JP5780682B2 - 低温基板上の薄膜の側方熱処理を提供する方法 - Google Patents

低温基板上の薄膜の側方熱処理を提供する方法 Download PDF

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JP5780682B2
JP5780682B2 JP2013514223A JP2013514223A JP5780682B2 JP 5780682 B2 JP5780682 B2 JP 5780682B2 JP 2013514223 A JP2013514223 A JP 2013514223A JP 2013514223 A JP2013514223 A JP 2013514223A JP 5780682 B2 JP5780682 B2 JP 5780682B2
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thin film
substrate
film
traces
absorption
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JP2014505348A (ja
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カート エー． シュローダー，
カート エー． シュローダー，
ロバート ピー． ウェンツ，
ロバート ピー． ウェンツ，
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エヌシーシー ナノ， エルエルシー
エヌシーシー ナノ， エルエルシー
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    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
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    • B29C35/0266—Local curing
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    • B29C35/0272—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould using lost heating elements, i.e. heating means incorporated and remaining in the formed article
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Oral & Maxillofacial Surgery (AREA)
  • Thermal Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2013514223A 2010-06-02 2011-06-02 低温基板上の薄膜の側方熱処理を提供する方法 Active JP5780682B2 (ja)

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US35076510P 2010-06-02 2010-06-02
US61/350,765 2010-06-02
PCT/US2011/038937 WO2011153357A1 (en) 2010-06-02 2011-06-02 Method for providing lateral thermal processing of thin films on low-temperature substrates

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JP2013514223A Active JP5780682B2 (ja) 2010-06-02 2011-06-02 低温基板上の薄膜の側方熱処理を提供する方法
JP2015106595A Active JP6359484B2 (ja) 2010-06-02 2015-05-26 低温基板上の薄膜の側方熱処理を提供する方法
JP2016157478A Withdrawn JP2016195285A (ja) 2010-06-02 2016-08-10 低温基板上の薄膜の側方熱処理を提供する方法
JP2018241034A Pending JP2019071453A (ja) 2010-06-02 2018-12-25 低温基板上の薄膜の側方熱処理を提供する方法

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JP2016157478A Withdrawn JP2016195285A (ja) 2010-06-02 2016-08-10 低温基板上の薄膜の側方熱処理を提供する方法
JP2018241034A Pending JP2019071453A (ja) 2010-06-02 2018-12-25 低温基板上の薄膜の側方熱処理を提供する方法

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US (3) US8557642B2 (https=)
EP (1) EP2576860B1 (https=)
JP (4) JP5780682B2 (https=)
KR (2) KR101648101B1 (https=)
CN (2) CN103038389B (https=)
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WO (1) WO2011153357A1 (https=)

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US11155493B2 (en) 2010-01-16 2021-10-26 Cardinal Cg Company Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods
US10000965B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductive coating technology
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
US9639001B2 (en) * 2014-02-04 2017-05-02 Raytheon Company Optically transitioned metal-insulator surface
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WO2016040913A2 (en) 2014-09-12 2016-03-17 Board Of Regents, The University Of Texas System Photonic curing of nanocrystal films for photovoltaics
CN111902237B (zh) * 2018-01-19 2022-04-26 Ncc纳诺责任有限公司 用于在热脆性基板上固化焊膏的方法
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same
JP7203417B2 (ja) 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
EP3928966A1 (en) 2020-06-26 2021-12-29 Carl Zeiss Vision International GmbH Method for manufacturing a coated lens
TWI908917B (zh) * 2020-11-25 2025-12-21 美商應用材料股份有限公司 用於低溫處理的補充能量
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JP7027198B2 (ja) 2018-03-06 2022-03-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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