KR101580467B1 - 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법 - Google Patents

액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법 Download PDF

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Publication number
KR101580467B1
KR101580467B1 KR1020147027490A KR20147027490A KR101580467B1 KR 101580467 B1 KR101580467 B1 KR 101580467B1 KR 1020147027490 A KR1020147027490 A KR 1020147027490A KR 20147027490 A KR20147027490 A KR 20147027490A KR 101580467 B1 KR101580467 B1 KR 101580467B1
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South Korea
Prior art keywords
liquid
substrate
movable member
immersion
immersion liquid
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Expired - Fee Related
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KR1020147027490A
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Korean (ko)
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KR20140124867A (ko
Inventor
알렉스 카 팀 푼
레오나드 와이 풍 코
가우라브 케스와니
데렉 쿤
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가부시키가이샤 니콘
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    • H10P76/2041—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020147027490A 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법 Expired - Fee Related KR101580467B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US91805707P 2007-03-15 2007-03-15
US60/918,057 2007-03-15
US11/976,898 US8237911B2 (en) 2007-03-15 2007-10-29 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US11/976,898 2007-10-29
PCT/US2008/003224 WO2008115372A1 (en) 2007-03-15 2008-03-12 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine

Related Parent Applications (1)

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KR1020097021477A Division KR101515649B1 (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020157036015A Division KR20160003326A (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법

Publications (2)

Publication Number Publication Date
KR20140124867A KR20140124867A (ko) 2014-10-27
KR101580467B1 true KR101580467B1 (ko) 2015-12-28

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KR1020187007817A Ceased KR20180031083A (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법
KR1020147027490A Expired - Fee Related KR101580467B1 (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법
KR1020157036015A Ceased KR20160003326A (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법
KR1020097021477A Expired - Fee Related KR101515649B1 (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법

Family Applications Before (1)

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KR1020187007817A Ceased KR20180031083A (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020157036015A Ceased KR20160003326A (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법
KR1020097021477A Expired - Fee Related KR101515649B1 (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법

Country Status (5)

Country Link
US (4) US8237911B2 (enExample)
JP (4) JP5282255B2 (enExample)
KR (4) KR20180031083A (enExample)
TW (2) TWI545407B (enExample)
WO (1) WO2008115372A1 (enExample)

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