount electronic devices
US8059424B2 (en) Electronic board incorporating a heating resistor
JP2018519654A (ja) フラッシュランプを使用してチップを非接触移送およびはんだ付けするための装置および方法
WO2016175653A2 (en) Apparatus and method for soldering chips
CN111491462A (zh) 固晶结构及其制造方法
CN111902237B (zh) 用于在热脆性基板上固化焊膏的方法
US20120211268A1 (en) Light and heat resistant circuit board apparatus and method
US6583385B1 (en) Method for soldering surface mount components to a substrate using a laser
US7195145B2 (en) Electrical circuit apparatus and method for assembling same
US11647594B2 (en) Method for curing solder paste on a thermally fragile substrate
CN208657154U (zh) 用于附接发光半导体装置的柔性多层基板
US6700196B1 (en) Programmable multi-chip module
JP2011119561A (ja) プリント配線板、プリント回路板及びその製造方法
US10717236B2 (en) Curing a heat-curable material in an embedded curing zone
JPS63168088A (ja) 物品の加熱方法
CN101365302A (zh) 软性薄膜线路板的贴装方法
JP3136682B2 (ja) 多層配線基板の製造方法
CN104001925A (zh) 一种在导热塑料的led灯头上烧结银膜的方法
JP2008177520A (ja) リフロー半田付け方法及びリフロー半田付け装置
JPH02155291A (ja) 電子回路装置の製造法
JPH09298357A (ja) プリント配線基板へのハンダ溶着方法及びプリント配線 基板

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant