JP5451742B2 - シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板 - Google Patents

シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板 Download PDF

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JP5451742B2
JP5451742B2 JP2011504360A JP2011504360A JP5451742B2 JP 5451742 B2 JP5451742 B2 JP 5451742B2 JP 2011504360 A JP2011504360 A JP 2011504360A JP 2011504360 A JP2011504360 A JP 2011504360A JP 5451742 B2 JP5451742 B2 JP 5451742B2
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silicon
silicon substrate
phosphosilicate glass
doping
masking
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JP2011519477A (ja
JP2011519477A5 (enExample
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ハベルマン，ディルク
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ゲブリューダー シュミット ゲゼルシャフト ミット ベシュレンクテル ハフツング
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
JP2011504360A 2008-04-14 2009-04-09 シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板 Active JP5451742B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008019402A DE102008019402A1 (de) 2008-04-14 2008-04-14 Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat
DE102008019402.6 2008-04-14
PCT/EP2009/002671 WO2009127369A1 (de) 2008-04-14 2009-04-09 Verfahren zur selektiven dotierung von silizium sowie damit behandeltes silizium-substrat

Publications (3)

Publication Number Publication Date
JP2011519477A JP2011519477A (ja) 2011-07-07
JP2011519477A5 JP2011519477A5 (enExample) 2012-06-07
JP5451742B2 true JP5451742B2 (ja) 2014-03-26

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JP2011504360A Active JP5451742B2 (ja) 2008-04-14 2009-04-09 シリコンの選択的ドーピング方法及びそれによって処理されたシリコン基板

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Country Link
US (1) US8399343B2 (enExample)
EP (1) EP2277203B1 (enExample)
JP (1) JP5451742B2 (enExample)
KR (1) KR101577086B1 (enExample)
CN (1) CN102007599B (enExample)
AT (1) ATE548761T1 (enExample)
AU (1) AU2009237980B2 (enExample)
CA (1) CA2721298A1 (enExample)
DE (1) DE102008019402A1 (enExample)
ES (1) ES2383648T3 (enExample)
IL (1) IL208679A0 (enExample)
MX (1) MX2010011269A (enExample)
TW (1) TWI386982B (enExample)
WO (1) WO2009127369A1 (enExample)

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DE102009051847A1 (de) 2009-10-29 2011-05-19 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung einer Substratoberlfäche eines Substrats
DE102010020175A1 (de) * 2010-05-11 2011-11-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung
KR20130062775A (ko) 2011-12-05 2013-06-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN103208560A (zh) * 2013-03-22 2013-07-17 江苏荣马新能源有限公司 一种晶体硅太阳能电池石蜡掩膜处理方法
CN103165758B (zh) * 2013-04-01 2015-08-26 南通大学 一种基于逆扩散的太阳能电池选择性掺杂方法
WO2018063350A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Methods and apparatus for gettering impurities in semiconductors
JP7526019B2 (ja) 2020-03-27 2024-07-31 東京応化工業株式会社 積層体、積層体の製造方法、及び半導体基板の製造方法
CN111916347B (zh) * 2020-08-13 2023-03-21 中国电子科技集团公司第四十四研究所 一种用于soi片的磷扩散掺杂方法

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JP2000183379A (ja) * 1998-12-11 2000-06-30 Sanyo Electric Co Ltd 太陽電池の製造方法
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NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
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Also Published As

Publication number Publication date
DE102008019402A1 (de) 2009-10-15
CN102007599A (zh) 2011-04-06
EP2277203B1 (de) 2012-03-07
ATE548761T1 (de) 2012-03-15
MX2010011269A (es) 2010-12-21
KR101577086B1 (ko) 2015-12-11
AU2009237980A1 (en) 2009-10-22
WO2009127369A1 (de) 2009-10-22
JP2011519477A (ja) 2011-07-07
TWI386982B (zh) 2013-02-21
US8399343B2 (en) 2013-03-19
AU2009237980B2 (en) 2013-06-27
CA2721298A1 (en) 2009-10-22
CN102007599B (zh) 2012-09-26
IL208679A0 (en) 2010-12-30
TW201003750A (en) 2010-01-16
EP2277203A1 (de) 2011-01-26
KR20110081772A (ko) 2011-07-14
ES2383648T3 (es) 2012-06-25
US20110114168A1 (en) 2011-05-19

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