KR101586211B1 - 향상된 가스 유동 분포를 가진 열 반응기 - Google Patents

향상된 가스 유동 분포를 가진 열 반응기 Download PDF

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KR101586211B1
KR101586211B1 KR1020157031516A KR20157031516A KR101586211B1 KR 101586211 B1 KR101586211 B1 KR 101586211B1 KR 1020157031516 A KR1020157031516 A KR 1020157031516A KR 20157031516 A KR20157031516 A KR 20157031516A KR 101586211 B1 KR101586211 B1 KR 101586211B1
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substrate
volume
processing
gas flow
assembly
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KR20150132882A (ko
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밍-퀴(마이클) 트셍
노르만 탐
요시타카 요코타
아구스 탄드라
로버트 나바스카
메드란 베자트
선달 라마무르티
케달나쓰 산감
알렉산더 엔. 레네르
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D7/00—Forming, maintaining or circulating atmospheres in heating chambers
    • F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Formation Of Insulating Films (AREA)
KR1020157031516A 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기 Active KR101586211B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1543507P 2007-12-20 2007-12-20
US61/015,435 2007-12-20
PCT/US2008/087496 WO2009085992A2 (en) 2007-12-20 2008-12-18 Thermal reactor with improved gas flow distribution

Related Parent Applications (1)

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KR1020107016045A Division KR20100114037A (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기

Publications (2)

Publication Number Publication Date
KR20150132882A KR20150132882A (ko) 2015-11-26
KR101586211B1 true KR101586211B1 (ko) 2016-01-19

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KR1020157013062A Active KR101677438B1 (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기
KR1020157031516A Active KR101586211B1 (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기
KR1020107016045A Ceased KR20100114037A (ko) 2007-12-20 2008-12-18 향상된 가스 유동 분포를 가진 열 반응기

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US (3) US8056500B2 (enExample)
JP (3) JP5226082B2 (enExample)
KR (3) KR101677438B1 (enExample)
CN (1) CN101896995B (enExample)
TW (1) TWI366217B (enExample)
WO (1) WO2009085992A2 (enExample)

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KR102189137B1 (ko) * 2015-01-22 2020-12-09 에스케이실트론 주식회사 에피택셜 웨이퍼의 성장을 위한 리액터의 재가동 준비 방법
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CN107431033B (zh) * 2015-03-20 2021-10-22 应用材料公司 用于3d共形处理的原子层处理腔室
KR102350588B1 (ko) * 2015-07-07 2022-01-14 삼성전자 주식회사 인젝터를 갖는 박막 형성 장치
CN107403717B (zh) * 2016-04-28 2023-07-18 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计
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KR101846509B1 (ko) * 2017-03-29 2018-04-09 (주)앤피에스 열원 장치 및 이를 구비하는 기판 처리 장치
JP6925213B2 (ja) * 2017-09-22 2021-08-25 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
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KR102203878B1 (ko) * 2019-06-11 2021-01-15 한양대학교 산학협력단 기판 처리 장치 및 기판 처리 방법
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Also Published As

Publication number Publication date
WO2009085992A2 (en) 2009-07-09
KR20150132882A (ko) 2015-11-26
CN101896995B (zh) 2012-05-30
JP6119060B2 (ja) 2017-04-26
US20140079376A1 (en) 2014-03-20
CN101896995A (zh) 2010-11-24
US20120058648A1 (en) 2012-03-08
JP2013219344A (ja) 2013-10-24
US8608853B2 (en) 2013-12-17
US8888916B2 (en) 2014-11-18
JP2016036017A (ja) 2016-03-17
KR20150063591A (ko) 2015-06-09
US20090163042A1 (en) 2009-06-25
KR20100114037A (ko) 2010-10-22
JP2011508435A (ja) 2011-03-10
KR101677438B1 (ko) 2016-11-18
US8056500B2 (en) 2011-11-15
JP5226082B2 (ja) 2013-07-03
TW200943381A (en) 2009-10-16
TWI366217B (en) 2012-06-11
WO2009085992A3 (en) 2009-09-24

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