KR101577086B1 - 실리콘의 선택적인 도핑 방법 및 이 방법으로 처리된 실리콘 기판 - Google Patents

실리콘의 선택적인 도핑 방법 및 이 방법으로 처리된 실리콘 기판 Download PDF

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KR101577086B1
KR101577086B1 KR1020107025363A KR20107025363A KR101577086B1 KR 101577086 B1 KR101577086 B1 KR 101577086B1 KR 1020107025363 A KR1020107025363 A KR 1020107025363A KR 20107025363 A KR20107025363 A KR 20107025363A KR 101577086 B1 KR101577086 B1 KR 101577086B1
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silicon
silicon substrate
phosphosilicate glass
doping
masking
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KR20110081772A (ko
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디르크 하베르만
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게부르. 쉬미트 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
KR1020107025363A 2008-04-14 2009-04-09 실리콘의 선택적인 도핑 방법 및 이 방법으로 처리된 실리콘 기판 Active KR101577086B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008019402.6 2008-04-14
DE102008019402A DE102008019402A1 (de) 2008-04-14 2008-04-14 Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat

Publications (2)

Publication Number Publication Date
KR20110081772A KR20110081772A (ko) 2011-07-14
KR101577086B1 true KR101577086B1 (ko) 2015-12-11

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KR1020107025363A Active KR101577086B1 (ko) 2008-04-14 2009-04-09 실리콘의 선택적인 도핑 방법 및 이 방법으로 처리된 실리콘 기판

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Country Link
US (1) US8399343B2 (enExample)
EP (1) EP2277203B1 (enExample)
JP (1) JP5451742B2 (enExample)
KR (1) KR101577086B1 (enExample)
CN (1) CN102007599B (enExample)
AT (1) ATE548761T1 (enExample)
AU (1) AU2009237980B2 (enExample)
CA (1) CA2721298A1 (enExample)
DE (1) DE102008019402A1 (enExample)
ES (1) ES2383648T3 (enExample)
IL (1) IL208679A0 (enExample)
MX (1) MX2010011269A (enExample)
TW (1) TWI386982B (enExample)
WO (1) WO2009127369A1 (enExample)

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NL2000999C2 (nl) * 2007-11-13 2009-05-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor.
DE102009051847A1 (de) 2009-10-29 2011-05-19 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats
DE102010020175A1 (de) * 2010-05-11 2011-11-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung
KR20130062775A (ko) 2011-12-05 2013-06-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN103208560A (zh) * 2013-03-22 2013-07-17 江苏荣马新能源有限公司 一种晶体硅太阳能电池石蜡掩膜处理方法
CN105140334B (zh) * 2013-04-01 2017-04-05 南通大学 基于逆扩散的太阳能电池选择性掺杂方法
US10937665B2 (en) * 2016-09-30 2021-03-02 Intel Corporation Methods and apparatus for gettering impurities in semiconductors
JP7526019B2 (ja) 2020-03-27 2024-07-31 東京応化工業株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
CN111916347B (zh) * 2020-08-13 2023-03-21 中国电子科技集团公司第四十四研究所 一种用于soi片的磷扩散掺杂方法

Citations (2)

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JP2000183379A (ja) 1998-12-11 2000-06-30 Sanyo Electric Co Ltd 太陽電池の製造方法
JP2004281569A (ja) 2003-03-13 2004-10-07 Kyocera Corp 太陽電池素子の製造方法

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DE2754833A1 (de) * 1977-12-09 1979-06-13 Ibm Deutschland Phosphordiffusionsverfahren fuer halbleiteranwendungen
US4152824A (en) 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
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JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
US5013396A (en) * 1987-06-01 1991-05-07 The Regents Of The University Of Michigan Method of making an ultraminiature pressure sensor
DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur
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KR19990063990A (ko) * 1995-10-05 1999-07-26 로시 리차드 부분적으로 깊게 확산된 에미터가 있는 자가조정식(salde) 태양 전지 및 그 제조 방법
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US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
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JP5126795B2 (ja) * 2005-12-21 2013-01-23 サンパワー コーポレイション 裏面電極型太陽電池構造及びその製造プロセス
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Also Published As

Publication number Publication date
MX2010011269A (es) 2010-12-21
TW201003750A (en) 2010-01-16
EP2277203B1 (de) 2012-03-07
ATE548761T1 (de) 2012-03-15
DE102008019402A1 (de) 2009-10-15
JP2011519477A (ja) 2011-07-07
EP2277203A1 (de) 2011-01-26
AU2009237980B2 (en) 2013-06-27
KR20110081772A (ko) 2011-07-14
TWI386982B (zh) 2013-02-21
ES2383648T3 (es) 2012-06-25
WO2009127369A1 (de) 2009-10-22
CN102007599B (zh) 2012-09-26
US8399343B2 (en) 2013-03-19
CN102007599A (zh) 2011-04-06
US20110114168A1 (en) 2011-05-19
IL208679A0 (en) 2010-12-30
AU2009237980A1 (en) 2009-10-22
JP5451742B2 (ja) 2014-03-26
CA2721298A1 (en) 2009-10-22

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